JP5353811B2 - 露光装置、露光方法、及びデバイス製造方法 - Google Patents

露光装置、露光方法、及びデバイス製造方法 Download PDF

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Publication number
JP5353811B2
JP5353811B2 JP2010108738A JP2010108738A JP5353811B2 JP 5353811 B2 JP5353811 B2 JP 5353811B2 JP 2010108738 A JP2010108738 A JP 2010108738A JP 2010108738 A JP2010108738 A JP 2010108738A JP 5353811 B2 JP5353811 B2 JP 5353811B2
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Prior art keywords
liquid
substrate
optical system
projection optical
exposure
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Expired - Fee Related
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JP2010108738A
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Japanese (ja)
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JP2010183110A (ja
Inventor
博之 長坂
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2010108738A 2003-05-23 2010-05-10 露光装置、露光方法、及びデバイス製造方法 Expired - Fee Related JP5353811B2 (ja)

Priority Applications (1)

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JP2010108738A JP5353811B2 (ja) 2003-05-23 2010-05-10 露光装置、露光方法、及びデバイス製造方法

Applications Claiming Priority (3)

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JP2003146424 2003-05-23
JP2003146424 2003-05-23
JP2010108738A JP5353811B2 (ja) 2003-05-23 2010-05-10 露光装置、露光方法、及びデバイス製造方法

Related Parent Applications (1)

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JP2004151716A Division JP4770129B2 (ja) 2003-05-23 2004-05-21 露光装置、並びにデバイス製造方法

Related Child Applications (1)

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JP2012210090A Division JP5454645B2 (ja) 2003-05-23 2012-09-24 露光装置、並びにデバイス製造方法

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JP2010183110A JP2010183110A (ja) 2010-08-19
JP5353811B2 true JP5353811B2 (ja) 2013-11-27

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JP2010108738A Expired - Fee Related JP5353811B2 (ja) 2003-05-23 2010-05-10 露光装置、露光方法、及びデバイス製造方法
JP2010108698A Expired - Fee Related JP5353810B2 (ja) 2003-05-23 2010-05-10 露光装置、露光方法、並びにデバイス製造方法
JP2012210090A Expired - Fee Related JP5454645B2 (ja) 2003-05-23 2012-09-24 露光装置、並びにデバイス製造方法
JP2013083820A Expired - Lifetime JP5516791B2 (ja) 2003-05-23 2013-04-12 露光装置、露光方法、並びにデバイス製造方法
JP2013242938A Expired - Fee Related JP5751316B2 (ja) 2003-05-23 2013-11-25 露光装置、露光方法、並びにデバイス製造方法
JP2014132785A Expired - Fee Related JP5787008B2 (ja) 2003-05-23 2014-06-27 露光装置、露光方法、並びにデバイス製造方法
JP2015007528A Expired - Fee Related JP5831652B2 (ja) 2003-05-23 2015-01-19 露光装置、露光方法、並びにデバイス製造方法
JP2015120109A Expired - Fee Related JP6065943B2 (ja) 2003-05-23 2015-06-15 露光装置、露光方法、並びにデバイス製造方法
JP2016003686A Expired - Fee Related JP6008056B2 (ja) 2003-05-23 2016-01-12 露光装置、露光方法、並びにデバイス製造方法
JP2016217693A Expired - Fee Related JP6195005B2 (ja) 2003-05-23 2016-11-08 露光装置、露光方法、並びにデバイス製造方法

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JP2010108698A Expired - Fee Related JP5353810B2 (ja) 2003-05-23 2010-05-10 露光装置、露光方法、並びにデバイス製造方法
JP2012210090A Expired - Fee Related JP5454645B2 (ja) 2003-05-23 2012-09-24 露光装置、並びにデバイス製造方法
JP2013083820A Expired - Lifetime JP5516791B2 (ja) 2003-05-23 2013-04-12 露光装置、露光方法、並びにデバイス製造方法
JP2013242938A Expired - Fee Related JP5751316B2 (ja) 2003-05-23 2013-11-25 露光装置、露光方法、並びにデバイス製造方法
JP2014132785A Expired - Fee Related JP5787008B2 (ja) 2003-05-23 2014-06-27 露光装置、露光方法、並びにデバイス製造方法
JP2015007528A Expired - Fee Related JP5831652B2 (ja) 2003-05-23 2015-01-19 露光装置、露光方法、並びにデバイス製造方法
JP2015120109A Expired - Fee Related JP6065943B2 (ja) 2003-05-23 2015-06-15 露光装置、露光方法、並びにデバイス製造方法
JP2016003686A Expired - Fee Related JP6008056B2 (ja) 2003-05-23 2016-01-12 露光装置、露光方法、並びにデバイス製造方法
JP2016217693A Expired - Fee Related JP6195005B2 (ja) 2003-05-23 2016-11-08 露光装置、露光方法、並びにデバイス製造方法

Country Status (7)

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US (9) US7495744B2 (OSRAM)
EP (6) EP2816411B1 (OSRAM)
JP (10) JP5353811B2 (OSRAM)
KR (12) KR101711352B1 (OSRAM)
HK (3) HK1205282A1 (OSRAM)
TW (9) TW201515064A (OSRAM)
WO (1) WO2004105106A1 (OSRAM)

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