TW200711145A - Organic thin film transistor array panel and method for manufacturing the same - Google Patents

Organic thin film transistor array panel and method for manufacturing the same

Info

Publication number
TW200711145A
TW200711145A TW095130504A TW95130504A TW200711145A TW 200711145 A TW200711145 A TW 200711145A TW 095130504 A TW095130504 A TW 095130504A TW 95130504 A TW95130504 A TW 95130504A TW 200711145 A TW200711145 A TW 200711145A
Authority
TW
Taiwan
Prior art keywords
gate
electrode
data line
opening
thin film
Prior art date
Application number
TW095130504A
Other languages
English (en)
Inventor
Bo-Sung Kim
Mun-Pyo Hong
Yong-Uk Lee
Joon-Hak Oh
Keun-Kyu Song
Seung-Hwan Cho
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050075596A external-priority patent/KR101189274B1/ko
Priority claimed from KR1020060037566A external-priority patent/KR101240653B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200711145A publication Critical patent/TW200711145A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
TW095130504A 2005-08-18 2006-08-18 Organic thin film transistor array panel and method for manufacturing the same TW200711145A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050075596A KR101189274B1 (ko) 2005-08-18 2005-08-18 유기 박막 트랜지스터 표시판 및 그 제조 방법
KR1020060037566A KR101240653B1 (ko) 2006-04-26 2006-04-26 박막 트랜지스터 표시판 및 그 제조 방법

Publications (1)

Publication Number Publication Date
TW200711145A true TW200711145A (en) 2007-03-16

Family

ID=37766637

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130504A TW200711145A (en) 2005-08-18 2006-08-18 Organic thin film transistor array panel and method for manufacturing the same

Country Status (4)

Country Link
US (1) US7994494B2 (zh)
JP (1) JP5148086B2 (zh)
CN (1) CN1917226B (zh)
TW (1) TW200711145A (zh)

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KR101187205B1 (ko) * 2006-06-09 2012-10-02 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US8569665B2 (en) * 2006-10-17 2013-10-29 Meyer Intellectual Properties Limited Cookware with tarnish protected copper exterior
US20080258138A1 (en) * 2007-04-23 2008-10-23 Samsung Electronics Co., Ltd. Thin film transistor array panel and fabricating method thereof, and flat panel display with the same
US8017940B2 (en) 2007-05-25 2011-09-13 Panasonic Corporation Organic transistor, method of forming organic transistor and organic EL display with organic transistor
KR101302636B1 (ko) * 2007-08-30 2013-09-03 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 이의 제조 방법
KR101287968B1 (ko) 2008-11-25 2013-07-19 엘지디스플레이 주식회사 전기영동 표시장치 및 그 제조 방법
KR101213494B1 (ko) * 2010-05-12 2012-12-20 삼성디스플레이 주식회사 입체형 표시장치, 플렉서블 표시장치 및 상기 표시장치들의 제조방법
CN102593322B (zh) * 2012-02-21 2014-12-10 广东德豪润达电气股份有限公司 用于led芯片荧光粉层涂布的围堰及制作方法和应用
US8766244B2 (en) * 2012-07-27 2014-07-01 Creator Technology B.V. Pixel control structure, array, backplane, display, and method of manufacturing
JP7168497B2 (ja) * 2019-03-20 2022-11-09 スタンレー電気株式会社 液晶表示素子

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JP2916524B2 (ja) * 1996-06-07 1999-07-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JPH10339885A (ja) * 1997-06-09 1998-12-22 Hitachi Ltd アクティブマトリクス型液晶表示装置
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KR100484591B1 (ko) * 2001-12-29 2005-04-20 엘지.필립스 엘시디 주식회사 능동행렬 유기전기발광소자 및 그의 제조 방법
KR20040007823A (ko) 2002-07-11 2004-01-28 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
US6821811B2 (en) * 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
KR100884541B1 (ko) * 2002-12-10 2009-02-18 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JP4149793B2 (ja) * 2002-12-17 2008-09-17 シャープ株式会社 有機半導体装置およびその製造方法
JP4296788B2 (ja) * 2003-01-28 2009-07-15 パナソニック電工株式会社 有機電界効果トランジスタおよびその製造方法、集積回路装置
JP2004241774A (ja) * 2003-02-03 2004-08-26 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法とそのためのマスク
KR100980015B1 (ko) * 2003-08-19 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP2005072053A (ja) * 2003-08-27 2005-03-17 Sharp Corp 有機半導体装置およびその製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
KR101189218B1 (ko) * 2006-04-12 2012-10-09 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JP2007053380A (ja) 2007-03-01
JP5148086B2 (ja) 2013-02-20
CN1917226B (zh) 2010-05-12
US7994494B2 (en) 2011-08-09
US20070040171A1 (en) 2007-02-22
CN1917226A (zh) 2007-02-21

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