EP2002474A2 - Procede de detachement d'un film mince par fusion de precipites - Google Patents
Procede de detachement d'un film mince par fusion de precipitesInfo
- Publication number
- EP2002474A2 EP2002474A2 EP07731215A EP07731215A EP2002474A2 EP 2002474 A2 EP2002474 A2 EP 2002474A2 EP 07731215 A EP07731215 A EP 07731215A EP 07731215 A EP07731215 A EP 07731215A EP 2002474 A2 EP2002474 A2 EP 2002474A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- precipitates
- temperature
- layer
- detachment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Definitions
- the invention relates to a method for detaching a thin film from a substrate using a fusion of precipitates.
- the ions implanted in step 1 are advantageously hydrogen ions, but it is indicated that it is also possible to use rare gases.
- the substrate it is, in the examples considered, formed of silicon, but it is indicated that it can also be semiconductors of the group IV of the Table of Mendeleiev, such as germanium, silicon carbide or silicon-germanium alloys.
- the separation is obtained by means of a heat treatment, but it was then proposed, in variants of the process, to cause the separation by application, in complement or not such a heat treatment, a detachment stress (for example, the insertion of a blade between the two substrates and / or tensile and / or flexural and / or shear stresses, and / or still the application of ultrasounds or microwaves of power and frequency judiciously chosen).
- a detachment stress for example, the insertion of a blade between the two substrates and / or tensile and / or flexural and / or shear stresses, and / or still the application of ultrasounds or microwaves of power and frequency judiciously chosen.
- the defects thus created have been designated by various expressions; we have spoken not only of gas microcavities, but also of flatter defects (sometimes referred to as microplatelets).
- this technology uses gaseous microcavities located in the substrate, at a depth at which it is desired to "cut" a thin layer.
- the principle of bombarding a substrate with ions is also known for other reasons.
- various studies have been carried out in order to characterize the consequences of such dopings, that is to say, to characterize the crystalline defects or inclusions that may result from these dopings, and to determine, as far as possible how to avoid or at least minimize these deteriorations.
- S. K. JONES et al. In the article
- gallium ion at 100 keV at a dose of 10 15 / cm 2 in silicon leads to amorphization of the latter, with a gallium concentration peak that is greater than the solubility of gallium in silicon both at 900 ° C. and 1100 ° C. (the limit of solubility of gallium in silicon is barely of the order of 2.10 19 / cm 3 at 900 ° C. or 5.10 19 / cm 3 at 1100 ° C.); but an annealing treatment of 16 h at 550 ° C. leads to a recrystallization of the amorphous phase and, if the mixture is then annealed at 900 ° C. for 1 h, precipitates are formed which dissolve if the temperature or the duration increases (for example 8 hours at 900 ° C.) by eliminating the type II defects.
- J. MATSUO et al. have, in the article "Abnormal solid solution and activation behavior in Ga-implanted Si (100)", published in Applied Physics Letter, Vol 51, No. 24, December 14, 1987, pp 2037-2039, studied the effects of annealing on gallium-doped silicon, and concluded that the annealing behavior of the implanted substrates with gallium is different from that observed with other dopants.
- the object of the invention is to take advantage of the structural modifications observed in various implanting techniques, other than voids or gaseous cavities, to allow detachment of thin films, without having to generate microbubbles or microcavities or microplatelets, in particular being able to use, both for the substrate and for the implanted ions, species that do not form gaseous molecules. In particular, it aims to benefit from the formation of appropriate precipitates.
- the invention proposes a method for manufacturing a thin film from a substrate comprising the following steps:
- the ions implanted in step 1 are not gaseous species: the implanted ions are any type of non-gaseous ions, suitable for forming in the substrate, after implantation, alone or together with the species (or species) contained in the substrate, precipitates having a melting temperature within the range of temperatures at which it is usual to apply treatments to the substrates , thin films or components used in microelectronics.
- the implantation of the ions in practice by bombardment, is preferably carried out at a temperature below the melting point of the precipitates, which may in particular enable the precipitates to begin to form in the solid phase,
- the melting temperature of the precipitates is advantageously greater than the ambient temperature, which ensures that, at ambient temperature, the precipitates are in the solid phase, which minimizes the risk of inadvertent separation; implantation, in principle by bombardment; can be carried out substantially at ambient temperature, which corresponds to conditions of particular interest from the energy point of view,
- the detachment can be carried out after raising the temperature of the substrate above the melting point of the precipitates, which implies that the precipitates are normally in the solid phase and only go into the liquid phase when it is useful; this detachment is for example carried out at a temperature of at least 15 0 C above the melting temperature of the precipitates, which helps to ensure that all the precipitates are in the liquid phase, regardless of their locations and sizes, the detachment may be preceded by a plurality of cycles of varying the temperature of the substrate containing the precipitates on either side of the melting temperature thereof, which contributes to increasing the local embrittlement of the layer in which precipitates are confined, for example due to the change of volume associated with the successive phase changes; for example, the plurality of cycles comprises of the order of ten or more cycles, which implies a very sensitive embrittlement; when the melting temperature is greater than the ambient temperature, this plurality of cycles may consist in varying the temperature of the substrate of the ambient temperature between a temperature greater than the melting temperature,
- the melting temperature of the precipitates may be chosen greater than ambient temperature and below 200 ° C., which is generally considered to be a low temperature; to do this, the ions are advantageously chosen from the group comprising cesium, gallium, rubidium, potassium, sodium, indium and lithium (this list does not claim to be exhaustive, however, because many other precipitates can be obtained by implantation while having a melting temperature in the range); in the case where it is desired to have a melting temperature of the precipitates greater than ambient but less than 100 ° C., which is interesting from an energetic point of view, the ions are advantageously chosen from within the subgroup comprising cesium, gallium, rubidium, potassium and sodium (this list is not exhaustive either, because other precipitates can be obtained by implantation while having a melting temperature situated in the range considered); it is even possible to choose a melting temperature of the precipitates greater than ambient temperature but below 50 ° C., which implies only very moderate temperature variations, in which case the ions are advantageously chosen from within the subgroup comprising the cesium and gallium (
- the ions are advantageously gallium, which corresponds to a practical case of particular interest, especially as its melting point is particularly low,
- the substrate may constitute a massive piece, such as a wafer; alternatively, the substrate may be only a layer carried by a support, for example called a carrier substrate, within a workpiece (such as a wafer) formed of several superposed layers, in practice made of different materials (in this case, in the context of the invention, is denoted by substrate the layer in which the formation of the precipitates occurs, most often but not necessarily, this layer called “substrate” is the upper layer of this multilayer piece, possibly covered with a much thinner layer, for example oxide),
- the substrate (and therefore at least the portion of the aforementioned part where the formation of the precipitates takes place) is advantageously made of a crystalline material (monocrystalline or even polycrystalline),
- the substrate (and thus at least the portion of the aforementioned part where the formation of the precipitates takes place) is advantageously made of a semiconductor material - the substrate is advantageously made of silicon, which also corresponds to a practical case of great importance; however, the substrate may also be more generally chosen in one or more materials of group IV of the Mendeleyev table,
- the ions when the ions are gallium ions implanted in silicon, they are advantageously implanted in the silicon substrate with an energy of at least about 100 keV, with a dose of at least 10 15 / cm 2 ,
- the substrate may be gallium nitride, which is also a case of great practical importance; more generally, the substrate may also be chosen from materials of the groups H1-V of the Mendeleyev table, such as AsGa and InP, or of a material of the group H1-N (GaN, InN, AlN, for example, the substrate may also, according to yet another variant, be chosen from Group II-VI materials such as ZnO or ZnSe, for example,
- these ions are gallium ions implanted in a substrate of gallium nitride, these ions are advantageously implanted with an energy of at least about 50 keV, with a dose of at least 10 15 / cm 2 ,
- the precipitates may consist essentially of the species implanted in the substrate, which contributes to minimizing the degradation of the substrate outside the layer; alternatively, when they are not solely formed of implanted ions, these precipitates contain, in addition to the implanted species, a species contained in the substrate; this is particularly the case of the eutectic that can be observed between gallium and silicon, the face of the substrate through which the ions are implanted is advantageously placed in intimate contact with a stiffener; however, it may not be useful, especially when the thin layer finally obtained is sufficiently rigid to be self-supporting, - the intimate contact of the face of the substrate with the stiffener is for example carried out at a temperature below the temperature melting of the precipitates, which in particular prevents the setting in intimate contact at a time when the precipitates are in the liquid phase,
- the intimate contact of the substrate with the stiffener is achieved by molecular adhesion, which corresponds to a well known and proven intimate contacting technique; a heat treatment is advantageously applied to reinforce the bonding, that is to say the interface between the substrate and the stiffener;
- the bringing into intimate contact can also be obtained by deposition of a sufficiently thick layer to form said stiffener
- this layer is advantageously carried out by epitaxy from the substrate, typically over several hundred microns (this epitaxial layer and the substrate are therefore advantageously made of identical materials or at least compatible from the crystalline lattice point of view); in this case, this substrate is preferably carried by a carrier substrate having a coefficient of thermal expansion substantially different from that of the epitaxial layer, in which case a temperature variation, for example during the descent after the epitaxial deposition, causes the appearance of stresses at the level of the precipitates, which favors the rupture at the level of these precipitates,
- the detachment request is for example mechanical, which allows a good control of its amplitude; it can also be chemical (it can take advantage of the stresses generated by the presence of the precipitates, in fact a selective chemical attack can preferentially attack the constrained areas of the substrate), this detachment bias is advantageously substantially localized at the level of the layer of precipitates in the liquid phase, which makes it possible not to stress the rest of the substrate,
- the localized detachment request can be made by inserting a blade between the substrate and the stiffener, which is a well-known technique in itself,
- this detachment bias can be applied in the form of tensile forces applied to the substrate and to the stiffener; alternatively it is about bending forces, and / or shear forces, which also corresponds to techniques well known per se; this bias can also be applied by means of ultrasound or microwaves of appropriate power and frequency,
- the stiffener may be made of the same material as that which constitutes the substrate; however, this stiffener can also be chosen from a material having a coefficient of expansion substantially different from that of the substrate, given the low temperatures that the process uses,
- this process advantageously also comprises a finishing treatment applied to the thin film face exposed by the detachment; this method advantageously also comprises steps, known per se, for the manufacture of all or part of microelectronic components between implantation and detachment,
- This method may further comprise a heat treatment, for example annealing, suitable to promote the appearance of precipitates following implantation (preferably before possible intimate contact with a stiffener, to minimize the mass to wear at high temperature, but this heat treatment can also take place after this intimate contact, in which case the formation of the precipitates is carried out in several steps).
- a heat treatment for example annealing, suitable to promote the appearance of precipitates following implantation (preferably before possible intimate contact with a stiffener, to minimize the mass to wear at high temperature, but this heat treatment can also take place after this intimate contact, in which case the formation of the precipitates is carried out in several steps).
- FIG. 1 is a schematic view of a substrate subjected to ion bombardment, and inside which has appeared a layer of inclusions or precipitates
- FIG. 2 is a schematic view of this implanted and weakened substrate, after bonding a stiffener
- Figure 3 is a schematic view of the assembly of Figure 2, after application of detachment stresses (in the form of mechanical stresses) at a temperature where the precipitates are liquid.
- Figures 1 to 3 show the main steps of implementation of the method according to the invention.
- FIG. 1 represents a substrate 1 (sometimes called a wafer), in principle made of a semiconductor material, such as silicon.
- precipitates (mainly dose, energy and temperature) are chosen so as to create deep-confined precipitates, so as to allow the formation of a layer 3 of precipitates (or inclusions), these precipitates being formed of implanted atoms and possibly atoms of the substrate.
- These precipitates furthermore have the particularity of being in a first phase, namely solid, and of having a melting temperature within (or even less than) a range of temperatures considered moderate in the microelectronics, and therefore compatible with with the substrate.
- This melting temperature is advantageously less than 200 ° C., or even less than 100 ° C. or even less than 50 ° C.
- This bombardment is applied through an upper face 4 of the substrate, optionally covered with a layer 10, obtained voluntarily or otherwise, for example oxide.
- This bombardment causing the formation of precipitates may be accompanied by a heat treatment, joint or posterior, allowing the diffusion of the implanted atoms to form the desired precipitates.
- the layer of precipitates 3 and the free surface 4 delimit the future thin film 5 that is sought to obtain, while the remainder of the substrate, under this layer 3, is designated as reference 6.
- This thin film typically has a thickness of the order of one micron, or even less than one micron, or even less than one-tenth of a micron.
- the substrate is solid, that is to say, it forms the entire self-supporting part (such as a wafer) that is implemented.
- this substrate is only a layer (carried by a support) within a part formed of at least two layers (at least the layer forming the substrate and a layer forming the support) in materials in practice different, the essential being, for the implementation of the invention, the formation of precipitates is carried out in this layer forming the substrate; preferably, the substrate is the upper layer of this multilayer piece (which does not exclude that there may be a very thin layer of coating such as the layer 10 above).
- a support substrate 7 (optional), sometimes also called stiffener, is put in close contact with the future thin film; here it is bonded, preferably by molecular adhesion, to the free surface 4 of the substrate through which the ion bombardment has taken place.
- this stiffener can be made by depositing on the future thin film by any technique known to those skilled in the art (growth in the vapor phase, for example, etc.).
- This stiffener may be made of the same material as the starting substrate 1 (or have this material as an essential constituent: it may for example be an oxide of the species constituting the substrate). It may also consist of a material having a coefficient of thermal expansion different from that of the substrate provided that the substrate / stiffener assembly is compatible with the subsequent heat treatments.
- a stiffener may be omitted if the thin film finally obtained has a sufficient thickness, in particular to be handled without degradation.
- a detachment request here a concentration of stresses, is preferably applied at the level of the precipitate layer.
- This localized application of stresses is here obtained by means of a blade whose tip 11 is, taking into account the dimensions of the thin film (typically of the order of a few hundredths or even tenths of a micron), both with respect to the interface between the substrates and facing the layer of precipitates.
- this application of mechanical stresses is obtained by applying tensile and / or bending and / or shear stresses, as is known per se in the detachment of thin films; this application of detachment constraints can also result from the application of ultrasounds or microwaves of power and carefully chosen frequencies.
- this detachment bias is a chemical etching, for example a selective etching, for example taking advantage of the constrained state of the zone of the substrate in which the layer of precipitates has been formed.
- the passage of precipitates from the solid phase to the liquid phase may result from the simple application of mechanical and / or chemical stresses. Otherwise, the rise in temperature may be simultaneous with the application of these stresses or intervene before it, for a good homogeneity in temperature, ensuring that all the precipitates are in the same state.
- the detachment of the thin film is advantageously carried out at a temperature different from the implantation temperature and the bonding temperature, so as to induce that the precipitates change phase (solid to liquid) at the moment of detachment, and only then .
- the fact of being able to cause successive changes of phase may increase the embrittlement of the layer 3 by the precipitates.
- the precipitates are liquid at the end of implantation or during bonding, this is not unacceptable, as long as no excessive stress is applied under these conditions (then provide moderate doses of implantation, so as to prevent detachment intervene for too low stress especially mechanical).
- This finishing treatment comprises for example a conventional mechanical polishing followed by a high temperature annealing treatment to cure any structural defects that may exist in the thin film.
- a silicon substrate for example monocrystalline (but it can also be a polycrystalline substrate), is implanted with Ga + ions under the following conditions:
- This implantation is performed substantially at room temperature.
- the depth of the gallium peak thus obtained is located at 75 nm below the surface (this value could be validated by simulations on the SRIM software (that is to say Stopping and Range of Ions in Matter). 1 £>
- the substrate is then bonded, by molecular adhesion, to a support substrate, for example made of the same material as the initial substrate, here silicon.
- a support substrate for example made of the same material as the initial substrate, here silicon.
- This intimate contact is carried out substantially at room temperature.
- An annealing treatment at 1100 ° C. for 10 seconds is then applied to the assembly, which contributes to reinforcing the interface between the two substrates; gallium or Ga (i- X) Si x precipitates (see the above-mentioned articles) are observed located at the depth of the gallium peak. These precipitates are liquid beyond a threshold of 30 ° C. and, under these conditions, weaken the implanted substrate.
- Finishing treatments of the polishing type are then applied to remove precipitate residues, and obtain a good quality surface condition.
- the thin film can then be treated according to the known techniques in the case of implantation of gaseous ions. There may be, on the free face 4, steps for forming all or part of microelectronic components, between the implantation and the detachment.
- a silicon substrate for example having the same characteristics as the starting substrate of Example 1, is implanted with Ga + ions under the following conditions (substantially at room temperature):
- Annealing at 1100 ° C. for 10 seconds gives rise to precipitates, as in Example 1, located at a depth of 75 nm.
- the substrate is then bonded, by molecular adhesion, to a support substrate (unlike Example 1 where this bonding is performed before the annealing treatment). This bonding being carried out at a temperature below 30 ° C., the precipitates remain solid.
- Example 1 the application of mechanical stresses at a temperature greater than 30 ° C. (at 50 ° C., for example) by inserting a blade between the two substrates causes the assembly to break at the level of the precipitates. in the first substrate, which are in the liquid state.
- Example 1 a thin film carried on a support substrate is obtained, and finishing treatments (polishing, annealing, etc.) make it possible to eliminate the residues of precipitates and to obtain a good surface quality.
- This thin film can, as in Example 1, be the subject of treatments allowing the use of the thin film.
- Example 3 A silicon substrate is implanted under the same conditions as in Example 1 (or Example 2), then stuck on a support substrate and annealed for 10 seconds at 1100 ° C., as in Example 1.
- a series of temperature cycles (for example about ten) around the melting temperature of the precipitates, that is to say around 30 ° C., with temperature variations for example between 20 ° C. (or room temperature) ) and 40 ° C, is then applied: the precipitates thus pass cyclically from a solid phase to a liquid phase and vice versa, changing volume (the gallium is denser in the liquid state than in the solid state) which locally increases the degradation and thus the embrittlement of the layer of the substrate in which the precipitates are concentrated.
- a substrate made of gallium nitride GaN (w sousrtzite phase, for example), is implanted with Ga + ions under the following conditions (substantially at room temperature):
- Solid gallium precipitates are thus obtained (see the aforementioned article by DHARA et al.), Located at a depth of 24 nm below the implantation surface (including according to MIRS simulations).
- the GaN substrate is then adhesively bonded to a support substrate, for example a sapphire substrate, the temperature of the steps involved in the bond remaining below 30 ° C., so that the precipitates remain solid throughout the collage operation.
- a support substrate for example a sapphire substrate
- a heat treatment comprising a step at more than 30 ° C. (at 50 ° C., for example) is then applied to the assembly, resulting in the phase change of the precipitates that become liquid, and weaken the substrate at the level of the layer in which they are concentrated.
- a GaN thin film is thus obtained which can then be subjected to all the appropriate finishing and processing treatments.
- Example 5 Starting from a piece formed of a sapphire carrier substrate (alternatively it may be another material different from GaN) carrying a GaN layer of a few microns; the substrate, in the sense of the foregoing description, is here formed of this GaN layer.
- the substrate After formation, in this layer, of precipitates by bombardment (assisted or not by a heat treatment), for example according to the data of the preceding example, a resumption of epitaxy of GaN (epitaxy, typically carried out between 800 0 C and 1100 0 C) over several hundred microns.
- the precipitates are liquid at the epitaxial temperature.
- a fracture can be obtained at the area of the precipitates (always in the liquid state) because of the difference in coefficient of thermal expansion between the material of the carrier substrate (here sapphire) and of that of the epitaxial material (inducing stresses at the level of the structure), possibly in combination with the application of an external mechanical stress.
- a solid GaN substrate is obtained formed of the epitaxial material and the portion of the starting substrate located above the precipitated zone.
- This example demonstrates the value of introducing species with high melting points.
- melting point typically less than of the order of 200 ° C. or, on the contrary, preference for elements having higher melting points:
- These atoms can in particular be implanted in solid or non-crystalline or non-crystalline substrates, semiconductor or non-semiconductor, in silicon or in a silicon-based material (for example, silicon oxide, or even silicon carbide or silicon nitride). , or in other materials used in microelectronics (GaN - see above, GaAs, a-Si: H, diamond, sapphire, in particular, or even germanium and its alloys with silicon), or even in a material of the group Hl-V or the group Hl-N or the group H-Vl.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0651088A FR2899378B1 (fr) | 2006-03-29 | 2006-03-29 | Procede de detachement d'un film mince par fusion de precipites |
PCT/FR2007/000534 WO2007110515A2 (fr) | 2006-03-29 | 2007-03-28 | Procede de detachement d'un film mince par fusion de precipites |
Publications (2)
Publication Number | Publication Date |
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EP2002474A2 true EP2002474A2 (fr) | 2008-12-17 |
EP2002474B1 EP2002474B1 (fr) | 2016-09-21 |
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ID=37101330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP07731215.5A Not-in-force EP2002474B1 (fr) | 2006-03-29 | 2007-03-28 | Procede de detachement d'un film mince par fusion de precipites |
Country Status (7)
Country | Link |
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US (1) | US7670930B2 (fr) |
EP (1) | EP2002474B1 (fr) |
JP (1) | JP5198429B2 (fr) |
KR (1) | KR101329484B1 (fr) |
CN (1) | CN101449369B (fr) |
FR (1) | FR2899378B1 (fr) |
WO (1) | WO2007110515A2 (fr) |
Cited By (1)
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US9048288B2 (en) | 2010-06-23 | 2015-06-02 | Soitec | Method for treating a part made from a decomposable semiconductor material |
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FR2748851B1 (fr) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
FR2848336B1 (fr) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2861497B1 (fr) * | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
US7910456B1 (en) * | 2006-05-26 | 2011-03-22 | Silicon Genesis Corporation | Liquid based substrate method and structure for layer transfer applications |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2922359B1 (fr) * | 2007-10-12 | 2009-12-18 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire |
FR2930072B1 (fr) | 2008-04-15 | 2010-08-20 | Commissariat Energie Atomique | Procede de transfert d'une couche mince par echange protonique. |
JP2010165927A (ja) * | 2009-01-16 | 2010-07-29 | Sumitomo Electric Ind Ltd | 発光素子用基板 |
FR2942073B1 (fr) * | 2009-02-10 | 2011-04-29 | Soitec Silicon On Insulator | Procede de realisation d'une couche de cavites |
FR2943174B1 (fr) * | 2009-03-12 | 2011-04-15 | Soitec Silicon On Insulator | Adaptation du parametre de maille d'une couche de materiau contraint |
FR2947098A1 (fr) * | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
JP5581619B2 (ja) * | 2009-07-07 | 2014-09-03 | 株式会社村田製作所 | 圧電デバイスの製造方法および圧電デバイス |
TWI445061B (zh) * | 2011-01-24 | 2014-07-11 | Hon Hai Prec Ind Co Ltd | 氮化鎵基板的製作方法 |
DE102011010751A1 (de) | 2011-02-09 | 2012-08-09 | Osram Opto Semiconductors Gmbh | Verfahren zur Durchführung eines Epitaxieprozesses |
FR2974944B1 (fr) * | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
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-
2006
- 2006-03-29 FR FR0651088A patent/FR2899378B1/fr active Active
-
2007
- 2007-03-28 WO PCT/FR2007/000534 patent/WO2007110515A2/fr active Application Filing
- 2007-03-28 US US12/293,193 patent/US7670930B2/en not_active Expired - Fee Related
- 2007-03-28 CN CN2007800116203A patent/CN101449369B/zh not_active Expired - Fee Related
- 2007-03-28 JP JP2009502149A patent/JP5198429B2/ja not_active Expired - Fee Related
- 2007-03-28 EP EP07731215.5A patent/EP2002474B1/fr not_active Not-in-force
- 2007-03-28 KR KR1020087026389A patent/KR101329484B1/ko not_active IP Right Cessation
Non-Patent Citations (1)
Title |
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See references of WO2007110515A2 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9048288B2 (en) | 2010-06-23 | 2015-06-02 | Soitec | Method for treating a part made from a decomposable semiconductor material |
Also Published As
Publication number | Publication date |
---|---|
WO2007110515A3 (fr) | 2008-01-10 |
CN101449369A (zh) | 2009-06-03 |
FR2899378A1 (fr) | 2007-10-05 |
JP2009531845A (ja) | 2009-09-03 |
JP5198429B2 (ja) | 2013-05-15 |
WO2007110515A2 (fr) | 2007-10-04 |
KR20090005091A (ko) | 2009-01-12 |
US7670930B2 (en) | 2010-03-02 |
KR101329484B1 (ko) | 2013-11-13 |
US20090061594A1 (en) | 2009-03-05 |
WO2007110515A8 (fr) | 2009-02-05 |
CN101449369B (zh) | 2011-11-23 |
FR2899378B1 (fr) | 2008-06-27 |
EP2002474B1 (fr) | 2016-09-21 |
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