JP2009260277A5 - - Google Patents

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Publication number
JP2009260277A5
JP2009260277A5 JP2009042436A JP2009042436A JP2009260277A5 JP 2009260277 A5 JP2009260277 A5 JP 2009260277A5 JP 2009042436 A JP2009042436 A JP 2009042436A JP 2009042436 A JP2009042436 A JP 2009042436A JP 2009260277 A5 JP2009260277 A5 JP 2009260277A5
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JP
Japan
Prior art keywords
semiconductor layer
microcrystalline semiconductor
layer
gate insulating
microcrystalline
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JP2009042436A
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English (en)
Japanese (ja)
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JP5411528B2 (ja
JP2009260277A (ja
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Priority to JP2009042436A priority Critical patent/JP5411528B2/ja
Priority claimed from JP2009042436A external-priority patent/JP5411528B2/ja
Publication of JP2009260277A publication Critical patent/JP2009260277A/ja
Publication of JP2009260277A5 publication Critical patent/JP2009260277A5/ja
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Publication of JP5411528B2 publication Critical patent/JP5411528B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009042436A 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置 Expired - Fee Related JP5411528B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009042436A JP5411528B2 (ja) 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008070465 2008-03-18
JP2008070465 2008-03-18
JP2009042436A JP5411528B2 (ja) 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置

Publications (3)

Publication Number Publication Date
JP2009260277A JP2009260277A (ja) 2009-11-05
JP2009260277A5 true JP2009260277A5 (enExample) 2012-04-05
JP5411528B2 JP5411528B2 (ja) 2014-02-12

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JP2009042436A Expired - Fee Related JP5411528B2 (ja) 2008-03-18 2009-02-25 薄膜トランジスタ及び表示装置

Country Status (4)

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US (1) US8624321B2 (enExample)
JP (1) JP5411528B2 (enExample)
CN (1) CN101540342B (enExample)
TW (1) TWI492386B (enExample)

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JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN104752514B (zh) * 2013-12-26 2018-05-25 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管及其制备方法和应用
JP6471237B2 (ja) * 2015-09-10 2019-02-13 堺ディスプレイプロダクト株式会社 表示装置及び表示装置の製造方法
CN110870078A (zh) * 2017-07-12 2020-03-06 堺显示器制品株式会社 半导体装置以及其制造方法
US11038031B2 (en) * 2017-09-01 2021-06-15 Mitsubishi Electric Corporation Field-effect transistor
TWI648844B (zh) 2017-11-06 2019-01-21 Industrial Technology Research Institute 薄膜電晶體及其製造方法
US11764308B2 (en) * 2020-02-18 2023-09-19 Sakai Display Products Corporation Thin-film transistor and manufacturing method thereof
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CN114864735B (zh) * 2022-05-11 2024-03-15 中南大学 基于飞秒激光的光电晶体管制备方法及晶体管阵列

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