JP5503466B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5503466B2
JP5503466B2 JP2010193161A JP2010193161A JP5503466B2 JP 5503466 B2 JP5503466 B2 JP 5503466B2 JP 2010193161 A JP2010193161 A JP 2010193161A JP 2010193161 A JP2010193161 A JP 2010193161A JP 5503466 B2 JP5503466 B2 JP 5503466B2
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Prior art keywords
chip mounting
wirings
chip
adhesive
wiring
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JP2010193161A
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Japanese (ja)
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JP2012054264A5 (enExample
JP2012054264A (ja
Inventor
宏 黒田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2010193161A priority Critical patent/JP5503466B2/ja
Priority to CN201110208148.0A priority patent/CN102386112B/zh
Priority to US13/196,171 priority patent/US8574963B2/en
Priority to KR1020110087423A priority patent/KR101811063B1/ko
Priority to TW100131360A priority patent/TWI525719B/zh
Publication of JP2012054264A publication Critical patent/JP2012054264A/ja
Publication of JP2012054264A5 publication Critical patent/JP2012054264A5/ja
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  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2010193161A 2010-08-31 2010-08-31 半導体装置の製造方法 Active JP5503466B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010193161A JP5503466B2 (ja) 2010-08-31 2010-08-31 半導体装置の製造方法
CN201110208148.0A CN102386112B (zh) 2010-08-31 2011-07-20 半导体器件的制造方法
US13/196,171 US8574963B2 (en) 2010-08-31 2011-08-02 Method of manufacturing semiconductor device
KR1020110087423A KR101811063B1 (ko) 2010-08-31 2011-08-30 반도체 장치의 제조 방법
TW100131360A TWI525719B (zh) 2010-08-31 2011-08-31 Manufacturing method of semiconductor device

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Application Number Priority Date Filing Date Title
JP2010193161A JP5503466B2 (ja) 2010-08-31 2010-08-31 半導体装置の製造方法

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JP2012054264A JP2012054264A (ja) 2012-03-15
JP2012054264A5 JP2012054264A5 (enExample) 2013-06-06
JP5503466B2 true JP5503466B2 (ja) 2014-05-28

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5618873B2 (ja) * 2011-03-15 2014-11-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6118652B2 (ja) * 2013-02-22 2017-04-19 ルネサスエレクトロニクス株式会社 半導体チップ及び半導体装置
CN105247666B (zh) * 2013-07-10 2017-12-01 三菱电机株式会社 半导体装置及其制造方法
KR102079795B1 (ko) * 2013-07-19 2020-02-21 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 화상형성장치 및 칩
TWI673799B (zh) * 2015-02-13 2019-10-01 台灣東電化股份有限公司 封模樹脂型模組的封裝結構及其封裝方法
EP3316294A4 (en) * 2015-06-24 2019-02-20 Renesas Electronics Corporation SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
KR20170016047A (ko) * 2015-08-03 2017-02-13 에스케이하이닉스 주식회사 플래나 스택된 반도체칩들을 포함하는 반도체 패키지
WO2019089344A1 (en) * 2017-11-03 2019-05-09 Applied Materials, Inc. Apparatus and methods for packaging semiconductor dies
KR102481468B1 (ko) * 2018-01-04 2022-12-26 삼성디스플레이 주식회사 표시 장치
CN113678234A (zh) * 2019-05-15 2021-11-19 索尼半导体解决方案公司 半导体封装件、半导体封装件制造方法和电子装置
US11462501B2 (en) * 2019-10-25 2022-10-04 Shinko Electric Industries Co., Ltd. Interconnect substrate and method of making the same
TWI784661B (zh) * 2021-08-09 2022-11-21 頎邦科技股份有限公司 軟性電路板之佈線結構
US12376236B2 (en) * 2022-04-21 2025-07-29 Skyworks Solutions, Inc. Method for normalizing solder interconnects in a circuit package module after removal from a test board
TWI855699B (zh) * 2023-05-23 2024-09-11 矽品精密工業股份有限公司 電子封裝件及其承載結構
JPWO2025013298A1 (enExample) * 2023-07-13 2025-01-16

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3619773B2 (ja) * 2000-12-20 2005-02-16 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4963148B2 (ja) * 2001-09-18 2012-06-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4372434B2 (ja) * 2003-02-24 2009-11-25 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP3798003B2 (ja) * 2004-02-05 2006-07-19 沖電気工業株式会社 ダイスボンド装置及びダイスボンド方法
JP2006032872A (ja) * 2004-07-22 2006-02-02 Sony Corp 回路基板及び半導体装置
JP4514538B2 (ja) * 2004-07-23 2010-07-28 三洋電機株式会社 回路装置およびその製造方法
JP4695148B2 (ja) * 2005-10-06 2011-06-08 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2008218848A (ja) 2007-03-07 2008-09-18 Renesas Technology Corp 半導体装置および半導体装置の製造方法

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