KR20080079205A - 절연막의 제조 방법 및 반도체 장치의 제조방법 - Google Patents

절연막의 제조 방법 및 반도체 장치의 제조방법 Download PDF

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Publication number
KR20080079205A
KR20080079205A KR1020080016617A KR20080016617A KR20080079205A KR 20080079205 A KR20080079205 A KR 20080079205A KR 1020080016617 A KR1020080016617 A KR 1020080016617A KR 20080016617 A KR20080016617 A KR 20080016617A KR 20080079205 A KR20080079205 A KR 20080079205A
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KR
South Korea
Prior art keywords
film
thin film
insulating film
heat treatment
organic solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020080016617A
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English (en)
Korean (ko)
Inventor
테루유키 후지이
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20080079205A publication Critical patent/KR20080079205A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020080016617A 2007-02-26 2008-02-25 절연막의 제조 방법 및 반도체 장치의 제조방법 Withdrawn KR20080079205A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007045146 2007-02-26
JPJP-P-2007-00045146 2007-02-26

Publications (1)

Publication Number Publication Date
KR20080079205A true KR20080079205A (ko) 2008-08-29

Family

ID=39716390

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080016617A Withdrawn KR20080079205A (ko) 2007-02-26 2008-02-25 절연막의 제조 방법 및 반도체 장치의 제조방법

Country Status (4)

Country Link
US (1) US20080206997A1 (https=)
JP (1) JP5604034B2 (https=)
KR (1) KR20080079205A (https=)
CN (1) CN101256956A (https=)

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* Cited by examiner, † Cited by third party
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JP5178569B2 (ja) * 2009-02-13 2013-04-10 株式会社東芝 固体撮像装置
CN103931005A (zh) * 2011-09-14 2014-07-16 玛太克司马特股份有限公司 Led制造方法、led制造设备和led
CN102646595A (zh) * 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
JP7107106B2 (ja) * 2018-08-30 2022-07-27 富士電機株式会社 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法
JP7341309B2 (ja) * 2020-02-19 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理システム
KR102826508B1 (ko) * 2020-06-02 2025-06-27 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

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Also Published As

Publication number Publication date
JP2008244447A (ja) 2008-10-09
CN101256956A (zh) 2008-09-03
US20080206997A1 (en) 2008-08-28
JP5604034B2 (ja) 2014-10-08

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St.27 status event code: A-2-2-P10-P22-nap-X000