JP5431791B2 - 静電気保護回路 - Google Patents

静電気保護回路 Download PDF

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Publication number
JP5431791B2
JP5431791B2 JP2009127426A JP2009127426A JP5431791B2 JP 5431791 B2 JP5431791 B2 JP 5431791B2 JP 2009127426 A JP2009127426 A JP 2009127426A JP 2009127426 A JP2009127426 A JP 2009127426A JP 5431791 B2 JP5431791 B2 JP 5431791B2
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Japan
Prior art keywords
circuit
protection
resistance
protection circuits
gate electrode
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Active
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JP2009127426A
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English (en)
Japanese (ja)
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JP2010278109A (ja
JP2010278109A5 (enExample
Inventor
泰之 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009127426A priority Critical patent/JP5431791B2/ja
Priority to US12/801,098 priority patent/US8493698B2/en
Publication of JP2010278109A publication Critical patent/JP2010278109A/ja
Publication of JP2010278109A5 publication Critical patent/JP2010278109A5/ja
Application granted granted Critical
Publication of JP5431791B2 publication Critical patent/JP5431791B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009127426A 2009-05-27 2009-05-27 静電気保護回路 Active JP5431791B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009127426A JP5431791B2 (ja) 2009-05-27 2009-05-27 静電気保護回路
US12/801,098 US8493698B2 (en) 2009-05-27 2010-05-21 Electrostatic discharge protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009127426A JP5431791B2 (ja) 2009-05-27 2009-05-27 静電気保護回路

Publications (3)

Publication Number Publication Date
JP2010278109A JP2010278109A (ja) 2010-12-09
JP2010278109A5 JP2010278109A5 (enExample) 2012-05-17
JP5431791B2 true JP5431791B2 (ja) 2014-03-05

Family

ID=43219950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009127426A Active JP5431791B2 (ja) 2009-05-27 2009-05-27 静電気保護回路

Country Status (2)

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US (1) US8493698B2 (enExample)
JP (1) JP5431791B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711000B2 (ja) * 2011-02-16 2015-04-30 ラピスセミコンダクタ株式会社 過電圧保護回路及び半導体集積回路
WO2013051175A1 (ja) 2011-10-06 2013-04-11 パナソニック株式会社 半導体集積回路装置
US8982517B2 (en) * 2012-02-02 2015-03-17 Texas Instruments Incorporated Electrostatic discharge protection apparatus
JP5985851B2 (ja) * 2012-03-27 2016-09-06 旭化成エレクトロニクス株式会社 Ｅｓｄ保護回路及びｅｓｄ保護回路に係る半導体装置
JP5781022B2 (ja) * 2012-06-15 2015-09-16 株式会社東芝 静電保護回路、および、半導体装置
JP6143690B2 (ja) 2014-03-12 2017-06-07 株式会社東芝 出力回路
JP6398696B2 (ja) * 2014-12-22 2018-10-03 セイコーエプソン株式会社 静電気保護回路及び半導体集積回路装置
JP6405986B2 (ja) * 2014-12-22 2018-10-17 セイコーエプソン株式会社 静電気保護回路及び半導体集積回路装置
JP6009597B2 (ja) * 2015-03-05 2016-10-19 ラピスセミコンダクタ株式会社 過電圧保護回路及び半導体集積回路
CN108075460B (zh) * 2016-11-15 2021-10-29 恩智浦有限公司 具有反馈控制的浪涌保护电路
JP6480057B2 (ja) * 2018-04-16 2019-03-06 ルネサスエレクトロニクス株式会社 半導体装置
CN115173384B (zh) * 2021-04-01 2025-11-14 长鑫存储技术有限公司 静电防护电路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3196422B2 (ja) * 1993-04-30 2001-08-06 ソニー株式会社 入出力保護回路
KR100188135B1 (en) * 1996-06-27 1999-06-01 Samsung Electronics Co Ltd Protection device of semiconductor device
US6552594B2 (en) * 1997-03-27 2003-04-22 Winbond Electronics, Corp. Output buffer with improved ESD protection
US5991134A (en) * 1997-06-19 1999-11-23 Advanced Micro Devices, Inc. Switchable ESD protective shunting circuit for semiconductor devices
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
JP2003068870A (ja) * 2001-08-29 2003-03-07 Yamaha Corp Ｅｓｄ保護回路
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7327092B2 (en) * 2005-11-30 2008-02-05 Ge Homeland Protection, Inc. Current driving circuit for inductive loads
US8144441B2 (en) * 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits

Also Published As

Publication number Publication date
JP2010278109A (ja) 2010-12-09
US8493698B2 (en) 2013-07-23
US20100302694A1 (en) 2010-12-02

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