JP5551068B2 - 寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット - Google Patents

寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット Download PDF

Info

Publication number
JP5551068B2
JP5551068B2 JP2010513240A JP2010513240A JP5551068B2 JP 5551068 B2 JP5551068 B2 JP 5551068B2 JP 2010513240 A JP2010513240 A JP 2010513240A JP 2010513240 A JP2010513240 A JP 2010513240A JP 5551068 B2 JP5551068 B2 JP 5551068B2
Authority
JP
Japan
Prior art keywords
sputtering
plate
backing plate
target
annular groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010513240A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011517329A5 (enExample
JP2011517329A (ja
Inventor
アドルフ ミラー アレン，
キ ウワン ユーン，
テッド グオ，
ホン エス． ヤン，
サン−ホ ユ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011517329A publication Critical patent/JP2011517329A/ja
Publication of JP2011517329A5 publication Critical patent/JP2011517329A5/ja
Application granted granted Critical
Publication of JP5551068B2 publication Critical patent/JP5551068B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L43/00—Arrangements for monitoring or testing data switching networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L65/00—Network arrangements, protocols or services for supporting real-time applications in data packet communication
    • H04L65/60—Network streaming of media packets
    • H04L65/75—Media network packet handling
    • H04L65/765—Media network packet handling intermediate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L65/00—Network arrangements, protocols or services for supporting real-time applications in data packet communication
    • H04L65/80—Responding to QoS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L43/00—Arrangements for monitoring or testing data switching networks
    • H04L43/06—Generation of reports
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L43/00—Arrangements for monitoring or testing data switching networks
    • H04L43/08—Monitoring or testing based on specific metrics, e.g. QoS, energy consumption or environmental parameters
    • H04L43/0823—Errors, e.g. transmission errors
    • H04L43/0829—Packet loss
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L43/00—Arrangements for monitoring or testing data switching networks
    • H04L43/08—Monitoring or testing based on specific metrics, e.g. QoS, energy consumption or environmental parameters
    • H04L43/0852—Delays
    • H04L43/087—Jitter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L43/00—Arrangements for monitoring or testing data switching networks
    • H04L43/10—Active monitoring, e.g. heartbeat, ping or trace-route
    • H04L43/106—Active monitoring, e.g. heartbeat, ping or trace-route using time related information in packets, e.g. by adding timestamps
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L65/00—Network arrangements, protocols or services for supporting real-time applications in data packet communication
    • H04L65/40—Support for services or applications
    • H04L65/401—Support for services or applications wherein the services involve a main real-time session and one or more additional parallel real-time or time sensitive sessions, e.g. white board sharing or spawning of a subconference
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L69/00—Network arrangements, protocols or services independent of the application payload and not provided for in the other groups of this subclass
    • H04L69/28—Timers or timing mechanisms used in protocols

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
JP2010513240A 2007-06-18 2008-06-18 寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット Active JP5551068B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/764,772 US8968536B2 (en) 2007-06-18 2007-06-18 Sputtering target having increased life and sputtering uniformity
US11/764,722 2007-06-18
PCT/US2008/007611 WO2008156794A2 (en) 2007-06-18 2008-06-18 Sputtering target having increased life and sputtering uniformity

Publications (3)

Publication Number Publication Date
JP2011517329A JP2011517329A (ja) 2011-06-02
JP2011517329A5 JP2011517329A5 (enExample) 2011-08-04
JP5551068B2 true JP5551068B2 (ja) 2014-07-16

Family

ID=39930478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010513240A Active JP5551068B2 (ja) 2007-06-18 2008-06-18 寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット

Country Status (7)

Country Link
US (1) US8968536B2 (enExample)
EP (1) EP2176441A2 (enExample)
JP (1) JP5551068B2 (enExample)
KR (3) KR20100018623A (enExample)
CN (2) CN101680082B (enExample)
TW (1) TWI512125B (enExample)
WO (1) WO2008156794A2 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
JP4723668B2 (ja) * 2009-12-25 2011-07-13 Ｊｘ日鉱日石金属株式会社 ターゲットバッキングプレート組立体
US20120305393A1 (en) * 2010-02-17 2012-12-06 Tosoh Smd, Inc. Sputter target
US8992747B2 (en) * 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
SG185023A1 (en) * 2010-07-23 2012-11-29 Jx Nippon Mining & Metals Corp Magnetic material sputtering target provided with groove in rear face of target
CN102534523B (zh) * 2010-12-15 2013-12-11 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源和磁控溅射设备、以及磁控溅射方法
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
WO2013028313A1 (en) * 2011-08-19 2013-02-28 Mattson Technology, Inc. High efficiency plasma source
CN102430865B (zh) * 2011-10-20 2015-07-08 宁波江丰电子材料股份有限公司 靶材与背板的焊接方法及形成的靶材组件
KR101305626B1 (ko) * 2011-10-24 2013-09-17 하이디스 테크놀로지 주식회사 스퍼터링 장치
CN102554455B (zh) * 2011-12-31 2015-07-08 宁波江丰电子材料股份有限公司 钨钛合金靶材与铜合金背板扩散焊接方法
JP6239346B2 (ja) 2013-02-28 2017-11-29 株式会社アヤボ パルススパッタ装置
US9779920B2 (en) 2013-08-14 2017-10-03 Applied Materials, Inc. Sputtering target with backside cooling grooves
CN103700599B (zh) * 2013-12-05 2016-05-18 合肥京东方光电科技有限公司 校正治具
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
WO2015138091A1 (en) * 2014-03-14 2015-09-17 Applied Materials, Inc. Smart chamber and smart chamber components
AT14346U1 (de) * 2014-07-08 2015-09-15 Plansee Se Target und Verfahren zur Herstellung eines Targets
US20160053365A1 (en) * 2014-08-20 2016-02-25 Honeywell International Inc. Encapsulated composite backing plate
CN104646817A (zh) * 2014-12-22 2015-05-27 有研亿金新材料有限公司 一种作为溅射靶材的铝靶材与铝合金背板的连接方法
WO2017016575A1 (en) * 2015-07-24 2017-02-02 Applied Materials, Inc. Cooling and utilization optimization of heat sensitive bonded metal targets
CN105441883B (zh) * 2015-11-23 2017-11-07 铱格斯曼航空科技集团有限公司 一种ito靶材布局方法
US9856557B1 (en) 2016-01-22 2018-01-02 Seagate Technology Llc Fabrication of a multi-layered magnetic element
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
USD836572S1 (en) 2016-09-30 2018-12-25 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
CN106683988B (zh) * 2016-12-28 2019-05-24 惠科股份有限公司 一种靶材装置
CN108690961A (zh) * 2017-04-06 2018-10-23 北京北方华创微电子装备有限公司 磁控溅射组件、磁控溅射腔室及磁控溅射设备
CN109385608A (zh) * 2017-08-08 2019-02-26 宁波江丰电子材料股份有限公司 靶材组件及其制造方法
USD851613S1 (en) 2017-10-05 2019-06-18 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD868124S1 (en) * 2017-12-11 2019-11-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
USD877101S1 (en) 2018-03-09 2020-03-03 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US11629400B2 (en) 2018-05-21 2023-04-18 Ulvac, Inc. Sputtering target and method of producing the same
WO2020033671A1 (en) * 2018-08-10 2020-02-13 Materion Corporation Sputtering target assembly
TWI672387B (zh) * 2018-08-28 2019-09-21 住華科技股份有限公司 濺射靶材及其使用方法
USD933725S1 (en) * 2019-02-08 2021-10-19 Applied Materials, Inc. Deposition ring for a substrate processing chamber
KR20220034215A (ko) 2019-07-16 2022-03-17 어플라이드 머티어리얼스, 인코포레이티드 향상된 플라즈마 제어를 위한 em 소스
USD908645S1 (en) 2019-08-26 2021-01-26 Applied Materials, Inc. Sputtering target for a physical vapor deposition chamber
CN111141811B (zh) * 2019-12-26 2020-10-16 中国科学院地质与地球物理研究所 一种离子探针的靶托组件及其样品靶制备的方法
USD934315S1 (en) * 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
US11424111B2 (en) 2020-06-25 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited Sputtering target assembly to prevent overetch of backing plate and methods of using the same
US11581166B2 (en) 2020-07-31 2023-02-14 Applied Materials, Inc. Low profile deposition ring for enhanced life
USD933726S1 (en) * 2020-07-31 2021-10-19 Applied Materials, Inc. Deposition ring for a semiconductor processing chamber
TWI798760B (zh) * 2020-08-26 2023-04-11 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法、基板保持具及程式
USD940765S1 (en) 2020-12-02 2022-01-11 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
KR102559547B1 (ko) * 2020-12-08 2023-07-26 (주)지오엘리먼트 보강부를 구비한 스퍼터링 타겟 및 이의 제조방법
KR102559553B1 (ko) * 2020-12-08 2023-07-26 (주)지오엘리먼트 상면 보강부를 구비한 스퍼터링 타겟 및 이의 제조방법
KR102446965B1 (ko) * 2021-01-28 2022-09-26 (주)지오엘리먼트 강성이 강화된 오링용 그루브를 갖는 스퍼터링 타겟 및 이의 제조방법
USD1072774S1 (en) 2021-02-06 2025-04-29 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
JP2022143343A (ja) * 2021-03-17 2022-10-03 キオクシア株式会社 成膜装置、スパッタリングターゲット、および半導体装置の製造方法
USD1007449S1 (en) 2021-05-07 2023-12-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
TWI811691B (zh) * 2021-05-28 2023-08-11 天虹科技股份有限公司 磁場分布調整裝置、可調整磁場分布的沉積設備及其沉積方法
CN115404451A (zh) * 2021-05-28 2022-11-29 鑫天虹(厦门)科技有限公司 磁场调整装置、可产生均匀磁场的薄膜沉积设备及其沉积方法
CN115404450B (zh) * 2021-05-28 2023-12-05 鑫天虹(厦门)科技有限公司 磁场分布调整装置、沉积设备及其沉积方法
CN115404449B (zh) * 2021-05-28 2023-12-01 鑫天虹(厦门)科技有限公司 可调整磁场分布的薄膜沉积设备及其磁场调整装置
USD1053230S1 (en) 2022-05-19 2024-12-03 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber

Family Cites Families (238)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716462A (en) 1970-10-05 1973-02-13 D Jensen Copper plating on zinc and its alloys
US3725220A (en) 1972-04-27 1973-04-03 Lea Ronal Inc Electrodeposition of copper from acidic baths
GB2049737A (en) 1979-06-01 1980-12-31 Gen Eng Radcliffe Sputtering Device Target
ATE10512T1 (de) 1980-08-08 1984-12-15 Battelle Development Corporation Vorrichtung zur beschichtung von substraten mittels hochleistungskathodenzerstaeubung sowie zerstaeuberkathode fuer diese vorrichtung.
FR2510145B1 (fr) 1981-07-24 1986-02-07 Rhone Poulenc Spec Chim Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes
JPS58153776A (ja) 1982-03-05 1983-09-12 Citizen Watch Co Ltd 装飾部品の製造方法およびそれに用いるイオンプレ−テイング装置
JPS58147558U (ja) 1982-03-31 1983-10-04 板羽　哲也 ゴルフボ−ル携帯器
US4505947A (en) 1982-07-14 1985-03-19 The Standard Oil Company (Ohio) Method for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma
JPS59232271A (ja) 1983-06-15 1984-12-27 Nec Corp マグネトロンスパツタリング用タ−ゲツト
US4545882A (en) 1983-09-02 1985-10-08 Shatterproof Glass Corporation Method and apparatus for detecting sputtering target depletion
US4606802A (en) 1983-12-21 1986-08-19 Hitachi, Ltd. Planar magnetron sputtering with modified field configuration
JPS60187660A (ja) 1984-02-24 1985-09-25 Honda Motor Co Ltd 部分硬化鋳鉄部材
US4631106A (en) * 1984-09-19 1986-12-23 Hitachi, Ltd. Plasma processor
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
CH669609A5 (enExample) 1986-12-23 1989-03-31 Balzers Hochvakuum
JPS63235471A (ja) 1987-03-24 1988-09-30 Nec Corp スパツタ装置用タ−ゲツト
JPS63290270A (ja) 1987-05-20 1988-11-28 Toshiba Corp スパッタリング装置におけるタ−ゲットの厚さ測定方法
US4924436A (en) 1987-06-22 1990-05-08 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite
DE3912381A1 (de) * 1988-04-15 1989-10-26 Sharp Kk Auffaengereinheit
US4905886A (en) 1988-07-20 1990-03-06 Grumman Aerospace Corporation Method for diffusion bonding of metals and alloys using thermal spray deposition
US5409590A (en) 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
US5041194A (en) 1989-05-18 1991-08-20 Mitsubishi Petrochemical Co., Ltd. Aluminum electroplating method
US4995958A (en) 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
CA2098725A1 (en) * 1991-01-28 1992-07-29 Daniel R. Marx Target for cathode sputtering
JPH0539566A (ja) 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
US5458759A (en) 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
US5314597A (en) 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5693203A (en) 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JPH06140330A (ja) 1992-10-05 1994-05-20 Nippon Steel Corp スパッタリング装置
US5942089A (en) 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
JPH08176808A (ja) 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
CH690805A5 (de) 1993-05-04 2001-01-15 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und Vakuumbehandlungsanlage hiermit.
US5342496A (en) 1993-05-18 1994-08-30 Tosoh Smd, Inc. Method of welding sputtering target/backing plate assemblies
DE69403386T2 (de) 1993-05-19 1997-09-18 Applied Materials Inc Vorrichtung und Verfahren zur Erhöhung der Zerstäubungsrate in einem Zerstäubungsgerät
US5407551A (en) 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
US5415754A (en) * 1993-10-22 1995-05-16 Sierra Applied Sciences, Inc. Method and apparatus for sputtering magnetic target materials
US5433835B1 (en) 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
JPH07201700A (ja) 1993-12-28 1995-08-04 Mitsubishi Electric Corp 半導体装置の製造方法
JP2953940B2 (ja) 1994-02-14 1999-09-27 日本電気株式会社 スパッタリング装置およびターゲットのスパッタ面を測定する方法
US5798029A (en) 1994-04-22 1998-08-25 Applied Materials, Inc. Target for sputtering equipment
EP0704878A1 (en) 1994-09-27 1996-04-03 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
JP2689931B2 (ja) 1994-12-29 1997-12-10 日本電気株式会社 スパッタ方法
US6073830A (en) 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US5695825A (en) 1995-05-31 1997-12-09 Amorphous Technologies International Titanium-containing ferrous hard-facing material source and method for hard facing a substrate
GB2318590B (en) 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
US5772858A (en) 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
US5799860A (en) 1995-08-07 1998-09-01 Applied Materials, Inc. Preparation and bonding of workpieces to form sputtering targets and other assemblies
JP2723857B2 (ja) 1995-10-16 1998-03-09 九州日本電気株式会社 スパッタターゲットモニタ装置
US5714768A (en) 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US6033582A (en) 1996-01-22 2000-03-07 Etex Corporation Surface modification of medical implants
FR2744805B1 (fr) 1996-02-13 1998-03-20 Pechiney Aluminium Cibles de pulverisation cathodique selectionnees par controle ultrasons pour leur faible taux d'emissions de particules
US5879524A (en) 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target
JP3565985B2 (ja) 1996-04-26 2004-09-15 愛知産業株式会社 半自動ｔｉｇ溶接装置
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US6001426A (en) 1996-07-25 1999-12-14 Utron Inc. High velocity pulsed wire-arc spray
US5914018A (en) 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
US5830327A (en) 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources
US5685959A (en) 1996-10-25 1997-11-11 Hmt Technology Corporation Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media
JP3867328B2 (ja) 1996-12-04 2007-01-10 ソニー株式会社 スパッタリングターゲット及びその製造方法
WO1998028779A1 (de) 1996-12-21 1998-07-02 Singulus Technologies Ag Vorrichtung zur kathodenzerstäubung
US5803342A (en) 1996-12-26 1998-09-08 Johnson Matthey Electronics, Inc. Method of making high purity copper sputtering targets
US6187151B1 (en) 1997-01-02 2001-02-13 Micron Technology, Inc. Method of in-situ cleaning and deposition of device structures in a high density plasma environment
US6042706A (en) 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5963778A (en) 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
JP3098204B2 (ja) 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
JP3934251B2 (ja) 1997-06-10 2007-06-20 株式会社東芝 Ｔｉｇ溶接方法および装置
US6010583A (en) 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
JPH11106904A (ja) 1997-09-29 1999-04-20 Riyouka Massey Kk スパッタリングターゲットの製造方法
GB9722649D0 (en) 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source for metallic and dielectric coatings
US5876576A (en) * 1997-10-27 1999-03-02 Applied Materials, Inc. Apparatus for sputtering magnetic target materials
US6139701A (en) 1997-11-26 2000-10-31 Applied Materials, Inc. Copper target for sputter deposition
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6579431B1 (en) 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
US6494098B1 (en) 1998-01-16 2002-12-17 Tosoh Smd, Inc. Method of ultrasonic on-line texture characterization
US6244121B1 (en) 1998-03-06 2001-06-12 Applied Materials, Inc. Sensor device for non-intrusive diagnosis of a semiconductor processing system
TW593731B (en) 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
US6177350B1 (en) 1998-04-14 2001-01-23 Applied Materials, Inc. Method for forming a multilayered aluminum-comprising structure on a substrate
US6187682B1 (en) 1998-05-26 2001-02-13 Motorola Inc. Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material
US6086735A (en) 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
JP4436970B2 (ja) 1998-06-09 2010-03-24 トーソー エスエムディー，インク． スパッターターゲット清浄度特性の定量決定のための方法と装置
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6071389A (en) 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
US6309556B1 (en) 1998-09-03 2001-10-30 Praxair S.T. Technology, Inc. Method of manufacturing enhanced finish sputtering targets
US6749103B1 (en) 1998-09-11 2004-06-15 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
WO2000028104A1 (en) 1998-11-06 2000-05-18 Scivac Sputtering apparatus and process for high rate coatings
US6149776A (en) 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
EP1135233A4 (en) 1998-12-03 2004-11-03 Tosoh Smd Inc INSERT TARGET AND METHOD FOR MANUFACTURING THE SAME
US6179973B1 (en) 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
JP3820787B2 (ja) 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
JP2000265265A (ja) 1999-03-12 2000-09-26 Kojundo Chem Lab Co Ltd 一体構造型スパッタリングターゲット
KR100472314B1 (ko) 1999-03-15 2005-03-08 마쯔시다덴기산교 가부시키가이샤 정보기록매체와 그 제조방법
US6500321B1 (en) 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6146509A (en) 1999-06-11 2000-11-14 Scivac Inverted field circular magnetron sputtering device
US6337453B1 (en) 1999-06-25 2002-01-08 West Bond, Inc. Method and apparatus for arc-forming a bonding wire ball with attenuated electro-magnetic interference
US6283357B1 (en) 1999-08-03 2001-09-04 Praxair S.T. Technology, Inc. Fabrication of clad hollow cathode magnetron sputter targets
US6337151B1 (en) 1999-08-18 2002-01-08 International Business Machines Corporation Graded composition diffusion barriers for chip wiring applications
US6413858B1 (en) 1999-08-27 2002-07-02 Micron Technology, Inc. Barrier and electroplating seed layer
US6537428B1 (en) 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
JP4240679B2 (ja) 1999-09-21 2009-03-18 ソニー株式会社 スパッタリング用ターゲットの製造方法
US6190516B1 (en) 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6610184B2 (en) 2001-11-14 2003-08-26 Applied Materials, Inc. Magnet array in conjunction with rotating magnetron for plasma sputtering
US6267851B1 (en) 1999-10-28 2001-07-31 Applied Komatsu Technology, Inc. Tilted sputtering target with shield to block contaminants
WO2001037324A1 (en) 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
WO2001039250A2 (en) 1999-11-24 2001-05-31 Honeywell International Inc. Conductive interconnection
US20020075631A1 (en) 1999-12-30 2002-06-20 Applied Materials, Inc. Iridium and iridium oxide electrodes used in ferroelectric capacitors
US6475854B2 (en) 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
US6299740B1 (en) 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
US6251242B1 (en) 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor
US6451177B1 (en) 2000-01-21 2002-09-17 Applied Materials, Inc. Vault shaped target and magnetron operable in two sputtering modes
US6227435B1 (en) 2000-02-02 2001-05-08 Ford Global Technologies, Inc. Method to provide a smooth paintable surface after aluminum joining
US6416634B1 (en) 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
US6287437B1 (en) 2000-05-05 2001-09-11 Alcatel Recessed bonding of target for RF diode sputtering
JP4981233B2 (ja) 2000-05-11 2012-07-18 トーソー エスエムディー，インク． 音波の位相変化の検出を使用する、スパッターターゲット清浄度の非破壊評価のための方法と装置
US6619537B1 (en) 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US6620296B2 (en) * 2000-07-17 2003-09-16 Applied Materials, Inc. Target sidewall design to reduce particle generation during magnetron sputtering
US6627050B2 (en) 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
JP2002060935A (ja) 2000-08-09 2002-02-28 Anelva Corp ターゲットエロージョン計測を可能としたスパッタリング装置
US7063773B2 (en) 2000-08-17 2006-06-20 Tosoh Smd, Inc. High purity sputter targets with target end-of-life indication and method of manufacture
US6497797B1 (en) 2000-08-21 2002-12-24 Honeywell International Inc. Methods of forming sputtering targets, and sputtering targets formed thereby
US7718117B2 (en) 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
KR20030064398A (ko) 2000-09-11 2003-07-31 토소우 에스엠디, 인크 내부 냉각 채널을 갖는 스퍼터 타겟의 제조 방법
US6372098B1 (en) * 2000-09-28 2002-04-16 The Boc Group, Inc. High target utilization magnet array and associated methods
US6482302B1 (en) 2000-10-13 2002-11-19 Honeywell International Inc. Container-shaped physical vapor deposition targets
US6406599B1 (en) 2000-11-01 2002-06-18 Applied Materials, Inc. Magnetron with a rotating center magnet for a vault shaped sputtering target
US6413382B1 (en) 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
US6858116B2 (en) 2000-11-17 2005-02-22 Nikko Materials Company, Limited Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles
US6916407B2 (en) 2000-11-27 2005-07-12 Unaxis Trading Ag Target comprising thickness profiling for an RF magnetron
US6887356B2 (en) 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
KR100824928B1 (ko) 2000-12-15 2008-04-28 토소우 에스엠디, 인크 고전력 스퍼터링 작업을 위한 마찰 끼워 맞춤 타겟 조립체
DE60136098D1 (de) 2000-12-18 2008-11-20 Tosoh Smd Inc Niedrigtemperaturverfahren zur sputtertarget/grundungen
US6437383B1 (en) 2000-12-21 2002-08-20 Intel Corporation Dual trench isolation for a phase-change memory cell and method of making same
US6531373B2 (en) 2000-12-27 2003-03-11 Ovonyx, Inc. Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
TW541350B (en) 2000-12-29 2003-07-11 Solar Applied Material Technol Method for producing metal target for sputtering
JP2002220661A (ja) 2001-01-29 2002-08-09 Sharp Corp スパッタリング装置に用いられるバッキングプレートおよびスパッタリング方法
DK1362132T3 (da) 2001-02-14 2006-09-11 Starck H C Inc Fornyelse af tantalkatodeforstövningsmål
TWI232241B (en) 2001-03-13 2005-05-11 Ind Tech Res Inst Method of regenerating a phase change sputtering target for optical storage media
KR100581139B1 (ko) 2001-03-14 2006-05-16 가부시키 가이샤 닛코 마테리알즈 파티클 발생이 적은 스퍼터링 타겟트, 배킹 플레이트 또는스퍼터링 장치 내의 기기 및 방전 가공에 의한 조화방법
WO2002086186A1 (en) * 2001-04-24 2002-10-31 Tosoh Smd, Inc. Target and method of optimizing target profile
US6610959B2 (en) 2001-04-26 2003-08-26 Regents Of The University Of Minnesota Single-wire arc spray apparatus and methods of using same
US6743488B2 (en) 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
US6599405B2 (en) 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
JP4009087B2 (ja) 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
US7374636B2 (en) 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US6491801B1 (en) 2001-08-07 2002-12-10 Applied Materials, Inc. Auxiliary vertical magnet outside a nested unbalanced magnetron
US6495009B1 (en) 2001-08-07 2002-12-17 Applied Materials, Inc. Auxiliary in-plane magnet inside a nested unbalanced magnetron
US6507061B1 (en) 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
JP2005508444A (ja) 2001-09-17 2005-03-31 ヘラエウス インコーポレーテッド 使用済みスパッタターゲットの再生
US6716321B2 (en) 2001-10-04 2004-04-06 Northrop Grumman Corporation Modified electrical properties of sputtered thermal coatings
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
US6946408B2 (en) 2001-10-24 2005-09-20 Applied Materials, Inc. Method and apparatus for depositing dielectric films
US20030102207A1 (en) 2001-11-30 2003-06-05 L. W. Wu Method for producing nano powder
US6828161B2 (en) 2001-12-31 2004-12-07 Texas Instruments Incorporated Method of forming an FeRAM having a multi-layer hard mask and patterning thereof
US7651658B2 (en) 2002-01-24 2010-01-26 H.C. Starck Inc. Refractory metal and alloy refining by laser forming and melting
JP3866579B2 (ja) * 2002-01-25 2007-01-10 富士フイルムホールディングス株式会社 薄層金属膜
KR100446623B1 (ko) 2002-01-30 2004-09-04 삼성에스디아이 주식회사 전계 방출 표시장치 및 그 제조방법
US6709557B1 (en) 2002-02-28 2004-03-23 Novellus Systems, Inc. Sputter apparatus for producing multi-component metal alloy films and method for making the same
US6623610B1 (en) 2002-03-02 2003-09-23 Shinzo Onishi Magnetron sputtering target for magnetic materials
KR20030071926A (ko) 2002-03-02 2003-09-13 엘지.필립스 엘시디 주식회사 스퍼터링 타겟 어셈블리 및 이를 이용한 스퍼터링 장비
US6743342B2 (en) 2002-03-12 2004-06-01 Applied Materials, Inc. Sputtering target with a partially enclosed vault
US20030175142A1 (en) 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
BE1014736A5 (fr) 2002-03-29 2004-03-02 Alloys For Technical Applic S Procede de fabrication et de recharge de cibles pour pulverisation cathodique.
KR100476893B1 (ko) 2002-05-10 2005-03-17 삼성전자주식회사 상변환 기억 셀들 및 그 제조방법들
TWI269815B (en) 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US6841050B2 (en) 2002-05-21 2005-01-11 Applied Materials, Inc. Small planetary magnetron
US6852202B2 (en) 2002-05-21 2005-02-08 Applied Materials, Inc. Small epicyclic magnetron with controlled radial sputtering profile
US6708870B2 (en) 2002-05-24 2004-03-23 Praxair S.T. Technology, Inc. Method for forming sputter target assemblies
US6652668B1 (en) 2002-05-31 2003-11-25 Praxair S.T. Technology, Inc. High-purity ferromagnetic sputter targets and method of manufacture
EP1513963A1 (en) * 2002-06-14 2005-03-16 Tosoh Smd, Inc. Target and method of diffusion bonding target to backing plate
WO2004001094A1 (en) 2002-06-19 2003-12-31 Tosoh Smd, Inc. Sputter target monitoring system
DE10229530A1 (de) 2002-07-01 2004-01-15 Basf Ag Chirale 3,4-Dihydro-2H-pyranverbindungen
US6759267B2 (en) 2002-07-19 2004-07-06 Macronix International Co., Ltd. Method for forming a phase change memory
US20040016635A1 (en) 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
US6730196B2 (en) 2002-08-01 2004-05-04 Applied Materials, Inc. Auxiliary electromagnets in a magnetron sputter reactor
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6848608B2 (en) 2002-10-01 2005-02-01 Cabot Corporation Method of bonding sputtering target materials
US20040065546A1 (en) 2002-10-04 2004-04-08 Michaluk Christopher A. Method to recover spent components of a sputter target
JP3886878B2 (ja) 2002-10-08 2007-02-28 三井金属鉱業株式会社 スパッタリングターゲットの検査方法
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
CN100526499C (zh) 2002-10-21 2009-08-12 卡伯特公司 形成溅射靶组件的方法及由此制成的组件
US6797131B2 (en) 2002-11-12 2004-09-28 Applied Materials, Inc. Design of hardware features to facilitate arc-spray coating applications and functions
US20040115945A1 (en) 2002-12-13 2004-06-17 Lowrey Tyler A. Using an electron beam to write phase change memory devices
US6811657B2 (en) 2003-01-27 2004-11-02 Micron Technology, Inc. Device for measuring the profile of a metal film sputter deposition target, and system and method employing same
US7422654B2 (en) 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7402851B2 (en) 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7344660B2 (en) 2003-03-04 2008-03-18 Nippon Mining & Metals Co., Ltd. Sputtering target and process for producing the same
US20060105182A1 (en) 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US7297247B2 (en) 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
JP2007523993A (ja) 2003-06-20 2007-08-23 キャボット　コーポレイション スパッタターゲットをバッキングプレートに結合させるための方法及び設計
US6992261B2 (en) 2003-07-15 2006-01-31 Cabot Corporation Sputtering target assemblies using resistance welding
US7425093B2 (en) 2003-07-16 2008-09-16 Cabot Corporation Thermography test method and apparatus for bonding evaluation in sputtering targets
US7893419B2 (en) 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
US20050061857A1 (en) 2003-09-24 2005-03-24 Hunt Thomas J. Method for bonding a sputter target to a backing plate and the assembly thereof
US7431195B2 (en) 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
US20050072668A1 (en) 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
KR20060123504A (ko) 2004-02-03 2006-12-01 허니웰 인터내셔널 인코포레이티드 물리증착 표적 구조체
US20050178653A1 (en) 2004-02-17 2005-08-18 Charles Fisher Method for elimination of sputtering into the backing plate of a target/backing plate assembly
US7504008B2 (en) 2004-03-12 2009-03-17 Applied Materials, Inc. Refurbishment of sputtering targets
US20060188742A1 (en) 2005-01-18 2006-08-24 Applied Materials, Inc. Chamber component having grooved surface
US7550066B2 (en) 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles
US20060021870A1 (en) 2004-07-27 2006-02-02 Applied Materials, Inc. Profile detection and refurbishment of deposition targets
US7485210B2 (en) * 2004-10-07 2009-02-03 International Business Machines Corporation Sputtering target fixture
US20060081459A1 (en) 2004-10-18 2006-04-20 Applied Materials, Inc. In-situ monitoring of target erosion
ATE546561T1 (de) 2004-11-19 2012-03-15 Applied Materials Gmbh & Co Kg Trägerplatte mit einer darauf aufgesetzten gekühlten rückenplatte
US20080271305A1 (en) 2005-01-19 2008-11-06 Tosoh Smd Etna, Llc Automated Sputtering Target Production
US7618521B2 (en) 2005-03-18 2009-11-17 Applied Materials, Inc. Split magnet ring on a magnetron sputter chamber
US20060266639A1 (en) 2005-05-24 2006-11-30 Applied Materials, Inc. Sputtering target tiles having structured edges separated by a gap
US7316763B2 (en) 2005-05-24 2008-01-08 Applied Materials, Inc. Multiple target tiles with complementary beveled edges forming a slanted gap therebetween
US7550055B2 (en) 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
US7644745B2 (en) 2005-06-06 2010-01-12 Applied Materials, Inc. Bonding of target tiles to backing plate with patterned bonding agent
US20060289305A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Centering mechanism for aligning sputtering target tiles
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056845A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
WO2007037796A2 (en) 2005-09-19 2007-04-05 Honeywell International Inc. Chalcogenide pvd components and methods of formation
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
JP2007247061A (ja) 2006-03-14 2007-09-27 Applied Materials Inc スパッタリング前のスパッタリングターゲットの前調整
US7476289B2 (en) 2006-06-29 2009-01-13 Applied Materials, Inc. Vacuum elastomer bonding apparatus and method
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20090107834A1 (en) 2007-10-29 2009-04-30 Applied Materials, Inc. Chalcogenide target and method
US20090114528A1 (en) 2007-11-07 2009-05-07 Applied Materials, Inc. Sputter coating device and coating method
US20090178919A1 (en) 2008-01-16 2009-07-16 Applied Materials, Inc. Sputter coating device
US20090272641A1 (en) 2008-04-30 2009-11-05 Applied Materials, Inc. Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell

Also Published As

Publication number Publication date
WO2008156794A3 (en) 2009-03-19
CN101680082B (zh) 2013-08-14
US20080308416A1 (en) 2008-12-18
KR20190041550A (ko) 2019-04-22
CN101680082A (zh) 2010-03-24
KR102161196B1 (ko) 2020-09-29
US8968536B2 (en) 2015-03-03
TW200907089A (en) 2009-02-16
KR20150091435A (ko) 2015-08-10
CN103422067A (zh) 2013-12-04
TWI512125B (zh) 2015-12-11
JP2011517329A (ja) 2011-06-02
CN103422067B (zh) 2016-08-10
EP2176441A2 (en) 2010-04-21
KR20100018623A (ko) 2010-02-17
WO2008156794A2 (en) 2008-12-24

Similar Documents

Publication Publication Date Title
JP5551068B2 (ja) 寿命を延ばしスパッタリング均一性を高めたスパッタリングターゲット
JP5661983B2 (ja) スパッタリングチャンバのためのターゲット及びプロセスキット部品
KR100776861B1 (ko) 큰 영역 기판의 마그네트론 스퍼터링 시스템
KR101938851B1 (ko) 보호된 백킹 플레이트를 가지는 물리 기상 증착 스퍼터링 타겟
JP2011517329A5 (enExample)
US20080178801A1 (en) Process kit for substrate processing chamber
CN118127470A (zh) 用于pvd溅射腔室的可偏压式通量优化器/准直器
WO2010123680A2 (en) Wafer processing deposition shielding components
JP4472663B2 (ja) 着脱可能な陽極を有する大面積の基板用改良型マグネトロンスパッタリングシステム
US20050178653A1 (en) Method for elimination of sputtering into the backing plate of a target/backing plate assembly
CN105452522B (zh) 封装的磁控管
JP6871067B2 (ja) スパッタリング装置
JP7092891B2 (ja) スパッタリング装置及びスパッタリング方法
US20070084720A1 (en) Magnetron sputtering system for large-area substrates having removable anodes
US11114288B2 (en) Physical vapor deposition apparatus
WO2025136590A1 (en) High conformal coating on textured surface of processing chamber component
EP1780766A1 (en) Improved magnetron sputtering system for large-area substrates having removable anodes

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110616

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120925

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121115

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130214

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130221

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130315

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130325

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130514

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140328

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140421

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140521

R150 Certificate of patent or registration of utility model

Ref document number: 5551068

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250