JP5294862B2 - 繰返し可能な熱処理方法および機器 - Google Patents

繰返し可能な熱処理方法および機器 Download PDF

Info

Publication number
JP5294862B2
JP5294862B2 JP2008530288A JP2008530288A JP5294862B2 JP 5294862 B2 JP5294862 B2 JP 5294862B2 JP 2008530288 A JP2008530288 A JP 2008530288A JP 2008530288 A JP2008530288 A JP 2008530288A JP 5294862 B2 JP5294862 B2 JP 5294862B2
Authority
JP
Japan
Prior art keywords
flash
workpiece
radiant
temperature
processor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008530288A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009508337A (ja
JP2009508337A5 (enExample
Inventor
カム、デーヴィッド、マルコム
デッツ、セルジー
マクドネル、ケヴィン
スチュアート、グレッグ
トラム、ティルマン
ルーディック、イゴール
カルドジェルシック、リュボミール
Original Assignee
マトソン テクノロジー、インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by マトソン テクノロジー、インコーポレイテッド filed Critical マトソン テクノロジー、インコーポレイテッド
Publication of JP2009508337A publication Critical patent/JP2009508337A/ja
Publication of JP2009508337A5 publication Critical patent/JP2009508337A5/ja
Application granted granted Critical
Publication of JP5294862B2 publication Critical patent/JP5294862B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016Chamber type furnaces
    • F27B17/0025Chamber type furnaces specially adapted for treating semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Radiation Pyrometers (AREA)
JP2008530288A 2005-09-14 2006-09-14 繰返し可能な熱処理方法および機器 Active JP5294862B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71648805P 2005-09-14 2005-09-14
US60/716,488 2005-09-14
PCT/CA2006/001518 WO2007030941A1 (en) 2005-09-14 2006-09-14 Repeatable heat-treating methods and apparatus

Publications (3)

Publication Number Publication Date
JP2009508337A JP2009508337A (ja) 2009-02-26
JP2009508337A5 JP2009508337A5 (enExample) 2009-11-05
JP5294862B2 true JP5294862B2 (ja) 2013-09-18

Family

ID=37864598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008530288A Active JP5294862B2 (ja) 2005-09-14 2006-09-14 繰返し可能な熱処理方法および機器

Country Status (4)

Country Link
US (1) US9482468B2 (enExample)
JP (1) JP5294862B2 (enExample)
CN (1) CN101288035B (enExample)
WO (1) WO2007030941A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
CN101324470B (zh) 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
WO2007030941A1 (en) 2005-09-14 2007-03-22 Mattson Technology Canada, Inc. Repeatable heat-treating methods and apparatus
JP2007168067A (ja) * 2005-12-21 2007-07-05 Abb As 産業用ロボットのためのコントロール・システム及びティーチ・ペンダント
WO2008058397A1 (en) * 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
JP5214153B2 (ja) * 2007-02-09 2013-06-19 大日本スクリーン製造株式会社 熱処理装置
JP2010525581A (ja) * 2007-05-01 2010-07-22 マトソン テクノロジー カナダ インコーポレイテッド 照射パルス熱処理方法および装置
JP5199620B2 (ja) * 2007-08-17 2013-05-15 大日本スクリーン製造株式会社 熱処理装置
JP5465373B2 (ja) 2007-09-12 2014-04-09 大日本スクリーン製造株式会社 熱処理装置
JP5221099B2 (ja) * 2007-10-17 2013-06-26 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP5280718B2 (ja) * 2008-03-25 2013-09-04 大日本スクリーン製造株式会社 熱処理装置
JP5280717B2 (ja) * 2008-03-25 2013-09-04 大日本スクリーン製造株式会社 熱処理装置
JP5356725B2 (ja) * 2008-05-13 2013-12-04 大日本スクリーン製造株式会社 熱処理装置
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
JP2010238767A (ja) * 2009-03-30 2010-10-21 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
JP5562571B2 (ja) * 2009-03-30 2014-07-30 大日本スクリーン製造株式会社 熱処理装置
JP5562572B2 (ja) * 2009-03-30 2014-07-30 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP5483710B2 (ja) * 2010-03-24 2014-05-07 大日本スクリーン製造株式会社 印加電圧設定方法、熱処理方法および熱処理装置
JP5813291B2 (ja) * 2010-03-24 2015-11-17 株式会社Screenホールディングス 熱処理装置および熱処理方法
JP5646864B2 (ja) * 2010-03-29 2014-12-24 株式会社Screenホールディングス 熱処理方法および熱処理装置
JP2011210965A (ja) * 2010-03-30 2011-10-20 Dainippon Screen Mfg Co Ltd 熱処理方法および熱処理装置
CN102959876A (zh) * 2010-04-08 2013-03-06 Ncc纳诺责任有限公司 用于固化移动基板上的薄膜的装置
JP2012074430A (ja) * 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
US9279727B2 (en) * 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
JP5819633B2 (ja) * 2011-05-13 2015-11-24 株式会社Screenホールディングス 熱処理装置および熱処理方法
JP5855353B2 (ja) * 2011-05-13 2016-02-09 株式会社Screenホールディングス 熱処理装置および熱処理方法
US9449825B2 (en) * 2012-02-03 2016-09-20 SCREEN Holdings Co., Ltd. Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method
JP2014011303A (ja) * 2012-06-29 2014-01-20 Sugawara Laboratories Inc フラッシュランプ瞬間加熱装置
KR20140091203A (ko) * 2013-01-10 2014-07-21 삼성전자주식회사 반도체의 잔류 응력 제거장치 및 잔류 응력 제거방법
JP5847905B2 (ja) * 2014-09-30 2016-01-27 株式会社Screenホールディングス 熱処理方法および熱処理装置
JP6068556B2 (ja) * 2015-05-18 2017-01-25 株式会社Screenホールディングス 熱処理装置および熱処理方法
JP6772258B2 (ja) * 2015-12-30 2020-10-21 マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. ミリ秒アニールシステムのための予熱方法
CN107557871B (zh) * 2016-07-01 2019-10-25 上海微电子装备(集团)股份有限公司 激光退火装置及方法
KR102227883B1 (ko) 2016-12-14 2021-03-16 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 급속 열 활성화 공정과 함께 플라즈마를 이용하는 원자층 에칭 공정
DE112019001415B4 (de) 2018-03-20 2025-07-24 Beijing E-Town Semiconductor Technology, Co., Ltd. Trägerplatte für eine lokale Erwärmung in thermischen Verarbeitungssystemen
JP7017480B2 (ja) * 2018-06-29 2022-02-08 株式会社Screenホールディングス 熱処理方法および熱処理装置
JP6987705B2 (ja) * 2018-06-25 2022-01-05 株式会社Screenホールディングス 熱処理方法および熱処理装置
JP7013337B2 (ja) * 2018-06-29 2022-01-31 株式会社Screenホールディングス 熱処理方法および熱処理装置
US12125723B2 (en) 2018-06-25 2024-10-22 SCREEN Holdings Co., Ltd. Heat treatment method and heat treatment apparatus
CN115461850A (zh) 2020-02-28 2022-12-09 玛特森技术公司 热处理系统中的工件的基于发射的温度测量
CN112432968B (zh) * 2020-10-21 2022-08-30 中国核动力研究设计院 辐照后反应堆结构材料热导率测试样的制备方法及试样盒
JP7773926B2 (ja) * 2022-03-09 2025-11-20 株式会社Screenホールディングス 熱処理装置
CN115963874B (zh) * 2023-01-17 2023-07-21 东莞理工学院 一种温度跟踪控制方法

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2794938A (en) * 1953-03-05 1957-06-04 Philips Corp Low-pressure arc-discharge tube arrangement
FR2264431B1 (enExample) * 1974-03-14 1976-12-17 Comp Generale Electricite
JPS5448414A (en) * 1977-09-26 1979-04-17 Nippon Telegr & Teleph Corp <Ntt> Optical relay unit
US4255046A (en) * 1979-09-19 1981-03-10 Xerox Corporation Variable output power supply for flash unit
US4539431A (en) * 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
JPS60258928A (ja) 1984-02-28 1985-12-20 タマラツク・サイエンテイフイツク・カンパニ−・インコ−ポレ−テツド 半導体ウエ−ハの加熱装置および方法
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
DE3528065A1 (de) * 1984-08-06 1986-02-13 Canon K.K., Tokio/Tokyo Einrichtung zur blitzlichtfotografie
JPS61198735A (ja) 1985-02-28 1986-09-03 Fujitsu Ltd フラツシユランプアニ−ル装置
JPS6215826A (ja) 1985-07-15 1987-01-24 Nec Corp アニ−ル方法
US4789992A (en) * 1985-10-15 1988-12-06 Luxtron Corporation Optical temperature measurement techniques
JPS62112322A (ja) 1985-11-12 1987-05-23 Nippon Kogaku Kk <Nikon> レ−ザアニ−ル装置
JPS63188940A (ja) 1987-01-30 1988-08-04 Nikon Corp 光加熱装置
US5188458A (en) * 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
JP3190653B2 (ja) 1989-05-09 2001-07-23 ソニー株式会社 アニール方法およびアニール装置
JPH0675009B2 (ja) 1990-01-26 1994-09-21 中外炉工業株式会社 物体表面の温度制御方法
JPH05216099A (ja) 1992-01-31 1993-08-27 Canon Inc カメラ及びストロボ装置
JPH064002A (ja) * 1992-06-24 1994-01-14 Fujitsu Ltd 閃光制御装置
JP3228578B2 (ja) * 1992-11-12 2001-11-12 株式会社トプコン 鉛直方向角度自動補償装置
DE4313231A1 (de) * 1993-04-22 1994-10-27 Baasel Carl Lasertech Stromversorgung für eine Laserblitzlampe
JPH07201765A (ja) 1993-12-28 1995-08-04 Sony Corp 熱処理装置および熱処理方法
US5823681A (en) * 1994-08-02 1998-10-20 C.I. Systems (Israel) Ltd. Multipoint temperature monitoring apparatus for semiconductor wafers during processing
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
JP3774485B2 (ja) * 1994-12-07 2006-05-17 キヤノン株式会社 ストロボ装置
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5755511A (en) * 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
WO1997022141A1 (en) 1995-12-14 1997-06-19 Seiko Epson Corporation Method of manufacturing thin film semiconductor device, and thin film semiconductor device
US6391690B2 (en) * 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US5756369A (en) 1996-07-11 1998-05-26 Lsi Logic Corporation Rapid thermal processing using a narrowband infrared source and feedback
JPH1073492A (ja) * 1996-08-30 1998-03-17 Sumitomo Sitix Corp 半導体基板の温度測定方法並びにその処理装置
US5841110A (en) * 1997-08-27 1998-11-24 Steag-Ast Gmbh Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems
US6056434A (en) * 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
JP2000003875A (ja) 1998-06-12 2000-01-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW427884B (en) * 1998-08-27 2001-04-01 Japan Tobacco Inc Tip paper predrying apparatus
US6535628B2 (en) * 1998-10-15 2003-03-18 Applied Materials, Inc. Detection of wafer fragments in a wafer processing apparatus
US6262855B1 (en) * 1998-11-23 2001-07-17 Seh America Infrared laser beam viewing apparatus
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6303411B1 (en) * 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
US6621199B1 (en) * 2000-01-21 2003-09-16 Vortek Industries Ltd. High intensity electromagnetic radiation apparatus and method
JP4346208B2 (ja) 2000-04-21 2009-10-21 東京エレクトロン株式会社 温度測定方法、熱処理装置及び方法、並びに、コンピュータ可読媒体
DE10119047B4 (de) * 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US6970644B2 (en) * 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
EP1227706B1 (en) * 2001-01-24 2012-11-28 City University of Hong Kong Novel circuit designs and control techniques for high frequency electronic ballasts for high intensity discharge lamps
US6462313B1 (en) * 2001-02-20 2002-10-08 Micron Technology, Inc. Method and apparatus to control temperature in an RTP system
US6888319B2 (en) * 2001-03-01 2005-05-03 Palomar Medical Technologies, Inc. Flashlamp drive circuit
JP3696527B2 (ja) * 2001-06-20 2005-09-21 大日本スクリーン製造株式会社 熱処理装置
TWI242815B (en) * 2001-12-13 2005-11-01 Ushio Electric Inc Method for thermal processing semiconductor wafer
JP4029613B2 (ja) 2001-12-25 2008-01-09 ウシオ電機株式会社 閃光放射装置および光加熱装置
CN101324470B (zh) * 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US6998580B2 (en) * 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7223660B2 (en) * 2002-07-31 2007-05-29 Intel Corporation Flash assisted annealing
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
CH696573A5 (de) * 2003-05-05 2007-07-31 Tecan Trading Ag Vorrichtung zum Abgeben von Lichtimpulsen und Systeme mit solchen Vorrichtungen.
JP4675579B2 (ja) * 2003-06-30 2011-04-27 大日本スクリーン製造株式会社 光エネルギー吸収比率の測定方法、光エネルギー吸収比率の測定装置および熱処理装置
US20050018748A1 (en) * 2003-07-24 2005-01-27 Ringermacher Harry Israel Actively quenched lamp, infrared thermography imaging system, and method for actively controlling flash duration
US7186981B2 (en) * 2003-07-29 2007-03-06 Thermal Wave Imaging, Inc. Method and apparatus for thermographic imaging using flash pulse truncation
JP2005079336A (ja) * 2003-08-29 2005-03-24 Toshiba Corp 熱処理装置、熱処理方法及び半導体装置の製造方法
US7318661B2 (en) * 2003-09-12 2008-01-15 Anthony Catalano Universal light emitting illumination device and method
JP4618705B2 (ja) * 2003-09-18 2011-01-26 大日本スクリーン製造株式会社 熱処理装置
WO2005029014A2 (en) 2003-09-24 2005-03-31 T Squared Thermal Technologies, Ltd. Pulse forming network and pulse generator
US6855916B1 (en) * 2003-12-10 2005-02-15 Axcelis Technologies, Inc. Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
JP4265419B2 (ja) * 2004-01-27 2009-05-20 パナソニック株式会社 光ディスク装置および光ディスク装置の記録方法
US7781947B2 (en) * 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
JP2005243797A (ja) 2004-02-25 2005-09-08 Harison Toshiba Lighting Corp 光エネルギー照射装置
US7501332B2 (en) * 2004-04-05 2009-03-10 Kabushiki Kaisha Toshiba Doping method and manufacturing method for a semiconductor device
JP2006294750A (ja) * 2005-04-07 2006-10-26 Toshiba Corp 薄膜堆積装置及び方法
WO2007030941A1 (en) 2005-09-14 2007-03-22 Mattson Technology Canada, Inc. Repeatable heat-treating methods and apparatus
US7184657B1 (en) * 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
US7981212B2 (en) * 2006-03-29 2011-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Flash lamp annealing device
JP2008217882A (ja) * 2007-03-02 2008-09-18 Matsushita Electric Ind Co Ltd 光ピックアップおよび光ディスク装置、コンピュータ、光ディスクプレーヤ、光ディスクレコーダ
KR100914517B1 (ko) * 2007-01-18 2009-09-02 조극래 복사열 조사장치
US20090102083A1 (en) * 2007-06-08 2009-04-23 Cochran Don W Method and System for Wavelength Specific Thermal Irradiation and Treatment
JP5465373B2 (ja) * 2007-09-12 2014-04-09 大日本スクリーン製造株式会社 熱処理装置
JP5221099B2 (ja) * 2007-10-17 2013-06-26 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP4816634B2 (ja) * 2007-12-28 2011-11-16 ウシオ電機株式会社 基板加熱装置及び基板加熱方法
JP5346484B2 (ja) * 2008-04-16 2013-11-20 大日本スクリーン製造株式会社 熱処理方法および熱処理装置
JP5356725B2 (ja) * 2008-05-13 2013-12-04 大日本スクリーン製造株式会社 熱処理装置
US8559799B2 (en) * 2008-11-04 2013-10-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and method for heating substrate by photo-irradiation

Also Published As

Publication number Publication date
CN101288035A (zh) 2008-10-15
US9482468B2 (en) 2016-11-01
CN101288035B (zh) 2013-06-19
JP2009508337A (ja) 2009-02-26
WO2007030941A1 (en) 2007-03-22
US20070069161A1 (en) 2007-03-29

Similar Documents

Publication Publication Date Title
JP5294862B2 (ja) 繰返し可能な熱処理方法および機器
CN101702950B (zh) 辐照脉冲热处理方法和设备
US12476151B2 (en) Preheat processes for millisecond anneal system
JP5133278B2 (ja) 温度測定および熱処理方法およびシステム
TWI566300B (zh) 熱處理方法及熱處理裝置
JP5507227B2 (ja) 熱処理方法および熱処理装置
US20240105474A1 (en) Light irradiation type heat treatment apparatus

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090914

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120619

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120621

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120919

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120926

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121019

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121026

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121119

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121127

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130514

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130611

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5294862

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313114

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250