JP6589662B2 - 半導体積層体および受光素子 - Google Patents
半導体積層体および受光素子 Download PDFInfo
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- JP6589662B2 JP6589662B2 JP2016013120A JP2016013120A JP6589662B2 JP 6589662 B2 JP6589662 B2 JP 6589662B2 JP 2016013120 A JP2016013120 A JP 2016013120A JP 2016013120 A JP2016013120 A JP 2016013120A JP 6589662 B2 JP6589662 B2 JP 6589662B2
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- Prior art keywords
- semiconductor layer
- semiconductor
- layer
- quantum well
- light receiving
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- 239000004065 semiconductor Substances 0.000 title claims description 422
- 239000012535 impurity Substances 0.000 claims description 75
- 150000001875 compounds Chemical class 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000969 carrier Substances 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 10
- 229910005542 GaSb Inorganic materials 0.000 claims description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- 229910005540 GaP Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 46
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000000927 vapour-phase epitaxy Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- -1 aluminum antimony Chemical compound 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- SXZDTYABFPAVOF-UHFFFAOYSA-N CCCC[Sb] Chemical group CCCC[Sb] SXZDTYABFPAVOF-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- 101100208382 Danio rerio tmsb gene Proteins 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- RBEXEKTWBGMBDZ-UHFFFAOYSA-N tri(propan-2-yl)stibane Chemical compound CC(C)[Sb](C(C)C)C(C)C RBEXEKTWBGMBDZ-UHFFFAOYSA-N 0.000 description 1
- KKOFCVMVBJXDFP-UHFFFAOYSA-N triethylstibane Chemical compound CC[Sb](CC)CC KKOFCVMVBJXDFP-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical compound C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Electromagnetism (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Description
最初に本願発明の実施態様を列記して説明する。本願の半導体積層体は、III−V族化合物半導体からなり、導電型が第1導電型である第1半導体層と、III−V族化合物半導体からなる量子井戸受光層と、III−V族化合物半導体からなる第2半導体層と、III−V族化合物半導体からなる第3半導体層と、III−V族化合物半導体からなり、導電型が第1導電型とは異なる第2導電型である第4半導体層と、を備える。第1半導体層、量子井戸受光層、第2半導体層、第3半導体層および第4半導体層は、この順に積層される。第2導電型のキャリアを生成する不純物の濃度は、第4半導体層よりも第3半導体層において低い。第2半導体層において多数キャリアを生成する不純物の濃度は、第2半導体層よりも第3半導体層において低い。
次に、本発明にかかる半導体積層体の実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
図1を参照して、実施の形態1における半導体積層体10は、基板11と、第1半導体層12と、量子井戸受光層としての量子井戸構造13と、第2半導体層14と、第3半導体層15と、第4半導体層16とを備えている。
次に、本発明にかかる受光素子の他の実施の形態である実施の形態2における受光素子およびセンサについて説明する。図9および図2を参照して、実施の形態2の赤外線受光素子1は、図2に示す構造を単位構造とし、当該単位構造が、基板11の一方の主面11Aが延在する方向に複数繰り返される構造を有している。そして、赤外線受光素子1は、画素に対応する複数のp側電極92を有する。一方、n側電極91は1つだけ配置される。
10 半導体積層体
11 基板
11A 主面
12 第1半導体層
12A 第1主面
13 量子井戸構造
131 第1要素層
132 第2要素層
13A 主面
14 第2半導体層
14A 主面
14B 主面
15 第3半導体層
15A 主面
15B 主面
16 第4半導体層
16B 主面
70 読み出し回路
71 本体
72,73 バンプ
75 配線
80 パッシベーション膜
81,82 開口部
91 n側電極
92 p側電極
99 トレンチ
99A 側壁
99B 底壁
100 赤外線センサ
Claims (11)
- III−V族化合物半導体からなり、導電型が第1導電型である第1半導体層と、
III−V族化合物半導体からなる量子井戸受光層と、
III−V族化合物半導体からなる第2半導体層と、
III−V族化合物半導体からなる第3半導体層と、
III−V族化合物半導体からなり、導電型が前記第1導電型とは異なる第2導電型である第4半導体層と、を備え、
前記第1半導体層、前記量子井戸受光層、前記第2半導体層、前記第3半導体層および前記第4半導体層は、この順に積層され、
前記第2導電型のキャリアを生成する不純物の濃度は、前記第4半導体層よりも前記第3半導体層において低く、
前記第2半導体層において多数キャリアを生成する不純物の濃度は、前記第2半導体層よりも前記第3半導体層において低く、
前記第2半導体層における多数キャリアを生成する不純物の濃度は5×10 14 cm −3 以上5×10 18 cm −3 以下であり、
前記第2半導体層の厚みは500nm以下である、半導体積層体。 - 前記第3半導体層における前記第1導電型のキャリアを生成する不純物の濃度および前記第2導電型のキャリアを生成する不純物の濃度は、いずれも5×1014cm−3未満である、請求項1に記載の半導体積層体。
- 前記第2半導体層において多数キャリアを生成する不純物の濃度は、前記第4半導体層における前記第2導電型のキャリアを生成する不純物の濃度よりも低い、請求項1または2に記載の半導体積層体。
- 前記第2半導体層の厚みは、前記第3半導体層の厚みよりも小さい、請求項1から請求項3のいずれか1項に記載の半導体積層体。
- 前記第2半導体層において多数キャリアを生成する不純物は、Si、S、Se、Ge、TeおよびSnからなる群から選択される一種以上、またはZn、Be、MgおよびCからなる群から選択される一種以上である、請求項1から請求項4のいずれか1項に記載の半導体積層体。
- 前記量子井戸受光層は、InxGa1−xAs(xは0.38以上1以下)層とGaAs1−ySby(yは0.36以上1以下)層とのペア、またはGa1−uInuNvAs1−v(uは0.4以上0.8以下、vは0を超え0.2以下)層とGaAs1−ySby(yは0.36以上0.62以下)層とのペアを含む多重量子井戸構造である、請求項1から請求項5のいずれか1項に記載の半導体積層体。
- 前記第1半導体層から見て前記量子井戸受光層とは反対側に位置する基板をさらに含み、
前記基板は、GaAs、GaP、GaSb、InP、InAs、InSb、AlSb、またはAlAsからなる、請求項6に記載の半導体積層体。 - 前記第2半導体層は、前記量子井戸受光層を構成する半導体層と同一のIII−V族化合物半導体からなる、請求項1から請求項7のいずれか1項に記載の半導体積層体。
- 前記量子井戸受光層の厚みは1μm以上である、請求項1から請求項8のいずれか1項に記載の半導体積層体。
- 前記第1半導体層と前記量子井戸受光層との界面、前記量子井戸受光層と前記第2半導体層との界面、前記第2半導体層と前記第3半導体層との界面、および前記第3半導体層と前記第4半導体層との界面における、酸素の濃度、炭素の濃度および水素の濃度は、いずれも1×1017cm−3以下である、請求項1から請求項9のいずれか1項に記載の半導体積層体。
- 請求項1から請求項10のいずれか1項に記載の半導体積層体と、
前記半導体積層体上に形成された電極と、を備える、受光素子。
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