ATE500621T1 - Implementierung von lawinenfotodioden in (bi) cmos-verfahren - Google Patents
Implementierung von lawinenfotodioden in (bi) cmos-verfahrenInfo
- Publication number
- ATE500621T1 ATE500621T1 AT07760388T AT07760388T ATE500621T1 AT E500621 T1 ATE500621 T1 AT E500621T1 AT 07760388 T AT07760388 T AT 07760388T AT 07760388 T AT07760388 T AT 07760388T AT E500621 T1 ATE500621 T1 AT E500621T1
- Authority
- AT
- Austria
- Prior art keywords
- doped region
- semiconductor layer
- implementation
- avalanche photodiodes
- cmos processes
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Nuclear Medicine (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
- Amplifiers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74554906P | 2006-04-25 | 2006-04-25 | |
PCT/US2007/066316 WO2007127607A1 (en) | 2006-04-25 | 2007-04-10 | Implementation of avalanche photo diodes in (bi) cmos processes |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE500621T1 true ATE500621T1 (de) | 2011-03-15 |
Family
ID=38324002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07760388T ATE500621T1 (de) | 2006-04-25 | 2007-04-10 | Implementierung von lawinenfotodioden in (bi) cmos-verfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US7759650B2 (de) |
EP (1) | EP2013916B1 (de) |
JP (2) | JP5437791B2 (de) |
CN (2) | CN104538459A (de) |
AT (1) | ATE500621T1 (de) |
DE (1) | DE602007012854D1 (de) |
WO (1) | WO2007127607A1 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
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US8008741B2 (en) | 2006-07-03 | 2011-08-30 | Hamamatsu Photonics K.K. | Photodiode array |
US8188563B2 (en) * | 2006-07-21 | 2012-05-29 | The Regents Of The University Of California | Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector |
US8440495B2 (en) * | 2007-03-06 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing crosstalk in image sensors using implant technology |
DE102008011280B4 (de) * | 2008-02-27 | 2010-01-28 | Ketek Gmbh | Strahlungsempfangendes Halbleiterbauelement, Verfahren zum Betreiben und Verwendung desselben sowie Strahlungsdetektor und Halbleiteranordung mit dem Halbleiterbauelement |
US7659519B1 (en) * | 2008-06-04 | 2010-02-09 | Kotura, Inc. | System having reduced distance between scintillator and light sensor array |
EP2455985A3 (de) | 2008-07-10 | 2013-07-17 | STMicroelectronics (Research & Development) Limited | Verbesserungen von Einzelphoton-Avalanche-Dioden |
US8637875B2 (en) | 2008-07-11 | 2014-01-28 | The Regents Of The University Of California | Single photon IR detectors and their integration with silicon detectors |
US7898001B2 (en) * | 2008-12-03 | 2011-03-01 | Stmicroelectronics (Research & Development) Limited | Single photon detector and associated methods for making the same |
KR101776955B1 (ko) | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
US8476571B2 (en) * | 2009-12-22 | 2013-07-02 | Siemens Aktiengesellschaft | SiPM photosensor with early signal digitization |
US8729471B2 (en) * | 2010-07-30 | 2014-05-20 | Pulsetor, Llc | Electron detector including an intimately-coupled scintillator-photomultiplier combination, and electron microscope and X-ray detector employing same |
WO2012083983A1 (en) * | 2010-12-21 | 2012-06-28 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Silicon photoelectric multiplier with optical cross-talk suppression due to special properties of the substrate |
JP5246304B2 (ja) * | 2011-07-11 | 2013-07-24 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP5353965B2 (ja) * | 2011-07-11 | 2013-11-27 | ソニー株式会社 | 固体撮像装置の製造方法 |
WO2013007981A1 (en) | 2011-07-12 | 2013-01-17 | Isis Innovation Limited | Ion detector |
FR2978251B1 (fr) * | 2011-07-19 | 2014-04-18 | Saint Gobain Cristaux Et Detecteurs | Detecteur a scintillateur conique |
RU2014107914A (ru) | 2011-08-03 | 2015-09-10 | Конинклейке Филипс Н.В. | Режимы позиционночувствительного считывания для матриц цифровых кремниевых фотоэлектронных умножителей |
US8581188B2 (en) * | 2011-08-05 | 2013-11-12 | Pulsetor, Llc | Electron detector including one or more intimately-coupled scintillator-photomultiplier combinations, and electron microscope employing same |
KR101777225B1 (ko) * | 2011-12-16 | 2017-09-12 | 한국전자통신연구원 | 아발란치 포토다이오드 및 그의 제조방법 |
US8736008B2 (en) | 2012-01-04 | 2014-05-27 | General Electric Company | Photodiode array and methods of fabrication |
JP5535261B2 (ja) * | 2012-03-19 | 2014-07-02 | 株式会社東芝 | 固体撮像装置 |
JP5984617B2 (ja) * | 2012-10-18 | 2016-09-06 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5519827B2 (ja) * | 2013-05-13 | 2014-06-11 | ソニー株式会社 | 固体撮像装置及び電子機器 |
CN103887362B (zh) * | 2014-03-28 | 2016-08-17 | 重庆邮电大学 | 一种带有深n阱的np型cmos雪崩光电二极管 |
JP6193171B2 (ja) | 2014-04-11 | 2017-09-06 | 株式会社東芝 | 光検出器 |
KR101728054B1 (ko) * | 2014-10-02 | 2017-05-02 | 주식회사 아비즈알 | 방사선 검출기 어셈블리 |
US9606245B1 (en) | 2015-03-24 | 2017-03-28 | The Research Foundation For The State University Of New York | Autonomous gamma, X-ray, and particle detector |
JP6163511B2 (ja) * | 2015-04-16 | 2017-07-12 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
CN105845746B (zh) * | 2016-04-01 | 2017-06-13 | 西安电子科技大学 | 基于碳化硅PIN二极管结构的γ辐照闪烁体探测器 |
CN105789336B (zh) * | 2016-04-01 | 2017-06-20 | 西安电子科技大学 | 基于碳化硅PIN二极管结构的α辐照闪烁体探测器 |
CN105931952B (zh) * | 2016-05-17 | 2019-06-11 | 华润微电子(重庆)有限公司 | 一种雪崩二极管结构的制造方法 |
CN106129107B (zh) * | 2016-07-01 | 2019-07-09 | 电子科技大学 | 半导体结构、半导体组件及功率半导体器件 |
US10497818B2 (en) * | 2016-07-29 | 2019-12-03 | Canon Kabushiki Kaisha | Photodetection device and photodetection system |
JP7013120B2 (ja) * | 2016-07-29 | 2022-01-31 | キヤノン株式会社 | 光検出装置および光検出システム |
JP2018019040A (ja) * | 2016-07-29 | 2018-02-01 | キヤノン株式会社 | 光検出装置および光検出システム |
CN106298817A (zh) * | 2016-10-19 | 2017-01-04 | 天津大学 | 基于标准cmos工艺可变增益光电探测器及制备方法 |
JP6921508B2 (ja) * | 2016-11-29 | 2021-08-18 | キヤノン株式会社 | 光検出装置および光検出システム |
WO2018117485A1 (ko) * | 2016-12-19 | 2018-06-28 | 경희대학교산학협력단 | 실리콘 카바이드 기판 상에 형성된 트랜지스터를 포함하는 방사선 디텍터 |
KR101864963B1 (ko) * | 2016-12-19 | 2018-06-05 | 경희대학교 산학협력단 | 방사선 디텍터 및 그 제조 방법 |
CN109713062B (zh) * | 2018-12-24 | 2020-12-18 | 华中科技大学 | 一种硅雪崩光电探测芯片及其制备方法 |
WO2020198929A1 (en) * | 2019-03-29 | 2020-10-08 | Shenzhen Xpectvision Technology Co., Ltd. | Apparatuses for detecting radiation and their methods of making |
US11346924B2 (en) | 2019-12-09 | 2022-05-31 | Waymo Llc | SiPM with cells of different sizes |
JP2022039524A (ja) | 2020-08-28 | 2022-03-10 | 株式会社東芝 | 半導体装置 |
JP2022089651A (ja) * | 2020-12-04 | 2022-06-16 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および測距装置 |
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EP1625622A2 (de) | 2003-05-13 | 2006-02-15 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung mit einem feldformungsgebiet |
US6762473B1 (en) * | 2003-06-25 | 2004-07-13 | Semicoa Semiconductors | Ultra thin back-illuminated photodiode array structures and fabrication methods |
US8039882B2 (en) * | 2003-08-22 | 2011-10-18 | Micron Technology, Inc. | High gain, low noise photodiode for image sensors and method of formation |
DE102004041556B4 (de) * | 2004-08-27 | 2007-09-20 | Infineon Technologies Ag | Laterale Schottky-Diode und Verfahren zu ihrer Herstellung |
ATE514105T1 (de) * | 2005-04-22 | 2011-07-15 | Koninkl Philips Electronics Nv | Digitaler silicium-photovervielfacher für ein tof-pet |
-
2007
- 2007-04-10 US US12/298,206 patent/US7759650B2/en not_active Expired - Fee Related
- 2007-04-10 WO PCT/US2007/066316 patent/WO2007127607A1/en active Application Filing
- 2007-04-10 DE DE602007012854T patent/DE602007012854D1/de active Active
- 2007-04-10 CN CN201410700605.1A patent/CN104538459A/zh active Pending
- 2007-04-10 AT AT07760388T patent/ATE500621T1/de not_active IP Right Cessation
- 2007-04-10 EP EP07760388A patent/EP2013916B1/de not_active Not-in-force
- 2007-04-10 JP JP2009507887A patent/JP5437791B2/ja not_active Expired - Fee Related
- 2007-04-10 CN CNA2007800150789A patent/CN101432893A/zh active Pending
-
2013
- 2013-09-20 JP JP2013194906A patent/JP5771252B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101432893A (zh) | 2009-05-13 |
JP5437791B2 (ja) | 2014-03-12 |
JP5771252B2 (ja) | 2015-08-26 |
DE602007012854D1 (de) | 2011-04-14 |
WO2007127607A1 (en) | 2007-11-08 |
EP2013916B1 (de) | 2011-03-02 |
JP2009535821A (ja) | 2009-10-01 |
EP2013916A1 (de) | 2009-01-14 |
JP2014045198A (ja) | 2014-03-13 |
CN104538459A (zh) | 2015-04-22 |
US7759650B2 (en) | 2010-07-20 |
US20090065704A1 (en) | 2009-03-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |