JP5342694B2 - セラミックヒータ素子、セラミックヒータ、およびグロープラグ - Google Patents
セラミックヒータ素子、セラミックヒータ、およびグロープラグ Download PDFInfo
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- JP5342694B2 JP5342694B2 JP2012511080A JP2012511080A JP5342694B2 JP 5342694 B2 JP5342694 B2 JP 5342694B2 JP 2012511080 A JP2012511080 A JP 2012511080A JP 2012511080 A JP2012511080 A JP 2012511080A JP 5342694 B2 JP5342694 B2 JP 5342694B2
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- sialon
- ceramic heater
- heater element
- heating resistor
- insulating substrate
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- 239000000919 ceramic Substances 0.000 title claims abstract description 54
- 238000010438 heat treatment Methods 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 37
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 27
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 8
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- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 229910052727 yttrium Inorganic materials 0.000 claims description 16
- 229910052691 Erbium Inorganic materials 0.000 claims description 15
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 15
- 150000001247 metal acetylides Chemical class 0.000 claims description 12
- -1 and carbide of Mo Chemical compound 0.000 abstract description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052692 Dysprosium Inorganic materials 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 9
- 229910052706 scandium Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910052684 Cerium Inorganic materials 0.000 description 6
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- 239000011230 binding agent Substances 0.000 description 6
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- 229910004298 SiO 2 Inorganic materials 0.000 description 4
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- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- 229910019974 CrSi Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23Q—IGNITION; EXTINGUISHING-DEVICES
- F23Q7/00—Incandescent ignition; Igniters using electrically-produced heat, e.g. lighters for cigarettes; Electrically-heated glowing plugs
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
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- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
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- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
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Description
図1は、本発明のセラミックヒータ素子(以下、単にヒータ素子という)を有するグロープラグの一例を示したものである。ここで、図1(a)は、グロープラグ全体の縦断面図であり、図1(b)は、そのセラミックヒータ素子部分の断面図である。
絶縁基体101は、上記したように、β−サイアロンまたはβ−サイアロンとα−サイアロンとの混相サイアロンを主相とするものである。なお、主相とは、構成相中、最も質量の多い相を意味する。一方、発熱抵抗体102もまた、同様のサイアロンを有して構成される。
図2は、焼成によりヒータ素子10となる素子成形体10aを示す分解斜視図である。素子成形体10aは、焼成により発熱抵抗体102となる抵抗体成形部102aと、焼成により絶縁基体101となる絶縁基体成形部101aとを有する。
導電性化合物粉末として、WC、WSi2、MoSi2、およびTiNから選ばれる1種または2種、サイアロン構成粉末として、Si3N4、Al2O3、およびAlN、焼結助剤として、Y2O3、La2O3、Er2O3、およびYb2O3から選ばれる1種または2種、その他にSiO2をそれぞれ平均粒径0.5〜1μmとして配合し、ボールミルで24時間湿式混合した。なお、それぞれの原料粉末の組成は、表1に示すように導電性化合物の体積分率が24〜28体積%となるように調整している。
上記実施例における製造方法と基本的に同様の製造方法により、表3に示すような絶縁基体のα率が異なるヒータ素子を製造した。α率の調整は、原料粉末の組成および焼成条件の調整により行った。なお、実施例24は実施例1と同一であり、実施例26は実施例6と同一であり、参考例3は参考例1と同一である。
2…セラミックヒータ
3…主体金具
10…セラミックヒータ素子(10a…素子成形体)
11…金属外筒
101…絶縁基体(101a…絶縁基体成形部)
102…発熱抵抗体(102a…抵抗体成形部)
Claims (6)
- 絶縁基体と、前記絶縁基体に埋設される発熱抵抗体とを有するセラミックヒータ素子であって、
前記絶縁基体は、β−サイアロンまたはβ−サイアロンとα−サイアロンとの混相サイアロンを主相とし、希土類元素を含有する粒界相と、Cr、W、Mo、V、およびFeの中から選ばれる少なくとも1種の珪化物とを有し、
前記発熱抵抗体は、Moの珪化物、窒化物、および炭化物、ならびにWの珪化物、窒化物、および炭化物の中から選ばれる少なくとも1種からなる導電性化合物を主相とし、β−サイアロンまたはβ−サイアロンとα−サイアロンとの混相サイアロンと、希土類元素を含有する粒界相とを有し、
前記絶縁基体および前記発熱抵抗体のサイアロン相におけるα率は50%以下であることを特徴とするセラミックヒータ素子。 - 前記絶縁基体のサイアロン相におけるα率は2%以上30%以下であることを特徴とする請求項1記載のセラミックヒータ素子。
- 前記絶縁基体および前記発熱抵抗体のβ−サイアロンのZ値は0を超え1以下であることを特徴とする請求項1または2記載のセラミックヒータ素子。
- 前記絶縁基体に含まれる希土類元素は、Y、Er、およびYbから選ばれる少なくとも1種を含み、前記発熱抵抗体に含まれる希土類元素は、Y、Er、およびYbから選ばれる少なくとも1種を含むことを特徴とする請求項1乃至3のいずれか1項記載のセラミックヒータ素子。
- セラミックヒータ素子と、前記セラミックヒータ素子を先端部が突出するように内部に保持する金属外筒とを有するセラミックヒータであって、
前記セラミックヒータ素子が請求項1乃至4のいずれか1項記載のセラミックヒータ素子であることを特徴とするセラミックヒータ。 - セラミックヒータと、前記セラミックヒータの後端部を内部に保持する筒状の主体金具とを備えるグロープラグであって、
前記セラミックヒータが請求項5記載のセラミックヒータであることを特徴とするグロープラグ。
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JP6335539B2 (ja) * | 2014-02-14 | 2018-05-30 | 日本特殊陶業株式会社 | セラミックヒータ素子、セラミックヒータおよびグロープラグ |
JP6360341B2 (ja) * | 2014-04-01 | 2018-07-18 | 日本特殊陶業株式会社 | セラミックヒータ |
FR3021095B1 (fr) * | 2014-05-13 | 2016-06-10 | Bosch Gmbh Robert | Electrode de prechauffage et son procede de fabrication |
US10514017B2 (en) | 2017-03-21 | 2019-12-24 | Pratt & Whitney Canada Corp. | Internal combustion engine with igniter cooling sleeve |
RU188873U1 (ru) * | 2018-12-19 | 2019-04-25 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Устройство для электроимпульсного прессования порошковых материалов |
RU196265U1 (ru) * | 2019-12-06 | 2020-02-21 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) | Устройство для электроимпульсного прессования порошковых материалов |
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US9247585B2 (en) | 2016-01-26 |
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