JPH0231153U - - Google Patents

Info

Publication number
JPH0231153U
JPH0231153U JP10950588U JP10950588U JPH0231153U JP H0231153 U JPH0231153 U JP H0231153U JP 10950588 U JP10950588 U JP 10950588U JP 10950588 U JP10950588 U JP 10950588U JP H0231153 U JPH0231153 U JP H0231153U
Authority
JP
Japan
Prior art keywords
light
receiving element
insulating layer
substrate
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10950588U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10950588U priority Critical patent/JPH0231153U/ja
Publication of JPH0231153U publication Critical patent/JPH0231153U/ja
Pending legal-status Critical Current

Links

JP10950588U 1988-08-20 1988-08-20 Pending JPH0231153U (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10950588U JPH0231153U (de) 1988-08-20 1988-08-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10950588U JPH0231153U (de) 1988-08-20 1988-08-20

Publications (1)

Publication Number Publication Date
JPH0231153U true JPH0231153U (de) 1990-02-27

Family

ID=31345809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10950588U Pending JPH0231153U (de) 1988-08-20 1988-08-20

Country Status (1)

Country Link
JP (1) JPH0231153U (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369273A (ja) * 1991-06-18 1992-12-22 Fujitsu Ltd 赤外線検知装置
JP2014045198A (ja) * 2006-04-25 2014-03-13 Koninklijke Philips Nv （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法
WO2014109158A1 (ja) * 2013-01-11 2014-07-17 株式会社ブイ・テクノロジー 光インターコネクション装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233851A (ja) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd 固体イメ−ジセンサ
JPS61139061A (ja) * 1984-12-11 1986-06-26 Hamamatsu Photonics Kk 半導体光検出装置
JPS63248159A (ja) * 1987-04-03 1988-10-14 Seiko Instr & Electronics Ltd 半導体受光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233851A (ja) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd 固体イメ−ジセンサ
JPS61139061A (ja) * 1984-12-11 1986-06-26 Hamamatsu Photonics Kk 半導体光検出装置
JPS63248159A (ja) * 1987-04-03 1988-10-14 Seiko Instr & Electronics Ltd 半導体受光装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369273A (ja) * 1991-06-18 1992-12-22 Fujitsu Ltd 赤外線検知装置
JP2014045198A (ja) * 2006-04-25 2014-03-13 Koninklijke Philips Nv （Ｂｉ）ＣＭＯＳプロセスによるアバランシェフォトダイオードの製造方法
WO2014109158A1 (ja) * 2013-01-11 2014-07-17 株式会社ブイ・テクノロジー 光インターコネクション装置
CN104919731A (zh) * 2013-01-11 2015-09-16 株式会社V技术 光互联装置

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