JP5180012B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP5180012B2
JP5180012B2 JP2008226583A JP2008226583A JP5180012B2 JP 5180012 B2 JP5180012 B2 JP 5180012B2 JP 2008226583 A JP2008226583 A JP 2008226583A JP 2008226583 A JP2008226583 A JP 2008226583A JP 5180012 B2 JP5180012 B2 JP 5180012B2
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JP
Japan
Prior art keywords
substrate
light
layer
emitting device
vapor deposition
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Expired - Fee Related
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JP2008226583A
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English (en)
Japanese (ja)
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JP2009087930A (ja
JP2009087930A5 (https=
Inventor
吉晴 平形
寿雄 池田
浩平 横山
陽輔 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008226583A priority Critical patent/JP5180012B2/ja
Publication of JP2009087930A publication Critical patent/JP2009087930A/ja
Publication of JP2009087930A5 publication Critical patent/JP2009087930A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008226583A 2007-09-13 2008-09-04 発光装置の作製方法 Expired - Fee Related JP5180012B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008226583A JP5180012B2 (ja) 2007-09-13 2008-09-04 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007237493 2007-09-13
JP2007237493 2007-09-13
JP2008226583A JP5180012B2 (ja) 2007-09-13 2008-09-04 発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012107224A Division JP5244996B2 (ja) 2007-09-13 2012-05-09 照明装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009087930A JP2009087930A (ja) 2009-04-23
JP2009087930A5 JP2009087930A5 (https=) 2011-09-22
JP5180012B2 true JP5180012B2 (ja) 2013-04-10

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Family Applications (2)

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JP2008226583A Expired - Fee Related JP5180012B2 (ja) 2007-09-13 2008-09-04 発光装置の作製方法
JP2012107224A Expired - Fee Related JP5244996B2 (ja) 2007-09-13 2012-05-09 照明装置の作製方法

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JP2012107224A Expired - Fee Related JP5244996B2 (ja) 2007-09-13 2012-05-09 照明装置の作製方法

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Country Link
US (1) US20090075214A1 (https=)
JP (2) JP5180012B2 (https=)
KR (1) KR20090028413A (https=)

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US8153201B2 (en) 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
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US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
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US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
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US8182863B2 (en) 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US7932112B2 (en) * 2008-04-14 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101629637B1 (ko) * 2008-05-29 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법 및 발광장치의 제조방법
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US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
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KR20150003570A (ko) * 2013-07-01 2015-01-09 삼성디스플레이 주식회사 전사용 도너 기판 및 유기 발광 표시 장치의 제조 방법
KR20150007740A (ko) * 2013-07-12 2015-01-21 삼성디스플레이 주식회사 전사용 도너 기판 및 유기 발광 표시 장치의 제조 방법
KR20150056112A (ko) * 2013-11-14 2015-05-26 삼성디스플레이 주식회사 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법
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KR20150109013A (ko) * 2014-03-18 2015-10-01 삼성디스플레이 주식회사 유기막 패턴 형성용 마스크, 이를 이용한 유기막 패턴 형성 방법 및 유기 발광 표시 장치의 제조 방법
KR20160003363A (ko) * 2014-06-30 2016-01-11 삼성디스플레이 주식회사 도너마스크 및 유기발광 디스플레이 장치 제조방법
KR102325208B1 (ko) 2014-08-12 2021-11-12 삼성디스플레이 주식회사 도너마스크, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
KR20160030002A (ko) 2014-09-05 2016-03-16 삼성디스플레이 주식회사 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법
WO2016063743A1 (ja) 2014-10-23 2016-04-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
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US9685349B2 (en) * 2015-10-08 2017-06-20 The United States Of America, As Represented By The Secretary Of The Navy Laser-induced forming and transfer of shaped metallic interconnects
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CN111443539B (zh) * 2020-04-10 2023-04-11 京东方科技集团股份有限公司 一种显示基板及显示装置

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Also Published As

Publication number Publication date
US20090075214A1 (en) 2009-03-19
JP2009087930A (ja) 2009-04-23
JP5244996B2 (ja) 2013-07-24
KR20090028413A (ko) 2009-03-18
JP2012178357A (ja) 2012-09-13

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