JP5357014B2 - サージ電流保護を伴う半導体デバイスとその製造方法 - Google Patents

サージ電流保護を伴う半導体デバイスとその製造方法 Download PDF

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JP5357014B2
JP5357014B2 JP2009509705A JP2009509705A JP5357014B2 JP 5357014 B2 JP5357014 B2 JP 5357014B2 JP 2009509705 A JP2009509705 A JP 2009509705A JP 2009509705 A JP2009509705 A JP 2009509705A JP 5357014 B2 JP5357014 B2 JP 5357014B2
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semiconductor material
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JP2009535853A5 (enExample
JP2009535853A (ja
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イゴール サンキン
ヨゼフ ニール メレット
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エスエス エスシー アイピー、エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Electrodes Of Semiconductors (AREA)
JP2009509705A 2006-05-02 2007-05-01 サージ電流保護を伴う半導体デバイスとその製造方法 Expired - Fee Related JP5357014B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/415,279 US7274083B1 (en) 2006-05-02 2006-05-02 Semiconductor device with surge current protection and method of making the same
US11/415,279 2006-05-02
PCT/US2007/010712 WO2007130505A2 (en) 2006-05-02 2007-05-01 Semiconductor device with surge current protection and method of making the same

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JP2009535853A JP2009535853A (ja) 2009-10-01
JP2009535853A5 JP2009535853A5 (enExample) 2012-11-29
JP5357014B2 true JP5357014B2 (ja) 2013-12-04

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US (2) US7274083B1 (enExample)
EP (1) EP2013911A2 (enExample)
JP (1) JP5357014B2 (enExample)
KR (1) KR101412802B1 (enExample)
CN (2) CN101449385B (enExample)
AU (1) AU2007248544B2 (enExample)
CA (1) CA2650470A1 (enExample)
NZ (1) NZ572020A (enExample)
WO (1) WO2007130505A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US7821015B2 (en) 2006-06-19 2010-10-26 Semisouth Laboratories, Inc. Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
US8193537B2 (en) * 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
JP2009224603A (ja) * 2008-03-17 2009-10-01 Toyota Central R&D Labs Inc ダイオードの製造方法
JP5546759B2 (ja) 2008-08-05 2014-07-09 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5047133B2 (ja) * 2008-11-19 2012-10-10 昭和電工株式会社 半導体装置の製造方法
US8106487B2 (en) * 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
KR101051578B1 (ko) * 2009-09-08 2011-07-22 삼성전기주식회사 반도체 소자 및 그 제조 방법
JP5607720B2 (ja) 2010-02-23 2014-10-15 良孝 菅原 半導体装置
JP5106604B2 (ja) * 2010-09-07 2012-12-26 株式会社東芝 半導体装置およびその製造方法
US20120170163A1 (en) * 2010-12-31 2012-07-05 Adrian Mikolajczak Barrier diode for input power protection
KR101461886B1 (ko) * 2013-09-10 2014-11-13 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP2015149375A (ja) * 2014-02-06 2015-08-20 住友電気工業株式会社 ダイオード
JP2015177071A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置の製造方法
CN103904135B (zh) * 2014-04-18 2018-03-30 苏州捷芯威半导体有限公司 肖特基二极管及其制造方法
JP2017011060A (ja) * 2015-06-19 2017-01-12 住友電気工業株式会社 ショットキーバリアダイオード
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
KR102392244B1 (ko) * 2016-12-15 2022-04-29 그리피스 유니버시티 실리콘 카바이드 쇼트키 다이오드
EP3416184A1 (en) 2017-06-14 2018-12-19 ABB Schweiz AG High power semiconductor device with mesa termination structure and method for manufacturing the same
US10615292B2 (en) * 2018-03-27 2020-04-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. High voltage silicon carbide Schottky diode flip chip array
CN111081758B (zh) * 2019-11-21 2023-06-02 北京绿能芯创电子科技有限公司 降低导通电阻的SiC MPS结构及制备方法
WO2022209778A1 (ja) * 2021-03-29 2022-10-06 京セラ株式会社 半導体素子、半導体装置及び半導体素子の製造方法
CN114759080B (zh) * 2022-06-13 2022-09-09 深圳市时代速信科技有限公司 一种半导体器件及其制备方法
CN117174763B (zh) * 2023-11-03 2024-03-01 山东大学 碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5949713B2 (ja) * 1979-12-25 1984-12-04 日本電信電話株式会社 シヨツトキバリヤダイオ−ド
US4982260A (en) 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
JPH04233281A (ja) * 1990-12-28 1992-08-21 Fuji Electric Co Ltd 半導体装置
US5449925A (en) 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
JPH0897411A (ja) * 1994-09-21 1996-04-12 Fuji Electric Co Ltd 横型高耐圧トレンチｍｏｓｆｅｔおよびその製造方法
SE9700141D0 (sv) 1997-01-20 1997-01-20 Abb Research Ltd A schottky diode of SiC and a method for production thereof
JP3287269B2 (ja) * 1997-06-02 2002-06-04 富士電機株式会社 ダイオードとその製造方法
FR2803103B1 (fr) * 1999-12-24 2003-08-29 St Microelectronics Sa Diode schottky sur substrat de carbure de silicium
DE10004983C1 (de) * 2000-02-04 2001-09-13 Infineon Technologies Ag Schutzanordnung für Schottky-Diode
US6686616B1 (en) * 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
FR2816113A1 (fr) 2000-10-31 2002-05-03 St Microelectronics Sa Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
JP4872158B2 (ja) * 2001-03-05 2012-02-08 住友電気工業株式会社 ショットキーダイオード、ｐｎ接合ダイオード、ｐｉｎ接合ダイオード、および製造方法
US6844251B2 (en) * 2001-03-23 2005-01-18 Krishna Shenai Method of forming a semiconductor device with a junction termination layer
US6524900B2 (en) 2001-07-25 2003-02-25 Abb Research, Ltd Method concerning a junction barrier Schottky diode, such a diode and use thereof
US6693308B2 (en) * 2002-02-22 2004-02-17 Semisouth Laboratories, Llc Power SiC devices having raised guard rings
US6815304B2 (en) * 2002-02-22 2004-11-09 Semisouth Laboratories, Llc Silicon carbide bipolar junction transistor with overgrown base region
US7095050B2 (en) * 2002-02-28 2006-08-22 Midwest Research Institute Voltage-matched, monolithic, multi-band-gap devices
US6683334B2 (en) * 2002-03-12 2004-01-27 Microsemi Corporation Compound semiconductor protection device for low voltage and high speed data lines
DE10259373B4 (de) 2002-12-18 2012-03-22 Infineon Technologies Ag Überstromfeste Schottkydiode mit niedrigem Sperrstrom
US6955932B2 (en) * 2003-10-29 2005-10-18 International Business Machines Corporation Single and double-gate pseudo-FET devices for semiconductor materials evaluation
CN100524790C (zh) * 2004-02-02 2009-08-05 三垦电气株式会社 半导体发光元件与保护元件的复合半导体装置
US7470967B2 (en) * 2004-03-12 2008-12-30 Semisouth Laboratories, Inc. Self-aligned silicon carbide semiconductor devices and methods of making the same
CN100565908C (zh) * 2004-07-08 2009-12-02 半南实验室公司 由碳化硅制造的单片垂直结场效应晶体管和肖特基势垒二极管及其制造方法
US7202528B2 (en) * 2004-12-01 2007-04-10 Semisouth Laboratories, Inc. Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
JP3914226B2 (ja) * 2004-09-29 2007-05-16 株式会社東芝 高耐圧半導体装置
US7119380B2 (en) * 2004-12-01 2006-10-10 Semisouth Laboratories, Inc. Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
WO2006137711A1 (en) * 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
DE112006002927B4 (de) * 2006-01-09 2010-06-02 Seoul Opto Device Co. Ltd., Ansan Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen
US9455356B2 (en) * 2006-02-28 2016-09-27 Cree, Inc. High power silicon carbide (SiC) PiN diodes having low forward voltage drops
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US8269262B2 (en) * 2006-05-02 2012-09-18 Ss Sc Ip Llc Vertical junction field effect transistor with mesa termination and method of making the same
JP2007305708A (ja) * 2006-05-10 2007-11-22 Rohm Co Ltd 半導体発光素子アレイおよびこれを用いた照明用器具

Also Published As

Publication number Publication date
KR101412802B1 (ko) 2014-06-27
US20080160685A1 (en) 2008-07-03
CA2650470A1 (en) 2007-11-15
NZ572020A (en) 2011-09-30
WO2007130505A3 (en) 2008-12-24
KR20090017561A (ko) 2009-02-18
JP2009535853A (ja) 2009-10-01
WO2007130505A2 (en) 2007-11-15
CN101449385A (zh) 2009-06-03
EP2013911A2 (en) 2009-01-14
CN101449385B (zh) 2012-02-08
AU2007248544B2 (en) 2013-07-18
CN102522432A (zh) 2012-06-27
US7960198B2 (en) 2011-06-14
US7274083B1 (en) 2007-09-25
AU2007248544A1 (en) 2007-11-15

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