JP2006179874A5 - - Google Patents
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- Publication number
- JP2006179874A5 JP2006179874A5 JP2005334612A JP2005334612A JP2006179874A5 JP 2006179874 A5 JP2006179874 A5 JP 2006179874A5 JP 2005334612 A JP2005334612 A JP 2005334612A JP 2005334612 A JP2005334612 A JP 2005334612A JP 2006179874 A5 JP2006179874 A5 JP 2006179874A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- forming
- film
- insulating film
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 16
- 229910052759 nickel Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 229910021334 nickel silicide Inorganic materials 0.000 claims 6
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005334612A JP5201790B2 (ja) | 2004-11-26 | 2005-11-18 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004342902 | 2004-11-26 | ||
| JP2004342902 | 2004-11-26 | ||
| JP2005334612A JP5201790B2 (ja) | 2004-11-26 | 2005-11-18 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012052983A Division JP2012151483A (ja) | 2004-11-26 | 2012-03-09 | 半導体装置の作製方法、及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006179874A JP2006179874A (ja) | 2006-07-06 |
| JP2006179874A5 true JP2006179874A5 (enExample) | 2008-12-04 |
| JP5201790B2 JP5201790B2 (ja) | 2013-06-05 |
Family
ID=36733640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005334612A Expired - Fee Related JP5201790B2 (ja) | 2004-11-26 | 2005-11-18 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5201790B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090009938A (ko) | 2006-05-25 | 2009-01-23 | 닛본 덴끼 가부시끼가이샤 | 금속 화합물층의 형성 방법, 반도체 장치의 제조 방법 및 금속 화합물층의 형성 장치 |
| JP5255793B2 (ja) * | 2006-07-21 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8034724B2 (en) | 2006-07-21 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7811911B2 (en) * | 2006-11-07 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7622386B2 (en) | 2006-12-06 | 2009-11-24 | International Business Machines Corporation | Method for improved formation of nickel silicide contacts in semiconductor devices |
| JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7922817B2 (en) | 2008-04-24 | 2011-04-12 | Memc Electronic Materials, Inc. | Method and device for feeding arsenic dopant into a silicon crystal growing apparatus |
| TWI535014B (zh) | 2010-11-11 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| EP3925004A4 (en) * | 2019-02-11 | 2023-03-08 | Sunrise Memory Corporation | VERTICAL THIN FILM TRANSISTOR AND USE AS BITLINE CONNECTOR FOR THREE DIMENSIONAL MEMORY ARRANGEMENTS |
| CN111969029B (zh) * | 2020-08-31 | 2023-07-25 | 江苏仕邦柔性电子研究院有限公司 | 一种用于oled显示面板的tft器件结构 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3325963B2 (ja) * | 1993-08-10 | 2002-09-17 | 株式会社東芝 | 薄膜トランジスタ |
| JP3377137B2 (ja) * | 1994-12-26 | 2003-02-17 | シャープ株式会社 | 半導体装置及びその製造方法、並びに薄膜トランジスタ及びその製造方法、並びに液晶表示装置 |
| KR100198621B1 (ko) * | 1995-12-26 | 1999-06-15 | 구본준 | 반도체소자의 실리사이드막 형성방법 |
| JPH1197691A (ja) * | 1997-09-18 | 1999-04-09 | Toshiba Corp | 薄膜トランジスタおよび接合構造 |
| JP2003051600A (ja) * | 2001-05-30 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JP2003282879A (ja) * | 2002-03-22 | 2003-10-03 | Sony Corp | 半導体装置の製造方法 |
| JP2004221115A (ja) * | 2003-01-09 | 2004-08-05 | Seiko Epson Corp | 半導体装置およびその製造方法 |
-
2005
- 2005-11-18 JP JP2005334612A patent/JP5201790B2/ja not_active Expired - Fee Related
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