JP5487421B2 - トランジスタの構造及びその製造方法 - Google Patents
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- JP5487421B2 JP5487421B2 JP2008549110A JP2008549110A JP5487421B2 JP 5487421 B2 JP5487421 B2 JP 5487421B2 JP 2008549110 A JP2008549110 A JP 2008549110A JP 2008549110 A JP2008549110 A JP 2008549110A JP 5487421 B2 JP5487421 B2 JP 5487421B2
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
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- H10K85/211—Fullerenes, e.g. C60
Description
[1].H.Sirringhaus,N.Tessler,及びR.H.Friend,Science 280,1741−1743(1998);
[2].N.Stutzmann et al.,「Self−aligned,vertical−channel,polymer field−effect transistors」Science 299,1881−1884(2003);
[3].S.Tanaka et al,「Vertical− and lateral−type organic FET using pentacene evaporated films,」ElectricalEngineering in Japan,vol.149,pp.43−48,2004;
[4].J.I.Nishizawa,T.Terasaki,及びJ.Shibata,「Field−Effect Transistor Versus Analog Transistor(Static Induction Transistor),」Ieee Transactions on ElectronDevices,vol.ED22,pp.185−197,1975;
[5].L.Ma及びY.Yang,「Unique architecture and concept for high− performance organic transistors」,Applied Physics Letters 85,5084−5086(2004);
[6].V.K.Smirnov et al.,「Technology for nanoperiodic doping of a metal− oxide−semiconductor field−effect transistor channel using a self−forming wave−ordered structure,」Nanotechnology,vol.14,pp.709−715,2003;
[7].X.−Z.Bo et al.,「Pentacene−carbon nanotubes:Semiconducting assemblies for thin−film transistor applications,」Appl.Phys.Lett.,vol.87,pp.203510,2005;
[8].B.D.Gates,Q.B.Xu,J.C.Love,D.B.Wolfe,及びG.M.Whitesides,「Unconventional nanofabrication,」Annual Review of Materials Research 34,339−372(2004);
[9].W.A.Lopes及びH.M.Jaeger,「Hierarchical self−assembly of metal nanostructures on diblock copolymer scaffolds」,Nature 414,735−738(2001);
[10].M.P.Stoykovich et al.,「Directed assembly of block copolymer blends into nonregular device−oriented structures」,Science 308,1442−1446(2005);
[11].D.S.Park et al.,「Characteristics of perylene−based organic thin−film transistor with octadecyltrichlorosilane」,Journal of Vacuum Science & Technology B 23,926−929(2005);
[12].M.Yoshida et al.,「Surface potential control of an insulator layer for the high performance organic FET」Synthetic Metals 137,967−968(2003);
[13].T.B.Singh et al.,「High−mobility n−channel organic field−effect transistors based on epitaxially grown C60 films」,Organic Electronics 6,105−110(2005)
Claims (12)
- ソース、ドレイン及びゲート電極及びチャネル領域を具えるトランジスタ構造を具える電子デバイスであって、
前記チャネルの有効長さを減らすことで、前記デバイスを通る電流を増やすよう構成され、
前記ソース及びドレイン電極が、同じ層において間隔を空けた分離した電極であり、前記チャネル領域が、前記ソース及びドレイン電極間に配置されており、
前記チャネル領域が、パターンを形成した導電層に結合され、
前記導電層が、前記チャネル領域の中、前記チャネル領域の下方又は前記チャネル領域の上方に、前記チャネルに沿って間隔を空けた関係で配置された孤立した島又は細長い領域の形式で導電領域の配列を規定するパターンを有し、
前記パターンが、前記孤立した島又は細長い領域が前記孤立した島又は細長い領域間の間隔よりも大きく、電気的に間隔を空けた電荷リザーバとして機能するように、構成されていることで、前記チャネルに沿った導電率の不連続性を形成して前記チャネルの有効長さを減らし、これにより、前記デバイスを通る電流を増やすことを特徴とする電子デバイス。 - ソース、ドレイン及びゲート電極及びチャネルを具えるトランジスタ構造を具える電子デバイスであって、
前記チャネルを電荷キャリアが通過するための有効ギャップを減らすことで、前記デバイスを通る電流を増やすよう構成され、
前記ソース及びドレイン電極が、異なる層に配置されており、前記チャネル領域が、前記ソース及びドレイン電極間の半導体層に配置されており、
前記ソース電極の仕事関数が、前記チャネルの前記半導体層への電荷注入に対する障壁として動作するよう選択され、
前記ソース又はドレイン電極のうちのいずれか一方が、パターンを形成した導電層として構成され、
前記パターンが、前記パターンを形成した電極の連続的な導電領域の間に配置された間隔を開けた穴の形式であることにより、前記パターンを形成した電極に沿った導電率の不連続性を形成して前記ゲート電極による電界が前記パターンを形成した電極を通過でき、これにより、前記デバイスを通る電流を増やすことを特徴とする電子デバイス。 - 前記トランジスタ構造が、薄膜トランジスタ構造として構成されることを特徴とする請求項1に記載のデバイス。
- 前記チャネルが、半導体、ポリマー、ポリシリコン及びアモルファスシリコン材料のうちの少なくとも1でできていることを特徴とする請求項2に記載のデバイス。
- 前記導電領域の配列が、最短距離で前記ソース電極と前記ドレイン電極とを結ぶ線に沿った軸に対して傾いた少なくとも1つの軸に沿って延びていることを特徴とする請求項1に記載のデバイス。
- 前記パターンを形成した導電層のための基板として機能するブロック共重合体層を具えることを特徴とする請求項1から5のいずれか1項に記載のデバイス。
- 前記ブロック共重合体層が前記導電層の前記パターンのためのテンプレートとして機能することを特徴とする請求項6に記載のデバイス。
- 前記チャネルに結合されたパターンを形成した導電層を具える前記チャネルが、前記ゲート電極の上方に配置され、前記ゲート電極から電気的に絶縁され、
前記ソース及びドレイン電極を含む層が、前記チャネルの上方に配置され、前記チャネルへの電気接点を有することを特徴とする請求項1に記載のデバイス。 - 前記ソース及びドレイン電極を含む層が、前記ソース及びドレイン電極間に配置され前記ソース及びドレイン電極と前記チャネルとから電気的に絶縁された第2のフローティングゲート電極として機能する導電領域を具える前記パターンを形成した導電層であることを特徴とする請求項1に記載のデバイス。
- 前記間隔を空けた導電領域がn型アモルファスシリコンで形成されていることを特徴とする請求項1に記載のデバイス。
- 前記間隔を空けた導電領域が金属で形成されていることを特徴とする請求項1に記載のデバイス。
- 前記パターンが2次元配列の前記導電領域の形式であることを特徴とする請求項1から11のいずれか1項に記載のデバイス。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180020200A (ko) * | 2010-01-26 | 2018-02-27 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5181587B2 (ja) * | 2006-09-29 | 2013-04-10 | 大日本印刷株式会社 | 有機半導体素子およびその製造方法、有機トランジスタアレイ、およびディスプレイ |
EP2019313B1 (en) * | 2007-07-25 | 2015-09-16 | Stichting IMEC Nederland | Sensor device comprising elongated nanostructures, its use and manufacturing method |
US7821012B2 (en) * | 2008-03-18 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US8049215B2 (en) * | 2008-04-25 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US8039842B2 (en) * | 2008-05-22 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device including thin film transistor |
US8164086B2 (en) * | 2008-09-17 | 2012-04-24 | The Provost, Fellows and Scholars of the Colege of the Holy and Undivided Trinity of Queen Elizabeth Near Dublin | Phase-controlled field effect transistor device and method for manufacturing thereof |
JP5590877B2 (ja) * | 2008-12-26 | 2014-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8436350B2 (en) * | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
US8759830B2 (en) | 2009-03-29 | 2014-06-24 | Technion Research And Development Foundation Ltd. | Vertical organic field effect transistor and method of its manufacture |
JP5532655B2 (ja) * | 2009-03-31 | 2014-06-25 | 大日本印刷株式会社 | 有機薄膜トランジスタ、その製造方法及び画像表示装置 |
EP2348531B1 (en) * | 2010-01-26 | 2021-05-26 | Samsung Electronics Co., Ltd. | Thin film transistor and method of manufacturing the same |
TW201212320A (en) * | 2010-09-01 | 2012-03-16 | Nat Univ Chung Cheng | Organic field effect transistor with block copolymer layer |
US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
DE102011085114B4 (de) | 2011-10-24 | 2016-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnfilmtransistor |
KR101903747B1 (ko) * | 2011-11-16 | 2018-10-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 표시 장치 |
JP6426102B2 (ja) | 2012-11-05 | 2018-11-21 | ユニバーシティー オブ フロリダ リサーチ ファウンデーション,インコーポレイテッドUniversity Of Florida Research Foundation,Inc. | ディスプレイにおける輝度補償 |
KR102010113B1 (ko) * | 2012-11-30 | 2019-08-12 | 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. | 양극성 수직 전계 효과 트랜지스터 |
KR101427776B1 (ko) * | 2013-01-23 | 2014-08-12 | 서울대학교산학협력단 | 준 면발광 수직형 유기발광 트랜지스터 및 그 제조 방법 |
US9088003B2 (en) * | 2013-03-06 | 2015-07-21 | Apple Inc. | Reducing sheet resistance for common electrode in top emission organic light emitting diode display |
KR20150001528A (ko) * | 2013-06-27 | 2015-01-06 | 삼성전자주식회사 | 수직형 유기 발광 트랜지스터 및 이를 구비한 유기 엘이디 조명장치 |
WO2015077629A1 (en) | 2013-11-21 | 2015-05-28 | Atom Nanoelectronics, Inc. | Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays |
IL229837A0 (en) | 2013-12-08 | 2014-03-31 | Technion Res & Dev Foundation | electronic means |
JP6140625B2 (ja) * | 2014-03-03 | 2017-05-31 | 富士フイルム株式会社 | 有機薄膜トランジスタ |
JP6106114B2 (ja) | 2014-03-03 | 2017-03-29 | 富士フイルム株式会社 | 有機薄膜トランジスタ及びその製造方法 |
CN203983289U (zh) | 2014-06-17 | 2014-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN104934444B (zh) * | 2015-05-11 | 2018-01-02 | 深圳市华星光电技术有限公司 | 共平面型氧化物半导体tft基板结构及其制作方法 |
WO2017038944A1 (ja) * | 2015-09-02 | 2017-03-09 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機半導体組成物、有機半導体膜および有機半導体膜の製造方法 |
CA2996892A1 (en) * | 2015-09-11 | 2017-03-16 | University Of Florida Research Foundation, Incorporated | Vertical field-effect transistor |
WO2017096058A1 (en) | 2015-12-01 | 2017-06-08 | LUAN, Xinning | Electron injection based vertical light emitting transistors and methods of making |
US10541374B2 (en) | 2016-01-04 | 2020-01-21 | Carbon Nanotube Technologies, Llc | Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices |
US10847757B2 (en) | 2017-05-04 | 2020-11-24 | Carbon Nanotube Technologies, Llc | Carbon enabled vertical organic light emitting transistors |
US10978640B2 (en) * | 2017-05-08 | 2021-04-13 | Atom H2O, Llc | Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof |
US10665796B2 (en) * | 2017-05-08 | 2020-05-26 | Carbon Nanotube Technologies, Llc | Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof |
CN107611180A (zh) * | 2017-07-17 | 2018-01-19 | 华南理工大学 | 一种垂直沟道结构双电层薄膜晶体管及其制备方法 |
CN110797407B (zh) * | 2019-10-21 | 2023-06-30 | 上海集成电路研发中心有限公司 | 一种空气隙晶体管器件结构及其制造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61234041A (ja) * | 1985-04-09 | 1986-10-18 | Tdk Corp | 半導体装置及びその製造方法 |
JP2862739B2 (ja) * | 1992-10-13 | 1999-03-03 | シャープ株式会社 | 液晶表示装置 |
JPH06181315A (ja) * | 1992-12-14 | 1994-06-28 | Sharp Corp | 半導体素子 |
JPH07211913A (ja) * | 1994-01-27 | 1995-08-11 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3702096B2 (ja) * | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
JP4436469B2 (ja) * | 1998-09-30 | 2010-03-24 | 三洋電機株式会社 | 半導体装置 |
JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
JP2002050704A (ja) * | 2000-08-01 | 2002-02-15 | Sony Corp | メモリ素子およびその製造方法並びに集積回路 |
JP5061414B2 (ja) * | 2001-09-27 | 2012-10-31 | 東レ株式会社 | 薄膜トランジスタ素子 |
JP2003243411A (ja) * | 2002-02-13 | 2003-08-29 | Seiko Epson Corp | 有機半導体装置およびその製造方法 |
JP4419425B2 (ja) * | 2002-04-22 | 2010-02-24 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタ素子 |
JP4878429B2 (ja) * | 2002-07-22 | 2012-02-15 | 株式会社リコー | 能動素子及びそれを有するel表示素子 |
US7084423B2 (en) * | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
US6833556B2 (en) * | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
JP2004103905A (ja) * | 2002-09-11 | 2004-04-02 | Pioneer Electronic Corp | 有機半導体素子 |
JP4059512B2 (ja) * | 2002-09-20 | 2008-03-12 | 株式会社 日立ディスプレイズ | 半透過反射型液晶表示装置 |
KR100508545B1 (ko) * | 2002-12-14 | 2005-08-17 | 한국전자통신연구원 | 수직 구조의 반도체 박막 트랜지스터 |
JP2004296819A (ja) * | 2003-03-27 | 2004-10-21 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JP4586334B2 (ja) * | 2003-05-07 | 2010-11-24 | ソニー株式会社 | 電界効果型トランジスタ及びその製造方法 |
US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
JP4328561B2 (ja) * | 2003-05-30 | 2009-09-09 | キヤノン株式会社 | 有機半導体トランジスタ |
EP1650809A4 (en) * | 2003-07-17 | 2011-08-10 | Panasonic Corp | THIN FILM TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF |
JP2005079352A (ja) * | 2003-08-29 | 2005-03-24 | Fuji Photo Film Co Ltd | 有機スイッチング素子およびその製造方法、並びに表示装置用スイッチング素子アレイ |
KR100579548B1 (ko) * | 2003-12-30 | 2006-05-12 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
WO2005069383A1 (ja) * | 2004-01-15 | 2005-07-28 | Matsushita Electric Industrial Co., Ltd. | 電界効果トランジスタ及びそれを用いた表示装置 |
JP4100351B2 (ja) * | 2004-02-09 | 2008-06-11 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JP2005259737A (ja) * | 2004-03-09 | 2005-09-22 | Canon Inc | 有機半導体デバイス及びその製造方法 |
US8217386B2 (en) | 2006-06-29 | 2012-07-10 | University Of Florida Research Foundation, Inc. | Short channel vertical FETs |
US7879678B2 (en) * | 2008-02-28 | 2011-02-01 | Versatilis Llc | Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180020200A (ko) * | 2010-01-26 | 2018-02-27 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
KR101963225B1 (ko) | 2010-01-26 | 2019-07-31 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
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