JP5292066B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP5292066B2
JP5292066B2 JP2008296460A JP2008296460A JP5292066B2 JP 5292066 B2 JP5292066 B2 JP 5292066B2 JP 2008296460 A JP2008296460 A JP 2008296460A JP 2008296460 A JP2008296460 A JP 2008296460A JP 5292066 B2 JP5292066 B2 JP 5292066B2
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Japan
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semiconductor layer
layer
film
region
conductive layer
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JP2008296460A
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Japanese (ja)
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JP2009157354A (ja
JP2009157354A5 (enExample
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邦雄 細谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008296460A priority Critical patent/JP5292066B2/ja
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Publication of JP2009157354A5 publication Critical patent/JP2009157354A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2008296460A 2007-12-05 2008-11-20 表示装置 Active JP5292066B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008296460A JP5292066B2 (ja) 2007-12-05 2008-11-20 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007314123 2007-12-05
JP2007314123 2007-12-05
JP2008296460A JP5292066B2 (ja) 2007-12-05 2008-11-20 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012237398A Division JP2013080228A (ja) 2007-12-05 2012-10-29 表示装置

Publications (3)

Publication Number Publication Date
JP2009157354A JP2009157354A (ja) 2009-07-16
JP2009157354A5 JP2009157354A5 (enExample) 2011-12-15
JP5292066B2 true JP5292066B2 (ja) 2013-09-18

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JP2008296460A Active JP5292066B2 (ja) 2007-12-05 2008-11-20 表示装置
JP2012237398A Withdrawn JP2013080228A (ja) 2007-12-05 2012-10-29 表示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012237398A Withdrawn JP2013080228A (ja) 2007-12-05 2012-10-29 表示装置

Country Status (4)

Country Link
US (2) US8039840B2 (enExample)
JP (2) JP5292066B2 (enExample)
CN (2) CN102683355B (enExample)
TW (2) TWI567466B (enExample)

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CN104992984B (zh) 2009-07-31 2019-08-16 株式会社半导体能源研究所 半导体装置、显示模块及电子装置
TWI529914B (zh) * 2009-08-07 2016-04-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
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JP6033071B2 (ja) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
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Publication number Publication date
CN101452176B (zh) 2012-06-20
US20120032177A1 (en) 2012-02-09
US20090146150A1 (en) 2009-06-11
CN102683355A (zh) 2012-09-19
TWI567466B (zh) 2017-01-21
JP2009157354A (ja) 2009-07-16
TW200947084A (en) 2009-11-16
TW201213993A (en) 2012-04-01
JP2013080228A (ja) 2013-05-02
US8039840B2 (en) 2011-10-18
US8878184B2 (en) 2014-11-04
CN101452176A (zh) 2009-06-10
TWI450008B (zh) 2014-08-21
CN102683355B (zh) 2015-01-28

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