JP5746222B2 - 光−電子デバイス - Google Patents
光−電子デバイス Download PDFInfo
- Publication number
- JP5746222B2 JP5746222B2 JP2012552467A JP2012552467A JP5746222B2 JP 5746222 B2 JP5746222 B2 JP 5746222B2 JP 2012552467 A JP2012552467 A JP 2012552467A JP 2012552467 A JP2012552467 A JP 2012552467A JP 5746222 B2 JP5746222 B2 JP 5746222B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- type
- semiconductor material
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 91
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 70
- 229910052707 ruthenium Inorganic materials 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 234
- 230000000903 blocking effect Effects 0.000 description 51
- 239000002019 doping agent Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 239000011701 zinc Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000005524 hole trap Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002772 conduction electron Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NNUUVOODBYCARB-UHFFFAOYSA-N C(C)(C)[Ru](C1C=CC=C1)C(C)C Chemical compound C(C)(C)[Ru](C1C=CC=C1)C(C)C NNUUVOODBYCARB-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VZVOYVGKUIMIRF-UHFFFAOYSA-N C(C(C)C)[Ru](C1C=CC=C1)CC(C)C Chemical compound C(C(C)C)[Ru](C1C=CC=C1)CC(C)C VZVOYVGKUIMIRF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2226—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semiconductors with a specific doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Description
周囲の半導体層を通して流れる“リーク”電流を防ぐために役立つ従来技術の1つの方法は、活性デバイスの両側に1つまたは複数の“電流遮断”接合(または構造)を形成することを含む。典型的には、電流遮断接合は、異なってドープされた半導体層を使用して形成されたp−n接合であり、活性層を備えたヘテロ接合が、順方向バイアス内にある場合に、逆方向バイアス接合として機能するように設計される。電流遮断接合を備えた従来技術のレーザーデバイスの断面が、図1に示されており、これによって、デバイスの活性層3は、n−型InPバッファ層2および基板1の上にあり、p−型InP層4および7の下にあり、従って、ヘテロ接合を形成する。活性層の両側のすぐそばに、n−型層6の下のp−型層5がある。層7の上は、p型接点8、マスキング層9、および金属接点10である。p−n層5および6の配向は、層4および2に対して垂直に逆にされており、電流遮断接合は、ヘテロ接合に対して逆方向バイアス構造である。活性層を備えた順方向バイアス接合の両側に逆方向バイアス“電流遮断”接合を有することにより、電子およびホールが、活性層内に流しこまれ、光−電子デバイスの効率が増大する。
デバイスのキャパシタンスを低減させるための1つのアプローチは、前記逆方向バイアスp−n接合遮断層を、周囲の半導体層よりも高い抵抗を提供する1つまたは複数の半導体層で、置き換えることであった。このような高い抵抗の層は、しばしば、半−絶縁半導体と呼ばれ、キャパシタンス電圧(CV)プロファイリングを使用して測定された場合に、基本的にドープされていないように見える。半−絶縁半導体は、逆方向バイアス電流遮断接合の大きなキャパシタンスを有することなく、電流遮断を提供する。
これまでは、ルテニウム(Ru)ドープ半導体は、順方向および逆方向バイアスデバイスの両方に対する低キャパシタンス電流遮断層として使用されてきた。Ru−ドープInPは、有効なホールトラップであるが、程度の悪い電子トラップであることが、従来技術において示されている。材料中における関心は、Ruは、Znまたは他の一般的に使用されているp−型ドーパントとの相互拡散の課題による被害を受けないという事実から生じた。
さらに、Ru−InPの厚い層が、いまだ、モルフォロジーの課題による被害を受け、成長することが困難である。
1.サンプルのInGaAsキャップ層上にチタンおよび金を蒸着する。
2.10〜350μm異なる間隔の範囲で、約150μm×500μmの平面領域を有する一連の平行なパッドを残すように、金属および下部のInGaAsをパターニングおよびエッチングする。パッド間の空間は、サンプルBにおいてRuドープInP層の露出された表面、およびサンプルAにおいてSドープInP層の露出された表面を含んでいた。
3.鉄ドープ半−絶縁性基板に至る全ての周囲の成長されたInPを除去するように、各パッドの組の周囲のサンプルを再−パターニングし、エッチングする。
4.金属パッド間の抵抗を測定する。
本発明の第1実施形態は、図3に示されたデバイス構造と同様な断面を有し、図4に示される光電子デバイスである。このおよび他の実施形態は、光−電子デバイスであるが、本発明のデバイスは、電流遮断構造が必要とされる任意の電子デバイスでありうる。
本発明の第2実施形態は、本発明の第1実施形態に基づくものであり、以下において説明する付加的な特徴を備える。
本発明の第3実施形態は、本発明の第1および第2実施形態に基づくものであり、以下において説明する付加的な特徴を備える。図6は、本発明の第3実施形態によるデバイス構造の断面を示す。この実施形態は、第1および第2実施形態と類似しており、順方向バイアスの場合にデバイスのキャパシタンスを低減させるために、ドープされていない真性半導体材料の層119をさらに含む。従って、本発明の第3実施形態は、使用時に、10Gbit/s等のデータ速度で直接変調されることが可能なデバイスを提供する。真性層119の機能は、電流遮断構造内において、n層配列120とp層(複数可)105とを物理的に分離することであり、これにより、電流遮断構造の電流遮断p−n接合の幅を増大させる。
本発明の第4実施形態は、本発明の第1、第2および第3実施形態に基づくものであり、以下において説明する付加的な特徴を備える。
102 バッファ層
103 活性層
104 半導体材料層
105 半導体材料層
107 クラッド層
108 接触層
109 マスク層
110 接触層
117 半導体材料層
118 半導体材料層
Claims (4)
- 電流遮断構造を備えた光電子デバイスであって、
前記電流遮断構造が、
a)第1p−型半導体材料層と、
b)真性半導体材料と、
c)n−型ルテニウムドープリン化インジウム(Ru−InP)層を備えた半導体材料配列と、
d)第2p−型半導体材料層と、
を順に積層して備え、
前記半導体材料配列と、前記第1p−型半導体材料層と、が、前記真性半導体材料を介して第1p−n接合を形成し、
前記半導体材料配列と、前記第2p−型半導体材料層とが直接接して、前記第1p−n接合の一側に配置された第2p−n接合を形成し、
前記n−型ルテニウムドープリン化インジウム層が、0.6μm未満の厚さを有することを特徴とするデバイス。 - 前記半導体材料配列が、前記n−型ルテニウムドープリン化インジウム層と、1つまたは複数のさらなるn−型InP材料と、を含む層積層体である、請求項1に記載のデバイス。
- 前記n−型ルテニウムドープリン化インジウム層と、第1p−型半導体材料層と、が、前記第2p−n接合のnおよびp−型半導体材料層に実質的に対向する方向に配置された、請求項1に記載のデバイス。
- 前記第2p−n接合が、前記真性半導体材料に隣接する、請求項3に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1002088.1 | 2010-02-09 | ||
GBGB1002088.1A GB201002088D0 (en) | 2010-02-09 | 2010-02-09 | Opto-electronic device |
PCT/GB2011/050221 WO2011098797A2 (en) | 2010-02-09 | 2011-02-09 | Opto-electronic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013519241A JP2013519241A (ja) | 2013-05-23 |
JP5746222B2 true JP5746222B2 (ja) | 2015-07-08 |
Family
ID=42082693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012552467A Active JP5746222B2 (ja) | 2010-02-09 | 2011-02-09 | 光−電子デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US8847357B2 (ja) |
EP (1) | EP2526593B1 (ja) |
JP (1) | JP5746222B2 (ja) |
KR (1) | KR20120123123A (ja) |
CN (1) | CN103125054A (ja) |
GB (1) | GB201002088D0 (ja) |
WO (1) | WO2011098797A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013077797A (ja) * | 2011-09-16 | 2013-04-25 | Mitsubishi Electric Corp | 半導体レーザおよびその製造方法 |
JP2013182976A (ja) * | 2012-03-01 | 2013-09-12 | Mitsubishi Electric Corp | 埋め込み型光半導体素子 |
CA2968925C (en) * | 2014-12-03 | 2020-11-17 | Alpes Lasers Sa | Quantum cascade laser with current blocking layers |
DE102020120703A1 (de) * | 2020-08-05 | 2022-02-10 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Diodenlaser mit Stromblende |
CN113113519B (zh) * | 2021-03-26 | 2022-07-15 | 武汉光迅科技股份有限公司 | 半导体发光器件及其制作方法 |
CN113258442B (zh) * | 2021-07-14 | 2021-11-09 | 华芯半导体研究院(北京)有限公司 | 垂直腔面发射激光器及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0639875A1 (en) | 1993-07-12 | 1995-02-22 | BRITISH TELECOMMUNICATIONS public limited company | Electrical barrier structure for semiconductor device |
JP2776375B2 (ja) | 1996-06-20 | 1998-07-16 | 日本電気株式会社 | 半導体レーザ |
DE19747996C1 (de) | 1997-10-17 | 1999-03-04 | Armin Dadgar | Verfahren zur epitaktischen Herstellung von semiisolierenden III-V Verbindungshalbleitern |
US6664605B1 (en) * | 2000-03-31 | 2003-12-16 | Triquint Technology Holding Co. | Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs |
EP1251610B1 (en) | 2001-04-18 | 2006-06-28 | Nippon Telegraph and Telephone Corporation | Semiconductor optical device and the fabrication method |
JP3654435B2 (ja) | 2001-08-21 | 2005-06-02 | 日本電信電話株式会社 | 半導体光素子及びその製造方法 |
EP1300917A1 (en) | 2001-10-03 | 2003-04-09 | Agilent Technologies, Inc. (a Delaware corporation) | Semiconductor device with current confinement structure |
JP2004047743A (ja) * | 2002-07-12 | 2004-02-12 | Furukawa Electric Co Ltd:The | 光集積デバイス |
JP2006086199A (ja) * | 2004-09-14 | 2006-03-30 | Mitsubishi Electric Corp | 半導体光デバイス及び半導体光デバイスの製造方法 |
JP2007194363A (ja) * | 2006-01-18 | 2007-08-02 | Sony Corp | GaAs基板を用いたInP系半導体装置 |
JP2008053649A (ja) * | 2006-08-28 | 2008-03-06 | Mitsubishi Electric Corp | 埋め込み型半導体レーザ |
JP5451332B2 (ja) * | 2008-12-02 | 2014-03-26 | 日本オクラロ株式会社 | 光半導体装置 |
-
2010
- 2010-02-09 GB GBGB1002088.1A patent/GB201002088D0/en not_active Ceased
-
2011
- 2011-02-09 JP JP2012552467A patent/JP5746222B2/ja active Active
- 2011-02-09 KR KR1020127022790A patent/KR20120123123A/ko not_active Application Discontinuation
- 2011-02-09 EP EP11730725.6A patent/EP2526593B1/en active Active
- 2011-02-09 WO PCT/GB2011/050221 patent/WO2011098797A2/en active Application Filing
- 2011-02-09 CN CN2011800167288A patent/CN103125054A/zh active Pending
-
2012
- 2012-08-09 US US13/571,067 patent/US8847357B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2526593A2 (en) | 2012-11-28 |
US8847357B2 (en) | 2014-09-30 |
JP2013519241A (ja) | 2013-05-23 |
EP2526593B1 (en) | 2017-04-05 |
US20130200492A1 (en) | 2013-08-08 |
CN103125054A (zh) | 2013-05-29 |
KR20120123123A (ko) | 2012-11-07 |
GB201002088D0 (en) | 2010-03-24 |
WO2011098797A2 (en) | 2011-08-18 |
WO2011098797A3 (en) | 2011-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8938134B2 (en) | Hybrid optical modulator for photonic integrated circuit devices | |
JP4220688B2 (ja) | アバランシェホトダイオード | |
US8068526B2 (en) | Semiconductor optical device | |
US9640703B2 (en) | Avalanche photodiode | |
JP5746222B2 (ja) | 光−電子デバイス | |
US5880489A (en) | Semiconductor photodetector | |
US7855400B2 (en) | Semiconductor light detecting element and method for manufacturing the semiconductor light detecting element | |
US20160380023A1 (en) | Semiconductor optical device integrating photodiode with optical waveguide and method of forming the same | |
US6995454B2 (en) | Semiconductor optical integrated device having a light emitting portion, a modulation section and a separation portion | |
JP3828982B2 (ja) | 半導体受光素子 | |
WO2002007226A1 (fr) | Reseau de photo-dectecteurs | |
JP4861388B2 (ja) | アバランシェホトダイオード | |
US5789765A (en) | Photo diode providing high-linearity signal current in response to light receiving signal | |
KR100509355B1 (ko) | 포토 다이오드의 구조 및 제조 방법 | |
EP1372228A1 (en) | Integrated semiconductor laser and waveguide device | |
JP4985298B2 (ja) | アバランシェフォトダイオード | |
JP4173716B2 (ja) | 導波路型フォトダイオードおよびその製造方法 | |
TWI728694B (zh) | 混層複合式充電層累增崩潰光二極體 | |
JP2005005600A (ja) | 半導体受光素子 | |
US11749773B2 (en) | Avalanche photodiode and method for manufacturing same | |
CA2477989A1 (en) | A laser diode with a low absorption diode junction | |
Wang et al. | High-speed InGaAs PIN photodetector with planar buried heterostructure | |
KR20100071693A (ko) | 아발란치 포토 다이오드의 제조 방법 | |
JP4486603B2 (ja) | 半導体受光素子 | |
JP4284781B2 (ja) | Msm型フォトダイオード |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130813 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131120 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20131120 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140710 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140825 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20141107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150507 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5746222 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |