CN101540342B - 薄膜晶体管及显示装置 - Google Patents

薄膜晶体管及显示装置 Download PDF

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Publication number
CN101540342B
CN101540342B CN200910128138.9A CN200910128138A CN101540342B CN 101540342 B CN101540342 B CN 101540342B CN 200910128138 A CN200910128138 A CN 200910128138A CN 101540342 B CN101540342 B CN 101540342B
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China
Prior art keywords
semiconductor layer
microcrystalline semiconductor
layer
film transistor
thin film
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Expired - Fee Related
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CN200910128138.9A
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English (en)
Chinese (zh)
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CN101540342A (zh
Inventor
山崎舜平
黑川义元
乡户宏充
宫入秀和
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
CN200910128138.9A 2008-03-18 2009-03-04 薄膜晶体管及显示装置 Expired - Fee Related CN101540342B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008070465 2008-03-18
JP2008070465 2008-03-18
JP2008-070465 2008-03-18

Publications (2)

Publication Number Publication Date
CN101540342A CN101540342A (zh) 2009-09-23
CN101540342B true CN101540342B (zh) 2015-05-20

Family

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Family Applications (1)

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CN200910128138.9A Expired - Fee Related CN101540342B (zh) 2008-03-18 2009-03-04 薄膜晶体管及显示装置

Country Status (4)

Country Link
US (1) US8624321B2 (enExample)
JP (1) JP5411528B2 (enExample)
CN (1) CN101540342B (enExample)
TW (1) TWI492386B (enExample)

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JP2010211086A (ja) * 2009-03-12 2010-09-24 Hitachi Displays Ltd 液晶表示装置
KR101582946B1 (ko) * 2009-12-04 2016-01-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101840622B1 (ko) 2009-12-21 2018-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
CN102405527A (zh) * 2010-05-11 2012-04-04 松下电器产业株式会社 显示装置用薄膜半导体器件及其制造方法
US8440548B2 (en) * 2010-08-06 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor
US8405085B2 (en) * 2010-12-01 2013-03-26 Au Optronics Corporation Thin film transistor capable of reducing photo current leakage
US9401396B2 (en) * 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
KR101849268B1 (ko) 2011-05-13 2018-04-18 한국전자통신연구원 빛과 전압 스트레스에 강한 산화물 박막 트랜지스터 및 그의 제조 방법
JP2013016611A (ja) * 2011-07-04 2013-01-24 Sony Corp 半導体装置及びその製造方法、並びに、画像表示装置の製造方法
CN103081078A (zh) 2011-07-05 2013-05-01 松下电器产业株式会社 薄膜晶体管及其制造方法以及显示装置
US8912542B2 (en) * 2013-01-23 2014-12-16 Shenzhen China Star Optoelectronics Technology Co., Ltd. TFT structure and LCD device
CN103107202B (zh) * 2013-01-23 2016-04-27 深圳市华星光电技术有限公司 一种薄膜晶体管结构、液晶显示装置和一种制造方法
KR102130139B1 (ko) * 2013-07-30 2020-07-03 엘지디스플레이 주식회사 산화물 반도체를 이용한 박막 트랜지스터 기판을 포함하는 유기발광 다이오드 표시장치 및 그 제조 방법
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN104752514B (zh) * 2013-12-26 2018-05-25 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管及其制备方法和应用
WO2017042941A1 (ja) 2015-09-10 2017-03-16 堺ディスプレイプロダクト株式会社 表示装置及び表示装置の製造方法
US11081507B2 (en) * 2017-07-12 2021-08-03 Sakai Display Products Corporation Semiconductor device and method for manufacturing same
DE112017007966T5 (de) * 2017-09-01 2020-06-04 Mitsubishi Electric Corporation Feldeffekttransistor
TWI648844B (zh) * 2017-11-06 2019-01-21 Industrial Technology Research Institute 薄膜電晶體及其製造方法
US11764308B2 (en) * 2020-02-18 2023-09-19 Sakai Display Products Corporation Thin-film transistor and manufacturing method thereof
CN112331722B (zh) * 2020-11-05 2024-05-28 北海惠科光电技术有限公司 薄膜晶体管及其阈值电压的调整方法、显示装置及介质
CN114864735B (zh) * 2022-05-11 2024-03-15 中南大学 基于飞秒激光的光电晶体管制备方法及晶体管阵列

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Also Published As

Publication number Publication date
TWI492386B (zh) 2015-07-11
US20090236600A1 (en) 2009-09-24
JP2009260277A (ja) 2009-11-05
US8624321B2 (en) 2014-01-07
TW201003922A (en) 2010-01-16
JP5411528B2 (ja) 2014-02-12
CN101540342A (zh) 2009-09-23

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