JPWO2018042534A1 - 半導体結晶基板、赤外線検出装置、光半導体装置、半導体装置、熱電変換素子、半導体結晶基板の製造方法及び赤外線検出装置の製造方法 - Google Patents
半導体結晶基板、赤外線検出装置、光半導体装置、半導体装置、熱電変換素子、半導体結晶基板の製造方法及び赤外線検出装置の製造方法 Download PDFInfo
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Abstract
Description
最初に、GaSb膜について成膜条件と平坦性との関係について検討を行った。具体的には、図1に示すように、GaSb基板11の上に、成膜条件の異なるGaSb層12a、GaSb層12bを各々形成した半導体結晶基板を作製し、GaSb層12a、GaSb層12bの表面の平坦性を調べた。GaSb層12a、GaSb層12bの表面の平坦性は、AFM(Atomic Force Microscope)により調べた。尚、GaSb層12a、GaSb層12bは、固体ソースを用いたMBEにより形成されており、V/III比は約10である。
本実施の形態における半導体結晶基板は、以上の知見に基づき得られたものである。具体的には、本実施の形態における半導体結晶基板は、図5に示すように、結晶基板であるGaSb基板111の上に、n型の第1のGaSb層112とp型の第2のGaSb層113が順に形成されたものである。具体的には、第1のGaSb層112は、GaSb層12aと同じ条件、即ち、基板温度が440℃の条件でMBEにより形成した膜である。また、第2のGaSb層113は、GaSb層12bと同じ条件、即ち、基板温度が520℃の条件でMBEにより形成した膜である。尚、GaSb基板111は、GaSb基板11と同様の基板である。
次に、本実施の形態における半導体結晶基板の製造方法について図9に基づき説明する。最初に、図9(a)に示すように、GaSb基板111であるn型GaSb(001)基板を固体ソース分子線エピタキシー(SS−MBE:solid source molecular beam epitaxy)装置の真空チャンバー内に設置する。この後、ヒータ加熱によりGaSb基板111を加熱し、GaSb基板111の基板温度が400℃に達した時点で、SbビームをGaSb基板111の表面に照射する。このときのSbのビームフラックスは、例えば、5.0×10−7Torrである。この後、更にGaSb基板111を加熱すると、基板温度が500℃近辺において、GaSb基板111の表面に形成されているGaSbの酸化膜が脱離する。この後、Sbビームを照射した状態で、GaSb基板111の基板温度が530℃になるまで加熱し、その状態を20分間維持することにより、GaSb基板111の表面に形成されているGaSbの酸化膜を完全に脱離させる。
次に、第2の実施の形態について説明する。本実施の形態は、第1の実施の形態における半導体結晶基板を用いて作製した赤外線検出装置である。図10は、本実施の形態における赤外線検出装置の全体の構造を示し、図11は、赤外線検出装置の画素の1つを拡大した構造を示す。
次に、本実施の形態における赤外線検出装置の製造方法について図13〜図16に基づき説明する。本実施の形態における赤外線検出装置は、第1の実施の形態における半導体結晶基板を用いて作製することが可能である。尚、図13(a)〜図16(a)は、各々の工程における全体の様子を示し、図13(b)〜図16(b)は、各々の工程における1つの画素に相当する部分を拡大した図である。
次に、第3の実施の形態について説明する。本実施の形態は、第1の実施の形態における半導体結晶基板を用いて作製した光半導体装置であるGaSb系半導体レーザである。図17は、本実施の形態における半導体レーザの構造を示す。
次に、第4の実施の形態について説明する。本実施の形態は、第1の実施の形態における半導体結晶基板を用いて作製した光半導体装置であるGaSb系発光ダイオード(LED:light emitting diode)である。図18は、本実施の形態における発光ダイオードの構造を示す。
次に、第5の実施の形態について説明する。本実施の形態は、第1の実施の形態における半導体結晶基板を用いて作製した半導体装置である電界効果トランジスタ(FET:Field effect transistor)である。図19は、本実施の形態における電界効果トランジスタの構造を示す。
次に、第6の実施の形態について説明する。本実施の形態は、第1の実施の形態における半導体結晶基板を用いて作製した熱電変換素子である。本実施の形態における熱電変換素子について、図20及び図21に基づき説明する。
112 第1のGaSb層(第1のバッファ層)
113 第2のGaSb層(第2のバッファ層)
114 p型コンタクト層
115 赤外線吸収層
116 n型コンタクト層
120 画素分離溝
131 パッシベーション膜
141 電極
142 電極
143 配線支持部
144 配線層
145 バンプ
146 バンプ
150 赤外線検出素子
160 信号読み出し回路素子
161 回路基板
162 電極
163 バンプ
Claims (18)
- GaSbまたはInAsを含む材料により形成された結晶基板と、
前記結晶基板の上に、GaSbを含む材料により形成されたn型導電性の第1のバッファ層と、
前記第1のバッファ層の上に、GaSbを含む材料により形成されたp型導電性の第2のバッファ層と、
を有することを特徴とする半導体結晶基板。 - 前記第1のバッファ層及び前記第2のバッファ層は、不純物元素の濃度が1.0×1017cm−3以下であることを特徴とする請求項1に記載の半導体結晶基板。
- 前記第1のバッファ層及び前記第2のバッファ層は、キャリア濃度が1.0×1018cm−3以上、1.0×1020cm−3以下であることを特徴とする請求項1または2に記載の半導体結晶基板。
- 前記第1のバッファ層は、GaSb、または、GaSbにIn、Asのいずれか若しくは双方を含む材料により形成されており、
前記第2のバッファ層は、GaSb、または、GaSbにIn、Asのいずれか若しくは双方を含む材料により形成されていることを特徴とする請求項1から3のいずれかに記載の半導体結晶基板。 - GaSbまたはInAsを含む材料により形成された結晶基板と、
前記結晶基板の上にGaSbを含む材料により形成されたn型導電性の第1のバッファ層と、
前記第1のバッファ層の上にGaSbを含む材料により形成されたp型導電性の第2のバッファ層と、
前記第2のバッファ層の上に形成された第1の導電型の第1のコンタクト層と、
前記第1のコンタクト層の上に形成された超格子構造を有する赤外線吸収層と、
前記赤外線吸収層の上に形成された第2の導電型の第2のコンタクト層と、
を有することを特徴とする赤外線検出装置。 - 前記第1のバッファ層は、不純物元素の濃度が1.0×1017cm−3以下であり、キャリア濃度が1.0×1018cm−3以上、1.0×1020cm−3以下であって、
前記第2のバッファ層は、不純物元素の濃度が1.0×1017cm−3以下であり、キャリア濃度が1.0×1018cm−3以上、1.0×1020cm−3以下であることを特徴とする請求項5に記載の赤外線検出装置。 - 前記第1のバッファ層は、GaSb、または、GaSbにIn、Asのいずれか若しくは双方を含む材料により形成されており、
前記第2のバッファ層は、GaSb、または、GaSbにIn、Asのいずれか若しくは双方を含む材料により形成されていることを特徴とする請求項5または6に記載の赤外線検出装置。 - 前記第1のコンタクト層の導電型は、p型であって、GaSbを含む材料により形成されており、
前記赤外線吸収層は、GaSbとInAsとを交互に積層して形成した超格子構造により形成されており、
前記第2のコンタクト層の導電型は、n型であって、InAsを含む材料により形成されていることを特徴とする請求項5から7のいずれかに記載の赤外線検出装置。 - 前記第2のコンタクト層及び前記赤外線吸収層には、画素ごとに分離する画素分離溝が形成されていることを特徴とする請求項5から8のいずれかに記載の赤外線検出装置。
- GaSbまたはInAsを含む材料により形成された結晶基板と、
前記結晶基板の上にGaSbを含む材料により形成されたn型導電性の第1のバッファ層と、
前記第1のバッファ層の上にGaSbを含む材料により形成されたp型導電性の第2のバッファ層と、
前記第2のバッファ層の上に形成された第1の導電型の第1のクラッド層と、
前記第1のクラッド層の上に形成された多重量子井戸構造の発光層と、
前記発光層の上に形成された第2の導電型の第2のクラッド層と、
を有することを特徴とする光半導体装置。 - GaSbまたはInAsを含む材料により形成された結晶基板と、
前記結晶基板の上にGaSbを含む材料により形成されたn型導電性の第1のバッファ層と、
前記第1のバッファ層の上にGaSbを含む材料により形成されたp型導電性の第2のバッファ層と、
前記第2のバッファ層の上に形成されたチャネル層と、
前記チャネル層の上に形成された絶縁膜と、
前記絶縁膜の上に形成されたゲート電極と、
前記チャネル層の上に形成されたソース電極及びドレイン電極と、
を有することを特徴とする半導体装置。 - GaSbまたはInAsを含む材料により形成された結晶基板と、
前記結晶基板の上にGaSbを含む材料により形成されたn型導電性の第1のバッファ層と、
前記第1のバッファ層の上にGaSbを含む材料により形成されたp型導電性の第2のバッファ層と、
前記第2のバッファ層の上に形成された超格子層と、
前記第1のバッファ層、前記第2のバッファ層及び超格子層に、不純物イオンを注入することにより形成されたメサ構造のn型領域とメサ構造のp型領域と、
前記メサ構造のn型領域と前記メサ構造のp型領域とを接続する電極と、
を有することを特徴とする熱電変換素子。 - GaSbまたはInAsを含む材料により形成された結晶基板の上に、分子線エピタキシーによって、GaSbを含む材料により、第1のバッファ層を形成する工程と、
前記第1のバッファ層の上に、分子線エピタキシーによって、GaSbを含む材料により、第2のバッファ層を形成する工程と、
を有し、
前記第1のバッファ層を形成する際の基板温度は、380℃以上、440℃以下であって、
前記第2のバッファ層を形成する際の基板温度は、500℃以上、550℃以下であることを特徴とする半導体結晶基板の製造方法。 - 前記第2のバッファ層を形成する際の基板温度が、520℃以上、550℃以下であることを特徴とする請求項13に記載の半導体結晶基板の製造方法。
- 前記分子線エピタキシーは、固体原料を用いたものであることを特徴とする請求項13または14に記載の半導体結晶基板の製造方法。
- 前記第1のバッファ層は、GaSbに、In、Asのいずれかまたは双方を含む材料により形成されており、
前記第2のバッファ層は、GaSbに、In、Asのいずれかまたは双方を含む材料により形成されていることを特徴とする請求項13から15のいずれかに記載の半導体結晶基板の製造方法。 - 請求項13から16のいずれかに記載の半導体結晶基板の製造方法により形成された半導体結晶基板の前記第2のバッファ層の上に、第1の導電型の第1のコンタクト層を形成する工程と、
前記第1のコンタクト層の上に、超格子構造を有する赤外線吸収層を形成する工程と、
前記赤外線吸収層の上に、第2の導電型の第2のコンタクト層を形成する工程と、
を有することを特徴とする赤外線検出装置の製造方法。 - 前記第1のコンタクト層は、p型であって、GaSbを含む材料により形成されており、
前記赤外線吸収層は、GaSbとInAsとを交互に積層して形成した超格子構造により形成されており、
前記第2のコンタクト層は、n型であって、InAsを含む材料により形成されていることを特徴とする請求項17に記載の赤外線検出装置の製造方法。
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