JP5186485B2 - 試験装置 - Google Patents
試験装置 Download PDFInfo
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- JP5186485B2 JP5186485B2 JP2009509082A JP2009509082A JP5186485B2 JP 5186485 B2 JP5186485 B2 JP 5186485B2 JP 2009509082 A JP2009509082 A JP 2009509082A JP 2009509082 A JP2009509082 A JP 2009509082A JP 5186485 B2 JP5186485 B2 JP 5186485B2
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- 238000012360 testing method Methods 0.000 title claims description 314
- 230000015654 memory Effects 0.000 claims description 19
- 238000005259 measurement Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/31813—Test pattern generators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequences
- G01R31/318385—Random or pseudo-random test pattern
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
- G01R31/318533—Reconfiguring for testing, e.g. LSSD, partitioning using scanning techniques, e.g. LSSD, Boundary Scan, JTAG
- G01R31/318544—Scanning methods, algorithms and patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
1.特願2007−089691 出願日 2007年03月29日
110 インターフェイス試験部
112 インターフェイス制御部
114 パターン発生部
116 タイミング発生部
118 インターフェイス判定部
120 入出力回路
122 ドライバ
124 コンパレータ
126 スイッチ
128 シフトレジスタ
130 スキャン試験部
132 加算部
134 シフトレジスタ
136 加算部
138 一致検出部
140 BIST試験部
150 電源試験部
152 電源判定部
154 電力測定部
160 電源供給部
170 結果処理部
200 被試験デバイス
202 入出力ピン
204 スキャンピン
206 BISTピン
208 電源ピン
209 制御ピン
210 インターフェイス回路
212 バッファメモリ
214 切替部
216 スイッチ
220 内部インターフェイス回路
230 内部回路
240 内蔵セルフテスト回路
250 電源部
Claims (6)
- デバイス内部の内部回路とデバイス外部との間で信号を受け渡す外部インターフェイス回路と、前記内部回路を試験する内蔵セルフテスト回路とを備える被試験デバイスを試験する試験装置であって、
前記外部インターフェイス回路を試験するための試験パターンを、前記外部インターフェイス回路に入力するパターン発生部と、
前記外部インターフェイス回路に前記試験パターンを折り返して出力させるインターフェイス制御部と、
前記外部インターフェイス回路が折り返して出力する前記試験パターンに基づいて、前記外部インターフェイス回路の良否を判定するインターフェイス判定部と、
前記内蔵セルフテスト回路を制御して、前記外部インターフェイス回路の試験と並行して前記内部回路を試験するBIST試験部と、
前記内部回路、および前記外部インターフェイス回路のいずれにも不良が検出されなかった場合に、前記被試験デバイスを良品と判定する結果処理部と
を備え、
前記外部インターフェイス回路は、複数の入出力ピンを有し、
前記インターフェイス制御部は、前記外部インターフェイス回路を試験する場合に、前記パターン発生部から前記試験パターンが入力される前記複数の入出力ピンのうち半分の入出力ピンと、前記試験パターンを折り返して出力すべき前記複数の入出力ピンのうち他の半分の入出力ピンとを前記被試験デバイスの内部で一対一に接続させ、
前記複数の入出力ピンのうち半分の入出力ピンには共通の試験パターンが入力される試験装置。 - 前記インターフェイス制御部は、前記外部インターフェイス回路を試験する場合に、前記外部インターフェイス回路と前記内部回路との間で信号を伝送する接続経路を切り離す
請求項1に記載の試験装置。 - 前記内部回路の試験と並行して、前記内部回路に電源電力を供給する電源供給部と、
前記電源供給部から前記被試験デバイスに供給される前記電源電力を測定する電力測定部と、
前記電力測定部が測定した前記電源電力に基づいて、前記被試験デバイスの良否を判定する電源判定部と
を更に備える
請求項1または2に記載の試験装置。 - 前記パターン発生部は、擬似ランダムパターンを前記試験パターンとして生成し、
前記インターフェイス判定部は、前記パターン発生部が出力した前記擬似ランダムパターンと、前記外部インターフェイス回路が折り返して出力する論理値パターンとが一致するか否かを判定する
請求項1から3のいずれか一項に記載の試験装置。 - 前記外部インターフェイス回路は、前記複数の入出力ピンに一対一に対応して設けられ、対応する前記入出力ピンに外部から入力されたデータを格納する複数のバッファメモリを有し、
前記インターフェイス制御部は、前記外部インターフェイス回路を試験する場合に、前記試験パターンが入力される前記入出力ピンに対応する前記複数のバッファメモリが格納したデータを、前記試験パターンを折り返して出力すべき前記入出力ピンを介して出力させる
請求項1に記載の試験装置。 - 前記外部インターフェイス回路は、それぞれの前記入出力ピンを、前記内部回路又は他の前記入出力ピンのいずれに接続するかを切り替える切替部を更に備え、
前記インターフェイス制御部は、前記外部インターフェイス回路を試験する場合に、前記パターン発生部から前記試験パターンが入力される前記入出力ピンと、前記試験パターンを折り返して出力すべき前記入出力ピンとを接続させる切替制御信号を前記切替部に入力する
請求項1に記載の試験装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009509082A JP5186485B2 (ja) | 2007-03-29 | 2008-03-21 | 試験装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007089691 | 2007-03-29 | ||
JP2007089691 | 2007-03-29 | ||
PCT/JP2008/055321 WO2008123156A1 (ja) | 2007-03-29 | 2008-03-21 | 試験装置及び電子デバイス |
JP2009509082A JP5186485B2 (ja) | 2007-03-29 | 2008-03-21 | 試験装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008123156A1 JPWO2008123156A1 (ja) | 2010-07-15 |
JP5186485B2 true JP5186485B2 (ja) | 2013-04-17 |
Family
ID=39830653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009509082A Active JP5186485B2 (ja) | 2007-03-29 | 2008-03-21 | 試験装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8299810B2 (ja) |
JP (1) | JP5186485B2 (ja) |
KR (1) | KR20090111324A (ja) |
CN (1) | CN101646954B (ja) |
DE (1) | DE112008000937T5 (ja) |
TW (1) | TWI378461B (ja) |
WO (1) | WO2008123156A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012013446A (ja) * | 2010-06-29 | 2012-01-19 | Advantest Corp | ピンエレクトロニクス回路およびそれを用いた試験装置 |
JP2012185036A (ja) * | 2011-03-04 | 2012-09-27 | Advantest Corp | 試験装置 |
WO2013060361A1 (en) * | 2011-10-25 | 2013-05-02 | Advantest (Singapore) Pte. Ltd. | Automatic test equipment |
KR101482940B1 (ko) * | 2013-09-24 | 2015-01-14 | 주식회사 아이에이 | 내장형 자체 진단 기능을 갖는 반도체 소자 및 이를 이용한 자체 진단 방법 |
JP6478562B2 (ja) * | 2013-11-07 | 2019-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10132860B2 (en) * | 2016-10-28 | 2018-11-20 | Nxp Usa, Inc. | Systems and methods for testing package assemblies |
KR102099355B1 (ko) * | 2018-11-26 | 2020-04-10 | 현대오트론 주식회사 | 집적회로 진단 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0862298A (ja) * | 1994-08-26 | 1996-03-08 | Nec Corp | 半導体集積回路および検査方法 |
JPH10111343A (ja) * | 1996-10-03 | 1998-04-28 | Oki Electric Ind Co Ltd | 集積回路 |
JP2002357642A (ja) * | 2001-06-04 | 2002-12-13 | Hitachi Ltd | スキャン機能付きセル、半導体集積回路のテスト回路及びテスト方法 |
WO2005111639A1 (ja) * | 2004-05-19 | 2005-11-24 | Advantest Corporation | 発振検出装置、及び試験装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001222897A (ja) | 2000-02-04 | 2001-08-17 | Advantest Corp | 半導体試験装置 |
JP3446124B2 (ja) * | 2001-12-04 | 2003-09-16 | 科学技術振興事業団 | 高速入出力装置を備えた半導体集積回路装置の試験方法及び試験装置 |
JP3544203B2 (ja) * | 2002-08-30 | 2004-07-21 | 沖電気工業株式会社 | テスト回路、そのテスト回路を内蔵した半導体集積回路装置、及びそのテスト方法 |
US6917215B2 (en) * | 2002-08-30 | 2005-07-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit and memory test method |
JP4871559B2 (ja) | 2005-09-27 | 2012-02-08 | コヴィディエン・アクチェンゲゼルシャフト | 冷却rfアブレーションニードル |
US7546504B2 (en) * | 2006-08-11 | 2009-06-09 | International Business Machines Corporation | System and method for advanced logic built-in self test with selection of scan channels |
US7679391B2 (en) * | 2008-07-11 | 2010-03-16 | Advantest Corporation | Test equipment and semiconductor device |
-
2008
- 2008-03-21 KR KR1020097016918A patent/KR20090111324A/ko not_active Application Discontinuation
- 2008-03-21 CN CN2008800101984A patent/CN101646954B/zh not_active Expired - Fee Related
- 2008-03-21 WO PCT/JP2008/055321 patent/WO2008123156A1/ja active Application Filing
- 2008-03-21 JP JP2009509082A patent/JP5186485B2/ja active Active
- 2008-03-21 DE DE112008000937T patent/DE112008000937T5/de not_active Withdrawn
- 2008-03-28 TW TW097111564A patent/TWI378461B/zh active
-
2009
- 2009-07-30 US US12/512,933 patent/US8299810B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0862298A (ja) * | 1994-08-26 | 1996-03-08 | Nec Corp | 半導体集積回路および検査方法 |
JPH10111343A (ja) * | 1996-10-03 | 1998-04-28 | Oki Electric Ind Co Ltd | 集積回路 |
JP2002357642A (ja) * | 2001-06-04 | 2002-12-13 | Hitachi Ltd | スキャン機能付きセル、半導体集積回路のテスト回路及びテスト方法 |
WO2005111639A1 (ja) * | 2004-05-19 | 2005-11-24 | Advantest Corporation | 発振検出装置、及び試験装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200901212A (en) | 2009-01-01 |
JPWO2008123156A1 (ja) | 2010-07-15 |
US8299810B2 (en) | 2012-10-30 |
CN101646954A (zh) | 2010-02-10 |
DE112008000937T5 (de) | 2010-02-11 |
TWI378461B (en) | 2012-12-01 |
WO2008123156A1 (ja) | 2008-10-16 |
CN101646954B (zh) | 2013-07-24 |
US20100026329A1 (en) | 2010-02-04 |
KR20090111324A (ko) | 2009-10-26 |
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