JP6151266B2 - Hgcdte上に自己配置された、制御されたヘテロ構造を有する赤外線撮像器用p−nダイオード - Google Patents
Hgcdte上に自己配置された、制御されたヘテロ構造を有する赤外線撮像器用p−nダイオード Download PDFInfo
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- 229910052793 cadmium Inorganic materials 0.000 claims description 147
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 147
- 239000002019 doping agent Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 55
- 238000009792 diffusion process Methods 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 51
- 238000002161 passivation Methods 0.000 claims description 28
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052785 arsenic Inorganic materials 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 229910052753 mercury Inorganic materials 0.000 claims description 11
- 230000003213 activating effect Effects 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 34
- 239000002344 surface layer Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- 238000001994 activation Methods 0.000 description 15
- 230000004913 activation Effects 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 150000002730 mercury Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
第1のカドミウム濃度を有する第1の部分と、
第1のカドミウム濃度より高い第2のカドミウム濃度を有し、第1の部分と共にヘテロ構造を形成する第2の部分または高濃度部と、
高濃度部内に位置し、第1の部分にまで延び、第1の部分のうちn型にドープされてベースプレートと呼ばれる部分と共にp/n接合を形成するp+型ドープゾーンまたはp型ドープゾーンと、
を備える。
a)n型不純物ドナーを含み第1のカドミウム濃度を有するHg1−xCdxTeにより形成されてベースプレートと呼ばれる基板内にアクセプタドーパントをイオン注入する工程と、
b)基板内に注入されたドーパントを拡散および活性化させて、基板内に標準のドープゾーン形状を有するp+型ドープゾーンを規定する工程と、
c)工程b)の前または後に、ベースプレートおよびp+型ドープゾーン上に、元素の1つがカドミウムCdであるパッシベーション層5を堆積して、ダイオードを保護しダイオードからの水銀の脱離を制限する工程と、
d)基板内に初期状態から存在した、またはドーパントを拡散および活性化させる工程中に形成された水銀ギャップを充填する工程と、
を順に含む。工程d)の後、水銀ギャップにより起こったp型ドーピングは消失する。ドーパントを拡散および活性化させる工程によって人工的にp型にドープされたベースプレートは再びn型になり、p+型ドープゾーンと共にp+/n接合またはp/n接合を形成する。
ここでDCd+は所与の温度におけるカドミウム拡散係数であり、pは正孔密度値であり、niはベースプレート1の真性キャリア密度である。
Claims (12)
- 基板と、前記基板の一方側に配置されたn型にドープされたHg1-xCdxTeに基づくベースプレートを含む少なくとも1つのヘテロ構造p/nダイオードを有するデバイスであって、前記ベースプレートは各ダイオードにおいて、
第1のカドミウム濃度を有する第1の部分(4)と、
前記第1のカドミウム濃度より高い第2のカドミウム濃度を有し、前記第1の部分(4)と共にヘテロ構造を形成する第2の部分(11)と、
前記第2の部分(11)を含み、前記第1の部分(4)にまで延び、前記第1の部分(4)のn型ドープ部分と共にp/n接合(10)を形成するp+型ドープゾーン(9)と、
を備え、
前記第2の部分(11)が前記p+型ドープゾーン(9)内のみに位置しており、実質的に一定のカドミウム濃度を有するウェル(12)を形成する、デバイス。 - 前記ウェル(12)の底部が前記p/n接合(10)から実質的に一定の中間距離(D)にある、請求項1に記載のデバイス。
- 少なくとも2つの互いに隣接するヘテロ構造p/nダイオードを備え、前記2つの互いに隣接するダイオードの前記ウェル(12)が分離しており前記2つのダイオードのうち一方における前記中間距離(D)が前記ダイオードのうち他方における前記中間距離(D)と実質的に等しい、請求項2に記載のデバイス。
- 前記p+型ドープゾーン(9)がアクセプタドーパント(8)でドープされている、請求項1から3のいずれかひとつに記載のデバイス。
- 前記アクセプタドーパント(8)がヒ素である、請求項4に記載のデバイス。
- 前記ベースプレート(1)がHg1-xCdxTeにより形成され、xが0.15と0.95との間の値を有し、前記第1のカドミウム濃度を意味する、請求項1から5のいずれかひとつに記載のデバイス。
- 前記ウェル(12)がHg1-yCdyTeにより形成され、yが0.15より大きく0.95以下の値を有し、xの値より厳密に大きく、前記第2のカドミウム濃度を意味する、請求項6に記載のデバイス。
- 少なくとも1つのヘテロ構造p/nダイオードを有するデバイスを製造する方法であって、
a)基板の一方側に配置され、n型不純物ドナーを含み第1のカドミウム濃度を有するHg1−xCdxTeにより形成されたベースプレート(1)内にアクセプタドーパント(8)をイオン注入する工程と、
b)前記ベースプレート内で前記ドーパント(8)を拡散および活性化させて、前記ベースプレート内にp+型ドープゾーン(9)を規定する工程と、
c)前記工程b)の前または後に、前記ベースプレート(1)および前記p+型ドープゾーン(9)上に、元素の1つがカドミウムCdであるパッシベーション層(5)を堆積する工程と、
d)前記パッシベーション層(5)から前記p+型ドープゾーン(9)にカドミウムを選択的に相互拡散させ、それにより、第1のカドミウム濃度を有するHg 1-x Cd x Teにより形成された第1の部分(4)と、実質的に一定で前記第1のカドミウム濃度よりも高い第2のカドミウム濃度を有するHg 1-y Cd y Teにより形成された第2の部分(11)(以下「ウェル(12)」という)とを形成し、前記ウェル(12)が前記p+型ドープゾーン(9)内に位置するようにする工程と、
e)前記ベースプレート内に初期状態から存在した、または前記ドーパントを拡散および活性化させる工程中に形成された水銀ギャップを充填し、それにより前記ベースプレート(1)がn型にドープされ、p+型ドープゾーン(9)と共にp+/n接合(10)を形成する工程と、
を順に含む、方法。 - 前記カドミウムを選択的に相互拡散させる工程が、100℃を超える温度で1分を超える時間に亘って選択的拡散アニーリングを行うことを含む、請求項8に記載の方法。
- 前記アクセプタドーパント(8)がヒ素である、請求項8または9に記載の方法。
- 前記ウェル(12)が界面(以下「ヘテロ結合(3)」という)を形成する境界をp/n接合(10)から離れて有し、前記方法が複数のp/nダイオードを同時に製造するものであって、前記ウェル(12)の底部にある前記ヘテロ結合(3)が、前記方法によって製造される全ダイオード内の前記p+型ドープゾーン(9)内において前記p/n接合(10)から実質的に同一の中間距離(D)にある、請求項8から10のいずれかひとつに記載の方法。
- 前記パッシベーション層(5)を堆積する工程の前に、前記基板(101)の全体が前記第1のカドミウム濃度を有している、請求項8から11のいずれかひとつに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1103617A FR2983351B1 (fr) | 2011-11-28 | 2011-11-28 | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
FR1103617 | 2011-11-28 | ||
PCT/EP2012/073629 WO2013079446A1 (fr) | 2011-11-28 | 2012-11-26 | DIODE P/N A HETEROSTRUCTURE CONTRÔLEE AUTOPOSITIONNEE SUR HgCdTe POUR IMAGEURS INFRAROUGES |
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JP2015504607A JP2015504607A (ja) | 2015-02-12 |
JP6151266B2 true JP6151266B2 (ja) | 2017-06-21 |
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JP2014542878A Active JP6151266B2 (ja) | 2011-11-28 | 2012-11-26 | Hgcdte上に自己配置された、制御されたヘテロ構造を有する赤外線撮像器用p−nダイオード |
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US (1) | US9178101B2 (ja) |
EP (1) | EP2786425B1 (ja) |
JP (1) | JP6151266B2 (ja) |
KR (1) | KR102064542B1 (ja) |
CN (1) | CN103959482B (ja) |
FR (1) | FR2983351B1 (ja) |
IL (1) | IL232856A (ja) |
IN (1) | IN2014MN00998A (ja) |
RU (1) | RU2618483C2 (ja) |
WO (1) | WO2013079446A1 (ja) |
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FR2983351B1 (fr) | 2011-11-28 | 2014-01-24 | Commissariat Energie Atomique | Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges |
CN103855007A (zh) * | 2012-11-30 | 2014-06-11 | 中国科学院微电子研究所 | P型mosfet的制造方法 |
CN103855013A (zh) * | 2012-11-30 | 2014-06-11 | 中国科学院微电子研究所 | N型mosfet的制造方法 |
FR3000609B1 (fr) | 2012-12-31 | 2015-01-30 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode |
FR3020176B1 (fr) * | 2014-04-22 | 2017-09-29 | Commissariat Energie Atomique | Matrice de photodiodes en cdhgte |
FR3021807B1 (fr) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | Matrice de photodiodes mesa a ftm amelioree |
FR3023976B1 (fr) | 2014-07-16 | 2017-11-17 | Commissariat Energie Atomique | Matrice de photodiodes cdhgte a faible bruit |
FR3027452B1 (fr) * | 2014-10-21 | 2016-12-09 | Commissariat Energie Atomique | Procede de fabrication d'une photodiode a faible bruit |
FR3042310B1 (fr) * | 2015-10-12 | 2018-10-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium |
FR3050572B1 (fr) | 2016-04-26 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication |
FR3053837B1 (fr) | 2016-07-08 | 2018-08-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure du type photodiode a avalanche et procede de fabrication d'une telle structure |
FR3089063A1 (fr) | 2018-11-27 | 2020-05-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photodiode sam à multiplication d’un seul type de porteurs dans une région à multicouche périodique |
FR3109244B1 (fr) | 2020-04-09 | 2022-04-01 | Commissariat Energie Atomique | Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace |
IL297009A (en) | 2020-04-09 | 2022-12-01 | Commissariat Energie Atomique | A process for the production of a light detector device with low noise in a mercury-cadmium-telluride substrate |
FR3113781B1 (fr) | 2020-08-25 | 2022-12-16 | Commissariat Energie Atomique | PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe. |
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2011
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- 2012-11-26 JP JP2014542878A patent/JP6151266B2/ja active Active
- 2012-11-26 CN CN201280058391.1A patent/CN103959482B/zh active Active
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- 2012-11-26 EP EP12790573.5A patent/EP2786425B1/fr active Active
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EP2786425B1 (fr) | 2016-03-02 |
US20140319580A1 (en) | 2014-10-30 |
FR2983351B1 (fr) | 2014-01-24 |
KR20140098838A (ko) | 2014-08-08 |
FR2983351A1 (fr) | 2013-05-31 |
WO2013079446A1 (fr) | 2013-06-06 |
US9178101B2 (en) | 2015-11-03 |
IL232856A0 (en) | 2014-07-31 |
EP2786425A1 (fr) | 2014-10-08 |
JP2015504607A (ja) | 2015-02-12 |
KR102064542B1 (ko) | 2020-01-09 |
RU2014126434A (ru) | 2016-01-27 |
CN103959482A (zh) | 2014-07-30 |
IL232856A (en) | 2017-03-30 |
RU2618483C2 (ru) | 2017-05-03 |
CN103959482B (zh) | 2016-10-12 |
IN2014MN00998A (ja) | 2015-04-24 |
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