JP5148086B2 - 有機薄膜トランジスタ表示板 - Google Patents

有機薄膜トランジスタ表示板 Download PDF

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Publication number
JP5148086B2
JP5148086B2 JP2006221910A JP2006221910A JP5148086B2 JP 5148086 B2 JP5148086 B2 JP 5148086B2 JP 2006221910 A JP2006221910 A JP 2006221910A JP 2006221910 A JP2006221910 A JP 2006221910A JP 5148086 B2 JP5148086 B2 JP 5148086B2
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JP
Japan
Prior art keywords
thin film
film transistor
interlayer insulating
electrode
organic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006221910A
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English (en)
Japanese (ja)
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JP2007053380A5 (enExample
JP2007053380A (ja
Inventor
保 成 金
▲ムン▼ 杓 洪
容 旭 李
俊 鶴 呉
根 圭 宋
承 奐 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050075596A external-priority patent/KR101189274B1/ko
Priority claimed from KR1020060037566A external-priority patent/KR101240653B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007053380A publication Critical patent/JP2007053380A/ja
Publication of JP2007053380A5 publication Critical patent/JP2007053380A5/ja
Application granted granted Critical
Publication of JP5148086B2 publication Critical patent/JP5148086B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
JP2006221910A 2005-08-18 2006-08-16 有機薄膜トランジスタ表示板 Active JP5148086B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2005-0075596 2005-08-18
KR1020050075596A KR101189274B1 (ko) 2005-08-18 2005-08-18 유기 박막 트랜지스터 표시판 및 그 제조 방법
KR1020060037566A KR101240653B1 (ko) 2006-04-26 2006-04-26 박막 트랜지스터 표시판 및 그 제조 방법
KR10-2006-0037566 2006-04-26

Publications (3)

Publication Number Publication Date
JP2007053380A JP2007053380A (ja) 2007-03-01
JP2007053380A5 JP2007053380A5 (enExample) 2009-09-24
JP5148086B2 true JP5148086B2 (ja) 2013-02-20

Family

ID=37766637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006221910A Active JP5148086B2 (ja) 2005-08-18 2006-08-16 有機薄膜トランジスタ表示板

Country Status (4)

Country Link
US (1) US7994494B2 (enExample)
JP (1) JP5148086B2 (enExample)
CN (1) CN1917226B (enExample)
TW (1) TW200711145A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101187205B1 (ko) * 2006-06-09 2012-10-02 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US8569665B2 (en) * 2006-10-17 2013-10-29 Meyer Intellectual Properties Limited Cookware with tarnish protected copper exterior
US20080258138A1 (en) * 2007-04-23 2008-10-23 Samsung Electronics Co., Ltd. Thin film transistor array panel and fabricating method thereof, and flat panel display with the same
US8017940B2 (en) 2007-05-25 2011-09-13 Panasonic Corporation Organic transistor, method of forming organic transistor and organic EL display with organic transistor
KR101302636B1 (ko) * 2007-08-30 2013-09-03 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 이의 제조 방법
KR101287968B1 (ko) 2008-11-25 2013-07-19 엘지디스플레이 주식회사 전기영동 표시장치 및 그 제조 방법
KR101213494B1 (ko) * 2010-05-12 2012-12-20 삼성디스플레이 주식회사 입체형 표시장치, 플렉서블 표시장치 및 상기 표시장치들의 제조방법
CN102593322B (zh) * 2012-02-21 2014-12-10 广东德豪润达电气股份有限公司 用于led芯片荧光粉层涂布的围堰及制作方法和应用
US8766244B2 (en) * 2012-07-27 2014-07-01 Creator Technology B.V. Pixel control structure, array, backplane, display, and method of manufacturing
JP7168497B2 (ja) * 2019-03-20 2022-11-09 スタンレー電気株式会社 液晶表示素子
JP7621808B2 (ja) * 2021-01-27 2025-01-27 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100242438B1 (ko) * 1996-08-30 2000-02-01 윤종용 능동 행렬형 액정 표시 장치
KR0182014B1 (ko) * 1995-08-23 1999-05-01 김광호 액정 표시 장치용 박막트랜지스터 기판
JP2916524B2 (ja) * 1996-06-07 1999-07-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JPH10339885A (ja) * 1997-06-09 1998-12-22 Hitachi Ltd アクティブマトリクス型液晶表示装置
JPH1115016A (ja) * 1997-06-20 1999-01-22 Hitachi Ltd 液晶表示装置
JP3580092B2 (ja) 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
CN1155930C (zh) 1997-08-21 2004-06-30 精工爱普生株式会社 有源矩阵型显示装置
JPH11258632A (ja) * 1998-03-13 1999-09-24 Toshiba Corp 表示装置用アレイ基板
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法
AU2001275542A1 (en) * 2000-06-16 2001-12-24 The Penn State Research Foundation Aqueous-based photolithography on organic materials
JP4410951B2 (ja) * 2001-02-27 2010-02-10 Ｎｅｃ液晶テクノロジー株式会社 パターン形成方法および液晶表示装置の製造方法
KR20040043116A (ko) * 2001-04-10 2004-05-22 사르노프 코포레이션 유기 박막 트랜지스터를 이용한 고성능 액티브 매트릭스화소 제공방법 및 제공장치
JP4841751B2 (ja) 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
JP4704629B2 (ja) * 2001-09-07 2011-06-15 株式会社リコー 薄膜トランジスタ及びその製造方法
KR100484591B1 (ko) * 2001-12-29 2005-04-20 엘지.필립스 엘시디 주식회사 능동행렬 유기전기발광소자 및 그의 제조 방법
KR20040007823A (ko) 2002-07-11 2004-01-28 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
KR100884541B1 (ko) * 2002-12-10 2009-02-18 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JP4149793B2 (ja) * 2002-12-17 2008-09-17 シャープ株式会社 有機半導体装置およびその製造方法
JP4296788B2 (ja) * 2003-01-28 2009-07-15 パナソニック電工株式会社 有機電界効果トランジスタおよびその製造方法、集積回路装置
JP2004241774A (ja) * 2003-02-03 2004-08-26 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法とそのためのマスク
KR100980015B1 (ko) * 2003-08-19 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP2005072053A (ja) * 2003-08-27 2005-03-17 Sharp Corp 有機半導体装置およびその製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
KR101189218B1 (ko) * 2006-04-12 2012-10-09 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법

Also Published As

Publication number Publication date
CN1917226B (zh) 2010-05-12
US20070040171A1 (en) 2007-02-22
US7994494B2 (en) 2011-08-09
JP2007053380A (ja) 2007-03-01
CN1917226A (zh) 2007-02-21
TW200711145A (en) 2007-03-16

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