FR3113781B1 - PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe. - Google Patents

PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe. Download PDF

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Publication number
FR3113781B1
FR3113781B1 FR2008678A FR2008678A FR3113781B1 FR 3113781 B1 FR3113781 B1 FR 3113781B1 FR 2008678 A FR2008678 A FR 2008678A FR 2008678 A FR2008678 A FR 2008678A FR 3113781 B1 FR3113781 B1 FR 3113781B1
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FR
France
Prior art keywords
substrate
cadmium
etching mask
structured coating
cdhgte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2008678A
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English (en)
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FR3113781A1 (fr
Inventor
François Boulard
Jean-Paul Chamonal
Clément Lobre
Florent Rochette
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR2008678A priority Critical patent/FR3113781B1/fr
Priority to CN202180034195.XA priority patent/CN115516646A/zh
Priority to IL297009A priority patent/IL297009A/en
Priority to EP21723326.1A priority patent/EP4133532B1/fr
Priority to US17/995,605 priority patent/US20230155043A1/en
Priority to PCT/FR2021/050587 priority patent/WO2021205102A1/fr
Publication of FR3113781A1 publication Critical patent/FR3113781A1/fr
Application granted granted Critical
Publication of FR3113781B1 publication Critical patent/FR3113781B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type

Abstract

Procédé de fabrication d’un dispositif de photo-détection, qui comporte les étapes suivantes : - réalisation d’un revêtement structuré (122) riche en cadmium, sur un substrat (110) en CdxHg1-xTe, et à l’aide d’un premier masque de gravure ; - gravure pour élargir les ouvertures traversantes du premier masque de gravure ou les ouvertures traversantes d’une couche intercalaire gravée avec le revêtement structuré, de manière à former un deuxième masque de gravure  ; - injection d’éléments dopants accepteurs dans le substrat (110), à travers le deuxième masque de gravure (150), et activation et diffusion des éléments dopants accepteurs pour former au moins une région dopée P dans le substrat semiconducteur ; - recuit d’inter-diffusion sélective du cadmium, de manière à former dans chaque région dopée P un caisson concentré riche en cadmium avec un gradient latéral de concentration en cadmium ; et - réalisation d’au moins un plot de contact électrique (171), au niveau de chaque ouverture traversante (121) dans le revêtement structuré (122). Figure pour l’abrégé : 1 J
FR2008678A 2020-04-09 2020-08-25 PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe. Active FR3113781B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR2008678A FR3113781B1 (fr) 2020-08-25 2020-08-25 PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.
CN202180034195.XA CN115516646A (zh) 2020-04-09 2021-04-02 用于在CdHgTe衬底中制造低噪声光电检测装置的方法
IL297009A IL297009A (en) 2020-04-09 2021-04-02 A process for the production of a light detector device with low noise in a mercury-cadmium-telluride substrate
EP21723326.1A EP4133532B1 (fr) 2020-04-09 2021-04-02 Procédé de fabrication d'un dispositif de photodétection à faible bruit dans un substrat en cdhgte
US17/995,605 US20230155043A1 (en) 2020-04-09 2021-04-02 PROCESS FOR MANUFACTURING A LOW-NOISE PHOTODETECTOR DEVICE IN A CdHgTe SUBSTRATE
PCT/FR2021/050587 WO2021205102A1 (fr) 2020-04-09 2021-04-02 PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2008678 2020-08-25
FR2008678A FR3113781B1 (fr) 2020-08-25 2020-08-25 PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.

Publications (2)

Publication Number Publication Date
FR3113781A1 FR3113781A1 (fr) 2022-03-04
FR3113781B1 true FR3113781B1 (fr) 2022-12-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR2008678A Active FR3113781B1 (fr) 2020-04-09 2020-08-25 PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.

Country Status (1)

Country Link
FR (1) FR3113781B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3140475A1 (fr) * 2022-10-03 2024-04-05 Commissariat à l'Energie Atomique et aux Energies Alternatives Puce électronique comportant une métallisation de type UBM

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR3027452B1 (fr) * 2014-10-21 2016-12-09 Commissariat Energie Atomique Procede de fabrication d'une photodiode a faible bruit
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium

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FR3113781A1 (fr) 2022-03-04

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