TW200717785A - Low-noise semiconductor photodetectors - Google Patents

Low-noise semiconductor photodetectors

Info

Publication number
TW200717785A
TW200717785A TW095131023A TW95131023A TW200717785A TW 200717785 A TW200717785 A TW 200717785A TW 095131023 A TW095131023 A TW 095131023A TW 95131023 A TW95131023 A TW 95131023A TW 200717785 A TW200717785 A TW 200717785A
Authority
TW
Taiwan
Prior art keywords
passivated
junctions
doped
passivated surface
low
Prior art date
Application number
TW095131023A
Other languages
English (en)
Inventor
Conor S Rafferty
Clifford Alan King
Original Assignee
Noble Device Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noble Device Technologies Corp filed Critical Noble Device Technologies Corp
Publication of TW200717785A publication Critical patent/TW200717785A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW095131023A 2005-08-23 2006-08-23 Low-noise semiconductor photodetectors TW200717785A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/210,223 US7288825B2 (en) 2002-12-18 2005-08-23 Low-noise semiconductor photodetectors

Publications (1)

Publication Number Publication Date
TW200717785A true TW200717785A (en) 2007-05-01

Family

ID=37772157

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131023A TW200717785A (en) 2005-08-23 2006-08-23 Low-noise semiconductor photodetectors

Country Status (7)

Country Link
US (3) US7288825B2 (zh)
EP (1) EP1917676A2 (zh)
JP (1) JP5137835B2 (zh)
KR (1) KR20080041704A (zh)
CN (1) CN101385119A (zh)
TW (1) TW200717785A (zh)
WO (1) WO2007024575A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512954B (zh) * 2013-03-18 2015-12-11 Lite On Singapore Pte Ltd 堆疊光二極體結構及其光感測器

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598582B2 (en) * 2007-06-13 2009-10-06 The Boeing Company Ultra low dark current pin photodetector
KR101000941B1 (ko) * 2008-10-27 2010-12-13 한국전자통신연구원 게르마늄 광 검출기 및 그 형성방법
WO2011066554A2 (en) * 2009-11-30 2011-06-03 Atonometrics, Inc. I-v measurement system for photovoltaic modules
US20120326260A1 (en) * 2011-06-21 2012-12-27 William French Photodiode that incorporates a charge balanced set of alternating n and p doped semiconductor regions
CN102263128B (zh) * 2011-08-12 2014-04-09 淄博美林电子有限公司 一种igbt
US8975715B2 (en) 2011-09-14 2015-03-10 Infineon Technologies Ag Photodetector and method for manufacturing the same
US8916873B2 (en) 2011-09-14 2014-12-23 Infineon Technologies Ag Photodetector with controllable spectral response
CN103515465B (zh) * 2012-06-29 2016-03-30 英飞凌科技股份有限公司 光电探测器及其制造方法
DE102012216814A1 (de) * 2012-09-19 2014-03-20 Robert Bosch Gmbh Infrarot-Fotosensor
CN106255900A (zh) * 2014-04-30 2016-12-21 模拟技术公司 用于成像模式的探测器阵列
DE202014104087U1 (de) * 2014-09-01 2014-09-09 Infineon Technologies Ag Integrierte Schaltung mit Hohlraum-basierter elektrischer Isolation einer Fotodiode
ITUB20169957A1 (it) * 2016-01-13 2017-07-13 Lfoundry Srl Metodo per fabbricare sensori nir cmos perfezionati
JP6387134B1 (ja) 2017-03-09 2018-09-05 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
EP3477710B1 (en) * 2017-10-26 2023-03-29 STMicroelectronics (Research & Development) Limited Avalanche photodiode and method of manufacturing the avalanche photodiode
FR3089062A1 (fr) * 2018-11-23 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives procede de fabrication d’au moins une photodiode planaire passivee a courant d’obscurité reduit
CN109950333B (zh) * 2019-04-01 2023-09-22 李正 球形盒状三维探测器及其制备方法
US11641003B2 (en) * 2019-12-03 2023-05-02 Northwestern University Methods of fabricating planar infrared photodetectors
DE102021109737A1 (de) * 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co. Ltd. Germaniumhaltiger photodetektor und verfahren zu seiner herstellung
US11600737B2 (en) * 2021-03-16 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof
US20230253435A1 (en) * 2022-02-08 2023-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Channel pattern design to improve carrier transfer efficiency
CN116154022B (zh) * 2023-03-14 2024-03-22 江南大学 一种双层SiO2隔离的光电二极管结构、阵列及制造方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318115A (en) * 1978-07-24 1982-03-02 Sharp Kabushiki Kaisha Dual junction photoelectric semiconductor device
JPS5526661A (en) * 1978-08-15 1980-02-26 Sharp Corp Photo-semiconductor device
US4355196A (en) * 1981-03-11 1982-10-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell having improved back surface reflector
JPS5952884A (ja) * 1982-09-18 1984-03-27 Fuji Electric Corp Res & Dev Ltd 放射線または光検出用半導体素子の製造方法
JPS6045076A (ja) 1983-08-22 1985-03-11 Nec Corp 半導体受光素子
JPS60151940A (ja) 1984-01-19 1985-08-10 Nec Corp 電子銃電極構体
JPS62172765A (ja) * 1986-01-24 1987-07-29 Sharp Corp 光−電圧変換装置
JP2778956B2 (ja) * 1987-02-03 1998-07-23 株式会社東芝 カプラ
US5189297A (en) 1988-08-29 1993-02-23 Santa Barbara Research Center Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same
JPH0394478A (ja) 1989-09-06 1991-04-19 Matsushita Electron Corp 半導体装置
JP3032027B2 (ja) 1991-03-05 2000-04-10 富士通株式会社 半導体受光素子及びその組立方法
JP3047385B2 (ja) * 1991-10-25 2000-05-29 住友電気工業株式会社 受光素子
EP0546797B1 (en) * 1991-12-09 1997-08-06 Sharp Kabushiki Kaisha Liquid crystal light valve and information processor having liquid crystal light valve
US5212395A (en) 1992-03-02 1993-05-18 At&T Bell Laboratories P-I-N photodiodes with transparent conductive contacts
KR100259063B1 (ko) * 1992-06-12 2000-06-15 김영환 Ccd 영상소자
JP3285939B2 (ja) 1992-07-24 2002-05-27 松下電工株式会社 照明器具
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
JP2730472B2 (ja) 1993-12-28 1998-03-25 日本電気株式会社 半導体受光素子
US5487204A (en) * 1994-11-28 1996-01-30 Nelson; Steven M. Windshield wiper with deicer
US5549762A (en) 1995-01-13 1996-08-27 International Rectifier Corporation Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers
JPH10144948A (ja) * 1996-11-06 1998-05-29 Yokogawa Electric Corp フォトダイオード
US5880482A (en) 1997-01-29 1999-03-09 The Board Of Trustees Of The University Of Illinios Low dark current photodetector
TW421850B (en) * 1997-02-28 2001-02-11 Int Rectifier Corp A process for fabricating semiconductor device in a silicon substrate of one conductive type
US5883421A (en) 1997-03-13 1999-03-16 University Pierre Et Marie Curie Photodetector based on buried junctions and a corresponding method of manufacture
US6606120B1 (en) * 1998-04-24 2003-08-12 Foveon, Inc. Multiple storage node full color active pixel sensors
EP0993052B1 (en) * 1998-09-28 2009-01-14 Sharp Kabushiki Kaisha Space solar cell
WO2001067518A1 (en) * 2000-03-09 2001-09-13 Koninklijke Philips Electronics N.V. Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor
IT1317199B1 (it) * 2000-04-10 2003-05-27 Milano Politecnico Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali
US6541836B2 (en) * 2001-02-21 2003-04-01 Photon Imaging, Inc. Semiconductor radiation detector with internal gain
US6597025B2 (en) * 2001-03-15 2003-07-22 Koninklijke Philips Electronics N.V. Light sensitive semiconductor component
JP2002289905A (ja) * 2001-03-28 2002-10-04 Kyocera Corp 半導体受光素子
JP2003158291A (ja) * 2001-11-20 2003-05-30 Matsushita Electric Ind Co Ltd 受光素子を内蔵する半導体装置及びその製造方法
JP2003282926A (ja) * 2002-03-22 2003-10-03 Mitsubishi Cable Ind Ltd 半導体受光素子
US8495180B2 (en) 2002-12-11 2013-07-23 Broadcom Corporation Server architecture supporting a personal media exchange network
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
US6846740B2 (en) 2003-06-14 2005-01-25 Intel Corporation Wafer-level quasi-planarization and passivation for multi-height structures
JP2005045125A (ja) * 2003-07-24 2005-02-17 Hamamatsu Photonics Kk 光検出素子の製造方法
TWI222219B (en) 2003-09-10 2004-10-11 Ind Tech Res Inst Semiconductor optical transistor
DE10352741B4 (de) * 2003-11-12 2012-08-16 Austriamicrosystems Ag Strahlungsdetektierendes optoelektronisches Bauelement, Verfahren zu dessen Herstellung und Verwendung
US7095006B2 (en) * 2003-12-16 2006-08-22 International Business Machines Corporation Photodetector with hetero-structure using lateral growth
US7687402B2 (en) * 2004-11-15 2010-03-30 Micron Technology, Inc. Methods of making optoelectronic devices, and methods of making solar cells
JP4276666B2 (ja) 2006-07-12 2009-06-10 株式会社バンダイ 排出機構および販売装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512954B (zh) * 2013-03-18 2015-12-11 Lite On Singapore Pte Ltd 堆疊光二極體結構及其光感測器

Also Published As

Publication number Publication date
WO2007024575A2 (en) 2007-03-01
EP1917676A2 (en) 2008-05-07
US7288825B2 (en) 2007-10-30
CN101385119A (zh) 2009-03-11
US20060060932A1 (en) 2006-03-23
JP2009506543A (ja) 2009-02-12
US8035186B2 (en) 2011-10-11
JP5137835B2 (ja) 2013-02-06
US8766393B2 (en) 2014-07-01
KR20080041704A (ko) 2008-05-13
US20120025082A1 (en) 2012-02-02
WO2007024575A3 (en) 2008-10-09
US20080128849A1 (en) 2008-06-05

Similar Documents

Publication Publication Date Title
TW200717785A (en) Low-noise semiconductor photodetectors
Lyu et al. High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si
WO2007126441A3 (en) Back-contact photovoltaic cells
US9429774B2 (en) Optic modulator and method of manufacturing the same
WO2010025391A3 (en) Integrated photodiode for semiconductor substrates
TW200638557A (en) Lateral current blocking light emitting diode and method for manufacturing the same
MY171189A (en) Solar cell having an emitter region with wide bandgap semiconductor material
TW200742106A (en) Photoelectric conversion device, manufacturing method thereof and semiconductor device
WO2006135443A3 (en) Back-contact photovoltaic cells
ATE500621T1 (de) Implementierung von lawinenfotodioden in (bi) cmos-verfahren
TW200642116A (en) Avalanch photo diode
WO2001059844A3 (en) Semiconductor device with high reverse breakdown voltage and method of manufacturing the same
JPWO2006046276A1 (ja) アバランシェフォトダイオード
WO2004036625A3 (en) Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
US9048310B2 (en) Graphene switching device having tunable barrier
JP5044394B2 (ja) 半導体層内に導電率が低減されている領域を形成する方法およびオプトエレクトロニクス半導体素子
RU2617281C2 (ru) Полупроводниковая структура, устройство с такой структурой и способ изготовления полупроводниковой структуры
TW200637020A (en) Photodetector
US6693024B2 (en) Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating
JP5746222B2 (ja) 光−電子デバイス
TW200505055A (en) Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof and methods of forming the same
CN110504330A (zh) 一种肖特基二极管及其制备方法
KR20030026495A (ko) 애벌랜치 포토다이오드
KR100520626B1 (ko) 핀 구조의 포토다이오드
WO2013090961A3 (de) Thermo-elektrisches-element