FR3044824B1 - Transistor sbfet ameliore et procede de fabrication correspondant - Google Patents

Transistor sbfet ameliore et procede de fabrication correspondant Download PDF

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Publication number
FR3044824B1
FR3044824B1 FR1561963A FR1561963A FR3044824B1 FR 3044824 B1 FR3044824 B1 FR 3044824B1 FR 1561963 A FR1561963 A FR 1561963A FR 1561963 A FR1561963 A FR 1561963A FR 3044824 B1 FR3044824 B1 FR 3044824B1
Authority
FR
France
Prior art keywords
sbfet
transistor
manufacturing
improved
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1561963A
Other languages
English (en)
Other versions
FR3044824A1 (fr
Inventor
Louis HUTIN
Julien BORREL
Yves Morand
Fabrice Nemouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics SA, STMicroelectronics Crolles 2 SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1561963A priority Critical patent/FR3044824B1/fr
Priority to US15/372,930 priority patent/US9911827B2/en
Publication of FR3044824A1 publication Critical patent/FR3044824A1/fr
Application granted granted Critical
Publication of FR3044824B1 publication Critical patent/FR3044824B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
FR1561963A 2015-12-08 2015-12-08 Transistor sbfet ameliore et procede de fabrication correspondant Active FR3044824B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1561963A FR3044824B1 (fr) 2015-12-08 2015-12-08 Transistor sbfet ameliore et procede de fabrication correspondant
US15/372,930 US9911827B2 (en) 2015-12-08 2016-12-08 SBFET transistor and corresponding fabrication process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1561963 2015-12-08
FR1561963A FR3044824B1 (fr) 2015-12-08 2015-12-08 Transistor sbfet ameliore et procede de fabrication correspondant

Publications (2)

Publication Number Publication Date
FR3044824A1 FR3044824A1 (fr) 2017-06-09
FR3044824B1 true FR3044824B1 (fr) 2018-05-04

Family

ID=55182449

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1561963A Active FR3044824B1 (fr) 2015-12-08 2015-12-08 Transistor sbfet ameliore et procede de fabrication correspondant

Country Status (2)

Country Link
US (1) US9911827B2 (fr)
FR (1) FR3044824B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200046837A (ko) * 2018-10-25 2020-05-07 엘지디스플레이 주식회사 트랜지스터 및 전자장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2749977B1 (fr) * 1996-06-14 1998-10-09 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
JP3833903B2 (ja) 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
EP1683193A1 (fr) 2003-10-22 2006-07-26 Spinnaker Semiconductor, Inc. Dispositif mosfet a barriere de schottky dynamique et procede de fabrication de celui-ci
WO2007109658A2 (fr) * 2006-03-20 2007-09-27 Rochester Institute Of Technology Circuits cmos avec source/drain partages et procedes associes
US8178939B2 (en) * 2009-06-21 2012-05-15 Sematech, Inc. Interfacial barrier for work function modification of high performance CMOS devices

Also Published As

Publication number Publication date
US20170162672A1 (en) 2017-06-08
FR3044824A1 (fr) 2017-06-09
US9911827B2 (en) 2018-03-06

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