JP5373247B2 - 基板上に歪み材料及び非歪み材料のパターンを形成するための方法、及びこれらのパターンを含む電気デバイス - Google Patents

基板上に歪み材料及び非歪み材料のパターンを形成するための方法、及びこれらのパターンを含む電気デバイス Download PDF

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JP5373247B2
JP5373247B2 JP2005208400A JP2005208400A JP5373247B2 JP 5373247 B2 JP5373247 B2 JP 5373247B2 JP 2005208400 A JP2005208400 A JP 2005208400A JP 2005208400 A JP2005208400 A JP 2005208400A JP 5373247 B2 JP5373247 B2 JP 5373247B2
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layer
strained
substrate
forming
relaxation
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JP2006041516A (ja
JP2006041516A5 (enExample
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カングオ・チェン
ラマチャンドラ・ディヴァカルニ
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
JP2005208400A 2004-07-23 2005-07-19 基板上に歪み材料及び非歪み材料のパターンを形成するための方法、及びこれらのパターンを含む電気デバイス Expired - Lifetime JP5373247B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/710,608 US7384829B2 (en) 2004-07-23 2004-07-23 Patterned strained semiconductor substrate and device
US10/710,608 2004-07-23

Publications (3)

Publication Number Publication Date
JP2006041516A JP2006041516A (ja) 2006-02-09
JP2006041516A5 JP2006041516A5 (enExample) 2008-07-17
JP5373247B2 true JP5373247B2 (ja) 2013-12-18

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US (4) US7384829B2 (enExample)
JP (1) JP5373247B2 (enExample)
CN (1) CN100385615C (enExample)
TW (1) TWI353653B (enExample)

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US20060019462A1 (en) 2006-01-26
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US9053970B2 (en) 2015-06-09
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US7384829B2 (en) 2008-06-10
US7682859B2 (en) 2010-03-23
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