JP5060835B2 - 基板の処理装置 - Google Patents
基板の処理装置 Download PDFInfo
- Publication number
- JP5060835B2 JP5060835B2 JP2007147131A JP2007147131A JP5060835B2 JP 5060835 B2 JP5060835 B2 JP 5060835B2 JP 2007147131 A JP2007147131 A JP 2007147131A JP 2007147131 A JP2007147131 A JP 2007147131A JP 5060835 B2 JP5060835 B2 JP 5060835B2
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- liquid storage
- liquid
- processing
- substrate
- processing liquid
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- 238000012545 processing Methods 0.000 title claims description 154
- 239000000758 substrate Substances 0.000 title claims description 70
- 239000007788 liquid Substances 0.000 claims description 287
- 238000003860 storage Methods 0.000 claims description 111
- 238000007599 discharging Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Coating Apparatus (AREA)
Description
上記処理液供給手段は、
上記処理液を供給する給液管が接続された主貯液部と、
この主貯液部の下端に設けられ主貯液部に上記給液管から供給されて貯えられた処理液を流出させる第1の流出部と、
この第1の流出部から流出した処理液を貯留する補助貯液部と、
この補助貯液部に設けられ上記第1の流出部から上記補助貯液部に流出した処理液を上記基板の上面に供給する第2の流出部と、
上記補助貯液部に大気に連通して設けられ上記第1の流出部から処理液とともに流出した気泡を大気に放出させる第1の放出部と
を具備したことを特徴とする基板の処理装置にある。
なお、第1のエア抜き管45は、図1に示すように補助貯液部38の長手方向の両端部に設けられている。
なお、図5と図6に示す、第2、第3の実施の形態において、第1の実施の形態と同一部分には同一記号を付して説明を省略する。
Claims (7)
- 搬送される基板の上面を処理液供給手段から供給される処理液によって処理する処理装置であって、
上記処理液供給手段は、
上記処理液を供給する給液管が接続された主貯液部と、
この主貯液部の下端に設けられ上記給液管から上記主貯液部に供給されて貯えられた処理液を流出させる第1の流出部と、
この第1の流出部から流出した処理液を受ける傾斜面、この傾斜面の下端に設けられ上記第1の流出部から流出した処理液を上記基板の上面に供給する第2の流出部を有し、上記第1の流出部から流出した処理液を貯留する補助貯液部と、
この補助貯液部に大気に連通して設けられ上記第1の流出部から処理液とともに流出した気泡を大気に放出させる第1の放出部と
を具備し、
上記第1の流出部は、上記主貯液部の長手方向に沿って形成された複数の流出孔であり、上記傾斜面も上記長手方向に沿って形成されたことを特徴とする基板の処理装置。 - 上記第1の流出部は上記主貯液部の底部壁に形成されていることを特徴とする請求項1記載の基板の処理装置。
- 上記第1の流出部は上記主貯液部の側部壁に形成されていることを特徴とする請求項1記載の基板の処理装置。
- 上記主貯液部には、上記給液管から上記主貯液部に処理液とともに供給される気泡を大気に放出させる第2の放出部が形成されていることを特徴とする請求項1記載の基板の処理装置。
- 上記主貯液部の第1の流出部から上記補助貯液部に流出した処理液は、この補助貯液部で一時的に貯えられてから、補助貯液部の第2の流出部から流出する構成であることを特徴とする請求項1記載の基板の処理装置。
- 上記主貯液部には、上記給液管から供給される処理液を受ける受け部材が設けられていることを特徴とする請求項1記載の基板の処理装置。
- 上記第2の流出部は、上記基板の搬送方向と交差する方向に沿って形成されたスリットであることを特徴とする請求項1記載の基板の処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007147131A JP5060835B2 (ja) | 2006-07-26 | 2007-06-01 | 基板の処理装置 |
TW096124718A TWI400131B (zh) | 2006-07-26 | 2007-07-06 | 基板處理裝置 |
KR1020070074595A KR101305263B1 (ko) | 2006-07-26 | 2007-07-25 | 기판 처리 장치 |
CN2007101369831A CN101114575B (zh) | 2006-07-26 | 2007-07-26 | 基板的处理装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006203753 | 2006-07-26 | ||
JP2006203753 | 2006-07-26 | ||
JP2007147131A JP5060835B2 (ja) | 2006-07-26 | 2007-06-01 | 基板の処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008053689A JP2008053689A (ja) | 2008-03-06 |
JP5060835B2 true JP5060835B2 (ja) | 2012-10-31 |
Family
ID=39222438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007147131A Active JP5060835B2 (ja) | 2006-07-26 | 2007-06-01 | 基板の処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5060835B2 (ja) |
KR (1) | KR101305263B1 (ja) |
CN (1) | CN101114575B (ja) |
TW (1) | TWI400131B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101374298B1 (ko) * | 2010-07-29 | 2014-03-14 | 세메스 주식회사 | 기판 처리 장치 |
CN102500509A (zh) * | 2011-10-28 | 2012-06-20 | 山东万事达建筑钢品科技有限公司 | 建筑复合板滴胶装置 |
JP6290117B2 (ja) * | 2014-03-07 | 2018-03-07 | 芝浦メカトロニクス株式会社 | 接液処理装置および接液処理方法 |
CN105785605B (zh) * | 2015-01-13 | 2019-05-03 | 芝浦机械电子株式会社 | 基板处理装置 |
KR102456820B1 (ko) * | 2016-12-26 | 2022-10-19 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법, 기판 처리 장치, 기판 처리 시스템, 기판 처리 시스템의 제어 장치, 반도체 기판의 제조 방법 및 반도체 기판 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5790706U (ja) * | 1980-11-21 | 1982-06-04 | ||
JPH08323106A (ja) * | 1995-06-02 | 1996-12-10 | Hitachi Ltd | 薬液供給装置及び薬液供給方法 |
JPH0964009A (ja) * | 1995-08-23 | 1997-03-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置における気液分離回収装置 |
JP3494521B2 (ja) * | 1996-02-01 | 2004-02-09 | 大日本スクリーン製造株式会社 | 薬液供給装置の気液分離装置 |
JPH10314503A (ja) * | 1997-05-15 | 1998-12-02 | Sony Corp | 流体の脱気装置 |
JP3982882B2 (ja) * | 1997-09-25 | 2007-09-26 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JPH11156279A (ja) * | 1997-11-27 | 1999-06-15 | Dainippon Screen Mfg Co Ltd | 基板処理装置の処理液吐出ノズル |
JPH11297198A (ja) * | 1998-04-13 | 1999-10-29 | Toppan Printing Co Ltd | シャドーマスクの検査方法及び検査装置 |
JP4349536B2 (ja) * | 1999-06-08 | 2009-10-21 | 大日本印刷株式会社 | 塗布液供給装置 |
JP2001007004A (ja) * | 1999-06-23 | 2001-01-12 | Sony Corp | 薬液供給装置および薬液供給方法 |
JP2002292315A (ja) * | 2001-03-29 | 2002-10-08 | Kyocera Corp | 噴霧装置およびそれを用いた現像方法 |
JP2003181364A (ja) * | 2001-12-21 | 2003-07-02 | Tokyo Electron Ltd | 塗布処理装置 |
JP4298384B2 (ja) * | 2003-06-04 | 2009-07-15 | 大日本スクリーン製造株式会社 | 液供給装置および基板処理装置 |
JP4315787B2 (ja) * | 2003-11-18 | 2009-08-19 | 大日本スクリーン製造株式会社 | 基板処理装置、並びに被充填体における液体充填度および気体混入度判定構造 |
JP2005340322A (ja) * | 2004-05-25 | 2005-12-08 | Hitachi High-Tech Electronics Engineering Co Ltd | 基板処理装置及び基板の製造方法 |
JP4464763B2 (ja) * | 2004-08-20 | 2010-05-19 | 東京エレクトロン株式会社 | 現像装置及び現像方法 |
KR100643494B1 (ko) * | 2004-10-13 | 2006-11-10 | 삼성전자주식회사 | 반도체 제조용 포토레지스트의 디스펜싱장치 |
JP4627681B2 (ja) * | 2005-04-20 | 2011-02-09 | 芝浦メカトロニクス株式会社 | 基板の処理装置及び処理方法 |
-
2007
- 2007-06-01 JP JP2007147131A patent/JP5060835B2/ja active Active
- 2007-07-06 TW TW096124718A patent/TWI400131B/zh active
- 2007-07-25 KR KR1020070074595A patent/KR101305263B1/ko active IP Right Grant
- 2007-07-26 CN CN2007101369831A patent/CN101114575B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20080010337A (ko) | 2008-01-30 |
TWI400131B (zh) | 2013-07-01 |
JP2008053689A (ja) | 2008-03-06 |
TW200810838A (en) | 2008-03-01 |
CN101114575B (zh) | 2010-07-21 |
KR101305263B1 (ko) | 2013-09-09 |
CN101114575A (zh) | 2008-01-30 |
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