CN105441883B - 一种ito靶材布局方法 - Google Patents

一种ito靶材布局方法 Download PDF

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CN105441883B
CN105441883B CN201510815761.7A CN201510815761A CN105441883B CN 105441883 B CN105441883 B CN 105441883B CN 201510815761 A CN201510815761 A CN 201510815761A CN 105441883 B CN105441883 B CN 105441883B
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CN105441883A (zh
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张丽娇
马良
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Iridium gasman Aviation Technology Group Co.,Ltd.
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EAGLES MEN AERONAUTIC SCIENCE AND TECHNOLOGY GROUP Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种ITO靶材布局方法,该方法有五大步骤:一、将原有的背板进行加工,完成一个长环形跑道凹槽;二、将原有的大尺寸正长方体靶材加工成小尺寸的带有预定倾斜角度的5‑10°的斜长方体靶材;三、加工长环形跑道长直轨道与半圆形轨道对接处的一面带有小角度,另外一面是垂直体梯形体靶材;四、加工半圆形体靶材;五、将小尺寸的斜长方体靶材与梯形体靶材和半圆形体靶材安装到新加工好的带有长环形跑道凹槽的背板上,安装斜长方体靶材间留预定的空隙,空隙大小为靶材厚度的sin倾斜角度值。本发明在保证了镀膜质量的同时既节省了原料,又提高了靶材的使用寿命。

Description

一种ITO靶材布局方法
技术领域
本发明属于隐身镀膜技术领域,具体涉及一种ITO靶材布局方法。
背景技术
现在关于透明导电氧化物薄膜的研究范围很广泛,材料品种很多,但主要集中在In2O3与SnO2以及和其他氧化物混合的领域,从光的透过率方面来讲,平板显示要求透光度愈高愈好,而太阳能电池行业则要满足太阳光全波段范围的透光度及热稳定性。另一方面,薄膜的电阻率要小才能保持好的导电性。综合来说,当薄膜的光学透过率>80%,电阻率ρ<10-4Ω才算是良好的透明导电膜。ITO具有能隙Eg=3.5-4.3eV,550nm波长处可见光透过率达85%以上,红外反射率大于80%,同时兼具高的硬度和耐磨性,易刻蚀等诸多优异性能,使得ITO薄膜在众多的透明导电氧化物薄膜中脱颖而出。ITO靶的化学成分是In2O3-SnO2,加入Sn的作用是降低In的电阻,使之具有较好的导电性。按分子比,In2O3-SnO2的组成为93:7或91:9;In2O3-SnO2中In的质量分数一般超过70%。密度超过7.0g/cm3的叫超高密度靶材。但由于ITO靶材中铟材料(In)和锡(Sn)材料属于稀有材料造价昂贵,在磁控溅射过程中,用加速的离子轰击靶材表面,会产生较高的破坏应力,使得靶材表面容易发生碎裂,而一旦靶材出现裂纹后就需要立即更换才能保证镀膜的质量,更换成本巨大。
本发明采用将大块长方形靶材切割成带有小角度的平行四边形靶材,然后通过等间隔排列,减小靶材的应力集中,提高靶材的使用寿命达5-6倍,大大节约了生产成本,保证了镀膜的质量。
发明内容
1、目的:本发明的目的就是提供一种ITO靶材布局方法。它克服了现有技术的不足,是一种节约生产成本,提高工作效率的新设计。
2、技术方案:本发明一种ITO靶材布局方法,该方法具体步骤如下:
步骤一:将原有的背板进行加工,完成一个长环形跑道凹槽;
步骤二:将原有的大尺寸正长方体靶材加工成小尺寸的带有预定倾斜角度的(5-10°)的斜长方体靶材;
步骤三:加工长环形跑道长直轨道与半圆形轨道对接处的一面带有小角度,另外一面是垂直体梯形体靶材;
步骤四:加工半圆形体靶材。
步骤五:将小尺寸的斜长方体靶材与梯形体靶材和半圆形体靶材安装到新加工好的带有长环形跑道凹槽的背板上,安装斜长方体靶材间留预定的空隙,空隙大小为靶材厚度的sin(倾斜角度值)。
3、优点及功效:本发明一种ITO靶材布局方法的优点是:降低了镀膜溅射过程中靶材内部的热膨胀过程中引起的应力集中现象,增长了使用寿命。长环形轨道主要是为了更适应溅射轨道,提高了靶材的利用率,节省了昂贵的原材料。
附图说明
图1-1为原紫铜背板示意图。
图1-2为原紫铜背板切面示意图。
图1-3为ITO靶材原有布局方式示意图。
图1-4为ITO靶材原大块长方形靶材切面示意图。
图2-1为新紫铜背板正视图。
图2-2为新紫铜背板的切面图。
图3-1为ITO靶材加工布局方法的正面示意图。
图3-2为布局方式的长环形跑道两边与半圆环相连接的梯形体靶材放大示意图。
图3-3为布局方式的长环形跑道直道部分的斜长方体靶材放大示意图。
图3-4为布局方式的长环形跑道两头半圆形体靶材放大示意图。
图3-5为布局方式的两块斜长方体靶材之间排布放大图。
图4为本发明流程框图。
具体实施方式
本发明提供的是一种ITO靶材布局方法。见图4,该方法具体步骤如下:
步骤一:将原有的背板进行加工,完成一个长环形跑道凹槽;
步骤二:将原有的大尺寸正长方体靶材加工成小尺寸的带有预定倾斜角度的(5-10°)的斜长方体靶材;
步骤三:加工长环形跑道长直轨道与半圆形轨道对接处的一面带有小角度,另外一面是垂直体的梯形体靶材;
步骤四:加工半圆形体靶材。
步骤五:将小尺寸的斜长方体靶材与梯形体靶材和半圆形体靶材安装到新加工好的带有长环形跑道凹槽的背板上,安装斜长方体靶材间留预定的空隙,空隙大小为靶材厚度的sin(倾斜角度值)。
原靶材背板为长方体紫铜背板(如图1-1和图1-2所示),原靶材布局方式为9块厚度为10mm的长方体大板(如图1-3和图1-4所示),无间隔排列到长方体紫铜背板上。新的布局方式采用的紫铜背板(如图2-1和图2-1所示),这是为方便小块靶材的固定而打了一个长环形跑道槽。将原靶材布局方式改成56块带有小角度的厚度为10mm的斜长方体靶材(如图3-3所示),以间距为0.872mm(10mm*sin5°)排布贴敷在新加工好长环形凹槽的紫铜背板的两条直道上,排布方式见放大图3-5,在靠近环形道的位置贴覆厚度为10mm的四块梯形体靶材(如图3-1),两边的环形部分无缝隙贴覆两块厚度为10mm的半圆形体靶材(如图3-4)。半圆形体靶材加工要比直角形更容易加工,且溅射弧轨道即为圆形,这样既减小了加工难度,又能节省靶材原料。一种ITO靶材布局方法流程框图见图4。
采用新的布局方式布置的ITO靶材较原布局方式的ITO靶材寿命减小了靶材在接受溅射过程中产生的热应力集中,使其寿命提高了至少5-6倍,大大节约了生产成本,提高了镀膜溅射的工作效率,同时保证了溅射镀膜的质量。

Claims (1)

1.一种ITO靶材布局方法,其特征在于:该方法具体步骤如下:
步骤一:将原有的背板进行加工,完成一个长环形跑道凹槽;
步骤二:将原有的大尺寸正长方体靶材加工成小尺寸的带有预定倾斜角度的5-10°的斜长方体靶材;
步骤三:加工长环形跑道长直轨道与半圆形轨道对接处的一面带有小角度,另外一面是垂直体梯形体靶材;
步骤四:加工半圆形体靶材;
步骤五:将小尺寸的斜长方体靶材与梯形体靶材和半圆形体靶材安装到新加工好的带有长环形跑道凹槽的背板上,安装斜长方体靶材间留预定的空隙,空隙大小为靶材厚度的sin倾斜角度值。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066381A (en) * 1988-04-15 1991-11-19 Sharp Kabushiki Kaisha Target unit
CN103422067A (zh) * 2007-06-18 2013-12-04 应用材料公司 具有提高的寿命和溅射均匀度的溅射靶材

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JPS62243762A (ja) * 1986-04-16 1987-10-24 Seiko Epson Corp スパツタリングタ−ゲツト用バツキングプレ−ト
JPH05230642A (ja) * 1992-02-21 1993-09-07 Nissin High Voltage Co Ltd スパッタ・ターゲット
US20100178525A1 (en) * 2009-01-12 2010-07-15 Scott Campbell Method for making composite sputtering targets and the tartets made in accordance with the method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066381A (en) * 1988-04-15 1991-11-19 Sharp Kabushiki Kaisha Target unit
CN103422067A (zh) * 2007-06-18 2013-12-04 应用材料公司 具有提高的寿命和溅射均匀度的溅射靶材

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