JP5411528B2 - 薄膜トランジスタ及び表示装置 - Google Patents

薄膜トランジスタ及び表示装置 Download PDF

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Publication number
JP5411528B2
JP5411528B2 JP2009042436A JP2009042436A JP5411528B2 JP 5411528 B2 JP5411528 B2 JP 5411528B2 JP 2009042436 A JP2009042436 A JP 2009042436A JP 2009042436 A JP2009042436 A JP 2009042436A JP 5411528 B2 JP5411528 B2 JP 5411528B2
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Japan
Prior art keywords
semiconductor layer
layer
microcrystalline semiconductor
thin film
film transistor
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Expired - Fee Related
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JP2009042436A
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Japanese (ja)
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JP2009260277A (ja
JP2009260277A5 (enExample
Inventor
舜平 山崎
義元 黒川
宏充 郷戸
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009042436A priority Critical patent/JP5411528B2/ja
Publication of JP2009260277A publication Critical patent/JP2009260277A/ja
Publication of JP2009260277A5 publication Critical patent/JP2009260277A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Thin Film Transistor (AREA)
JP2009042436A 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置 Expired - Fee Related JP5411528B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009042436A JP5411528B2 (ja) 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008070465 2008-03-18
JP2008070465 2008-03-18
JP2009042436A JP5411528B2 (ja) 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置

Publications (3)

Publication Number Publication Date
JP2009260277A JP2009260277A (ja) 2009-11-05
JP2009260277A5 JP2009260277A5 (enExample) 2012-04-05
JP5411528B2 true JP5411528B2 (ja) 2014-02-12

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Family Applications (1)

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JP2009042436A Expired - Fee Related JP5411528B2 (ja) 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置

Country Status (4)

Country Link
US (1) US8624321B2 (enExample)
JP (1) JP5411528B2 (enExample)
CN (1) CN101540342B (enExample)
TW (1) TWI492386B (enExample)

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JP2010211086A (ja) * 2009-03-12 2010-09-24 Hitachi Displays Ltd 液晶表示装置
KR101582946B1 (ko) * 2009-12-04 2016-01-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101840622B1 (ko) 2009-12-21 2018-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
KR20130041711A (ko) * 2010-05-11 2013-04-25 파나소닉 액정 디스플레이 주식회사 표시 장치용 박막 반도체 장치 및 그 제조 방법
US8440548B2 (en) * 2010-08-06 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor
US8405085B2 (en) * 2010-12-01 2013-03-26 Au Optronics Corporation Thin film transistor capable of reducing photo current leakage
US9401396B2 (en) * 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
KR101849268B1 (ko) 2011-05-13 2018-04-18 한국전자통신연구원 빛과 전압 스트레스에 강한 산화물 박막 트랜지스터 및 그의 제조 방법
JP2013016611A (ja) * 2011-07-04 2013-01-24 Sony Corp 半導体装置及びその製造方法、並びに、画像表示装置の製造方法
CN103081078A (zh) 2011-07-05 2013-05-01 松下电器产业株式会社 薄膜晶体管及其制造方法以及显示装置
CN103107202B (zh) * 2013-01-23 2016-04-27 深圳市华星光电技术有限公司 一种薄膜晶体管结构、液晶显示装置和一种制造方法
US8912542B2 (en) * 2013-01-23 2014-12-16 Shenzhen China Star Optoelectronics Technology Co., Ltd. TFT structure and LCD device
KR102130139B1 (ko) 2013-07-30 2020-07-03 엘지디스플레이 주식회사 산화물 반도체를 이용한 박막 트랜지스터 기판을 포함하는 유기발광 다이오드 표시장치 및 그 제조 방법
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN104752514B (zh) * 2013-12-26 2018-05-25 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管及其制备方法和应用
WO2017042941A1 (ja) * 2015-09-10 2017-03-16 堺ディスプレイプロダクト株式会社 表示装置及び表示装置の製造方法
CN110870078A (zh) * 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
CN111052322B (zh) * 2017-09-01 2023-04-14 三菱电机株式会社 场效应晶体管
TWI648844B (zh) 2017-11-06 2019-01-21 Industrial Technology Research Institute 薄膜電晶體及其製造方法
CN113345966A (zh) * 2020-02-18 2021-09-03 堺显示器制品株式会社 薄膜晶体管及其制造方法
CN112331722B (zh) * 2020-11-05 2024-05-28 北海惠科光电技术有限公司 薄膜晶体管及其阈值电压的调整方法、显示装置及介质
CN114864735B (zh) * 2022-05-11 2024-03-15 中南大学 基于飞秒激光的光电晶体管制备方法及晶体管阵列

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Also Published As

Publication number Publication date
JP2009260277A (ja) 2009-11-05
CN101540342B (zh) 2015-05-20
US8624321B2 (en) 2014-01-07
CN101540342A (zh) 2009-09-23
US20090236600A1 (en) 2009-09-24
TWI492386B (zh) 2015-07-11
TW201003922A (en) 2010-01-16

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