JP5444255B2 - 透過モードにおける干渉変調器 - Google Patents
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Description
投写ディスプレイシステムは、IMOD変調器を含むことができる。投写ディスプレイの属性は、特に、IMOD特性に適合されうる。
大スクリーンIMODディスプレイデバイスは、テレビおよびコンピュータモニタと接続して使用されうる。いくつかの実施形態では、これらのデバイスは、電力供給(100〜110VAC、または200V超、例えば英国または欧州において)と接続されるため、電力は、携帯型のバッテリ駆動のデバイスに課せられる制約に比較すると、重要性は小さい。いくつかの実施形態において、ディスプレイは、パルス幅変調技術を使用してグレースケールを達成することができる。いくつかの実施形態において、パルス幅変調駆動は、短いフレームタイムおよび/または高導電性の行および列のトレースを必要とする。いくつかの実施形態において、デバイスは、バックライト付きデバイスである。いくつかの実施形態において、デバイスは、多層フィルムスタックを有する透過型IMODを含む。
14、14a、14b 可動反射層
16、16a、16b 光学スタック
18 柱
19 間隙
20 透明基板
21 プロセッサ
22 配列ドライバ
24 行ドライバ回路
26 列ドライバ回路
27 ネットワークインターフェース
28 フレームバッファ
29 ドライバコントローラ
30 ディスプレイ配列
32 テザー
34 変形可能層
40 ディスプレイデバイス
41 ハウジング
42 支柱プラグ
43 アンテナ
44 バス構造
45 スピーカ
46 マイクロフォン
47 トランシーバ
48 入力デバイス
50 電源
52 調整ハードウェア
54 透過型干渉変調器
55 固定光学スタック
56A、56B 透明基板
57 移動光学スタック
58 透明電極層
60A、60B 銀層
62 間隙
64A、64B グラフ
66A、66B シミュレーションされた透過率
68 最大透過率
74 透過型干渉変調器
75 固定光学スタック
76A、76B 基板
77 可動光学スタック
78A、78B SiO2層
80A、80B 銀層
82 空隙
84A、84B、84C グラフ
86A、86B、86C モデル化された透過率
88A、88B 最大透過率
90 モデル化されたカラープロット(色空間色度図)
92A 緑に対応する点
92B 赤に対応する点
92C 青に対応する点
94 境界
96 線
104A、104B、104C グラフ
106A、106B、106C モデル化された透過率のプロット
108A、108B 最大透過率
110 色空間色度図
112A 緑に対応する点
112B 赤に対応する点
112C 青に対応する点
114 境界
116 線
124 透過型干渉変調器
125 固定光学スタック
126A、126B 基板
128A、128B、128C、128D MgF2層
130A、130B、130C、130D SiC層
132 空隙
134A、134B、134C グラフ
136A、136B、136C シミュレーションされた透過率のプロット
138A、138B、138C 最大透過率
140 色空間色度図
142A 緑に対応する点
142B 赤に対応する点
142C 青に対応する点
144 境界
146 線
200 透過型IMOD投写デバイス
202 光源
204 透過型干渉変調器
206A 第1のレンズ
206B 第2のレンズ
206C 第3のレンズ
206D 第4のレンズ
220 透過型IMOD投写デバイス
222 光源
224A、224B、224C 透過型IMOD
226A、226B、226C レンズ
228A、228B 2色フィルタ
230A、230B、230C ミラー
232 結合キューブ
240 反射型IMOD投写デバイス
242 光源
244 偏光子
246A 第1のレンズ
246B 第2のレンズ
248 波長板
250 偏光ビームスプリッタ
252 IMOD
260 IMOD投写デバイス
262 光源
264 反射型IMOD
266A 第1のレンズ
266B 第2のレンズ
300 色回転子構成
310 回転するプリズム組立体構成
320 回転円盤構成
330 カラープリズム構成
350 大スクリーンディスプレイ
354 背面バス
356 透明基板
358 高い柱
360 固定光学スタック
362 可動光学スタック
364 接続リング
366 低い柱
370 大スクリーンディスプレイ
374 バックライト
376 背部透明層
378 前部透明層
380 固定光層
382 移動光層
384 接続リング
390 吸収性黒色マスク
392 反射性黒色マスク
400 大スクリーンディスプレイ
402 光学スタック
404 反射器層
406 光誘導板
408 角度転換フィルム
410 間隙
412 輝度フィルム
414 透過型IMOD
420 画素レイアウト
422 光学スタック
424 柱
426 電極リング
428 開口
Claims (46)
- 基板と、
前記基板の第1の面上に配置され、部分反射ミラーを備え、第1の位置から第2の位置に動くように構成される可動膜と、を備え、
前記基板が、第1の透明な基板、2つのMgF 2 層及び2つのSiC層を備え、第1のMgF 2 層が前記第1の透明な基板上に配設され、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記部分反射ミラーが、2つのMgF 2 層及び2つのSiC層を備え、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記第1の位置にある前記可動膜により、所望の波長範囲の可視光が、前記基板の第2の面及び前記可動膜を通過し、
前記第2の位置にある前記可動膜により、実質的にすべての所望の波長範囲の前記可視光が遮断される、透過型微小機械デバイス。 - 前記第2の位置にある前記可動膜により、前記基板の前記第2の面上に入射する光の少なくとも90%が遮断される、請求項1に記載の透過型微小機械デバイス。
- 前記第2の位置にある前記可動膜により、前記基板の前記第2の面上に入射する前記光の少なくとも95%が遮断される、請求項2に記載の透過型微小機械デバイス。
- 前記第2の位置にある前記可動膜により、前記基板の前記第2の面上に入射する前記光の少なくとも98%が遮断される、請求項3に記載の透過型微小機械デバイス。
- 前記第2の位置にある前記可動膜により、前記基板の前記第2の面上に入射する前記光の少なくとも99%が遮断される、請求項4に記載の透過型微小機械デバイス。
- 前記第2の位置にある前記可動膜により、前記可動膜が、所定の波長の光を通すように構成された光干渉キャビティを少なくとも部分的に画定し、前記可動膜が他の波長の光を吸収するように構成された吸収層を備える、請求項5に記載の透過型微小機械デバイス。
- 前記吸収層が半導体を含む、請求項6に記載の透過型微小機械デバイス。
- 誘電体材料を含む機械層をさらに備える、請求項1に記載の透過型微小機械デバイス。
- 前記誘電体材料がSiNまたはSiO2を含む、請求項8に記載の透過型微小機械デバイス。
- 前記誘電体材料の上部に配設された金属の薄層をさらに備える、請求項8に記載の透過型微小機械デバイス。
- 前記金属の薄層がAuまたはAgを含む、請求項10に記載の透過型微小機械デバイス。
- 前記部分反射ミラーが柔軟性のある銀で覆われた膜を備える、請求項1に記載の透過型微小機械デバイス。
- 前記微小機械デバイスを出る光を合焦するように構成されたレンズをさらに備える、請求項12に記載の透過型微小機械デバイス。
- 第1の光学スタックと、
前記第1の光学スタックと間隙で離隔された第2の光学スタックとを備え、
前記第1の光学スタックが第1の実質的に透明な基板を備え、光源と前記第2の光学スタックとの間に配置され、
前記第2の光学スタックが第2の実質的に透明な基板を備え、前記第1の光学スタックとレンズとの間に配置され、
前記第1の光学スタックが、2つのMgF2層と2つのSiC層とを備え、第1のMgF2層が前記第1の実質的に透明な基板上に配設され、第1のSiC層が前記第1のMgF2層上に配設され、第2のMgF2層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF2層上に配設され、
第2の光学スタックが2つのMgF2層と2つのSiC層とを備え、第1のMgF2層が前記第2の実質的に透明な基板上に配設され、第1のSiC層が前記第1のMgF2層上に配設され、第2のMgF2層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF2層上に配設されている、透過型機械デバイス。 - 直線偏光子をさらに備える、請求項14に記載の透過型機械デバイス。
- 光アイソレータをさらに備える、請求項14に記載の透過型機械デバイス。
- 前記レンズが、光を画素の上に合焦するように構成される、請求項14に記載の透過型機械デバイス。
- 前記レンズが、レンズのアレイを備える、請求項14に記載の透過型機械デバイス。
- 透明基板と、
前記透明基板の第1の面上に配設された第1の反射層と、
第2の反射層を備え、前記第2の反射層および前記第1の反射層が可変光キャビティを形成する可動膜と、を備え、
前記第1の反射層が、2つのMgF 2 層及び2つのSiC層を備え、第1のMgF 2 層が前記透明基板上に配設され、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記第2の反射層が、2つのMgF 2 層及び2つのSiC層を備え、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記可動膜が第1の位置から第2の位置に動くとき、前記可変光キャビティが調節され、
前記可動膜が前記第1の位置にある場合、前記可動膜によって、前記透明基板上に入射し透過する紫外光または赤外光の範囲の波長の光が、前記可動膜を透過することが可能になり、前記可動膜上に入射する可視光の実質的に全波長範囲を吸収する、透過型ディスプレイ。 - 前記第1の反射層が、2.0より大きい屈折率を有する材料を含む、請求項19に記載のディスプレイ。
- 前記第1の反射層がAu、AgまたはSiCを含む、請求項19に記載のディスプレイ。
- 入射光の前記全波長範囲が特定の波長である、請求項19に記載のディスプレイ。
- 前記可動膜がおよそ300nmにおける前記第1の位置にある場合、ピーク透過率がおよそ650nmである、請求項19に記載のディスプレイ。
- 前記可動膜が前記第2の位置にある場合、ピーク透過率がおよそ450nmである、請求項19に記載のディスプレイ。
- 直線偏光子をさらに備える、請求項19に記載のディスプレイ。
- 光アイソレータをさらに備える、請求項19に記載のディスプレイ。
- 前記可動膜を出る光を合焦するように構成されたレンズをさらに備える、請求項19に記載のディスプレイ。
- 部分反射ミラーを備え、第1の位置から第2の位置に動くように構成される可動膜と、
前記可動膜の第1の面上に位置する基板と、を備え、
前記基板が、第1の透明な基板、2つのMgF 2 層及び2つのSiC層を備え、第1のMgF 2 層が前記第1の透明な基板上に配設され、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記部分反射ミラーが、2つのMgF 2 層及び2つのSiC層を備え、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記第1の位置にある前記可動膜により、前記可動膜の第2の面上に入射する所望の波長範囲の可視光が、前記可動膜及び前記基板を透過し、
前記第2の位置にある前記可動膜により、所望の波長範囲の実質的にすべての可視光が遮断される、デバイス。 - 前記第2の位置にある前記可動膜により、前記可動膜の前記第2の面上に入射する可視光の少なくとも90%が遮断される、請求項28に記載のデバイス。
- 前記第2の位置にある前記可動膜により、前記可動膜が、所望の波長の光を通すように構成された光干渉キャビティを少なくとも部分的に画定し、前記可動膜が他の波長の光を吸収するように構成された吸収層を含む、請求項28に記載のデバイス。
- 前記吸収層が半導体を含む、請求項30に記載のデバイス。
- 誘電体材料を含む機械層をさらに含む、請求項28に記載のデバイス。
- 前記誘電体材料が窒化シリコン(「SiN」)または二酸化シリコン(「SiO2」)の少なくとも一方を含む、請求項32に記載のデバイス。
- 前記誘電体材料の上部に配設された金属の薄層をさらに備える、請求項32に記載のデバイス。
- 前記金属の薄層が金(「Au」)または銀(「Ag」)の少なくとも一方を含む、請求項34に記載のデバイス。
- 前記部分反射ミラーが柔軟性のある銀で覆われた膜を含む、請求項28に記載のデバイス。
- 前記可動膜及び前記基板を透過する光を合焦するように構成されたレンズをさらに備える、請求項28に記載のデバイス。
- 透明基板と、
前記透明基板の第1の面上に配設された第1の反射層と、
第2の反射層を備え、前記第2の反射層及び前記第1の反射層が可変光キャビティを形成する可動膜と、を備え、
前記第1の反射層が、2つのMgF 2 層及び2つのSiC層を備え、第1のMgF 2 層が前記透明基板上に配設され、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記第2の反射層が、2つのMgF 2 層及び2つのSiC層を備え、第1のSiC層が前記第1のMgF 2 層上に配設され、第2のMgF 2 層が前記第1のSiC層上に配設され、第2のSiC層が前記第2のMgF 2 層上に配設され、
前記可動膜が第1の位置から第2の位置に動くとき、可変光キャビティが調節され、
前記可動膜が第1の位置にある場合、前記可動膜によって、前記可動膜上に入射し透過する波長の光が前記可動膜及び前記透明基板を透過し、入射可視光の実質的に全波長範囲を吸収する、透過型ディスプレイ。 - 前記第1の反射層が、2.0より大きい屈折率を有する材料を含む、請求項38に記載のディスプレイ。
- 前記第1の反射層が、金(「Au」)、銀(「Ag」)または炭化シリコン(「SiC」)を含む、請求項38に記載のディスプレイ。
- 入射光の前記全波長範囲が特定の波長である、請求項38に記載のディスプレイ。
- 前記可動膜がおよそ300nmにおける前記第1の位置にある場合、ピーク透過率がおよそ650nmである、請求項38に記載のディスプレイ。
- 前記可動膜が前記第2の位置にある場合、ピーク透過率がおよそ450nmである、請求項38に記載のディスプレイ。
- 直線偏光子、光アイソレータ、または前記可動膜を出る光を合焦するように構成されたレンズをさらに備える、請求項38に記載のディスプレイ。
- 前記レンズが、光を画素の上に合焦するように構成される、請求項44に記載のディスプレイ。
- 前記レンズが、レンズのアレイを備える、請求項44に記載のディスプレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US3491708P | 2008-03-07 | 2008-03-07 | |
US61/034,917 | 2008-03-07 | ||
PCT/US2009/035737 WO2009114323A1 (en) | 2008-03-07 | 2009-03-02 | Interferometric modulator in transmission mode |
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JP2011515707A JP2011515707A (ja) | 2011-05-19 |
JP5444255B2 true JP5444255B2 (ja) | 2014-03-19 |
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JP2010549789A Expired - Fee Related JP5444255B2 (ja) | 2008-03-07 | 2009-03-02 | 透過モードにおける干渉変調器 |
Country Status (10)
Country | Link |
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US (3) | US7944604B2 (ja) |
EP (1) | EP2257846A1 (ja) |
JP (1) | JP5444255B2 (ja) |
KR (1) | KR20100138974A (ja) |
CN (1) | CN101960355A (ja) |
BR (1) | BRPI0908985A2 (ja) |
CA (1) | CA2717312A1 (ja) |
RU (1) | RU2010134759A (ja) |
TW (1) | TW200944470A (ja) |
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2009
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- 2009-03-02 BR BRPI0908985A patent/BRPI0908985A2/pt not_active Application Discontinuation
- 2009-03-02 JP JP2010549789A patent/JP5444255B2/ja not_active Expired - Fee Related
- 2009-03-02 EP EP09721055A patent/EP2257846A1/en not_active Withdrawn
- 2009-03-02 RU RU2010134759/28A patent/RU2010134759A/ru unknown
- 2009-03-02 WO PCT/US2009/035737 patent/WO2009114323A1/en active Application Filing
- 2009-03-02 KR KR1020107021526A patent/KR20100138974A/ko not_active Application Discontinuation
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CA2717312A1 (en) | 2009-09-17 |
US8693084B2 (en) | 2014-04-08 |
KR20100138974A (ko) | 2010-12-31 |
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JP2011515707A (ja) | 2011-05-19 |
CN101960355A (zh) | 2011-01-26 |
WO2009114323A1 (en) | 2009-09-17 |
US7944604B2 (en) | 2011-05-17 |
BRPI0908985A2 (pt) | 2015-11-24 |
RU2010134759A (ru) | 2012-04-20 |
TW200944470A (en) | 2009-11-01 |
US20090225395A1 (en) | 2009-09-10 |
EP2257846A1 (en) | 2010-12-08 |
US8174752B2 (en) | 2012-05-08 |
US20120212795A1 (en) | 2012-08-23 |
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