JP5117428B2 - 二重ドープ層燐光有機発光デバイス - Google Patents
二重ドープ層燐光有機発光デバイス Download PDFInfo
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- JP5117428B2 JP5117428B2 JP2009042820A JP2009042820A JP5117428B2 JP 5117428 B2 JP5117428 B2 JP 5117428B2 JP 2009042820 A JP2009042820 A JP 2009042820A JP 2009042820 A JP2009042820 A JP 2009042820A JP 5117428 B2 JP5117428 B2 JP 5117428B2
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- 239000000463 material Substances 0.000 claims description 80
- 230000005525 hole transport Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 19
- 230000005281 excited state Effects 0.000 claims description 12
- 238000001429 visible spectrum Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 68
- 230000032258 transport Effects 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 8
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 7
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 6
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 6
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- -1 methylphenylphenylamino Chemical group 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CJMMUNAXGYEASQ-UHFFFAOYSA-N 2-methyl-6-(3-methylphenyl)aniline Chemical group NC1=C(C=CC=C1C)C1=CC(=CC=C1)C CJMMUNAXGYEASQ-UHFFFAOYSA-N 0.000 description 2
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical group [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
本発明は、二重ドープ層構造を有する燐光OLEDに関する。本発明のOLEDは、アノード、そのアノードの上の第一ホール輸送(hole transporting)層(HTL)、前記第一HTL上の、燐光材料をドープした第二HTL、前記第二HTL上の、燐光材料をドープした第一電子輸送(electron transporting)層(ETL)、前記第一ETLの上の第二ETL、及び前記第二ETLの上のカソードを有するのが典型的である。本発明の各態様で、OLEDは、燐光材料が中にドープされたHTL及び同じ燐光材料が中にドープされたETLを有する。
本発明は、以下の記述で例示的態様に関連して記述する。これらの態様は単に説明のための例として考えられており、本発明をそれらに限定するものではない。
ITO(インジウム錫酸化物)被覆ガラス基材上に第一HTLを先ず堆積した。第一HTLは、約400ÅのR854からなっている。第二HTLは約200ÅのR854からなっており、第一HTL上に堆積されている。第二HTLはIr(4,6−F2ppy)(pico)で約6%ドープされている。第一ETLは、約200ÅのTAZからなり、第二HTL上に堆積されている。第一ETLは、Ir(4,6−F2ppy)(pico)で約6%ドープされている。約400Åの厚さを有するAlq3の第二ETLを、第一ETL上に堆積する。第二ETL上にMg/Ag電極を堆積することにより、デバイスを完成した。このMg/Ag電極は約100nmの厚さを持っていた。堆積は全て5×10-5トールよりも低い真空度で行なった。デバイスはパッケージすることなく、空気中で試験した。
Claims (4)
- 基材、
前記基材の上のアノード、
前記アノードの上の第一ホール輸送層、
前記第一ホール輸送層の上の第二ホール輸送層で、有機分子の三重項励起状態から発光をする燐光材料をドープした第二ホール輸送層、
前記第二ホール輸送層の上の第一電子輸送層で、有機分子の三重項励起状態から発光をする前記燐光材料をドープした第一電子輸送層、
前記第一電子輸送の上の第二電子輸送層、及び
前記第二電子輸送層の上のカソード、
を有する有機発光デバイス。 - 有機発光デバイスが、可視スペクトルの青色範囲内の光を発する、請求項1に記載の有機発光デバイス。
- 第一ホール輸送層が、アノードのIPエネルギーよりも0.7eV以下大きいIPエネルギーを有する、請求項1または2に記載の有機発光デバイス。
- 第一ホール輸送層が、アノードのIPエネルギーよりも0.5eV以下大きいIPエネルギーを有する、請求項3に記載の有機発光デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27328401P | 2001-03-02 | 2001-03-02 | |
US60/273,284 | 2001-03-02 |
Related Parent Applications (1)
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JP2002570589A Division JP4994564B2 (ja) | 2001-03-02 | 2002-02-01 | 二重ドープ層燐光有機発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009147364A JP2009147364A (ja) | 2009-07-02 |
JP5117428B2 true JP5117428B2 (ja) | 2013-01-16 |
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JP2002570589A Expired - Lifetime JP4994564B2 (ja) | 2001-03-02 | 2002-02-01 | 二重ドープ層燐光有機発光装置 |
JP2009042820A Expired - Lifetime JP5117428B2 (ja) | 2001-03-02 | 2009-02-25 | 二重ドープ層燐光有機発光デバイス |
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JP2002570589A Expired - Lifetime JP4994564B2 (ja) | 2001-03-02 | 2002-02-01 | 二重ドープ層燐光有機発光装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6867538B2 (ja) |
EP (1) | EP1374641B1 (ja) |
JP (2) | JP4994564B2 (ja) |
KR (1) | KR100898304B1 (ja) |
WO (1) | WO2002071813A1 (ja) |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6939624B2 (en) * | 2000-08-11 | 2005-09-06 | Universal Display Corporation | Organometallic compounds and emission-shifting organic electrophosphorescence |
DE10224021B4 (de) * | 2002-05-24 | 2006-06-01 | Novaled Gmbh | Phosphoreszentes lichtemittierendes Bauelement mit organischen Schichten |
CN1703937B (zh) | 2002-10-09 | 2010-11-24 | 出光兴产株式会社 | 有机电致发光的器件 |
CN100468813C (zh) * | 2002-12-13 | 2009-03-11 | 皇家飞利浦电子股份有限公司 | 具有三重态发射体复合物的有机电致发光组件 |
AU2003289000A1 (en) * | 2002-12-19 | 2004-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Organometal complex, electroluminescent element containing the organometal complex and luminescent device including the electroluminescent element |
US6822257B2 (en) * | 2003-01-29 | 2004-11-23 | Ritdisplay Corporation | Organic light emitting diode device with organic hole transporting material and phosphorescent material |
JP4531342B2 (ja) * | 2003-03-17 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 白色有機発光素子および発光装置 |
JP4747481B2 (ja) * | 2003-03-24 | 2011-08-17 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子および表示装置 |
JP4526776B2 (ja) * | 2003-04-02 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
JP4650265B2 (ja) * | 2003-07-23 | 2011-03-16 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
JP2005093425A (ja) * | 2003-08-12 | 2005-04-07 | Toray Ind Inc | 発光素子 |
TW200513138A (en) * | 2003-09-23 | 2005-04-01 | Guan-Chang Peng | Organic light Emitting Device (OLED) |
US7084425B2 (en) * | 2003-12-05 | 2006-08-01 | Eastman Kodak Company | Organic electroluminescent devices |
DE10361385B4 (de) | 2003-12-29 | 2011-07-28 | OSRAM Opto Semiconductors GmbH, 93055 | Polymere, phosphoreszierende, organisch halbleitende Emittermaterialien auf Basis perarylierter Borane, Verfahren zu deren Herstellung und Verwendungen davon |
US7030554B2 (en) * | 2004-02-06 | 2006-04-18 | Eastman Kodak Company | Full-color organic display having improved blue emission |
US9085729B2 (en) * | 2004-02-09 | 2015-07-21 | Lg Display Co., Ltd. | Blue emitters for use in organic electroluminescence devices |
US7045952B2 (en) | 2004-03-04 | 2006-05-16 | Universal Display Corporation | OLEDs with mixed host emissive layer |
JP5040077B2 (ja) * | 2004-07-23 | 2012-10-03 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子 |
US7316756B2 (en) | 2004-07-27 | 2008-01-08 | Eastman Kodak Company | Desiccant for top-emitting OLED |
KR100669718B1 (ko) * | 2004-07-29 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
US7540978B2 (en) | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
US20080303415A1 (en) * | 2004-08-05 | 2008-12-11 | Yoshiyuki Suzuri | Organic Electroluminescence Element, Display and Illuminator |
US7300731B2 (en) * | 2004-08-10 | 2007-11-27 | E.I. Du Pont De Nemours And Company | Spatially-doped charge transport layers |
KR101027896B1 (ko) * | 2004-08-13 | 2011-04-07 | 테크니셰 유니베르시테트 드레스덴 | 발광 컴포넌트를 위한 층 어셈블리 |
JP4697577B2 (ja) * | 2004-08-24 | 2011-06-08 | 富士電機ホールディングス株式会社 | 有機el素子 |
US20060042685A1 (en) * | 2004-08-25 | 2006-03-02 | Ying Wang | Electronic devices having a charge transport layer that has defined triplet energy level |
US8049407B2 (en) | 2004-09-15 | 2011-11-01 | Fujifilm Corporation | Organic electroluminescent element including blue phosphorescent luminescent material |
JP2006279014A (ja) * | 2004-09-15 | 2006-10-12 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
US9040170B2 (en) | 2004-09-20 | 2015-05-26 | Global Oled Technology Llc | Electroluminescent device with quinazoline complex emitter |
US7767316B2 (en) * | 2004-09-20 | 2010-08-03 | Global Oled Technology Llc | Organic electroluminescent devices and composition |
EP1648042B1 (en) | 2004-10-07 | 2007-05-02 | Novaled AG | A method for doping a semiconductor material with cesium |
KR100637177B1 (ko) * | 2004-10-11 | 2006-10-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
US8076842B2 (en) * | 2005-03-01 | 2011-12-13 | The Regents Of The University Of California | Multilayer polymer light-emitting diodes for solid state lighting applications |
DE502005002342D1 (de) * | 2005-03-15 | 2008-02-07 | Novaled Ag | Lichtemittierendes Bauelement |
US20060216546A1 (en) * | 2005-03-28 | 2006-09-28 | Fuji Photo Film Co., Ltd. | Organic electroluminescent element |
EP2284923B1 (de) * | 2005-04-13 | 2016-12-28 | Novaled GmbH | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
US9070884B2 (en) * | 2005-04-13 | 2015-06-30 | Universal Display Corporation | Hybrid OLED having phosphorescent and fluorescent emitters |
CN101171239B (zh) * | 2005-04-28 | 2013-08-14 | 西巴特殊化学品控股有限公司 | 场致发光器件 |
EP1727221B1 (de) * | 2005-05-27 | 2010-04-14 | Novaled AG | Transparente organische Leuchtdiode |
EP1729346A1 (de) * | 2005-06-01 | 2006-12-06 | Novaled AG | Lichtemittierendes Bauteil mit einer Elektrodenanordnung |
US7474048B2 (en) * | 2005-06-01 | 2009-01-06 | The Trustees Of Princeton University | Fluorescent filtered electrophosphorescence |
JP5554922B2 (ja) * | 2005-06-10 | 2014-07-23 | トムソン ライセンシング | 異なる有機材料の2つ以下の層を備える有機発光ダイオード |
EP1739765A1 (de) * | 2005-07-01 | 2007-01-03 | Novaled AG | Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden |
US8956738B2 (en) | 2005-10-26 | 2015-02-17 | Global Oled Technology Llc | Organic element for low voltage electroluminescent devices |
US9666826B2 (en) | 2005-11-30 | 2017-05-30 | Global Oled Technology Llc | Electroluminescent device including an anthracene derivative |
EP1806795B1 (de) * | 2005-12-21 | 2008-07-09 | Novaled AG | Organisches Bauelement |
EP1804308B1 (en) * | 2005-12-23 | 2012-04-04 | Novaled AG | An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other |
DE602006001930D1 (de) * | 2005-12-23 | 2008-09-04 | Novaled Ag | tur von organischen Schichten |
EP1808909A1 (de) | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
US9112170B2 (en) * | 2006-03-21 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
JP4943199B2 (ja) * | 2006-03-21 | 2012-05-30 | 株式会社半導体エネルギー研究所 | オキサジアゾール誘導体 |
EP1848049B1 (de) * | 2006-04-19 | 2009-12-09 | Novaled AG | Lichtemittierendes Bauelement |
EP2016633A1 (en) | 2006-05-08 | 2009-01-21 | Eastman Kodak Company | Oled electron-injecting layer |
KR101384785B1 (ko) | 2006-06-01 | 2014-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자, 발광장치 및 전자기기 |
US7579773B2 (en) * | 2006-06-05 | 2009-08-25 | The Trustees Of Princeton University | Organic light-emitting device with a phosphor-sensitized fluorescent emission layer |
JPWO2008023628A1 (ja) * | 2006-08-21 | 2010-01-07 | 保土谷化学工業株式会社 | ピリジル基で置換されたトリアジン環構造を有する化合物および有機エレクトロルミネッセンス素子 |
JP5011908B2 (ja) * | 2006-09-26 | 2012-08-29 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、表示装置および照明装置 |
JP4274219B2 (ja) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US9397308B2 (en) * | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
DE102006059509B4 (de) * | 2006-12-14 | 2012-05-03 | Novaled Ag | Organisches Leuchtbauelement |
DE102007019260B4 (de) * | 2007-04-17 | 2020-01-16 | Novaled Gmbh | Nichtflüchtiges organisches Speicherelement |
US20080286487A1 (en) * | 2007-05-18 | 2008-11-20 | Lang Charles D | Process for making contained layers |
JP5337811B2 (ja) * | 2007-10-26 | 2013-11-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 閉じ込め層を製造するための方法および材料、ならびにそれを使用して製造したデバイス |
JP2010034484A (ja) * | 2008-07-01 | 2010-02-12 | Nippon Hoso Kyokai <Nhk> | 有機エレクトロルミネッセンス素子 |
DE102008036062B4 (de) | 2008-08-04 | 2015-11-12 | Novaled Ag | Organischer Feldeffekt-Transistor |
DE102008036063B4 (de) * | 2008-08-04 | 2017-08-31 | Novaled Gmbh | Organischer Feldeffekt-Transistor |
EP2161272A1 (en) | 2008-09-05 | 2010-03-10 | Basf Se | Phenanthrolines |
US20100295027A1 (en) * | 2009-05-22 | 2010-11-25 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device |
JP2011009205A (ja) | 2009-05-29 | 2011-01-13 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置及びその作製方法 |
CN105742515A (zh) | 2009-05-29 | 2016-07-06 | 株式会社半导体能源研究所 | 发光元件、发光装置、照明装置以及电子设备 |
CN102482574B (zh) | 2009-06-18 | 2014-09-24 | 巴斯夫欧洲公司 | 用作场致发光器件的空穴传输材料的菲并唑化合物 |
JP5727478B2 (ja) * | 2009-07-27 | 2015-06-03 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | 閉じ込め層を製作するための方法および物質ならびにそれによって製作されるデバイス |
JP2011139044A (ja) | 2009-12-01 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
EP2365556B1 (en) * | 2010-03-08 | 2014-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
CN102201541B (zh) | 2010-03-23 | 2015-11-25 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备及照明装置 |
JP5801579B2 (ja) | 2010-03-31 | 2015-10-28 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、及び照明装置 |
TWI506121B (zh) | 2010-03-31 | 2015-11-01 | Semiconductor Energy Lab | 發光元件,發光裝置,電子裝置以及照明裝置 |
KR101135541B1 (ko) | 2010-04-01 | 2012-04-13 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 |
JP2011249436A (ja) * | 2010-05-25 | 2011-12-08 | Nippon Seiki Co Ltd | 有機el素子 |
KR102098563B1 (ko) | 2010-06-25 | 2020-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 디스플레이 및 전자 기기 |
CA2811165A1 (en) | 2010-09-29 | 2012-04-05 | Basf Se | Security element |
EP2625171B1 (en) | 2010-10-07 | 2014-07-30 | Basf Se | Phenanthro[9,10-b]furans for electronic applications |
US9079872B2 (en) | 2010-10-07 | 2015-07-14 | Basf Se | Phenanthro[9, 10-B]furans for electronic applications |
GB2485001A (en) * | 2010-10-19 | 2012-05-02 | Cambridge Display Tech Ltd | OLEDs |
CN102738398A (zh) * | 2011-03-31 | 2012-10-17 | 海洋王照明科技股份有限公司 | 一种白光电致发光器件 |
CN104170111B (zh) * | 2012-03-14 | 2016-10-26 | 株式会社半导体能源研究所 | 发光元件、发光装置、显示装置、电子设备以及照明装置 |
TWI733065B (zh) | 2012-08-03 | 2021-07-11 | 日商半導體能源研究所股份有限公司 | 發光元件、發光裝置、顯示裝置、電子裝置及照明設備 |
KR102151394B1 (ko) * | 2013-01-10 | 2020-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기 및 조명 장치 |
CN103296215A (zh) * | 2013-05-21 | 2013-09-11 | 京东方科技集团股份有限公司 | 一种有机电致发光器件及显示装置 |
US9130182B2 (en) * | 2013-06-28 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, lighting device, light-emitting device, and electronic device |
JP5867580B2 (ja) | 2014-06-04 | 2016-02-24 | 住友化学株式会社 | 発光素子 |
JP2017054939A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 有機光電変換素子、及び固体撮像素子 |
WO2017061332A1 (ja) | 2015-10-06 | 2017-04-13 | 住友化学株式会社 | 発光素子 |
JP6962376B2 (ja) | 2017-08-29 | 2021-11-05 | Tdk株式会社 | 透明導電体及び有機デバイス |
KR102371410B1 (ko) * | 2017-10-26 | 2022-03-04 | 엘지디스플레이 주식회사 | 발광다이오드 및 이를 포함하는 발광장치 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5093698A (en) * | 1991-02-12 | 1992-03-03 | Kabushiki Kaisha Toshiba | Organic electroluminescent device |
US5409783A (en) * | 1994-02-24 | 1995-04-25 | Eastman Kodak Company | Red-emitting organic electroluminescent device |
DE69514495T2 (de) * | 1994-08-11 | 2000-08-10 | Koninklijke Philips Electronics N.V., Eindhoven | Festkörper-bildverstärker und röntgenuntersuchungsgerät mit einem festkörper-bildverstärker |
JPH08124679A (ja) * | 1994-10-25 | 1996-05-17 | Ibm Japan Ltd | エレクトロ・ルミネッセンス装置 |
US5707745A (en) | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
JP3427539B2 (ja) * | 1995-02-13 | 2003-07-22 | 松下電器産業株式会社 | 有機薄膜エレクトロルミネッセンス素子 |
JP3949214B2 (ja) * | 1997-03-18 | 2007-07-25 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
US6469437B1 (en) * | 1997-11-03 | 2002-10-22 | The Trustees Of Princeton University | Highly transparent organic light emitting device employing a non-metallic cathode |
US6303238B1 (en) * | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
US6420031B1 (en) * | 1997-11-03 | 2002-07-16 | The Trustees Of Princeton University | Highly transparent non-metallic cathodes |
US6013538A (en) | 1997-11-24 | 2000-01-11 | The Trustees Of Princeton University | Method of fabricating and patterning OLEDs |
US6287712B1 (en) * | 1998-04-10 | 2001-09-11 | The Trustees Of Princeton University | Color-tunable organic light emitting devices |
US6097147A (en) * | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
GB9820805D0 (en) * | 1998-09-25 | 1998-11-18 | Isis Innovation | Divalent lanthanide metal complexes |
JP3287344B2 (ja) * | 1998-10-09 | 2002-06-04 | 株式会社デンソー | 有機el素子 |
JP2000196140A (ja) * | 1998-12-28 | 2000-07-14 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造法 |
JP2000252072A (ja) * | 1999-03-03 | 2000-09-14 | Honda Motor Co Ltd | 有機エレクトロルミネッセンス素子とその製造方法 |
JP4619546B2 (ja) * | 1999-03-23 | 2011-01-26 | ザ ユニバーシティー オブ サザン カリフォルニア | 有機ledの燐光性ドーパントとしてのシクロメタル化金属錯体 |
JP2002543556A (ja) * | 1999-04-23 | 2002-12-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ルミネッセンス素子 |
AU5004700A (en) * | 1999-05-13 | 2000-12-05 | Trustees Of Princeton University, The | Very high efficiency organic light emitting devices based on electrophosphorescence |
JP2000340364A (ja) * | 1999-05-25 | 2000-12-08 | Tdk Corp | 有機el素子 |
US6310360B1 (en) * | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
US6645645B1 (en) * | 2000-05-30 | 2003-11-11 | The Trustees Of Princeton University | Phosphorescent organic light emitting devices |
US6696177B1 (en) * | 2000-08-30 | 2004-02-24 | Eastman Kodak Company | White organic electroluminescent devices with improved stability and efficiency |
US6614175B2 (en) * | 2001-01-26 | 2003-09-02 | Xerox Corporation | Organic light emitting devices |
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US6867538B2 (en) | 2005-03-15 |
JP4994564B2 (ja) | 2012-08-08 |
US20020180347A1 (en) | 2002-12-05 |
EP1374641A1 (en) | 2004-01-02 |
JP2004522264A (ja) | 2004-07-22 |
JP2009147364A (ja) | 2009-07-02 |
KR20030080056A (ko) | 2003-10-10 |
KR100898304B1 (ko) | 2009-05-19 |
EP1374641B1 (en) | 2017-12-27 |
EP1374641A4 (en) | 2007-04-18 |
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