JP5137835B2 - 低雑音半導体光検出器 - Google Patents
低雑音半導体光検出器 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 70
- 239000000969 carrier Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 37
- 229910052732 germanium Inorganic materials 0.000 description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Description
米国政府は、NSF Award DMI−0450487により、本発明に対する特定の権利を有している。
これらのすべての漏れ電流源が、入射する光によって生成される光電流と対抗し、したがって信号と対抗して信号対雑音比を小さくしている。
添付の図面は、本発明の概念を図解するためのものであり、スケール通りではないことを理解されたい。
以上、デバイスをp−n−pとして説明したが、ドーピングを適切に選択することにより、対応するn−p−n実施態様も同様に実践的であることを理解されたい。
以上、デバイスをp−nとして説明したが、ドーピングを適切に選択することにより、対応するn−p実施態様も同様に実践的であることを理解されたい。
また、本発明の範囲には、図6に類似した、すべての極性が逆極性の対応するデバイスが同じく包含されていることを理解されたい。
1)ボディが、パッシベートされていない表面(またはその一部)と第1の領域の間の経路に、第1の接合とは逆極性の第2のp−n接合を形成するための第3のドープ領域を備えていること、
2)半導体ボディのパッシベートされていない表面部分に隣接する領域が、パッシベートされていない表面のキャリア生成を抑制するために高度にドープされていること、および
3)高度にドープされた半導体が、半導体表面のパッシベートされていない部分に隣接する誘電体の周囲に該誘電体に接触して配置され、それによりパッシベートされていない表面に蓄積層または反転層を形成していること
のうちの1つまたは複数によって、ボディ表面のパッシベートされていない第2の部分からの漏れ電流を最小化するように適合されている。
[1]ジー・マシニ(G.Masini)、エル・コーラス(L.Colace)、ジー・アッサント(G.Assanto)、エイチ・シー・ルアン(H.−C.Luan)およびエル・シー・キマーリング(L.C.Kimmerling)「近赤外線のための高性能Si上p−i−n Ge光検出器、モデルから立証へ」(IEEE Trans.Electron Devices、第48巻、第6号、1092頁、2001年)
[2]ジェイ・オー(J.Oh)、ジェイ・シー・キャンベル(J.C.Campbell)、エス・ジー・トーマス(S.G.Thomas)、ビー・ブハラタン(B.Bharatan)、アール・トーマ(R.Thoma)、シー・ジャスパー(C.Jasper)、アール・イー・ジョーンズ(R.E.Jones)およびティー・イー・ジルクル(T.E.Zirkle)「傾斜SiGeバッファ層を使用してSi基板上に製造されたインターディジタルGe p−i−n光検出器」(IEEE Journal of Quantum Electronics、第38巻、第9号、1238頁、2002年)
[3]GPDゲルマニウム光検出器データ・シート、デバイスGM8VHR
[4]ジャドソン・テクノロジー・ゲルマニウム光検出器データ・シートPB1600
[5]エイチ・シャン(H.Shang)、エイチ・オコム−シュミット(H.Okom−Schmidt)、ケイ・ケイ・チャン(K.K.Chang)、エム・コペル(M.Copel)、ジェイ・オット(J.Ott)、ピー・エム・コズロウスキー(P.M.Kozlowski)、エス・イー・スティーン(S.E.Steen)、エス・エー・コーデス(S.A.Cordes)、エイチ・エス・ピー・ウォン(H.−S.P.Wong)、イー・シー・ジョーンズ(E.C.Jones)およびダブリュー・イー・ヘンシュ(W.E.Haensch)「薄いGe窒化酸化膜ゲート誘電体を備えた高移動度p−チャネルGe MOSFET」(in IEDM Tech.Digest、2002年、441〜444頁)
Claims (7)
- 誘電材料によって実質的に取り囲まれた表面を有する半導体材料のボディを備えた低雑音光検出器であって、
前記表面が、パッシベートされた第1の部分およびパッシベートされていない第2の部分を備え、
前記ボディが、第1の導電タイプ(pまたはn)にドープされた第1の領域と、第2の導電タイプ(nまたはp)にドープされた、前記第1の領域の周囲の、前記第1の領域と第1のp−n接合を形成している第2の領域と、前記第1の導電タイプ(pまたはn)にドープされた、前記第2の領域の周囲の、前記第2の領域と第2のp−n接合を形成している第3の領域とを備え、
前記第1および第2のp−n接合が、パッシベートされた前記表面の前記第1の部分の交差領域で前記ボディの前記表面と交差し、
光によって生成される電流を集電し、かつ、前記第1および第2のp−n接合をバイアスするために、前記第1の領域、前記第2の領域および前記第3の領域にそれぞれオーミック接触し、それにより、逆極性の接合によって、前記半導体表面の前記パッシベートされていない部分に生成されるキャリアの前記第1の領域への到達が防止される低雑音光検出器。 - 前記半導体のボディの前記第1の領域がp型導電にドープされ、前記第2の領域がn型導電にドープされ、前記第3の領域がp型導電にドープされた、請求項1に記載の光検出器。
- 前記半導体のボディの前記第1の領域がn型導電にドープされ、前記第2の領域がp型導電にドープされ、前記第3の領域がn型導電にドープされた、請求項1に記載の光検出器。
- 前記半導体材料のボディが、パッシベート誘電体で実質的に覆われた表面部分を備え、前記第1、第2および第3の領域に対するコンタクトが前記パッシベートされた表面に構築された、請求項1に記載の光検出器。
- 前記第2の領域のドーピングに勾配が付けられ、それにより、前記第2の領域に生成される光生成キャリアが前記第1の領域に対するコンタクトによって優先的に集められる、請求項1に記載の光検出器。
- 前記コンタクトによって覆われるのが、重くドープされた接触領域の露出面積の30%未満である、請求項1に記載の光検出器。
- 空胴を有する誘電体層を提供するステップと、
前記第1の導電タイプを有する前記半導体ボディを前記空胴に形成するステップと、
誘電体層を使用して前記半導体ボディの露出表面をパッシベートするステップと、
前記第2の領域を前記半導体ボディに注入ドーピングするステップと、
前記第1の領域を前記第2の領域に注入ドーピングするステップと、
金属コンタクトを形成するステップと
を含む、請求項1に記載の光検出器を製造する方法。
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US11/210,223 | 2005-08-23 | ||
US11/210,223 US7288825B2 (en) | 2002-12-18 | 2005-08-23 | Low-noise semiconductor photodetectors |
PCT/US2006/031880 WO2007024575A2 (en) | 2005-08-23 | 2006-08-15 | Low-noise semiconductor photodetectors |
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JP2009506543A JP2009506543A (ja) | 2009-02-12 |
JP5137835B2 true JP5137835B2 (ja) | 2013-02-06 |
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US (3) | US7288825B2 (ja) |
EP (1) | EP1917676A2 (ja) |
JP (1) | JP5137835B2 (ja) |
KR (1) | KR20080041704A (ja) |
CN (1) | CN101385119A (ja) |
TW (1) | TW200717785A (ja) |
WO (1) | WO2007024575A2 (ja) |
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2005
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- 2006-08-15 CN CNA2006800383695A patent/CN101385119A/zh active Pending
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- 2006-08-15 EP EP06801556A patent/EP1917676A2/en not_active Withdrawn
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WO2007024575A3 (en) | 2008-10-09 |
TW200717785A (en) | 2007-05-01 |
US20120025082A1 (en) | 2012-02-02 |
JP2009506543A (ja) | 2009-02-12 |
US20080128849A1 (en) | 2008-06-05 |
KR20080041704A (ko) | 2008-05-13 |
US7288825B2 (en) | 2007-10-30 |
WO2007024575A2 (en) | 2007-03-01 |
EP1917676A2 (en) | 2008-05-07 |
US8035186B2 (en) | 2011-10-11 |
CN101385119A (zh) | 2009-03-11 |
US8766393B2 (en) | 2014-07-01 |
US20060060932A1 (en) | 2006-03-23 |
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