TWI349303B - Method of catastrophic transfer of a thin film after co-implantation - Google Patents

Method of catastrophic transfer of a thin film after co-implantation

Info

Publication number
TWI349303B
TWI349303B TW093132480A TW93132480A TWI349303B TW I349303 B TWI349303 B TW I349303B TW 093132480 A TW093132480 A TW 093132480A TW 93132480 A TW93132480 A TW 93132480A TW I349303 B TWI349303 B TW I349303B
Authority
TW
Taiwan
Prior art keywords
implantation
thin film
catastrophic
transfer
catastrophic transfer
Prior art date
Application number
TW093132480A
Other languages
English (en)
Other versions
TW200524010A (en
Inventor
Nguyet-Phuong Nguyen
Ian Cayrefourcq
Christelle Lagahe-Blanchard
Original Assignee
Soitec Silicon On Insulator
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Commissariat Energie Atomique filed Critical Soitec Silicon On Insulator
Publication of TW200524010A publication Critical patent/TW200524010A/zh
Application granted granted Critical
Publication of TWI349303B publication Critical patent/TWI349303B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093132480A 2003-10-28 2004-10-27 Method of catastrophic transfer of a thin film after co-implantation TWI349303B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0312621A FR2861497B1 (fr) 2003-10-28 2003-10-28 Procede de transfert catastrophique d'une couche fine apres co-implantation

Publications (2)

Publication Number Publication Date
TW200524010A TW200524010A (en) 2005-07-16
TWI349303B true TWI349303B (en) 2011-09-21

Family

ID=34400866

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093132480A TWI349303B (en) 2003-10-28 2004-10-27 Method of catastrophic transfer of a thin film after co-implantation

Country Status (8)

Country Link
US (1) US8309431B2 (zh)
EP (2) EP1678755B1 (zh)
JP (2) JP5142528B2 (zh)
KR (2) KR20060122830A (zh)
CN (2) CN100474556C (zh)
FR (1) FR2861497B1 (zh)
TW (1) TWI349303B (zh)
WO (2) WO2005043616A1 (zh)

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FR2912258B1 (fr) 2007-02-01 2009-05-08 Soitec Silicon On Insulator "procede de fabrication d'un substrat du type silicium sur isolant"
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KR101866348B1 (ko) * 2016-12-28 2018-06-12 한국에너지기술연구원 수소 헬륨 공동 주입을 통한 박형 실리콘 기판 제조 방법
FR3078822B1 (fr) * 2018-03-12 2020-02-28 Soitec Procede de preparation d’une couche mince de materiau ferroelectrique a base d’alcalin
FR3093860B1 (fr) 2019-03-15 2021-03-05 Soitec Silicon On Insulator Procédé de transfert d’une couche utile sur un substrat support
FR3093859B1 (fr) 2019-03-15 2021-02-12 Soitec Silicon On Insulator Procédé de transfert d’une couche utile sur une substrat support
FR3093716B1 (fr) 2019-03-15 2021-02-12 Soitec Silicon On Insulator systeme de fracture d'une pluralitÉ d'assemblages de tranches.
FR3093858B1 (fr) 2019-03-15 2021-03-05 Soitec Silicon On Insulator Procédé de transfert d’une couche utile sur un substrat support

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DE602004011353T2 (de) 2004-10-19 2008-05-15 S.O.I. Tec Silicon On Insulator Technologies S.A. Verfahren zur Herstellung einer verspannten Silizium-Schicht auf einem Substrat und Zwischenprodukt
FR2889887B1 (fr) * 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
EP1928020B1 (en) 2006-11-30 2020-04-22 Soitec Method of manufacturing a semiconductor heterostructure
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

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EP1678754B1 (fr) 2015-07-15
TW200524010A (en) 2005-07-16
CN100474556C (zh) 2009-04-01
KR101120621B1 (ko) 2012-03-16
US8309431B2 (en) 2012-11-13
KR20060122830A (ko) 2006-11-30
EP1678755A1 (fr) 2006-07-12
WO2005043615A1 (fr) 2005-05-12
FR2861497B1 (fr) 2006-02-10
WO2005043616A1 (fr) 2005-05-12
FR2861497A1 (fr) 2005-04-29
EP1678754A1 (fr) 2006-07-12
US20070281445A1 (en) 2007-12-06
JP2007510298A (ja) 2007-04-19
JP5142528B2 (ja) 2013-02-13
JP2007511069A (ja) 2007-04-26
EP1678755B1 (fr) 2012-10-17
CN1868053A (zh) 2006-11-22
CN1864256A (zh) 2006-11-15
KR20070051765A (ko) 2007-05-18
CN100474557C (zh) 2009-04-01
JP5244315B2 (ja) 2013-07-24

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