JP5151375B2 - 固体撮像装置およびその製造方法および撮像装置 - Google Patents

固体撮像装置およびその製造方法および撮像装置 Download PDF

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JP5151375B2
JP5151375B2 JP2007259501A JP2007259501A JP5151375B2 JP 5151375 B2 JP5151375 B2 JP 5151375B2 JP 2007259501 A JP2007259501 A JP 2007259501A JP 2007259501 A JP2007259501 A JP 2007259501A JP 5151375 B2 JP5151375 B2 JP 5151375B2
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film
oxide
semiconductor substrate
peripheral circuit
imaging device
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Expired - Fee Related
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JP2007259501A
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JP2009088430A (ja
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裕子 大岸
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Sony Corp
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Sony Corp
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Priority to JP2007259501A priority Critical patent/JP5151375B2/ja
Priority to US12/237,671 priority patent/US7939359B2/en
Priority to CN201110121898.4A priority patent/CN102201424B/zh
Priority to CN2008101614575A priority patent/CN101404288B/zh
Priority to CN2011101218293A priority patent/CN102176460B/zh
Priority to TW097137557A priority patent/TWI362109B/zh
Priority to KR1020080097079A priority patent/KR101530714B1/ko
Publication of JP2009088430A publication Critical patent/JP2009088430A/ja
Priority to US13/047,275 priority patent/US8343793B2/en
Priority to US13/655,896 priority patent/US8765515B2/en
Application granted granted Critical
Publication of JP5151375B2 publication Critical patent/JP5151375B2/ja
Priority to US14/289,213 priority patent/US9105547B2/en
Priority to US14/747,241 priority patent/US9509929B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
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    • H01L27/14643—Photodiode arrays; MOS imagers
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2007259501A 2007-10-03 2007-10-03 固体撮像装置およびその製造方法および撮像装置 Expired - Fee Related JP5151375B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2007259501A JP5151375B2 (ja) 2007-10-03 2007-10-03 固体撮像装置およびその製造方法および撮像装置
US12/237,671 US7939359B2 (en) 2007-10-03 2008-09-25 Solid state imaging device, method of manufacturing the same, and imaging apparatus
CN201110121898.4A CN102201424B (zh) 2007-10-03 2008-09-27 固态成像装置及其制造方法以及成像设备
CN2008101614575A CN101404288B (zh) 2007-10-03 2008-09-27 固态成像装置及其制造方法以及成像设备
CN2011101218293A CN102176460B (zh) 2007-10-03 2008-09-27 固态成像装置及其制造方法以及成像设备
TW097137557A TWI362109B (en) 2007-10-03 2008-09-30 Solid state imaging device, method of manufacturing the same, and imaging apparatus
KR1020080097079A KR101530714B1 (ko) 2007-10-03 2008-10-02 고체 촬상 소자 및 그 제조 방법, 그리고 촬상 장치
US13/047,275 US8343793B2 (en) 2007-10-03 2011-03-14 Solid state imaging device, method of manufacturing the same, and imaging apparatus
US13/655,896 US8765515B2 (en) 2007-10-03 2012-10-19 Solid state imaging device, method of manufacturing the same, and imaging apparatus
US14/289,213 US9105547B2 (en) 2007-10-03 2014-05-28 Solid state imaging device, method of manufacturing the same, and imaging apparatus
US14/747,241 US9509929B2 (en) 2007-10-03 2015-06-23 Solid state imaging device, method of manufacturing the same, and imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007259501A JP5151375B2 (ja) 2007-10-03 2007-10-03 固体撮像装置およびその製造方法および撮像装置

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JP2009088430A JP2009088430A (ja) 2009-04-23
JP5151375B2 true JP5151375B2 (ja) 2013-02-27

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US (5) US7939359B2 (zh)
JP (1) JP5151375B2 (zh)
KR (1) KR101530714B1 (zh)
CN (3) CN102176460B (zh)
TW (1) TWI362109B (zh)

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US20130063636A1 (en) 2013-03-14
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