CA2650470A1 - Semiconductor device with surge current protection and method of making the same - Google Patents

Semiconductor device with surge current protection and method of making the same Download PDF

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Publication number
CA2650470A1
CA2650470A1 CA002650470A CA2650470A CA2650470A1 CA 2650470 A1 CA2650470 A1 CA 2650470A1 CA 002650470 A CA002650470 A CA 002650470A CA 2650470 A CA2650470 A CA 2650470A CA 2650470 A1 CA2650470 A1 CA 2650470A1
Authority
CA
Canada
Prior art keywords
type sic
semiconductor material
sic semiconductor
type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002650470A
Other languages
English (en)
French (fr)
Inventor
Igor Sankin
Joseph Neil Merrett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2650470A1 publication Critical patent/CA2650470A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Electrodes Of Semiconductors (AREA)
CA002650470A 2006-05-02 2007-05-01 Semiconductor device with surge current protection and method of making the same Abandoned CA2650470A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/415,279 US7274083B1 (en) 2006-05-02 2006-05-02 Semiconductor device with surge current protection and method of making the same
US11/415,279 2006-05-02
PCT/US2007/010712 WO2007130505A2 (en) 2006-05-02 2007-05-01 Semiconductor device with surge current protection and method of making the same

Publications (1)

Publication Number Publication Date
CA2650470A1 true CA2650470A1 (en) 2007-11-15

Family

ID=38519988

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002650470A Abandoned CA2650470A1 (en) 2006-05-02 2007-05-01 Semiconductor device with surge current protection and method of making the same

Country Status (9)

Country Link
US (2) US7274083B1 (enExample)
EP (1) EP2013911A2 (enExample)
JP (1) JP5357014B2 (enExample)
KR (1) KR101412802B1 (enExample)
CN (2) CN101449385B (enExample)
AU (1) AU2007248544B2 (enExample)
CA (1) CA2650470A1 (enExample)
NZ (1) NZ572020A (enExample)
WO (1) WO2007130505A2 (enExample)

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US8193537B2 (en) 2006-06-19 2012-06-05 Ss Sc Ip, Llc Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
JP2009224603A (ja) * 2008-03-17 2009-10-01 Toyota Central R&D Labs Inc ダイオードの製造方法
JP5546759B2 (ja) * 2008-08-05 2014-07-09 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5047133B2 (ja) * 2008-11-19 2012-10-10 昭和電工株式会社 半導体装置の製造方法
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
KR101051578B1 (ko) * 2009-09-08 2011-07-22 삼성전기주식회사 반도체 소자 및 그 제조 방법
CN102754213B (zh) * 2010-02-23 2015-08-05 菅原良孝 半导体装置
JP5106604B2 (ja) 2010-09-07 2012-12-26 株式会社東芝 半導体装置およびその製造方法
US20120170163A1 (en) * 2010-12-31 2012-07-05 Adrian Mikolajczak Barrier diode for input power protection
KR101461886B1 (ko) * 2013-09-10 2014-11-13 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP2015149375A (ja) * 2014-02-06 2015-08-20 住友電気工業株式会社 ダイオード
JP2015177071A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置の製造方法
CN103904135B (zh) * 2014-04-18 2018-03-30 苏州捷芯威半导体有限公司 肖特基二极管及其制造方法
JP2017011060A (ja) * 2015-06-19 2017-01-12 住友電気工業株式会社 ショットキーバリアダイオード
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
ES2911200T3 (es) * 2016-12-15 2022-05-18 Univ Griffith Diodos de Schottky de carburo de silicio
EP3416184A1 (en) 2017-06-14 2018-12-19 ABB Schweiz AG High power semiconductor device with mesa termination structure and method for manufacturing the same
US10615292B2 (en) * 2018-03-27 2020-04-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. High voltage silicon carbide Schottky diode flip chip array
CN111081758B (zh) * 2019-11-21 2023-06-02 北京绿能芯创电子科技有限公司 降低导通电阻的SiC MPS结构及制备方法
WO2022209778A1 (ja) * 2021-03-29 2022-10-06 京セラ株式会社 半導体素子、半導体装置及び半導体素子の製造方法
CN114759080B (zh) * 2022-06-13 2022-09-09 深圳市时代速信科技有限公司 一种半导体器件及其制备方法
CN117174763B (zh) * 2023-11-03 2024-03-01 山东大学 碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法

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Also Published As

Publication number Publication date
US7960198B2 (en) 2011-06-14
KR101412802B1 (ko) 2014-06-27
JP5357014B2 (ja) 2013-12-04
US20080160685A1 (en) 2008-07-03
WO2007130505A3 (en) 2008-12-24
AU2007248544B2 (en) 2013-07-18
WO2007130505A2 (en) 2007-11-15
NZ572020A (en) 2011-09-30
KR20090017561A (ko) 2009-02-18
EP2013911A2 (en) 2009-01-14
CN102522432A (zh) 2012-06-27
CN101449385A (zh) 2009-06-03
CN101449385B (zh) 2012-02-08
AU2007248544A1 (en) 2007-11-15
US7274083B1 (en) 2007-09-25
JP2009535853A (ja) 2009-10-01

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EEER Examination request
FZDE Discontinued

Effective date: 20150501