ITUB20169957A1 - Metodo per fabbricare sensori nir cmos perfezionati - Google Patents

Metodo per fabbricare sensori nir cmos perfezionati

Info

Publication number
ITUB20169957A1
ITUB20169957A1 ITUB2016A009957A ITUB20169957A ITUB20169957A1 IT UB20169957 A1 ITUB20169957 A1 IT UB20169957A1 IT UB2016A009957 A ITUB2016A009957 A IT UB2016A009957A IT UB20169957 A ITUB20169957 A IT UB20169957A IT UB20169957 A1 ITUB20169957 A1 IT UB20169957A1
Authority
IT
Italy
Prior art keywords
sensors
manufacturing
nir
cmos
nir cmos
Prior art date
Application number
ITUB2016A009957A
Other languages
English (en)
Inventor
Giovanni Margutti
Monte Andrea Del
Original Assignee
Lfoundry Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lfoundry Srl filed Critical Lfoundry Srl
Priority to ITUB2016A009957A priority Critical patent/ITUB20169957A1/it
Priority to US16/068,724 priority patent/US10256270B2/en
Priority to CN201680078627.6A priority patent/CN108886044B/zh
Priority to JP2018536723A priority patent/JP7009684B2/ja
Priority to PCT/EP2016/082948 priority patent/WO2017121630A1/en
Priority to EP16825446.4A priority patent/EP3403280B1/en
Priority to KR1020187023344A priority patent/KR20180103118A/ko
Publication of ITUB20169957A1 publication Critical patent/ITUB20169957A1/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689MOS based technologies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14645Colour imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
ITUB2016A009957A 2016-01-13 2016-01-13 Metodo per fabbricare sensori nir cmos perfezionati ITUB20169957A1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ITUB2016A009957A ITUB20169957A1 (it) 2016-01-13 2016-01-13 Metodo per fabbricare sensori nir cmos perfezionati
US16/068,724 US10256270B2 (en) 2016-01-13 2016-12-30 Method for manufacturing improved NIR CMOS sensors
CN201680078627.6A CN108886044B (zh) 2016-01-13 2016-12-30 用于制造改进的nir cmos传感器的方法
JP2018536723A JP7009684B2 (ja) 2016-01-13 2016-12-30 近赤外線cmosセンサの製造方法
PCT/EP2016/082948 WO2017121630A1 (en) 2016-01-13 2016-12-30 Method for manufacturing improved nir cmos sensors
EP16825446.4A EP3403280B1 (en) 2016-01-13 2016-12-30 Method for manufacturing improved nir cmos sensors
KR1020187023344A KR20180103118A (ko) 2016-01-13 2016-12-30 개선된 근적외선 cmos 센서의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2016A009957A ITUB20169957A1 (it) 2016-01-13 2016-01-13 Metodo per fabbricare sensori nir cmos perfezionati

Publications (1)

Publication Number Publication Date
ITUB20169957A1 true ITUB20169957A1 (it) 2017-07-13

Family

ID=55699773

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2016A009957A ITUB20169957A1 (it) 2016-01-13 2016-01-13 Metodo per fabbricare sensori nir cmos perfezionati

Country Status (7)

Country Link
US (1) US10256270B2 (it)
EP (1) EP3403280B1 (it)
JP (1) JP7009684B2 (it)
KR (1) KR20180103118A (it)
CN (1) CN108886044B (it)
IT (1) ITUB20169957A1 (it)
WO (1) WO2017121630A1 (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113035980A (zh) * 2021-03-10 2021-06-25 联合微电子中心有限责任公司 近红外图像传感器及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
FR3084523B1 (fr) 2018-07-27 2020-12-25 Soc Fr De Detecteurs Infrarouges Sofradir Dispositif de detection electromagnetique
JP7172389B2 (ja) * 2018-09-28 2022-11-16 株式会社ニコン 撮像素子、撮像装置、及び、撮像素子の製造方法
JP2021005655A (ja) * 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置および機器
US11652184B2 (en) 2019-08-28 2023-05-16 Artilux, Inc. Photo-detecting apparatus with low dark current
US20220020787A1 (en) * 2020-07-17 2022-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, semiconductor image sensor, and method of manufacturing the same
US20220376125A1 (en) * 2021-05-20 2022-11-24 Artilux, Inc. Optical-sensing apparatus
US11876110B2 (en) 2021-06-09 2024-01-16 Omnivision Technologies, Inc. SiGe photodiode for crosstalk reduction

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426069A (en) * 1992-04-09 1995-06-20 Dalsa Inc. Method for making silicon-germanium devices using germanium implantation
KR20060122257A (ko) * 2005-05-26 2006-11-30 매그나칩 반도체 유한회사 실리콘 기판상에서의 포토 다이오드 제조 방법 및 이미지센서의 제조 방법
US20090014764A1 (en) * 2007-07-12 2009-01-15 Stmicroelectronics Sa Image sensor with an improved sensitivity
US20140312386A1 (en) * 2009-09-02 2014-10-23 Pixart Imaging Incorporation Optoelectronic device having photodiodes for different wavelengths and process for making same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01112772A (ja) * 1987-10-27 1989-05-01 Fujitsu Ltd Mis型半導体装置
US6645831B1 (en) 2002-05-07 2003-11-11 Intel Corporation Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide
US7288825B2 (en) * 2002-12-18 2007-10-30 Noble Peak Vision Corp. Low-noise semiconductor photodetectors
US6809008B1 (en) * 2003-08-28 2004-10-26 Motorola, Inc. Integrated photosensor for CMOS imagers
US7157300B2 (en) 2004-11-19 2007-01-02 Sharp Laboratories Of America, Inc. Fabrication of thin film germanium infrared sensor by bonding to silicon wafer
KR100610480B1 (ko) * 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 광 특성을 향상시킬 수 있는 이미지센서 및 그 제조 방법
US7008813B1 (en) 2005-02-28 2006-03-07 Sharp Laboratories Of America, Inc.. Epitaxial growth of germanium photodetector for CMOS imagers
JP4992446B2 (ja) 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
US7442599B2 (en) 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
JP2013162077A (ja) 2012-02-08 2013-08-19 Toshiba Corp 固体撮像装置
CN103000650B (zh) * 2012-12-10 2015-07-29 复旦大学 近红外-可见光可调图像传感器及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426069A (en) * 1992-04-09 1995-06-20 Dalsa Inc. Method for making silicon-germanium devices using germanium implantation
KR20060122257A (ko) * 2005-05-26 2006-11-30 매그나칩 반도체 유한회사 실리콘 기판상에서의 포토 다이오드 제조 방법 및 이미지센서의 제조 방법
US20090014764A1 (en) * 2007-07-12 2009-01-15 Stmicroelectronics Sa Image sensor with an improved sensitivity
US20140312386A1 (en) * 2009-09-02 2014-10-23 Pixart Imaging Incorporation Optoelectronic device having photodiodes for different wavelengths and process for making same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113035980A (zh) * 2021-03-10 2021-06-25 联合微电子中心有限责任公司 近红外图像传感器及其制备方法
CN113035980B (zh) * 2021-03-10 2022-04-15 联合微电子中心有限责任公司 近红外图像传感器及其制备方法

Also Published As

Publication number Publication date
US10256270B2 (en) 2019-04-09
CN108886044B (zh) 2023-05-23
WO2017121630A1 (en) 2017-07-20
EP3403280B1 (en) 2020-04-01
JP7009684B2 (ja) 2022-01-26
EP3403280A1 (en) 2018-11-21
US20190027532A1 (en) 2019-01-24
KR20180103118A (ko) 2018-09-18
JP2019510365A (ja) 2019-04-11
CN108886044A (zh) 2018-11-23

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