JP5357014B2 - サージ電流保護を伴う半導体デバイスとその製造方法 - Google Patents

サージ電流保護を伴う半導体デバイスとその製造方法 Download PDF

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JP5357014B2
JP5357014B2 JP2009509705A JP2009509705A JP5357014B2 JP 5357014 B2 JP5357014 B2 JP 5357014B2 JP 2009509705 A JP2009509705 A JP 2009509705A JP 2009509705 A JP2009509705 A JP 2009509705A JP 5357014 B2 JP5357014 B2 JP 5357014B2
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semiconductor material
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sic semiconductor
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JP2009535853A5 (enExample
JP2009535853A (ja
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イゴール サンキン
ヨゼフ ニール メレット
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エスエス エスシー アイピー、エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Electrodes Of Semiconductors (AREA)
JP2009509705A 2006-05-02 2007-05-01 サージ電流保護を伴う半導体デバイスとその製造方法 Expired - Fee Related JP5357014B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/415,279 US7274083B1 (en) 2006-05-02 2006-05-02 Semiconductor device with surge current protection and method of making the same
US11/415,279 2006-05-02
PCT/US2007/010712 WO2007130505A2 (en) 2006-05-02 2007-05-01 Semiconductor device with surge current protection and method of making the same

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JP2009535853A JP2009535853A (ja) 2009-10-01
JP2009535853A5 JP2009535853A5 (enExample) 2012-11-29
JP5357014B2 true JP5357014B2 (ja) 2013-12-04

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US (2) US7274083B1 (enExample)
EP (1) EP2013911A2 (enExample)
JP (1) JP5357014B2 (enExample)
KR (1) KR101412802B1 (enExample)
CN (2) CN101449385B (enExample)
AU (1) AU2007248544B2 (enExample)
CA (1) CA2650470A1 (enExample)
NZ (1) NZ572020A (enExample)
WO (1) WO2007130505A2 (enExample)

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JP2009224603A (ja) * 2008-03-17 2009-10-01 Toyota Central R&D Labs Inc ダイオードの製造方法
JP5546759B2 (ja) * 2008-08-05 2014-07-09 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5047133B2 (ja) * 2008-11-19 2012-10-10 昭和電工株式会社 半導体装置の製造方法
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
KR101051578B1 (ko) * 2009-09-08 2011-07-22 삼성전기주식회사 반도체 소자 및 그 제조 방법
CN102754213B (zh) * 2010-02-23 2015-08-05 菅原良孝 半导体装置
JP5106604B2 (ja) 2010-09-07 2012-12-26 株式会社東芝 半導体装置およびその製造方法
US20120170163A1 (en) * 2010-12-31 2012-07-05 Adrian Mikolajczak Barrier diode for input power protection
KR101461886B1 (ko) * 2013-09-10 2014-11-13 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP2015149375A (ja) * 2014-02-06 2015-08-20 住友電気工業株式会社 ダイオード
JP2015177071A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置の製造方法
CN103904135B (zh) * 2014-04-18 2018-03-30 苏州捷芯威半导体有限公司 肖特基二极管及其制造方法
JP2017011060A (ja) * 2015-06-19 2017-01-12 住友電気工業株式会社 ショットキーバリアダイオード
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
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EP3416184A1 (en) 2017-06-14 2018-12-19 ABB Schweiz AG High power semiconductor device with mesa termination structure and method for manufacturing the same
US10615292B2 (en) * 2018-03-27 2020-04-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. High voltage silicon carbide Schottky diode flip chip array
CN111081758B (zh) * 2019-11-21 2023-06-02 北京绿能芯创电子科技有限公司 降低导通电阻的SiC MPS结构及制备方法
WO2022209778A1 (ja) * 2021-03-29 2022-10-06 京セラ株式会社 半導体素子、半導体装置及び半導体素子の製造方法
CN114759080B (zh) * 2022-06-13 2022-09-09 深圳市时代速信科技有限公司 一种半导体器件及其制备方法
CN117174763B (zh) * 2023-11-03 2024-03-01 山东大学 碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法

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Publication number Publication date
US7960198B2 (en) 2011-06-14
KR101412802B1 (ko) 2014-06-27
US20080160685A1 (en) 2008-07-03
WO2007130505A3 (en) 2008-12-24
AU2007248544B2 (en) 2013-07-18
WO2007130505A2 (en) 2007-11-15
NZ572020A (en) 2011-09-30
KR20090017561A (ko) 2009-02-18
EP2013911A2 (en) 2009-01-14
CN102522432A (zh) 2012-06-27
CA2650470A1 (en) 2007-11-15
CN101449385A (zh) 2009-06-03
CN101449385B (zh) 2012-02-08
AU2007248544A1 (en) 2007-11-15
US7274083B1 (en) 2007-09-25
JP2009535853A (ja) 2009-10-01

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