JP5455841B2 - 負の温度係数を有する電気デバイス - Google Patents
負の温度係数を有する電気デバイス Download PDFInfo
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Description
(AIII z,AII (3/2)z,AI 3z)[NiIIMnIII 2-z]O4
式中、0.01≦z≦0.6である。
NiII 1-z[MnIII 2MnII z]O4
式中、0.≦z≦0.4である。
(AIII (2/3)z,AII z,AI 2z)[MnIII 2MnII 1-z]O4
式中、0.01≦z≦0.6である。
ABO3
式中、金属Aは希土類元素、ストロンチウム又はバリウムであり、金属Bはマグネシウム、チタン、バナジウム、クロム、アルミニウム、マンガン、鉄、コバルト又はニッケルである。
図2A及び2Bで記載されたように構成されているTNCデバイスを、EIA標準規格に従って製造した。このデバイスは構造タイプに応じて長さ約0.9〜4.8mm、幅約0.4〜6.8mm、高さ約0.6〜1.7mmを有する。基体内部の導電性電極層として、この場合に例えばAgPd電極が使用される。デバイスは、この場合、例えば厚さ100μmを有する第1のセラミック部分領域2を有し、この場合に、前記の部分領域の表面上に、厚さ390μmの第2のセラミック部分領域5が存在する(図2B参照)。このようなデバイスは、29.319Ωの定格比抵抗R25及び3.779KのB値を有する。第1及び第2のセラミック部分領域の同じ配置を有する他のデバイスは、厚さ800μmの第1のセラミック部分領域と、その上に存在する厚さ40μmの第2のセラミック部分領域とを有する。このデバイスは、最初に挙げたデバイスとは異なる電気特性を有する、つまり11.270Ωの定格抵抗R25と3.675KのB値とを有する。図2Bの横断面図に見られるように、2つのセラミック領域からなる全断面図はデバイスの2つのバリエーションの場合に同じである。2つのデバイスの第1のセラミック部分領域は、この場合にニッケル−マンガン−スピネルからなり、その際に、既に前記した一般式に従って、マンガンは一価〜三価の金属により置き換えられていてもよい。第2のセラミック部分領域についての材料として、2つのデバイスにおいて亜鉛−マンガン−スピネルが使用される。
NTCデバイスは、図5A及び5B中に示された配置により構成されている。この場合に、NTCデバイスの基体は積層体から構成されていて、この積層体は第1及び第2のセラミック部分領域からなり、この場合に、第2のセラミック部分領域5は積層体の最上層及び最下層を形成する。第2のセラミック部分層は、亜鉛−マンガン−スピネルからなり、第1のセラミック部分層は既に前記したニッケル−マンガン−スピネルからなる:
NiII 1-z[MnIII 2MnII z]O4
式中、0.0≦z≦0.4。
Claims (17)
- 電気デバイスにおいて、
前記電気デバイスは、異なる材料からなるそれぞれ少なくとも1つの空間的に形成された第1のセラミック部分領域(2)と少なくとも1つの空間的に形成された第2のセラミック部分領域(5)とを有する基体を有し、
第1のセラミック部分領域の材料と第2のセラミック部分領域の材料とは、それぞれ負の温度係数を有する抵抗(NTCセラミック)を有し、
少なくとも1つの第1のコンタクト層(10)と第2のコンタクト層(15)とが前記基体の表面上に設けられ、
2つのセラミック部分領域は第1のコンタクト層と第2のコンタクト層との間に配置され、
第1のセラミック部分領域(2)は長方体の形で存在し、第1のコンタクト層と第2のコンタクト層との間で露出する、前記第1のセラミック部分領域(2)の全ての表面上に、第2のセラミック部分領域(5)が層状に配置され、
前記基体(1)中に間隔を置いて配置された複数の導電性電極層(25)が存在し、前記導電性電極層(25)はそれぞれコンタクト層(10,15)の一方と導電性に接続していて、2つの電極積層体(30,35)を形成し、前記電極積層体(30,35)はそれぞれ一方のコンタクト層と接触し、
前記複数の導電性電極層(25)は第1のセラミック部分領域(2)中にだけ配置され、
前記2つのコンタクト層は前記基体の向かい合う端面に配置され、前記電極積層体(30,35)のそれぞれ一方の構成要素である複数の電極層(25)が向かい合っており、それによって、基体およびコンタクト層の寸法は同じ寸法のままで、異なるB値と抵抗値に設定可能な構造を有する電気デバイス。 - 前記2つの電極積層体(30,35)の間に、電極層のない基体の領域(40)が存在する、請求項1記載のデバイス。
- 前記電極積層体(30,35)の一方の電極層(25)は、それぞれ前記電極積層体(30,35)の他方の電極層(25)と向かい合っている、請求項1又は2記載のデバイス。
- 他の第1のセラミック部分領域(2)が存在し、複数の第1のセラミック部分領域(2)は相互にその間に形状接続により配置された第3のセラミック部分領域(7)により相互に接続され、第1のセラミック部分領域(2)及び第3のセラミック部分領域(7)によって構成された積層体の、第1のコンタクト層と第2のコンタクト層との間の全ての表面上に、第2のセラミック部分領域(5)が配置されている、請求項1から3までのいずれか1項記載のデバイス。
- 第1のセラミック部分領域の材料と第2のセラミック部分領域の材料とは異なる誘電率を有する、請求項1から4までのいずれか1項記載のデバイス。
- 第1のセラミック部分領域の材料と第2のセラミック部分領域の材料とは異なる電気抵抗−温度−特性曲線を有する、請求項1から5までのいずれか1項記載のデバイス。
- 第1のセラミック部分領域の材料と第2のセラミック部分領域の材料とは、所定の温度で異なる電気抵抗を有する、請求項1から6までのいずれか1項記載のデバイス。
- 2つの向かい合っている電極層(25)に対して平行に、他の電極層(26)が配置されている、請求項1から7までのいずれか1項記載のデバイス。
- 前記電極層(25)が相互にオーバーラップして配置され、かつ交互にコンタクト層(10,15)の一方とそれぞれ接続されていて、前記2つの電極積層体(30,35)は櫛状に相互に入り込んでいる、請求項1及び3から8までのいずれか1項記載のデバイス。
- 第1のセラミック部分領域又は第2のセラミック部分領域の少なくとも一方の材料が、次の一般式:
a) (AIII z,AII (3/2)z,AI 3z)[NiIIMnIII 2-z]O4
[前記式中、三価の金属AIIIは鉄、チタン、アルミニウム又はジルコニウムであり、二価の金属AIIはコバルト、亜鉛、鉄、カルシウム、マグネシウム、ジルコニウム又は銅であり、一価の金属AIはリチウムであり、その際、0.01≦z≦0.6である。]若しくは
b) NiII 1-z[MnIII 2MnII z]O4
[式中、0.0≦z≦0.4である。]
のニッケル−マンガン−スピネルを有するか、
又は次の一般式:
c) (AIII (2/3)z,AII z,AI 2z)[MnIII 2MnII 1-z]O4
[式中、0.01≦z≦0.6である。]
のマンガン−スピネルを有する、請求項1から9までのいずれか1項記載のデバイス。 - スピネルは、次のグループ:チタン、アルミニウム、カルシウム、ジルコニウム、マグネシウムから選択される金属でドープされている、請求項10記載のデバイス。
- 第1のセラミック材料はニッケル−マンガン−スピネル(NiMn2O4)を有し、第2のセラミック材料は亜鉛−マンガン−スピネル(ZnMn2O4)を有する、請求項10又は11記載のデバイス。
- 2つのセラミック材料の少なくとも一方は、一般式:
ABO3
[式中、金属Aは希土類の元素、ストロンチウム又はバリウムであり、金属Bはマグネシウム、チタン、バナジウム、クロム、アルミニウム、マンガン、鉄、コバルト又はニッケルである]で示されるペロブスカイトセラミックを有する、請求項1から11までのいずれか1項記載のデバイス。 - 大部分が両方のコンタクト層(10,15)を有していない、基体(1)の少なくとも2つの向かい合う表面上に、保護層(65)が設けられている、請求項1から13までのいずれか1項記載のデバイス。
- 保護層(65)が106Ωcmを上回る高い比電気抵抗を有する材料を有する、請求項14記載のデバイス。
- 前記保護層が、ガラス、セラミック、シラザン又はパリレンを有する、請求項15記載のデバイス。
- 電気デバイスにおいて、
前記電気デバイスは、異なる材料からなるそれぞれ少なくとも1つの空間的に形成された第1のセラミック部分領域(2)と少なくとも1つの空間的に形成された第2のセラミック部分領域(5)とを有する基体を有し、
第1のセラミック部分領域の材料と第2のセラミック部分領域の材料とは、それぞれ負の温度係数を有する抵抗(NTCセラミック)を有し、
少なくとも1つの第1のコンタクト層(10)と第2のコンタクト層(15)とが前記基体の表面上に設けられ、
2つのセラミック部分領域は第1のコンタクト層と第2のコンタクト層との間に配置され、
前記2つのコンタクト層が前記基体(1)の向かい合う面(45,50)上に配置され、
第1のセラミック部分領域(2)と第2のセラミック部分領域(5)とはそれぞれ層として構成されて積層体が形成され、
前記コンタクト層は前記積層体の最上層及び最下層上に配置されており、それによって、基体およびコンタクト層の寸法は同じ寸法のままで、異なるB値と抵抗値に設定可能な構造を有する電気デバイス。
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US20050062582A1 (en) | 2005-03-24 |
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