JP5573176B2 - リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法 - Google Patents

リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法 Download PDF

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Publication number
JP5573176B2
JP5573176B2 JP2010006035A JP2010006035A JP5573176B2 JP 5573176 B2 JP5573176 B2 JP 5573176B2 JP 2010006035 A JP2010006035 A JP 2010006035A JP 2010006035 A JP2010006035 A JP 2010006035A JP 5573176 B2 JP5573176 B2 JP 5573176B2
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Prior art keywords
recess
die pad
lead frame
lead
semiconductor element
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JP2010006035A
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English (en)
Japanese (ja)
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JP2011146524A5 (enExample
JP2011146524A (ja
Inventor
田 和 範 小
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Priority to JP2010006035A priority Critical patent/JP5573176B2/ja
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Publication of JP2011146524A5 publication Critical patent/JP2011146524A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Led Device Packages (AREA)
JP2010006035A 2010-01-14 2010-01-14 リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法 Active JP5573176B2 (ja)

Priority Applications (1)

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JP2010006035A JP5573176B2 (ja) 2010-01-14 2010-01-14 リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法

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JP2010006035A JP5573176B2 (ja) 2010-01-14 2010-01-14 リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法

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JP2011146524A5 JP2011146524A5 (enExample) 2013-10-24
JP5573176B2 true JP5573176B2 (ja) 2014-08-20

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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101888603B1 (ko) * 2011-07-29 2018-08-14 엘지이노텍 주식회사 발광 소자 패키지 및 표시장치
JP2013058739A (ja) * 2011-08-17 2013-03-28 Dainippon Printing Co Ltd 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、光半導体装置、および、光半導体装置用リードフレームの製造方法
JP5935577B2 (ja) * 2011-08-23 2016-06-15 大日本印刷株式会社 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、および光半導体装置
JP6205686B2 (ja) * 2011-08-23 2017-10-04 大日本印刷株式会社 光半導体装置
JP2013125776A (ja) * 2011-12-13 2013-06-24 Dainippon Printing Co Ltd リードフレーム、樹脂付リードフレームおよびその製造方法、ならびに半導体装置の製造方法
JP6078948B2 (ja) 2012-01-20 2017-02-15 日亜化学工業株式会社 発光装置用パッケージ成形体及びそれを用いた発光装置
JP2013179271A (ja) * 2012-01-31 2013-09-09 Rohm Co Ltd 発光装置および発光装置の製造方法
KR101888444B1 (ko) * 2012-02-28 2018-08-16 엘지디스플레이 주식회사 발광 다이오드 패키지 및 그 제조 방법
JP5888098B2 (ja) * 2012-04-27 2016-03-16 大日本印刷株式会社 Ｌｅｄ素子搭載用リードフレーム、樹脂付リードフレーム、多面付ｌｅｄパッケージ、ｌｅｄパッケージの製造方法および半導体素子搭載用リードフレーム
JP6071034B2 (ja) * 2012-04-27 2017-02-01 大日本印刷株式会社 Ｌｅｄ素子搭載用リードフレーム、樹脂付リードフレーム、多面付ｌｅｄパッケージ、ｌｅｄパッケージの製造方法および半導体素子搭載用リードフレーム
JP2013008979A (ja) * 2012-08-02 2013-01-10 Toshiba Corp 半導体パッケージ
US9548261B2 (en) * 2013-03-05 2017-01-17 Nichia Corporation Lead frame and semiconductor device
JP6291713B2 (ja) 2013-03-14 2018-03-14 日亜化学工業株式会社 発光素子実装用基体及びそれを備える発光装置、並びにリードフレーム
KR102066093B1 (ko) * 2013-09-11 2020-01-14 엘지디스플레이 주식회사 발광 다이오드 패키지와 이를 이용한 백라이트 유닛 및 액정 표시 장치
JP6460390B2 (ja) * 2015-02-04 2019-01-30 大口マテリアル株式会社 リードフレーム、光半導体装置用樹脂付きリードフレーム及びこれらの製造方法、並びに光半導体装置
JP6056914B2 (ja) * 2015-07-07 2017-01-11 大日本印刷株式会社 樹脂付リードフレーム、半導体装置および照明装置
JP2017076809A (ja) * 2016-12-05 2017-04-20 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置
JP6350683B2 (ja) * 2017-01-06 2018-07-04 大日本印刷株式会社 Ｌｅｄ素子搭載用リードフレーム、樹脂付リードフレーム、多面付ｌｅｄパッケージ、ｌｅｄパッケージの製造方法および半導体素子搭載用リードフレーム
KR101810494B1 (ko) * 2017-06-07 2017-12-20 주식회사 정진넥스텍 발광다이오드 패키지용 리드 프레임 조립체, 그 제조 방법 및 발광다이오드 패키지
US10707384B2 (en) * 2017-07-06 2020-07-07 Nichia Corporation Light-emitting device
JP7064325B2 (ja) * 2017-12-18 2022-05-10 スタンレー電気株式会社 半導体発光装置、および、それを用いた半導体発光装置の製造方法
JP2019161238A (ja) * 2019-06-17 2019-09-19 マクセルホールディングス株式会社 半導体装置用基板およびその製造方法、半導体装置
JP6733786B2 (ja) * 2019-07-16 2020-08-05 日亜化学工業株式会社 パッケージ、発光装置及びそれらの製造方法
JP7011685B2 (ja) * 2020-07-10 2022-01-27 マクセル株式会社 半導体装置
JP7389363B2 (ja) * 2021-05-26 2023-11-30 日亜化学工業株式会社 発光装置
CN113359248B (zh) * 2021-06-02 2022-11-15 青岛海信宽带多媒体技术有限公司 一种光模块

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JP2001185651A (ja) * 1999-12-27 2001-07-06 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP5183583B2 (ja) * 2000-12-28 2013-04-17 ルネサスエレクトロニクス株式会社 半導体装置
JP2004214265A (ja) * 2002-12-27 2004-07-29 Kyushu Hitachi Maxell Ltd 半導体装置および半導体装置の製造方法
JP4359195B2 (ja) * 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
JP4865525B2 (ja) * 2006-08-03 2012-02-01 イッツウェル カンパニー リミテッド Ｓｍｌ型発光ダイオードランプ用素子およびその製造方法
JP5004601B2 (ja) * 2007-01-22 2012-08-22 パナソニック株式会社 パッケージ部品の製造方法および半導体装置の製造方法

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