CN100385615C - 图形化应变的半导体衬底和器件 - Google Patents

图形化应变的半导体衬底和器件 Download PDF

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Publication number
CN100385615C
CN100385615C CNB2005100082587A CN200510008258A CN100385615C CN 100385615 C CN100385615 C CN 100385615C CN B2005100082587 A CNB2005100082587 A CN B2005100082587A CN 200510008258 A CN200510008258 A CN 200510008258A CN 100385615 C CN100385615 C CN 100385615C
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China
Prior art keywords
strain gauge
substrate
layer
resilient coating
relaxed layer
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Expired - Lifetime
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CNB2005100082587A
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Chinese (zh)
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CN1725437A (zh
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程慷果
拉马查恩德拉·德瓦卡鲁尼
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
CNB2005100082587A 2004-07-23 2005-02-07 图形化应变的半导体衬底和器件 Expired - Lifetime CN100385615C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/710,608 US7384829B2 (en) 2004-07-23 2004-07-23 Patterned strained semiconductor substrate and device
US10/710,608 2004-07-23

Publications (2)

Publication Number Publication Date
CN1725437A CN1725437A (zh) 2006-01-25
CN100385615C true CN100385615C (zh) 2008-04-30

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US (4) US7384829B2 (enExample)
JP (1) JP5373247B2 (enExample)
CN (1) CN100385615C (enExample)
TW (1) TWI353653B (enExample)

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