TWI492386B - 薄膜電晶體及顯示裝置 - Google Patents

薄膜電晶體及顯示裝置 Download PDF

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Publication number
TWI492386B
TWI492386B TW098108064A TW98108064A TWI492386B TW I492386 B TWI492386 B TW I492386B TW 098108064 A TW098108064 A TW 098108064A TW 98108064 A TW98108064 A TW 98108064A TW I492386 B TWI492386 B TW I492386B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
layer
microcrystalline semiconductor
thin film
film transistor
Prior art date
Application number
TW098108064A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003922A (en
Inventor
Shunpei Yamazaki
Yoshiyuki Kurokawa
Hiromichi Godo
Hidekazu Miyairi
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW201003922A publication Critical patent/TW201003922A/zh
Application granted granted Critical
Publication of TWI492386B publication Critical patent/TWI492386B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Thin Film Transistor (AREA)
TW098108064A 2008-03-18 2009-03-12 薄膜電晶體及顯示裝置 TWI492386B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008070465 2008-03-18

Publications (2)

Publication Number Publication Date
TW201003922A TW201003922A (en) 2010-01-16
TWI492386B true TWI492386B (zh) 2015-07-11

Family

ID=41087976

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098108064A TWI492386B (zh) 2008-03-18 2009-03-12 薄膜電晶體及顯示裝置

Country Status (4)

Country Link
US (1) US8624321B2 (enExample)
JP (1) JP5411528B2 (enExample)
CN (1) CN101540342B (enExample)
TW (1) TWI492386B (enExample)

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WO2009157573A1 (en) * 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, semiconductor device and electronic device
JP2010211086A (ja) * 2009-03-12 2010-09-24 Hitachi Displays Ltd 液晶表示装置
KR101582946B1 (ko) * 2009-12-04 2016-01-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101840622B1 (ko) 2009-12-21 2018-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
WO2011141954A1 (ja) * 2010-05-11 2011-11-17 パナソニック株式会社 表示装置用薄膜半導体装置及びその製造方法
US8440548B2 (en) * 2010-08-06 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor
US8405085B2 (en) * 2010-12-01 2013-03-26 Au Optronics Corporation Thin film transistor capable of reducing photo current leakage
US9401396B2 (en) 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
KR101849268B1 (ko) 2011-05-13 2018-04-18 한국전자통신연구원 빛과 전압 스트레스에 강한 산화물 박막 트랜지스터 및 그의 제조 방법
JP2013016611A (ja) * 2011-07-04 2013-01-24 Sony Corp 半導体装置及びその製造方法、並びに、画像表示装置の製造方法
CN103081078A (zh) * 2011-07-05 2013-05-01 松下电器产业株式会社 薄膜晶体管及其制造方法以及显示装置
US8912542B2 (en) * 2013-01-23 2014-12-16 Shenzhen China Star Optoelectronics Technology Co., Ltd. TFT structure and LCD device
CN103107202B (zh) * 2013-01-23 2016-04-27 深圳市华星光电技术有限公司 一种薄膜晶体管结构、液晶显示装置和一种制造方法
KR102130139B1 (ko) * 2013-07-30 2020-07-03 엘지디스플레이 주식회사 산화물 반도체를 이용한 박막 트랜지스터 기판을 포함하는 유기발광 다이오드 표시장치 및 그 제조 방법
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN104752514B (zh) * 2013-12-26 2018-05-25 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管及其制备方法和应用
JP6471237B2 (ja) * 2015-09-10 2019-02-13 堺ディスプレイプロダクト株式会社 表示装置及び表示装置の製造方法
WO2019012630A1 (ja) * 2017-07-12 2019-01-17 堺ディスプレイプロダクト株式会社 半導体装置およびその製造方法
JP6809615B2 (ja) * 2017-09-01 2021-01-06 三菱電機株式会社 電界効果トランジスタ
TWI648844B (zh) * 2017-11-06 2019-01-21 Industrial Technology Research Institute 薄膜電晶體及其製造方法
US11764308B2 (en) * 2020-02-18 2023-09-19 Sakai Display Products Corporation Thin-film transistor and manufacturing method thereof
CN112331722B (zh) * 2020-11-05 2024-05-28 北海惠科光电技术有限公司 薄膜晶体管及其阈值电压的调整方法、显示装置及介质
CN114864735B (zh) * 2022-05-11 2024-03-15 中南大学 基于飞秒激光的光电晶体管制备方法及晶体管阵列

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Also Published As

Publication number Publication date
CN101540342A (zh) 2009-09-23
US20090236600A1 (en) 2009-09-24
JP5411528B2 (ja) 2014-02-12
US8624321B2 (en) 2014-01-07
CN101540342B (zh) 2015-05-20
JP2009260277A (ja) 2009-11-05
TW201003922A (en) 2010-01-16

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