JP5603373B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP5603373B2 JP5603373B2 JP2012132314A JP2012132314A JP5603373B2 JP 5603373 B2 JP5603373 B2 JP 5603373B2 JP 2012132314 A JP2012132314 A JP 2012132314A JP 2012132314 A JP2012132314 A JP 2012132314A JP 5603373 B2 JP5603373 B2 JP 5603373B2
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 23
- 230000001681 protective effect Effects 0.000 description 16
- 230000005611 electricity Effects 0.000 description 14
- 230000003068 static effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 201000005569 Gout Diseases 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum alloy Chemical compound 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Description
50 テストパッド
60 OLBパッド
70 切断線
86、86a、86b、86c 接続部材
100 下部表示板
110 基板
127 走査開始信号線
126a、126b、126c、128a、128b、128c 引込線
126d、126e、128d、128e 接続線
186、186a、186b、186c、187、187a、187b、187c コンタクトホール
191 画素電極
200 上部表示板
230 カラーフィルタ
270 共通電極
300 液晶表示板組立体
400 ゲート駆動部
500 データ駆動部
600 信号制御部
800 階調電圧生成部
Claims (2)
- 基板と、
前記基板上に形成された複数のスイッチング素子を各々含む複数の画素と、
前記スイッチング素子に接続されて、行方向に延びている複数のゲート線と、
前記ゲート線と各々接続されている複数のステージを有するシフトレジスタ及び前記シフトレジスタの各ステージと接続されている配線部を含むゲート駆動部と、
を含み、
前記シフトレジスタのうち第1段目のステージは走査開始信号が印加されるトランジスタを含み、
前記配線部は前記走査開始信号を伝達する信号線を含み、
前記トランジスタは前記信号線と直接接続されている引込線を含み、
前記引込線は、2つ以上の枝部と前記枝部を互いに接続する接続部とを含むことを特徴とする液晶表示装置。 - 前記引込線及び前記信号線は、前記ゲート線と同じ材質で構成されることを特徴とする請求項1に記載の液晶表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0047074 | 2006-05-25 | ||
KR1020060047074A KR101404542B1 (ko) | 2006-05-25 | 2006-05-25 | 액정 표시 장치 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007137351A Division JP5340559B2 (ja) | 2006-05-25 | 2007-05-24 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012168565A JP2012168565A (ja) | 2012-09-06 |
JP5603373B2 true JP5603373B2 (ja) | 2014-10-08 |
Family
ID=38850485
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007137351A Active JP5340559B2 (ja) | 2006-05-25 | 2007-05-24 | 液晶表示装置 |
JP2012132314A Active JP5603373B2 (ja) | 2006-05-25 | 2012-06-11 | 液晶表示装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007137351A Active JP5340559B2 (ja) | 2006-05-25 | 2007-05-24 | 液晶表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7982813B2 (ja) |
JP (2) | JP5340559B2 (ja) |
KR (1) | KR101404542B1 (ja) |
CN (1) | CN101078848B (ja) |
TW (1) | TW200807120A (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101404542B1 (ko) * | 2006-05-25 | 2014-06-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101413578B1 (ko) * | 2007-12-04 | 2014-07-01 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
US7817388B2 (en) * | 2008-03-27 | 2010-10-19 | Himax Technologies Limited | Latch-up protection circuit for LCD driver IC |
JP5269991B2 (ja) * | 2009-06-09 | 2013-08-21 | シャープ株式会社 | 半導体装置 |
US8921857B2 (en) * | 2009-06-18 | 2014-12-30 | Sharp Kabushiki Kaisha | Semiconductor device |
US8803784B2 (en) | 2009-07-15 | 2014-08-12 | Sharp Kabushiki Kaisha | Scanning signal line drive circuit and display device having the same |
WO2011065045A1 (ja) | 2009-11-30 | 2011-06-03 | シャープ株式会社 | 走査信号線駆動回路およびこれを備えた表示装置 |
KR101320074B1 (ko) * | 2009-12-10 | 2013-10-18 | 엘지디스플레이 주식회사 | 정전용량 방식 터치 스크린 패널 |
RU2510534C1 (ru) | 2010-02-25 | 2014-03-27 | Шарп Кабусики Кайся | Устройство отображения |
US8525541B2 (en) | 2010-09-09 | 2013-09-03 | Himax Display, Inc. | Test method of liquid crystal display panel |
TWI404956B (zh) * | 2010-09-20 | 2013-08-11 | Himax Display Inc | 液晶顯示面板的測試方法 |
KR101773136B1 (ko) * | 2010-12-24 | 2017-08-31 | 삼성디스플레이 주식회사 | 게이트 구동회로 및 이를 구비한 표시 장치 |
CN102306479A (zh) * | 2011-07-04 | 2012-01-04 | 深圳市华星光电技术有限公司 | 一种适用于psva与阵列的测试电路 |
CN103236248B (zh) * | 2013-05-14 | 2015-07-08 | 合肥京东方光电科技有限公司 | 移位寄存器、栅极驱动单元与显示装置 |
JP6494341B2 (ja) * | 2015-03-13 | 2019-04-03 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102420115B1 (ko) * | 2015-05-22 | 2022-07-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102469305B1 (ko) * | 2015-08-17 | 2022-11-23 | 삼성디스플레이 주식회사 | 표시 구동 집적회로, 표시 장치 및 표시 장치의 구동 방법 |
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JP6753885B2 (ja) * | 2018-04-16 | 2020-09-09 | シャープ株式会社 | アクティブマトリクス基板、表示装置およびアクティブマトリクス基板の欠陥修正方法 |
KR102647372B1 (ko) * | 2018-07-13 | 2024-03-13 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN109961746B (zh) * | 2019-05-06 | 2020-09-08 | 深圳市华星光电半导体显示技术有限公司 | 用于显示屏的驱动电路 |
US10891902B2 (en) | 2019-05-06 | 2021-01-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Driving circuit of display device |
US11017714B2 (en) * | 2019-09-20 | 2021-05-25 | Samsung Display Co., Ltd. | Scan driver and display device including the same |
TWI748798B (zh) * | 2019-12-20 | 2021-12-01 | 瑞鼎科技股份有限公司 | 顯示裝置、顯示驅動電路及顯示驅動方法 |
CN112558366A (zh) * | 2020-12-08 | 2021-03-26 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶显示面板及其制造方法 |
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-
2006
- 2006-05-25 KR KR1020060047074A patent/KR101404542B1/ko active IP Right Grant
-
2007
- 2007-05-18 US US11/750,701 patent/US7982813B2/en active Active
- 2007-05-24 JP JP2007137351A patent/JP5340559B2/ja active Active
- 2007-05-25 CN CN2007101379782A patent/CN101078848B/zh active Active
- 2007-05-25 TW TW096118801A patent/TW200807120A/zh unknown
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2012
- 2012-06-11 JP JP2012132314A patent/JP5603373B2/ja active Active
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KR101404542B1 (ko) | 2014-06-09 |
US7982813B2 (en) | 2011-07-19 |
JP5340559B2 (ja) | 2013-11-13 |
CN101078848B (zh) | 2013-05-08 |
JP2007316642A (ja) | 2007-12-06 |
KR20070113605A (ko) | 2007-11-29 |
CN101078848A (zh) | 2007-11-28 |
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JP2012168565A (ja) | 2012-09-06 |
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