Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
  • H10P90/19—Preparing inhomogeneous wafers
  • H10P90/1904—Preparing vertically inhomogeneous wafers
  • H10P90/1906—Preparing SOI wafers
  • H10P90/1914—Preparing SOI wafers using bonding
  • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P30/00—Ion implantation into wafers, substrates or parts of devices
  • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P30/00—Ion implantation into wafers, substrates or parts of devices
  • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
  • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
  • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P30/00—Ion implantation into wafers, substrates or parts of devices
  • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
  • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
  • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
  • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/01—Manufacture or treatment
  • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/10—Isolation regions comprising dielectric materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/10—Isolation regions comprising dielectric materials
  • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Definitions

• the invention relates to a method for transferring an ultra-thin layer (we also speak of a thin or ultra-thin layer) using the self-sustaining propagation of a fracture initiated by an energy pulse. It finds applications in particular in the fields of microelectronics, micro-mechanics, optics and integrated electronics.
• the detachment of a thin layer can be obtained by implantation of chemical species in a source substrate, for example made of silicon, to induce the formation of a zone of defects at a certain depth.
• defects can be micro-bubbles and / or platelets and / or micro-cavities and / or dislocation loops and / or other crystalline defects, locally disturbing the crystalline quality of the material; their nature, density and size depend very much on the implanted species (typically hydrogen) as well as on the nature of the source substrate.
• a heat treatment can then be applied to allow the development of specific defects present in the weakened zone, which makes it possible to obtain the subsequent detachment of the thin layer from the source substrate.
• hetero-structures comprising a superposition of substrates made of different materials
• another technological problem encountered is the presence of a very strong stress field in the various layers in contact, during the heat treatment, due the difference in the coefficients of thermal expansion of the various materials brought into contact.
• This can induce the degradation of heterostructures if the thermal detachment takes place at a temperature higher than a critical temperature.
• This degradation can typically be the breakage of one or two substrates brought into contact and / or the separation of the substrates at the bonding interface. This is why it may be desired to obtain detachment at a lower temperature.
• One way to obtain this type of detachment is to "play" with the conditions of establishment.
• an overdose of the implanted species increases the embrittlement of the implanted area and causes detachment at low temperatures by the contribution of an external force.
• the detachment can also be done by applying, generally following the heat treatment, an external force which causes the fracture in the weakened zone until the detachment of the thin layer.
• This type of mechanical detachment therefore consists in introducing a blade from the edges of the structure and advancing this blade over almost all of the bonded structure, as for "cutting" the edge of the weakened area; we sometimes speak of assisted posting, since the role of the tool (such an ilame) is to propagate the fracture wave from one edge to the other of the structure.
• This type of fracture brings the following defects, at the level of the future surface released by the detachment of the thin layer: - crown defect (non-transferred area, at the periphery of the final product), for example linked to local bonding energy too low compared to the rest of the interface, and the introduction of tools to initiate the transfer, - non-uniformity (roughness at low frequency) of the thickness of the transferred thin layer, in particular due to the wave of fracture assisted mechanically, therefore irregularly, by blows, which then requires treatments, such as polishing, which we nevertheless seek to avoid in general, - difficult industrial deployment, given the use of a tool that accompanies the propagation of the fracture, which involves individual treatment of each structure (or plate).
• the heat treatments envisaged in this article are 450 ° C for 20 min or 750 ° C for 20 s, which necessarily involves the aforementioned drawbacks with regard to detachment at high temperature.
• This hydrogen-helium combination has also been studied, more theoretically, by Cerofolini et al. (2000) [3], who noted that the pressurization of the defects was stronger with the implantation of helium than with that of hydrogen, and that the heat treatment could have different effects depending on the temperature.
• the object of the invention is to overcome the aforementioned drawbacks. More specifically, the subject of the invention is a process for transferring a thin layer which can be carried out at low temperature (in order to limit the high mechanical stresses when using materials having large differences in expansion coefficients), which can be carried out collectively and limiting the faults previously mentioned during the detachment of the thin layer, in particular avoiding jolts of the fracture wave.
• the invention aims to obtain, for a moderate cost, thin layers of high quality, thus avoiding, at the same time, the drawbacks of a heat treatment at high temperature and those linked to the use of '' a tool for assisted detachment, and those linked to an additional treatment to reduce roughness after detachment.
• the invention proposes for this purpose a self-sustained transfer process of a thin layer according to which:
• At least one first species of ion or gas is implanted in this source substrate in a first dose at a given depth with respect to one face of this source substrate, this first species being capable of generating defects
• a heat treatment is applied to this source substrate, at a given temperature for a given time, so as to create, substantially at the given depth, a weakened buried zone, without initiating the thermal detachment of the thin layer,
• a self-maintained detachment is a complete and almost instantaneous detachment, similar to that obtained by a simple heat treatment at high temperature, but caused by a possible tool without it having to follow any wave of fracture (if there is a tool, it therefore comes at most into contact with the substrate and the layer, without skirting the detachment interface); it is therefore, in other words, the opposite of assisted detachment.
• a self-maintained detachment as being a complete and almost instantaneous detachment, similar to that obtained by a simple heat treatment at high temperature, but caused by a possible tool without it having to follow any wave of fracture (if there is a tool, it therefore comes at most into contact with the substrate and the layer, without skirting the detachment interface); it is therefore, in other words, the opposite of assisted detachment.
• the heat treatment temperature is advantageously chosen so as to favor the development of crystalline defects in the weakened zone without inducing spontaneous thermal detachment. This temperature will be low enough not to generate excessive mechanical stresses in the substrate in the event that the source substrate and / or a possible target substrate would include materials having very different coefficients of expansion. This is why the process is a transfer process occurring at a relatively low temperature (no more than 500 ° C. in the case of a hetero structure Silicon / Quartz for example).
• the fracture is obtained by propagation of a self-sustaining fracture wave, after it has been initiated by an energy pulse applied to a fragile area (this pulse can be local or global ).
• this pulse can be local or global .
• implantation conditions dose, energy, nature of the species (or species), current, order of implantations (if there are several) and relative positions in the depth of the substrate of the species implanted (in the case of implantation of several species), implantation temperature, etc.
• adapted treatment for example a heat treatment
• the invention consists in favoring the conditions of embrittlement close, in their nature, to the conditions obtained during the thermal fracture, without however leading them to this point.
• the additional energy is then supplied by impulse complement at the end or during the heat treatment, and induces the propagation of a self-sustained fracture.
• self-sustained propagation of the fracture wave it is understood that it is not necessary to assist the propagation of the wave by advancing a tool or by repeating the initiation energy pulse.
• an important characteristic of the invention is that the fracture wave is propagated over the entire surface of the plate in less than 1 second, or even of the order of a millisecond (speeds greater than 100 m / sec) for diameters up to 'at 300mm.
• a possible origin of the self-sustaining (or catastrophic) fracture comes from the nature of the buried defects.
• the studies carried out (in Germanium, but applicable to Silicon) have shown that under self-sustaining fracture conditions the density of defects (micro-cracks, cavities, platelets, micro and macro bubbles, ...) is estimated between 0.03 and 0.035 per square micron, their sizes are of the order of 7 to 8 square microns, and the area open by these defects relative to the total area of the plate is estimated between 25 and 32%.
• characteristic values of the weakened area may appear similar to the characteristic values observed when the fracture is obtained thermally, but differ from those obtained after a weakening treatment which requires an assisted mechanical fracture (in which case, the value of open area is more like 10%).
• the value of open area is more like 10%.
• at least the above condition on the open surface is fulfilled (it seems to be the most important; it seems to be able to be generalized to a range of 20% to 35%), possibly supplemented by one and / or the other conditions on the density or size of the defects.
• other effects or causes are not excluded by this interpretation, in particular the chemical nature of the bonds in the substrate can also favor the appearance of the phenomenon of self-sustained fracture wave.
• the invention seems to consist in promoting the conditions of embrittlement close, in their nature, to the conditions obtained during the thermal fracture, without however leading them to this point.
• the additional energy is then supplied by impulse complement.
• impulse energy can be global (thermal shock, ultra sound, etc.) or localized (laser, mechanical shock, tensile force, etc.).
• this pulse is localized, advantageously applied by a tool driven by a brief movement and of small amplitude.
• This energy supply is advantageously applied in the immediate vicinity of the buried layer, limited to only a part thereof, preferably to a peripheral portion thereof.
• This pulse can also consist in particular of a localized thermal contribution (for example applied by a laser pulse) or of an external stress (for example in the immediate vicinity of the weakened zone, in an edge of this one).
• the fracture can be obtained around ambient temperature (0 to 50 ° C), for example by application of a mechanical shock located at the edge of the assembly.
• this particular implementation does not limit the invention, and it may be, in certain situations, preferable to initiate the fracture at a higher temperature, for example around 300 ° C. It has been observed that the energy pulse has all its effectiveness in initiating the fracture wave when it leads to a very localized opening of the interface at the level of the fragile layer.
• a shock provided by a blade type tool induces the propagation of a self-sustaining fracture very effectively.
• the additional treatment is carried out in the form of the contribution of a thermal budget, this is less than the thermal budget necessary for obtaining the fracture.
• the surface condition of the substrate formed after fracture has improved high and low frequency roughness compared to the prior art. This result is particularly pronounced for low frequencies with in particular the absence of fracture waves. It is assumed that this result is linked to the fact that, in the context of the invention, the fracture wave propagates continuously, smoothly and within a very weakened layer (which would facilitate the propagation of the 'wave in a preferred area within the weakened layer), compared to what is obtained in the prior art.
• the phenomenon of self-sustaining fracture is observed only for points of narrow functioning, which can be difficult to reproduce systematically.
• the operating window for obtaining the self-sustaining fracture phenomenon is wide, which means that this phenomenon can be observed for a wide variation in the parameters for obtaining the fragile layer (parameters implantation and additional heat treatment, in particular). This is for example the case, when the implantation is a co-implantation under defined conditions (see below), and / or when the temperature profile of the additional treatment comprises adapted phases.
• the latter proposes a method for manufacturing a batch of substrates comprising the following steps: - implantation of each of the substrates, - treatment of embrittlement, in batch, substrates, - application of energy pulses simultaneously to each of the substrates, (collective processing).
• the substrate is embrittled and the embrittlement "energy” does not need to be maintained until the moment of application of the energetic pulse.
• We can even add that provoking a self-sustaining propagation in hot is not recommended in the case of hetero structures, because the constraints resulting from the differences of coefficient of thermal expansion, which are released during the fracture, could lead to breakage substrates.
• the operating window of the annealing step can be very large: the maximum limit for the duration of this pre-embrittlement annealing is strongly pushed back (or even no longer exists); this is entirely favorable to the industrialization of the process, • there is no assisted detachment since the self-sustaining fracture makes it possible to propagate the fracture wave instantly and without jerks over the entire surface of the plate ; It is not necessary for any blade to penetrate between the substrate and the future thin layer, which prevents damage to the layer transferred by the release tool.
• the self-healing fracture also significantly improves the topology of the surfaces thus released (with, for example, lower roughness (especially at low frequency)), and avoids crown defects, which makes the entire thin layer usable, including its periphery • the fact of no longer having to introduce tools is also favorable to the industrialization of the process and to a collective treatment of substrates in batches of plates.
• the source substrate is brought into intimate contact by said face with a stiffener or target substrate, the heat treatment contributes to improving the bonding energy between these substrates.
• This target substrate or stiffener is advantageously chosen from monocrystalline or polycrystalline materials, such as silicon or sapphire in particular, or in the form of an amorphous material, such as for example in the form of fused silica.
• an implantation of several species is carried out in concomitant or non-concomitant ways.
• it may be a co-location of hydrogen and helium.
• the hydrogen preferably in H + form
• a relatively low dose typically of the order of a few 10 16 H / cm 2
• helium can be implanted with a relatively low dose (typically of the order of 10 16 He / cm 2 , or of some 10 16 He / cm 2 ).
• a relatively low dose typically of the order of 10 16 He / cm 2 , or of some 10 16 He / cm 2 .
• the advantage of I ac o-implantation is to obtain the maximum embrittlement of this zone at the temperature sufficient for the solidity of the bonding interfaces without having to reach temperatures too high that heterostructures could not possibly be able to support and without being either obliged to use very high doses of implantation (which is a known means of limiting the value of the temperature necessary for the development of the weakened zone).
• the two species are implanted at the same level but a variant consists of shifting the implantation profiles.
• the two species can be implanted in any order, but advantageously, in the case of a silicon substrate and a hydrogen-helium co-implantation, it is preferable to implant the deepest profile in first.
• the source substrate e is made of a material chosen by semiconductors and insulators, monocrystalline, polycrystalline or amorphous. This is how it can be chosen by IV semiconductors; a particularly interesting example is silicon, but it can also be germanium or Si-Ge alloys. It can also be materials from the family of 111-iV or ll-Vi such as As-Ga or InP or an insulating material such as ferroelectric materials, for example LiNb03 and Li Ta03.
• the airtight treatment can cheerfully present a profile so as to reduce the time of this treatment, as for example disclosed in European patent application 02-293049 filed on December 10, 2002.
• the temperature range depends mainly on the nature of the species (or species) implanted (s) and the nature of the material constituting the source substrate as well as the nature of the stiffening substrate in particular in the case of a heterostructure.
• FIG. 1 thus represents a substrate 1, for example of silicon advantageously oxidized on its surface 4, in the process of being subjected to a treatment of implantation, shown diagrammatically by arrows 2, for example by bombardment, of ions or gaseous species.
• This implantation implies, at a given depth, the implantation of a first species which is capable of generating defects, for example hydrogen, preferably in the form of H + ions.
• this implantation can be a co-implantation of two species, for example Hydrogen - Helium.
• the two species are implanted at the same depth, but as a variant, it is preferable that the first implanted species is the one with the deepest profile, for example helium before hydrogen.
• the first implanted species is the one with the deepest profile, for example helium before hydrogen.
• the reverse order of the layouts may be preferable, even if the two layouts are not made at the same depth.
• FIG. 2 represents a step during which the source substrate, containing the weakened buried zone 3, by its face 4, is brought into intimate contact with a corresponding face of a target substrate 7, typically by direct molecular bonding, the function is that of a stiffener.
• a heat treatment is then applied which will, on the one hand, allow development of the embrittlement of the buried layer 3, and on the other hand, when a bonding step has taken place, allow consolidation of the bonding bonds between source substrate and target substrate.
• the temperature of this heat treatment is chosen within a range of temperatures suitable for developing the weakened zone. This treatment is advantageously carried out at a temperature chosen in the range 200 ° C-400 ° C, preferably in the range 300 ° C-
• FIG. 3 is shown the step of detaching the thin layer 3 vis-à-vis the rest of the source substrate, by means of the application of a pulse energy supply, preferably brief and of limited amplitude , for example in the form of a shock or an impulse. It is for example made up of a mechanical stress shown diagrammatically by the arrow 10. The detachment obtained is self-maintained in this sense, in particular, that there is no movement of a tool along the weakened layer.
• This localized contribution of energy is here limited to a part of the buried layer, shown diagrammatically in the form of a wedge effect corresponding to a shock applied by a tool such as a blade on (or near) a portion. of this weakened buried layer; but it can be of any other nature, for example a torque parallel to the plane of the weakened buried zone advantageously applied in the form of a pulse of low angular amplitude.
• the face of the thin layer which is released by the self-maintained detachment in the weakened buried zone has a much lower roughness than according to conventional solutions, without it it was necessary to provide for a particular treatment of the transferred surface or for significant polishing ("coarse”) after detachment.
• the source substrate 1 can be not only made of silicon, but more generally of any suitable known material, for example semiconductor
• this source substrate can be: • another semiconductor from column IV of the periodic table of the elements, for example made of germanium, • a semiconductor of the type ll-V or I I-VI such that eu AsGa or I nP, in particular, • an insulator, for example of the niobate or tantalate type, such as LiNbO3 or LiTaO3, in particular.
• the target substrate it can be produced in a wide variety of materials, to be chosen according to requirements, monocrystalline or polycrystalline (for example semiconductors, for example from the same materials as for the source substrate) or even amorphous (for example glasses or polymers); thus it can in particular be: • a crystalline material such as sapphire, • fused silica or another glass, • a simple stiffening layer, for example an oxide a few microns thick, deposited by any suitable known technique (this no longer corresponds, it is true, to a massive target substrate of the type shown in the drawings). It should be noted that the target substrate may be only an intermediate substrate, the thin layer of which is then transferred to a final substrate.
• monocrystalline or polycrystalline for example semiconductors, for example from the same materials as for the source substrate
• amorphous for example glasses or polymers
• the target substrate may be only an intermediate substrate, the thin layer of which is then transferred to a final substrate.
• an Si substrate (-700 ⁇ m) comprising a thermal SiO 2 layer on the surface can be implanted initially with helium atoms under implantation conditions 70keV - 10 16 He / cm 2 , then implanted with hydrogen atoms under implantation conditions 30keV - 4.25.10 16 H / cm 2 .
• This source substrate can then be joined to a target Si substrate (-700 ⁇ m) by molecular bonding.
• a heat treatment around 350 ° C for a certain time (2 hours for example) is then applied to the structure.
• the window for obtaining the self-sustaining fracture phenomenon is of the order of a few hours (i.e. an embrittlement annealing of between 2 and 6 hours). Then, with barely the beginning of insertion of a blade between the bonding interfaces in the form of a shock, the self-sustained detachment at the level of the maximum hydrogen concentration leads to the transfer of the thin layer of If on the target substrate.
• the roughness of the transferred surface measured at high frequency (by atomic force microscopy), of the order of 45 to 50 Angstroms RMS, and at low frequency (by mechanical profilometry), of the order of 10 Angstroms RMS, of this transferred surface are much lower than those which can be obtained in the case of H-implanted alone (32keV-5.5.10 16 H / cm 2 ) followed by a heat treatment at 500 ° C (roughness at high frequency of the order of 75 Angstroms RMS and roughness at low frequency of the order of 26 Angstroms RMS).
• a Si substrate (approximately 700 ⁇ m) comprising a layer of thermal Si0 2 on the surface (for example 200 nm) is first implanted with helium atoms under the conditions of implantation 70keV-2.10 16 He / cm 2 , then implanted with hydrogen atoms under conditions 30keV-3.10 16 H / cm 2 .
• This source substrate is then attached to a target substrate of molten silica (approximately 1000 ⁇ m) by direct bonding.
• a heat treatment around 300 ° C for a certain time (3 hours for example or more if the embrittlement treatment is suitable) is then applied to the structure.
• the self-detachment detachment at the maximum of the hydrogen profile leads to the transfer of the thin layer of Si onto the molten silica substrate, without breakage or degradation of either of the substrates derived from the heterostructure after detachment (the molten silica substrate comprising the layer thin Si on the one hand and the initial Si substrate peeled from the thin surface layer on the other).
• the roughness of the transferred surface measured at low frequency by the profilometry (of the order of 14 Angstroms RMS at low frequency) and in atomic force microscopy ((of the order of 75 Angstroms at high frequency) of this transferred surface are much lower than those which can be obtained in the case of H-implanted alone (32keV-5.5.10 16 H / cm 2 ) annealed at 400 ° C for 2 hours and according to the progressive mechanical detachment mode at room temperature (roughness at high frequency on the order of 90 Angstroms RMS and on the order of 40 Angstroms at low frequency RMS).
• Germanium on insulator The above information can be generalized in the case of a source substrate which is made of solid Germanium, with the following embrittlement parameters: dose 7. 10 16 H / cm ⁇ 2 with an energy between 30 and 200 keV depending on the thickness to be transferred, and annealing at 300 ° C - for a certain time (typically from 30 min to 1 hour, i.e. an operating window of 30 min). After this heat treatment specific to these implantation conditions, the density of the microcracks present in the implanted area is estimated between 0.03 and 0.035 per square micron, their sizes are Twist from 7 to 8 square microns, and the area open by these defects relative to the total area of the plate is between 25 and 32%.
• the characteristics of the weakened area may appear similar to the characteristics observed when the fracture is obtained thermally, but differ from those obtained after a weakening treatment of 280 ° C - 15 min which implies a mechanical fracture assisted in which case these values are lower: for example, the surface opened by the microcracks represents less than 10% of the total surface of the plate. Silicon on insulator
• AsGa on insulator The following conditions are applied: - Layout 5. 10 16 at / cm 2 ; at around 100 keV, - Annealing at 250 ° C between 3 and 30 minutes. The phenomenon of self-sustaining fracture can be observed when the embrittlement annealing is carried out in a window of 3 to 30 minutes

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