JP5201790B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5201790B2
JP5201790B2 JP2005334612A JP2005334612A JP5201790B2 JP 5201790 B2 JP5201790 B2 JP 5201790B2 JP 2005334612 A JP2005334612 A JP 2005334612A JP 2005334612 A JP2005334612 A JP 2005334612A JP 5201790 B2 JP5201790 B2 JP 5201790B2
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JP
Japan
Prior art keywords
film
layer
substrate
semiconductor film
forming
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005334612A
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English (en)
Japanese (ja)
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JP2006179874A (ja
JP2006179874A5 (enExample
Inventor
肇 徳永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005334612A priority Critical patent/JP5201790B2/ja
Publication of JP2006179874A publication Critical patent/JP2006179874A/ja
Publication of JP2006179874A5 publication Critical patent/JP2006179874A5/ja
Application granted granted Critical
Publication of JP5201790B2 publication Critical patent/JP5201790B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005334612A 2004-11-26 2005-11-18 半導体装置の作製方法 Expired - Fee Related JP5201790B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005334612A JP5201790B2 (ja) 2004-11-26 2005-11-18 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004342902 2004-11-26
JP2004342902 2004-11-26
JP2005334612A JP5201790B2 (ja) 2004-11-26 2005-11-18 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012052983A Division JP2012151483A (ja) 2004-11-26 2012-03-09 半導体装置の作製方法、及び半導体装置

Publications (3)

Publication Number Publication Date
JP2006179874A JP2006179874A (ja) 2006-07-06
JP2006179874A5 JP2006179874A5 (enExample) 2008-12-04
JP5201790B2 true JP5201790B2 (ja) 2013-06-05

Family

ID=36733640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005334612A Expired - Fee Related JP5201790B2 (ja) 2004-11-26 2005-11-18 半導体装置の作製方法

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JP (1) JP5201790B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8696811B2 (en) 2008-04-24 2014-04-15 Memc Electronic Materials, Inc. Method for feeding arsenic dopant into a silicon crystal growing apparatus

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090009938A (ko) 2006-05-25 2009-01-23 닛본 덴끼 가부시끼가이샤 금속 화합물층의 형성 방법, 반도체 장치의 제조 방법 및 금속 화합물층의 형성 장치
JP5255793B2 (ja) * 2006-07-21 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7811911B2 (en) * 2006-11-07 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7622386B2 (en) 2006-12-06 2009-11-24 International Business Machines Corporation Method for improved formation of nickel silicide contacts in semiconductor devices
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI535014B (zh) 2010-11-11 2016-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
EP3925004A4 (en) * 2019-02-11 2023-03-08 Sunrise Memory Corporation VERTICAL THIN FILM TRANSISTOR AND USE AS BITLINE CONNECTOR FOR THREE DIMENSIONAL MEMORY ARRANGEMENTS
CN111969029B (zh) * 2020-08-31 2023-07-25 江苏仕邦柔性电子研究院有限公司 一种用于oled显示面板的tft器件结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3325963B2 (ja) * 1993-08-10 2002-09-17 株式会社東芝 薄膜トランジスタ
JP3377137B2 (ja) * 1994-12-26 2003-02-17 シャープ株式会社 半導体装置及びその製造方法、並びに薄膜トランジスタ及びその製造方法、並びに液晶表示装置
KR100198621B1 (ko) * 1995-12-26 1999-06-15 구본준 반도체소자의 실리사이드막 형성방법
JPH1197691A (ja) * 1997-09-18 1999-04-09 Toshiba Corp 薄膜トランジスタおよび接合構造
JP2003051600A (ja) * 2001-05-30 2003-02-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
JP2003282879A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法
JP2004221115A (ja) * 2003-01-09 2004-08-05 Seiko Epson Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8696811B2 (en) 2008-04-24 2014-04-15 Memc Electronic Materials, Inc. Method for feeding arsenic dopant into a silicon crystal growing apparatus

Also Published As

Publication number Publication date
JP2006179874A (ja) 2006-07-06

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