JP5340559B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP5340559B2 JP5340559B2 JP2007137351A JP2007137351A JP5340559B2 JP 5340559 B2 JP5340559 B2 JP 5340559B2 JP 2007137351 A JP2007137351 A JP 2007137351A JP 2007137351 A JP2007137351 A JP 2007137351A JP 5340559 B2 JP5340559 B2 JP 5340559B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- gate
- transistor
- liquid crystal
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000001681 protective effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 23
- 230000003068 static effect Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 201000005569 Gout Diseases 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum alloy Chemical compound 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Description
50 テストパッド
60 OLBパッド
70 切断線
86、86a、86b、86c 接続部材
100 下部表示板
110 基板
127 走査開始信号線
126a、126b、126c、128a、128b、128c 引込線
126d、126e、128d、128e 接続線
186、186a、186b、186c、187、187a、187b、187c コンタクトホール
191 画素電極
200 上部表示板
230 カラーフィルタ
270 共通電極
300 液晶表示板組立体
400 ゲート駆動部
500 データ駆動部
600 信号制御部
800 階調電圧生成部
Claims (8)
- 基板と、
前記基板上に形成された複数のスイッチング素子を各々含む複数の画素と、
前記スイッチング素子に接続されて行方向に延びている複数のゲート線と、
前記ゲート線と各々接続されている複数のシフトレジスタ及び各前記複数のシフトレジスタと接続されている配線部を含むゲート駆動部と、
を含み、
前記複数のシフトレジスタのうち第1段目のシフトレジスタは走査開始信号が印加されるトランジスタを含み、
前記配線部は前記走査開始信号を伝達する第1信号線と前記第1信号線と接続されて前記トランジスタに前記走査開始信号を伝達する引込線とを含み、
前記引込線と前記第1信号線は接続部材を介して接続されており、
前記接続部材は前記引込線及び前記第1信号線と異なる層に形成されていることを特徴とする液晶表示装置。 - 前記トランジスタは前記引込線と接続されて前記走査開始信号を印加される制御端子を含み、
前記制御端子、前記引込線及び前記第1信号線は前記ゲート線と同じ材質で構成されることを特徴とする請求項1に記載の液晶表示装置。 - 前記接続部材は、ITO(インジウム錫酸化物)またはIZO(インジウム亜鉛酸化物)を含むことを特徴とする請求項1に記載の液晶表示装置。
- 前記接続部材と前記第1信号線との間及び前記接続部材と前記引込線及び前記トランジスタとの間に形成される保護膜をさらに含むことを特徴とする請求項3に記載の液晶表示装置。
- 前記保護膜には、前記第1信号線と前記接続部材とを接続する第1コンタクトホール及び
前記引込線と前記接続部材とを接続する第2コンタクトホールが形成されていることを特徴とする請求項4に記載の液晶表示装置。 - 前記複数のシフトレジスタ及び前記配線部はそれぞれ前記基板上に集積されていることを特徴とする請求項1に記載の液晶表示装置。
- 前記配線部は前記複数のシフトレジスタに制御信号を伝達する第2信号線を更に含むことを特徴とする請求項1に記載の液晶表示装置。
- 前記引込線は、前記接続部材を介して前記第1信号線と接続する少なくとも2つ以上の枝部を含み、前記少なくとも2つ以上の枝部は、1つ以上の接続部を介して互いに接続されていることを特徴とする請求項1に記載の液晶表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060047074A KR101404542B1 (ko) | 2006-05-25 | 2006-05-25 | 액정 표시 장치 |
KR10-2006-0047074 | 2006-05-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012132314A Division JP5603373B2 (ja) | 2006-05-25 | 2012-06-11 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007316642A JP2007316642A (ja) | 2007-12-06 |
JP5340559B2 true JP5340559B2 (ja) | 2013-11-13 |
Family
ID=38850485
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007137351A Active JP5340559B2 (ja) | 2006-05-25 | 2007-05-24 | 液晶表示装置 |
JP2012132314A Active JP5603373B2 (ja) | 2006-05-25 | 2012-06-11 | 液晶表示装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012132314A Active JP5603373B2 (ja) | 2006-05-25 | 2012-06-11 | 液晶表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7982813B2 (ja) |
JP (2) | JP5340559B2 (ja) |
KR (1) | KR101404542B1 (ja) |
CN (1) | CN101078848B (ja) |
TW (1) | TW200807120A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012168565A (ja) * | 2006-05-25 | 2012-09-06 | Samsung Electronics Co Ltd | 液晶表示装置 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101413578B1 (ko) * | 2007-12-04 | 2014-07-01 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
US7817388B2 (en) * | 2008-03-27 | 2010-10-19 | Himax Technologies Limited | Latch-up protection circuit for LCD driver IC |
WO2010143557A1 (ja) * | 2009-06-09 | 2010-12-16 | シャープ株式会社 | 半導体装置 |
WO2010147032A1 (ja) * | 2009-06-18 | 2010-12-23 | シャープ株式会社 | 半導体装置 |
RU2491651C1 (ru) | 2009-07-15 | 2013-08-27 | Шарп Кабусики Кайся | Схема управления линиями сигнала развертки и устройство отображения, имеющее указанную схему |
WO2011065045A1 (ja) | 2009-11-30 | 2011-06-03 | シャープ株式会社 | 走査信号線駆動回路およびこれを備えた表示装置 |
KR101320074B1 (ko) * | 2009-12-10 | 2013-10-18 | 엘지디스플레이 주식회사 | 정전용량 방식 터치 스크린 패널 |
RU2510534C1 (ru) | 2010-02-25 | 2014-03-27 | Шарп Кабусики Кайся | Устройство отображения |
US8525541B2 (en) | 2010-09-09 | 2013-09-03 | Himax Display, Inc. | Test method of liquid crystal display panel |
TWI404956B (zh) * | 2010-09-20 | 2013-08-11 | Himax Display Inc | 液晶顯示面板的測試方法 |
KR101773136B1 (ko) * | 2010-12-24 | 2017-08-31 | 삼성디스플레이 주식회사 | 게이트 구동회로 및 이를 구비한 표시 장치 |
CN102306479A (zh) * | 2011-07-04 | 2012-01-04 | 深圳市华星光电技术有限公司 | 一种适用于psva与阵列的测试电路 |
CN103236248B (zh) * | 2013-05-14 | 2015-07-08 | 合肥京东方光电科技有限公司 | 移位寄存器、栅极驱动单元与显示装置 |
JP6494341B2 (ja) * | 2015-03-13 | 2019-04-03 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102420115B1 (ko) * | 2015-05-22 | 2022-07-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102469305B1 (ko) * | 2015-08-17 | 2022-11-23 | 삼성디스플레이 주식회사 | 표시 구동 집적회로, 표시 장치 및 표시 장치의 구동 방법 |
US10622082B2 (en) * | 2017-12-15 | 2020-04-14 | Boe Technology Group Co., Ltd. | Display apparatus and gate-driver-on-array circuit |
JP6753885B2 (ja) * | 2018-04-16 | 2020-09-09 | シャープ株式会社 | アクティブマトリクス基板、表示装置およびアクティブマトリクス基板の欠陥修正方法 |
KR102578051B1 (ko) * | 2018-06-01 | 2023-09-14 | 삼성전자주식회사 | 필름형 패키지 및 이를 구비한 디스플레이 장치 |
KR102647372B1 (ko) * | 2018-07-13 | 2024-03-13 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US10891902B2 (en) | 2019-05-06 | 2021-01-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Driving circuit of display device |
CN109961746B (zh) * | 2019-05-06 | 2020-09-08 | 深圳市华星光电半导体显示技术有限公司 | 用于显示屏的驱动电路 |
KR102676649B1 (ko) * | 2019-09-20 | 2024-06-21 | 삼성디스플레이 주식회사 | 주사 구동부 및 이를 포함하는 표시 장치 |
TWI748798B (zh) * | 2019-12-20 | 2021-12-01 | 瑞鼎科技股份有限公司 | 顯示裝置、顯示驅動電路及顯示驅動方法 |
CN112558366A (zh) * | 2020-12-08 | 2021-03-26 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶显示面板及其制造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US594502A (en) * | 1897-11-30 | trice | ||
JP2803792B2 (ja) * | 1992-08-28 | 1998-09-24 | シャープ株式会社 | アクティブマトリクス型液晶表示装置 |
JPH08114815A (ja) | 1994-10-18 | 1996-05-07 | Sony Corp | Tftアクティブマトリクス液晶基板の製造方法 |
DE69532724T2 (de) | 1995-08-07 | 2005-03-17 | Hitachi, Ltd. | Gegen statische elektrizität unempfindliche flüssigkristall-anzeigevorrichtung mit aktiver matrix |
US5930607A (en) * | 1995-10-03 | 1999-07-27 | Seiko Epson Corporation | Method to prevent static destruction of an active element comprised in a liquid crystal display device |
US6466281B1 (en) * | 1999-08-23 | 2002-10-15 | Industrial Technology Research Institute | Integrated black matrix/color filter structure for TFT-LCD |
KR100628254B1 (ko) | 2000-04-12 | 2006-09-27 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 |
TW466773B (en) * | 2000-12-15 | 2001-12-01 | Acer Display Tech Inc | Manufacturing method of thin film transistor liquid crystal display |
JP4109864B2 (ja) * | 2001-12-26 | 2008-07-02 | 東芝松下ディスプレイテクノロジー株式会社 | マトリクスアレイ基板及びその製造方法 |
JP2003195338A (ja) | 2001-12-27 | 2003-07-09 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
WO2003107314A2 (en) | 2002-06-01 | 2003-12-24 | Samsung Electronics Co., Ltd. | Method of driving a shift register, a shift register, a liquid crystal display device having the shift register |
KR100843478B1 (ko) | 2002-06-15 | 2008-07-03 | 엘지디스플레이 주식회사 | 라인 온 글래스형 액정패널 및 그 제조방법 |
KR100843955B1 (ko) | 2002-06-15 | 2008-07-03 | 엘지디스플레이 주식회사 | 라인 온 글래스형 액정패널 및 그 제조방법 |
JP2004118107A (ja) * | 2002-09-27 | 2004-04-15 | Kyocera Corp | 液晶表示装置 |
KR100487808B1 (ko) * | 2002-12-10 | 2005-05-06 | 엘지.필립스 엘시디 주식회사 | 그라인딩 공정 전의 액정표시패널 및 액정표시패널의 제조 방법 |
KR100717184B1 (ko) * | 2003-08-01 | 2007-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 액정 디스플레이 패널 |
US7209209B2 (en) * | 2003-08-29 | 2007-04-24 | Samsung Electronics Co., Ltd. | Display device and panel therefor |
KR101006438B1 (ko) * | 2003-11-12 | 2011-01-06 | 삼성전자주식회사 | 액정 표시 장치 |
KR100983595B1 (ko) | 2003-12-29 | 2010-09-27 | 엘지디스플레이 주식회사 | 액정 표시 장치의 정전기 방지 회로 |
KR100634833B1 (ko) | 2004-03-30 | 2006-10-17 | 엘지.필립스 엘시디 주식회사 | 액정 표시 패널 |
KR101010447B1 (ko) | 2004-03-31 | 2011-01-21 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
KR101009675B1 (ko) | 2004-06-25 | 2011-01-19 | 엘지디스플레이 주식회사 | 라인 온 글래스형 액정표시소자 |
JP4207858B2 (ja) | 2004-07-05 | 2009-01-14 | セイコーエプソン株式会社 | 半導体装置、表示装置及び電子機器 |
KR101014172B1 (ko) * | 2004-09-13 | 2011-02-14 | 삼성전자주식회사 | 구동유닛 및 이를 갖는 표시장치 |
KR101056369B1 (ko) * | 2004-09-18 | 2011-08-11 | 삼성전자주식회사 | 구동유닛 및 이를 갖는 표시장치 |
KR20070002933A (ko) * | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
KR101404542B1 (ko) * | 2006-05-25 | 2014-06-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
-
2006
- 2006-05-25 KR KR1020060047074A patent/KR101404542B1/ko active IP Right Grant
-
2007
- 2007-05-18 US US11/750,701 patent/US7982813B2/en active Active
- 2007-05-24 JP JP2007137351A patent/JP5340559B2/ja active Active
- 2007-05-25 TW TW096118801A patent/TW200807120A/zh unknown
- 2007-05-25 CN CN2007101379782A patent/CN101078848B/zh active Active
-
2012
- 2012-06-11 JP JP2012132314A patent/JP5603373B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012168565A (ja) * | 2006-05-25 | 2012-09-06 | Samsung Electronics Co Ltd | 液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101078848B (zh) | 2013-05-08 |
JP2007316642A (ja) | 2007-12-06 |
KR101404542B1 (ko) | 2014-06-09 |
JP5603373B2 (ja) | 2014-10-08 |
US7982813B2 (en) | 2011-07-19 |
US20080067511A1 (en) | 2008-03-20 |
TW200807120A (en) | 2008-02-01 |
KR20070113605A (ko) | 2007-11-29 |
CN101078848A (zh) | 2007-11-28 |
JP2012168565A (ja) | 2012-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5340559B2 (ja) | 液晶表示装置 | |
CN108182921B (zh) | 一种阵列基板、显示面板与显示装置 | |
KR101330214B1 (ko) | 터치 스크린 표시 장치 및 그 구동 방법 | |
JP4691387B2 (ja) | 表示装置用駆動装置及び表示板 | |
JP5078483B2 (ja) | 液晶表示装置 | |
KR101358334B1 (ko) | 액정 표시 장치 및 그 구동 방법 | |
US9257455B2 (en) | Gate drive circuit having reduced size, display substrate having the same, and method of manufacturing the display substrate | |
US20050275614A1 (en) | Gate driving portion and display device having the same | |
US7894006B2 (en) | Liquid crystal display with m x 1 inversion drive | |
JP2007193340A (ja) | 液晶表示装置 | |
JP2007079568A (ja) | 液晶表示装置 | |
JPWO2011067963A1 (ja) | 液晶表示装置 | |
KR20120025874A (ko) | 게이트 구동 장치 및 이를 포함하는 표시 장치 | |
CN110782849B (zh) | 栅极驱动电路及包括栅极驱动电路的显示装置 | |
JP2007164175A (ja) | 表示装置 | |
KR20150081872A (ko) | 표시 장치 | |
KR102579866B1 (ko) | 게이트 구동회로를 포함하는 표시 기판 | |
KR102195175B1 (ko) | 표시장치 | |
KR20150134465A (ko) | 표시 장치 | |
KR101090251B1 (ko) | 박막 트랜지스터 표시판 및 이를 포함하는 표시 장치 | |
KR20120120926A (ko) | 액정 표시 장치 | |
KR20070117046A (ko) | 액정 표시 장치 | |
KR20070028142A (ko) | 액정 표시 장치 | |
KR20070059252A (ko) | 표시 기판과, 이를 구비한 액정표시패널 및 액정표시 장치 | |
KR20050081003A (ko) | 영상표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110331 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120611 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130617 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130807 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5340559 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |