JP5255396B2 - マルチファセット・ゲートmosfetデバイス - Google Patents
マルチファセット・ゲートmosfetデバイス Download PDFInfo
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- JP5255396B2 JP5255396B2 JP2008257859A JP2008257859A JP5255396B2 JP 5255396 B2 JP5255396 B2 JP 5255396B2 JP 2008257859 A JP2008257859 A JP 2008257859A JP 2008257859 A JP2008257859 A JP 2008257859A JP 5255396 B2 JP5255396 B2 JP 5255396B2
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- gate
- strained
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- sige
- insulator
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- 239000012212 insulator Substances 0.000 claims description 82
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 71
- 239000013078 crystal Substances 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 11
- -1 Si: C Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 229910052799 carbon Inorganic materials 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 13
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
501 電流の方向
510 歪みSiまたはSiGe
511 底面ファセット(チャンネル領域)
512 上面ファセット(チャンネル領域)
513 側面ファセット
520 ゲート絶縁物(エピタキシャルSiO2層)
530 ゲート絶縁物(エピタキシャルでないSiO2)
540 ソース/ドレイン
570 Siをベースにしたひずんだ層
590 基板
595 絶縁体
601 MODFETデバイス
610 チャンネル
620 補助層
Claims (7)
- マルチファセット・ゲートMOSFETデバイスであって、
中心部分と2つの端部を備えた、歪みSiベース単結晶ストリップであって、前記中心部分が底面ファセットおよび上面ファセットを含むマルチファセット・チャンネル領域を備え、前記端部がソースとドレインを備える、歪みSiベース単結晶ストリップと、
前記底面ファセットおよび上面ファセットのチャンネル領域の各々を覆うゲート絶縁層と、
前記ゲート絶縁層の各々に接続するゲートと、
前記歪みSiベース単結晶ストリップの前記底面ファセットを覆うゲート絶縁層に接続するゲートと係合する絶縁層を含む支持台とを備え、
前記マルチファセット・チャンネル領域が、少なくとも2つの相対する側面ファセットを有し、前記2つの相対する側面ファセットの各々とゲート絶縁層を介して係合するゲートを備え、
前記ゲートの各々が、対応する前記ゲート絶縁層に接する第1の層を含み、前記第1の層がSi:CまたはSiGe:Cである、マルチファセット・ゲートMOSFETデバイス。 - 前記歪みSiベース単結晶ストリップが、SiGe、Si:C、又はSiGe:Cのいずれかである、請求項1に記載のMOSFETデバイス。
- 前記ソースと前記チャンネル領域が、ショットキ障壁コンタクトを形成している、請求項1に記載のMOSFETデバイス。
- 前記ゲートが、前記マルチファセット・チャンネル領域を完全に囲繞している、請求項1に記載のMOSFETデバイス。
- 前記MOSFETデバイスにおいて、前記支持台が表面を有し、電流が前記支持台の表面に対して平行に流れる、請求項1に記載のMOSFETデバイス。
- マルチファセット・ゲートMOSFETデバイスであって、
中心部分と2つの端部を備えた、歪みSiベース単結晶ストリップであって、前記中心部分が底面ファセットおよび上面ファセットを含むマルチファセット・チャンネル領域を備え、前記端部がソースとドレインを備える、歪みSiベース単結晶ストリップと、
前記上面ファセットのチャンネル領域を覆うゲート絶縁層と、
前記ゲート絶縁層に接続するゲートと、
前記歪みSiベース単結晶ストリップの前記底面ファセットと係合する絶縁層を含む支持台とを備え、
前記マルチファセット・チャンネル領域が、少なくとも2つの相対する側面ファセットを有し、前記2つの相対する側面ファセットの各々とゲート絶縁層を介して係合するゲートを備え、
前記ゲートの各々が、対応する前記ゲート絶縁層に接する第1の層を含み、前記第1の層がSi:CまたはSiGe:Cである、マルチファセット・ゲートMOSFETデバイス。 - マルチファセット・ゲートMOSFETデバイスであって、
中心部分と2つの端部を備えた、歪みSiベース単結晶ストリップであって、前記中心部分がマルチファセット・チャンネル領域を備え、前記端部がソースとドレインを備えるものである歪みSiベース単結晶ストリップと、
前記チャンネル領域を覆うゲート絶縁層と、
前記チャンネル領域の少なくとも2つのファセットの上に重なりかつ前記ゲート絶縁層に接続するゲートと、
前記歪みSiベース単結晶ストリップと係合する支持台とを備え、
前記ゲートが、前記ゲート絶縁物の上面に配置された第1の層を含み、前記第1の層がSi:CまたはSiGe:Cであり、
前記支持台が表面を有し、電流が前記支持台の表面に対して垂直に流れる、マルチファセット・ゲートMOSFETデバイス。
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US10/427,233 US6909186B2 (en) | 2003-05-01 | 2003-05-01 | High performance FET devices and methods therefor |
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-
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Also Published As
Publication number | Publication date |
---|---|
US20050161711A1 (en) | 2005-07-28 |
US7411214B2 (en) | 2008-08-12 |
TW200509395A (en) | 2005-03-01 |
US20080108196A1 (en) | 2008-05-08 |
TWI279914B (en) | 2007-04-21 |
JP2009065177A (ja) | 2009-03-26 |
US20080111156A1 (en) | 2008-05-15 |
US7547930B2 (en) | 2009-06-16 |
US20040217430A1 (en) | 2004-11-04 |
US6909186B2 (en) | 2005-06-21 |
US20050156169A1 (en) | 2005-07-21 |
US7563657B2 (en) | 2009-07-21 |
US20080132021A1 (en) | 2008-06-05 |
US7358122B2 (en) | 2008-04-15 |
JP2004336048A (ja) | 2004-11-25 |
US7510916B2 (en) | 2009-03-31 |
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