JP5244315B2 - 注入又は共注入後のパルスによる薄膜層の自立転写方法 - Google Patents

注入又は共注入後のパルスによる薄膜層の自立転写方法 Download PDF

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Publication number
JP5244315B2
JP5244315B2 JP2006537358A JP2006537358A JP5244315B2 JP 5244315 B2 JP5244315 B2 JP 5244315B2 JP 2006537358 A JP2006537358 A JP 2006537358A JP 2006537358 A JP2006537358 A JP 2006537358A JP 5244315 B2 JP5244315 B2 JP 5244315B2
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source substrate
substrate
species
heat treatment
thin film
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Expired - Lifetime
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Japanese (ja)
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JP2007510298A (ja
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グエン，グエツト−プオン
カイルフルク，イアン
ラガフ−ブランシヤー，クリステル
ブルデル，コンスタンタン
トザン，オレリ
フルネル，フランク
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006537358A 2003-10-28 2004-10-28 注入又は共注入後のパルスによる薄膜層の自立転写方法 Expired - Lifetime JP5244315B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0312621A FR2861497B1 (fr) 2003-10-28 2003-10-28 Procede de transfert catastrophique d'une couche fine apres co-implantation
FR0312621 2003-10-28
PCT/FR2004/002779 WO2005043615A1 (fr) 2003-10-28 2004-10-28 Procede de transfert autoentretenu d'une couche fine par impulsion apres implantation ou co-implantation

Publications (2)

Publication Number Publication Date
JP2007510298A JP2007510298A (ja) 2007-04-19
JP5244315B2 true JP5244315B2 (ja) 2013-07-24

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JP2006537358A Expired - Lifetime JP5244315B2 (ja) 2003-10-28 2004-10-28 注入又は共注入後のパルスによる薄膜層の自立転写方法
JP2006537360A Expired - Lifetime JP5142528B2 (ja) 2003-10-28 2004-10-28 共注入後の薄膜層のカタストロフィ的転写方法

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Application Number Title Priority Date Filing Date
JP2006537360A Expired - Lifetime JP5142528B2 (ja) 2003-10-28 2004-10-28 共注入後の薄膜層のカタストロフィ的転写方法

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Country Link
US (1) US8309431B2 (enExample)
EP (2) EP1678754B1 (enExample)
JP (2) JP5244315B2 (enExample)
KR (2) KR20060122830A (enExample)
CN (2) CN100474557C (enExample)
FR (1) FR2861497B1 (enExample)
TW (1) TWI349303B (enExample)
WO (2) WO2005043615A1 (enExample)

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FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
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KR20060122830A (ko) 2006-11-30
WO2005043616A1 (fr) 2005-05-12
CN100474556C (zh) 2009-04-01
EP1678755A1 (fr) 2006-07-12
JP2007510298A (ja) 2007-04-19
EP1678754B1 (fr) 2015-07-15
KR20070051765A (ko) 2007-05-18
FR2861497B1 (fr) 2006-02-10
EP1678755B1 (fr) 2012-10-17
US8309431B2 (en) 2012-11-13
JP5142528B2 (ja) 2013-02-13
WO2005043615A1 (fr) 2005-05-12
US20070281445A1 (en) 2007-12-06
TWI349303B (en) 2011-09-21
JP2007511069A (ja) 2007-04-26
TW200524010A (en) 2005-07-16
CN100474557C (zh) 2009-04-01
KR101120621B1 (ko) 2012-03-16
CN1864256A (zh) 2006-11-15
EP1678754A1 (fr) 2006-07-12
CN1868053A (zh) 2006-11-22
FR2861497A1 (fr) 2005-04-29

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