JP5771252B2 - アバランシェフォトダイオード型放射線検出器 - Google Patents
アバランシェフォトダイオード型放射線検出器 Download PDFInfo
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Description
前記基板上に形成された半導体層であり:
前記基板に隣接するように配置された少なくとも1つのn型ドープト領域と、
前記基板に複数のpn接合を形成するよう、前記n型ドープト領域に隣接するように配置された複数のp型ドープト領域と、
を含む半導体層;
前記p型ドープト領域の各々を囲むように前記半導体層内に形成され、前記p型ドープト領域を貫通して前記n型ドープト領域中まで延在し、且つ材料を充填されたトレンチであり、前記pn接合の端部付近の曲率を低減し該端部付近での降伏を抑制するトレンチ;
前記n型ドープト領域に電気的に接触する少なくとも1つの導電性電極;及び
前記p型ドープト領域上に、それに光学的に結合されるように配置されたシンチレータ;
を有する放射線検出器。
2. 前記トレンチは実質的に垂直な側壁を有する、上記1に記載の放射線検出器。
3. 前記材料は、隣接し合う前記p型ドープト領域によって受光される光のクロスコンタミネーションを抑制する、上記1に記載の放射線検出器。
4. 撮像領域内の光子を検出するため、複数個の上記1に記載の放射線検出器を使用する医用撮像システム。
5. 複数個の上記1に記載の放射線検出器を含む診断用撮像システム。
6. 上記1に記載の放射線検出器から成る複数のリング;
前記検出器の出力をデジタル化し且つ該出力にタイムスタンプを付す変換器;
前記タイムスタンプを付されたデジタル出力から、検出された放射線イベントに含まれる同時発生対を決定する一致検出部;及び
決定された同時発生対によって定められるLORから画像を再構成する再構成システム;
を有するPET撮像システム。
7. 基板;
前記基板上に形成された半導体層であり:
前記基板に隣接するように配置されたn型ドープト領域と、
前記n型ドープト領域に隣接するように配置されたp型ドープト領域と、
を含む半導体層;
前記p型ドープト領域を囲むように前記半導体層内に形成され、前記p型ドープト領域を貫通して前記n型ドープト領域中まで延在し、且つ材料を充填されたトレンチであり、pn接合の端部において該pn接合の曲率を低減し、該端部での降伏を抑制するトレンチ;及び
前記n型ドープト領域に電気的に接触する少なくとも1つの導電性電極;
を有する半導体デバイス。
8. 前記トレンチは、前記pn接合において前記p型ドープト領域を突然に終端する実質的に垂直な側壁を有する、上記7に記載の半導体デバイス。
9. 前記n型ドープト領域及び前記p型ドープト領域は、イオン注入プロセスによって形成される、上記7に記載の半導体デバイス。
10. 前記材料は誘電体及び金属のうちの一方である、上記7に記載の半導体デバイス。
11. ガイガーモードで駆動されるアバランシェフォトダイオードである上記7に記載の半導体デバイス。
12. 前記トレンチは前記材料の堆積に先立って酸化されている、上記7に記載の半導体デバイス。
13. 前記トレンチ内の前記材料に隣接するように配置された、フォトダイオードを流れる電流を制限するクエンチ抵抗;
を更に含む上記7に記載の半導体デバイス。
14. 撮像領域内の光子を検出するため、上記7に記載の半導体デバイスを使用する医用撮像システム。
15. 前記半導体層上に、それに光学的に結合されるように配置されたシンチレータ;
を更に含む上記7に記載の半導体デバイス。
16. 複数の前記p型ドープト領域が前記n型ドープト領域上に配置され、且つ前記トレンチはこれら複数のp型ドープト領域の周りに延在している、上記7に記載の半導体デバイス。
17. 上記16に記載の半導体デバイス;及び
前記複数のp型ドープト領域に隣接して、それらに光学的に結合されるように配置されたシンチレータ;
を有する放射線検出器。
18. 共通基板上に、複数個の上記7に記載の半導体デバイスを含むフォトダイオードアレイ。
19. 基板;
前記基板上に形成された半導体層であり:
前記基板に隣接するように配置された少なくとも1つのn型ドープト領域と、
前記基板に複数のpn接合を形成するよう、前記n型ドープト領域に隣接するように配置された複数のp型ドープト領域と、
を含む半導体層;
前記p型ドープト領域の各々を囲むように前記半導体層内に形成され、前記p型ドープト領域を貫通して前記n型ドープト領域中まで延在し、且つ材料を充填されたトレンチであり、前記pn接合の端部付近の曲率を低減し該端部付近での降伏を抑制するトレンチ;及び
前記n型ドープト領域に電気的に接触する少なくとも1つの導電性電極;
を有するフォトダイオードアレイ。
20. 前記トレンチは実質的に垂直な側壁を有する、上記19に記載のフォトダイオードアレイ。
21. 前記材料は、隣接し合う前記p型ドープト領域によって受光される光のクロスコンタミネーションを抑制する、上記19に記載のフォトダイオードアレイ。
22. 前記p型ドープト領域上に、それに光学的に結合されるように配置された少なくとも1つのシンチレータ;
を更に含む上記19に記載のフォトダイオードアレイ。
23. 撮像領域内の光子を検出するため、複数個の上記19に記載のフォトダイオードアレイを使用する医用撮像システム。
24. 上記19に記載のフォトダイオードアレイに光学的に結合されたシンチレータ、
を有する放射線検出器。
25. 複数個の上記24に記載の放射線検出器を含む診断用撮像システム。
26. 上記12に記載の放射線検出器から成る複数のリング;
前記検出器の出力をデジタル化し且つ該出力にタイムスタンプを付す変換器;
前記タイムスタンプを付されたデジタル出力から、検出された放射線イベントに含まれる同時発生対を決定する一致検出部;及び
決定された同時発生対によって定められるLORから画像を再構成する再構成システム;
を有するPET撮像システム。
27. 検出された放射線イベントを表すアナログ信号を生成する複数の放射線検出器であり、各放射線検出器が、複数個の上記1に記載の半導体デバイスを含み、各半導体デバイスが光イベントを検出する、複数の放射線検出器;
前記半導体デバイスに光学的に結合された、前記検出された放射線イベントを前記光イベントに変換するシンチレーション結晶;
前記アナログ信号をデジタル化エネルギーへとデジタル化し、且つタイムスタンプを付す変換器;
前記検出された放射線イベントに含まれる同時発生対を決定する一致検出器;及び
前記検出された放射線イベントに含まれる前記同時発生対から、画像を再構成する再構成システム;
を有する医用撮像システム。
28. pn接合の端部での降伏が抑制される半導体デバイスを製造する方法であって:
基板上に半導体層を形成する工程;
前記半導体層内にトレンチを形成する工程;
前記トレンチを材料で充填する工程;及び
前記トレンチによって囲まれたp型ドープト領域と、該p型ドープト領域の下方のn型ドープト領域とを形成するよう、前記半導体層をドープする工程;
を有し、
前記トレンチは、前記p型ドープト領域を貫通して前記n型ドープト領域中まで延在している、
方法。
29. 前記n型ドープト領域に電気的に接触する少なくとも1つの導電性電極を形成する工程;
を更に含む上記28に記載の方法。
30. 前記p型ドープト領域に隣接させて、フォトダイオードの表面上にシンチレータを取り付ける工程;
を更に含む上記28に記載の方法。
31. 前記半導体層内に複数の前記p型ドープト領域を形成する工程であり、各p型ドープト領域がトレンチによって囲まれるように形成する工程;
を更に含む上記28に記載の方法。
32. 上記28に記載の方法に従って製造された半導体デバイス。
33. 上記28に記載の方法に従って製造された放射線検出器。
34. 複数個の上記33に記載の放射線検出器を含む診断用撮像システム。
Claims (1)
- 基板;
前記基板上に形成された半導体層であり:
前記基板に隣接するように配置された少なくとも1つのn型ドープト領域と、
前記基板に複数のpn接合を形成するよう、前記n型ドープト領域に隣接するように配置された複数のp型ドープト領域と、
を含む半導体層;
前記p型ドープト領域の各々を囲むように前記半導体層内に形成され、前記p型ドープト領域を貫通して前記n型ドープト領域中まで延在し、且つ酸化膜を介して導電性材料を充填されたトレンチ;
前記n型ドープト領域に電気的に接触する少なくとも1つの導電性電極;及び
前記p型ドープト領域上に、それに光学的に結合されるように配置されたシンチレータ;
を有し、
前記トレンチの端部での降伏の発生を回避するよう、前記トレンチに充填された前記導電性材料にバイアスが印加される、
ガイガーモードで駆動されるアバランシェフォトダイオード型放射線検出器。
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EP (1) | EP2013916B1 (ja) |
JP (2) | JP5437791B2 (ja) |
CN (2) | CN101432893A (ja) |
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2007
- 2007-04-10 DE DE602007012854T patent/DE602007012854D1/de active Active
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ATE500621T1 (de) | 2011-03-15 |
US7759650B2 (en) | 2010-07-20 |
EP2013916A1 (en) | 2009-01-14 |
CN101432893A (zh) | 2009-05-13 |
CN104538459A (zh) | 2015-04-22 |
WO2007127607A1 (en) | 2007-11-08 |
JP5437791B2 (ja) | 2014-03-12 |
JP2014045198A (ja) | 2014-03-13 |
DE602007012854D1 (de) | 2011-04-14 |
EP2013916B1 (en) | 2011-03-02 |
US20090065704A1 (en) | 2009-03-12 |
JP2009535821A (ja) | 2009-10-01 |
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