FR2943174B1 - Adaptation du parametre de maille d'une couche de materiau contraint - Google Patents

Adaptation du parametre de maille d'une couche de materiau contraint

Info

Publication number
FR2943174B1
FR2943174B1 FR0901135A FR0901135A FR2943174B1 FR 2943174 B1 FR2943174 B1 FR 2943174B1 FR 0901135 A FR0901135 A FR 0901135A FR 0901135 A FR0901135 A FR 0901135A FR 2943174 B1 FR2943174 B1 FR 2943174B1
Authority
FR
France
Prior art keywords
adaptation
layer
contaminated material
mesh parameter
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0901135A
Other languages
English (en)
Other versions
FR2943174A1 (fr
Inventor
Pascal Guenard
Frederic Dupont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0901135A priority Critical patent/FR2943174B1/fr
Priority to CN201080011062.2A priority patent/CN102349148B/zh
Priority to DE112010001477.9T priority patent/DE112010001477B4/de
Priority to US13/147,749 priority patent/US8785293B2/en
Priority to PCT/IB2010/000296 priority patent/WO2010103356A1/fr
Publication of FR2943174A1 publication Critical patent/FR2943174A1/fr
Application granted granted Critical
Publication of FR2943174B1 publication Critical patent/FR2943174B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
FR0901135A 2009-03-12 2009-03-12 Adaptation du parametre de maille d'une couche de materiau contraint Active FR2943174B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0901135A FR2943174B1 (fr) 2009-03-12 2009-03-12 Adaptation du parametre de maille d'une couche de materiau contraint
CN201080011062.2A CN102349148B (zh) 2009-03-12 2010-02-15 应变材料层的晶格参数的调节
DE112010001477.9T DE112010001477B4 (de) 2009-03-12 2010-02-15 Verfahren zum Anpassen des Gitterparameters einer Keimschicht aus verspanntem Material
US13/147,749 US8785293B2 (en) 2009-03-12 2010-02-15 Adaptation of the lattice parameter of a layer of strained material
PCT/IB2010/000296 WO2010103356A1 (fr) 2009-03-12 2010-02-15 Adaptation du paramètre de réseau d'une couche de matériau contraint

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0901135A FR2943174B1 (fr) 2009-03-12 2009-03-12 Adaptation du parametre de maille d'une couche de materiau contraint

Publications (2)

Publication Number Publication Date
FR2943174A1 FR2943174A1 (fr) 2010-09-17
FR2943174B1 true FR2943174B1 (fr) 2011-04-15

Family

ID=41181016

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0901135A Active FR2943174B1 (fr) 2009-03-12 2009-03-12 Adaptation du parametre de maille d'une couche de materiau contraint

Country Status (5)

Country Link
US (1) US8785293B2 (fr)
CN (1) CN102349148B (fr)
DE (1) DE112010001477B4 (fr)
FR (1) FR2943174B1 (fr)
WO (1) WO2010103356A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5696543B2 (ja) * 2011-03-17 2015-04-08 セイコーエプソン株式会社 半導体基板の製造方法
CA2916443C (fr) * 2013-06-27 2021-09-07 Soitec Procedes de fabrication de structures semi-conductrices comportant des cavites remplies d'un materiau sacrificiel
WO2016209892A1 (fr) * 2015-06-22 2016-12-29 University Of South Carolina Conception de del alingabn mesa double de grande surface et autres applications
FR3064820B1 (fr) * 2017-03-31 2019-11-29 Soitec Procede d'ajustement de l'etat de contrainte d'un film piezoelectrique
GB2586862B (en) * 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure
CN111680441B (zh) * 2020-06-08 2023-03-28 南京理工大学 一种适用于热力工况的梯度点阵夹芯板结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560296B2 (en) * 2000-07-07 2009-07-14 Lumilog Process for producing an epitalixal layer of galium nitride
US6573126B2 (en) * 2000-08-16 2003-06-03 Massachusetts Institute Of Technology Process for producing semiconductor article using graded epitaxial growth
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2894990B1 (fr) * 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
US20050026432A1 (en) * 2001-04-17 2005-02-03 Atwater Harry A. Wafer bonded epitaxial templates for silicon heterostructures
EP1443550A1 (fr) * 2003-01-29 2004-08-04 S.O.I. Tec Silicon on Insulator Technologies S.A. Procédé de fabrication d'une couche cristalline contrainte sur isolant, structure semiconductrice servant à ladite fabrication et structure semiconductrice ainsi fabriquée
US7348260B2 (en) 2003-02-28 2008-03-25 S.O.I.Tec Silicon On Insulator Technologies Method for forming a relaxed or pseudo-relaxed useful layer on a substrate
US9011598B2 (en) * 2004-06-03 2015-04-21 Soitec Method for making a composite substrate and composite substrate according to the method
US7595507B2 (en) * 2005-04-13 2009-09-29 Group4 Labs Llc Semiconductor devices having gallium nitride epilayers on diamond substrates
US8334155B2 (en) 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
JP2007326771A (ja) * 2006-05-30 2007-12-20 Sharp Corp 形成方法および化合物半導体ウェハ
FR2917232B1 (fr) * 2007-06-06 2009-10-09 Soitec Silicon On Insulator Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion.

Also Published As

Publication number Publication date
WO2010103356A1 (fr) 2010-09-16
FR2943174A1 (fr) 2010-09-17
US8785293B2 (en) 2014-07-22
US20110294245A1 (en) 2011-12-01
CN102349148A (zh) 2012-02-08
DE112010001477T5 (de) 2012-09-06
DE112010001477B4 (de) 2017-11-02
CN102349148B (zh) 2014-07-09

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